lampoly etch profiles courtesy of rishi kant (coral name: rik) performed: 11/18/08 wafer: silicon...
Post on 20-Dec-2015
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![Page 1: Lampoly etch profiles Courtesy of Rishi Kant (Coral name: rik) Performed: 11/18/08 Wafer: Silicon substrate patterned with a thermal oxide hard mask (6000](https://reader035.vdocuments.net/reader035/viewer/2022062714/56649d4e5503460f94a2d65f/html5/thumbnails/1.jpg)
Lampoly etch profiles
Courtesy of Rishi Kant (Coral name: rik)
Performed: 11/18/08
Wafer: Silicon substrate patterned with a thermal oxide hard mask (6000 angstroms thick).
Etch: Standard Recipe 1, with 300 seconds in the Main Etch.
Thermal Oxide Etch Rate: 240 A/min, excellent uniformity (50 A total thickness variation across the wafer)
Single Crystal Silicon Etch Rate: 2900 – 3400 A/min, depending on feature size (loading effect.)
Observations: Isolated structures show very good sidewall profiles. Etching holes yields sloped and W-shaped profiles depending on the size of the holes (this is historically normal.)
![Page 2: Lampoly etch profiles Courtesy of Rishi Kant (Coral name: rik) Performed: 11/18/08 Wafer: Silicon substrate patterned with a thermal oxide hard mask (6000](https://reader035.vdocuments.net/reader035/viewer/2022062714/56649d4e5503460f94a2d65f/html5/thumbnails/2.jpg)
Isolated structures
![Page 3: Lampoly etch profiles Courtesy of Rishi Kant (Coral name: rik) Performed: 11/18/08 Wafer: Silicon substrate patterned with a thermal oxide hard mask (6000](https://reader035.vdocuments.net/reader035/viewer/2022062714/56649d4e5503460f94a2d65f/html5/thumbnails/3.jpg)