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ECE723
Lecture 1: Introduction
The introduction covers the following:Semiconductor MaterialsSemiconductor DevicesBasic Fabrication Steps
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Figure 1.1 Gross world product (GWP) and sales volume of the electronics, automobile, semiconductor, and steel industries from
1980 to 2000 and projected to 2010
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Semiconductor Materials
Elemental SemiconductorsSi, Ge
III-V CompoundsAlP, AlAs, ALSb, GaN, GaP, GaAs, GaSb, InP, InAs, InSb
II-VI CompoundsZnO, ZnS, ZnSe, ZnTe, CdS, , CdSe, CdTe, HgS
AlloysAl1-xGaxAs, GaAs1-x Px, Hg1-x CdxTe, GaxIn1-xAs1-yPy
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Semiconductor DevicesMajor Semiconductor Devices
Year Semiconductor Device Author/Inventor
1874 Metal-semiconductor contact Braun
1907 Light Emitting Diode Round
1947 Bipolar Transistor Bardeen and Brittain; Shockley
1949 p-n Junction Shockley
1952 Thyristor Ebers
1954 Solar cell Chapin, Fuller, and Pearson
1957 Heterojunction bipolar transistor Kroemer
1958 Tunnel Diode Esaki
1960 MOSFET Kahng and Atalla
1962 Laser Hall, et. al.
1963 Heterostructure laser Kroemer; Alferow and Kazarinov
1963 Transferred-electron diode Gunn
1965 IMPATT diode Johnston, DeLoach, and Cohen
1966 MESFET Mead
1967 Nonvolatile semiconductor memory Kahng and Sze
1970 Charge-coupled device Boyle and Smith
1974 Resonant tunneling diode Chang, Esaki, and Tsu
1980 MODFET Mimura, et. al.
1994 Room-temperature single electron memory cell Yano, et. al.
2001 15-nm MOSFET Yu et. al.
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Figure 1.2 The first transistor. (Photograph courtesy of Bell Laboratories)
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Figure 1.3 The first metal-oxide-semiconductor field-
effect transistor. (Photograph courtesy of
Bell Laboratories
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Figure 1.4 The first monolithic integrated circuit. (Photograph courtesy of Dr. G.
Moore.)
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Figure 1.5 The first microprocessor.
(Photograph courtesy of Intel Corp.)
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Integrated Circuit Evolution
Progress due to:Feature size reduction - 0.7X/3 years (Moore’s Law)Increasing chip size - » 16% per year“Creativity” in implementing functions
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IC Layout
Approximately equal areas from ICs in 1961 and 1988.• ICs manufactured in the 1960s and late 1980s.
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IC Layout
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Figure 1.6 Exponential increase of dynamic
random access memory density versus year based
on the Semiconductor Industry Association
roadmap.
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Figure 1.7 Exponential increase of microprocessor computational power versus year.
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Figure 1.8 Growth curves for different technology
drivers.
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Figure 1.9 (a) A bare n-type Si wafer. (b) An oxidized Si wafer by dry or wet oxidation. (c) Application of resist. (d) Resist exposure through the mask.
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Figure 1.10 (a) The wafer after the development. (b) The wafer after SiO2 removal. (c) The final result after a complete lithographic process. (d) A p-n junction is formed in the diffusion or implantation process. (e) The wafer after metallization. (f) A p-njunction after the complete processes.
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Assignment #1
Research on Key Semiconductor Process Technologies.