ldmos power amplifiers for 23 cm – 150 w to 1 kw
TRANSCRIPT
![Page 1: LDMOS Power Amplifiers for 23 cm – 150 W to 1 kW](https://reader033.vdocuments.net/reader033/viewer/2022052120/586e599f1a28ab04198c067f/html5/thumbnails/1.jpg)
Wolf-Henning RechDF9ICEisinger Str. 36/2D-75245 NeulingenGermany
JN48iw
http://www.df9ic.de
LDMOS Power Amplifiersfor 23 cm – 150 W to 1 kW
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MMRT 2015 Wolf-Henning Rech DF9IC 2
LDMOS: „full legal power“ ?
• Popular LDMOS amplifier modules (pallets):
• 144 MHz: 1 kW LDMOS MRFE6VP61K25
• 432 MHz: 500 W MRFE6VP5600
• 1296 MHz: 150 W 2 x MRF286
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Pallets without a shielding box
• OK for a prototype – but not for a product
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PAs based on such pallets
• Imperfectly shielded outer enclosures
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Module concept
• Use of a cheap shielding box, to be integratedwith a large heat spreader
• Low cost LDMOS surplus transistors (fromcellular, not broadcast market)
• Expensive components only where really needed(but reliable design nevertheless)
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Concept of the box
• Transistor is installed ona copper heat spreader
• Frame and cover from tinplated material (possiblyjoint with the heat spreader)
• PCB fixed with screws to thecopper and soldered to thetin plate frame
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Concept of the box
• Two separate PCBs for input and output circuits
• As few through-holes as possible
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High-current feedthrough
• Feedthrough capacitors for 10-25 A
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Which transistors for 1296 MHz?
• Cellular transistors for 900 MHz 60 W:MFR9060, MRF6S9060, MRF286 etc.(without internal pre-matching)
• Broadcast/ISM transistors for 1300/1400 MHz (internally pre-matched):PTF141501E 150 W 28 VBLF6G13L-250P 250 W 50 V
• Cellular transistors for 900 MHz 125…160 W:MRFE6S9125, MRFE6S9135, MRFE6S9160(only pre-matched at the input)
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My prefered 23 cm PA transistor
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MRFE6S9160HS – 10 EUR
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PA 1296 MHz: the prototype
• Let‘s try it !
With sucess: 150 W output power at 19…20 dB gain
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PA 1296 MHz: push-pull ?
• Experiment of a push-pull amplifier:
Poor result: assymetric behaviour, low efficiency.
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PA 1296 MHz: MRFE6S9160
• Design of an amplifier without through-holes close to the transistor:
Result: similar to the first prototype, but criticalcontacts at the PCB edges
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PA 1296 MHz: MRFE6S9160
• Soldering of the transistor to the heat spreader: first trials with tin-lead solder
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PA 1296 MHz: MRFE6S9160
• Result: this process was working, but caused severalfailures too (transistors had reduced transconductance)
• Then: use of a low temperature SMD solder paste -138°C – Edsyn CR11 Sn42Bi58 (tin – bismuth)
• Slowly heating and cooling the pallets
=> no more failures (from 20 transistors)!
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PA 1 x MRFE6S9160 RO4003
• Design verification with 4 new prototypes – all achieve>150 W at 28 V
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PA 1 x MRFE6S9160 RO4003
Duko
2k2
47
MRFE6S9160
5pMurataTZ03
8,2pATC600S
2,2p0805NP0
47p0805NP0
1n0805NP01k5,1V100n
2,7k+28 V TX
max. 10 mA
1n0805NP0
1n0805NP0
1n0805NP0
+28 Vmax. 12 A
6 x 3,3pATC100B
RF in
RF out2 x 47pATC600S
100µF63VDuko
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MMRT 2015 Wolf-Henning Rech DF9IC 20
PA 1 x MRFE6S9160 RO4003
MRFE6S9160 1296 MHz
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PA 1 x MRFE6S9160 FR4
• Another experiment on 1.5 mm FR4 substrate, as RO4003 isdifficult to buy in small quantities
• The result is lower output power and reduced efficiency
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MMRT 2015 Wolf-Henning Rech DF9IC 22
PA 1 x MRFE6S9160 FR4
MRFE6S9160 1296 MHz
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PA 2 x MRFE6S9160 RO4003
• Next stage: coupling of two amplifiers
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PA 1296 MHz: 2 x MRFE6S9160
• Prototype of the twin amplifier
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PA 1296 MHz: 2 x MRFE6S9160
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PA 1296 MHz: 2 x MRFE6S9160
• Result: success, nearly 300 W at 28 V, efficiency and gain bit lower than for the single amplifier
• Adjustment procedure: first supply and adjust eachtransistor single (resulting in 6 dB less gain and 3 dB less power than in a single amplifier); e. g. 5 W to 70 W
• then only minor fine adjustment necessary for the jointoperation (expect 5 W to 280 W then, according to theabove example)
• Next step: try to make PCB smaller and module simplierto build
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PA 1296 MHz: 2 x MRFE6S9160
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PA 1296 MHz: 2 x MRFE6S9160
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PA 1296 MHz: 2 x MRFE6S9160
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PA 1296 MHz: 2 x MRFE6S9160
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PA 1296 MHz: 2 x MRFE6S9160
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PA 1296 MHz: 2 x MRFE6S9160
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PA 1296 MHz: 2 x MRFE6S9160
Use an isolator in theinput during test andoptimization
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PA 1296 MHz: 2 x MRFE6S91602 x MRFE6S9160 1296 MHz
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PA 1296 MHz: 2 x MRFE6S9160
• Result:• Small high-power boxed amplifier module
• 275 W at 26 V – 305 W at 28 V – 340 W at 30,6 V
• 17 dB gain
• >50% efficiency
• Adjustment more difficult than with singletransistor module
• For bigger PAs I prefer to combine twin modulesexternally
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F5JWF: 4 x MRFE6S9160
Based on thesingle transistoramp
Couplers and total designby PhilippeF5JWF
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F5JWF: 4 x MRFE6S9160
Efficient watercooling
Psat >600 W
Philippe plansto mount twomodules behindhis dish feedfor EME
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How to make 1 kW on 1296?
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PA 1296 MHz: 8 x MRFE6S9160
4 modules
Input:Wilkinsoncoupleron FR4
Output:isolators +non-isolatedcoupler(antennacombiner)
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PSU 28 V >100 A
• PSU and DC filtering has to be investigated
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Conclusion
• Concept of a 150 W 1296 MHz power amplifiermodule with a bill of material cost <30 GBP
• PA with 2 transistors in a box with printedcouplers (min. 250 W for 60 GBP BOM)
• Higher power by combining multiple modules –1 kW demonstrated