lecture 2-intellisuite tutorial

RESEARCH CENTRE FOR INTEGRATED MICROSYSTEMS - UNIVERSITY OF WINDSOR

06-88-435 Microelectromechanical Systems (MEMS) Summer 2011

IntelliSuite TutorialLecture 2

Sazzadur Chowdhury, Ph.D.Electrical and Computer Engineering



Overview

• IntelliSuite is a MEMS design and verification tool

• The software can simulate actual steps in a fabrication process to develop a 3-D model of a MEMS device

• The developed 3-D model can then be used to perform 3-D simulations such as

• Electrostatic, Mechanical, Thermal or Coupled thermo-electro-mechanical simulations using finite element analysis method

• Microfluidics• Electromagnetic• Electrokinetics• Packaging• System level simulation• Macro-model extraction

http://www.intellisensesoftware.com



MEMS Process Simulation Design Flow

Wafer

Deposition Lithography Etch

3-D Model



MEMS 3-D Model Behavior Simulation Concept

3-D Model

Behavior Pattern

Boundary Condition

Load Meshing

Analysis Options

Fab. Proc. Simulation

Manual 3-D Builder



MEMS Simulation Objectives

• To investigate a material’s physical characteristics for suitability of it’s use in a particular device based on a specific deposition method

• Selection of a deposition or etching method for a material to obtain a desired device geometry

• To optimize the process steps

• Check for process compatibility

• To simulate the 3-D model of the device for behavior



IntelliSuite Overview

• IntelliFab• IntelliMask• Mematerial• 3-D Builder• Thermoelectromechanical Analysis• Microfluidics and BioMEMS• AnisE (Anisotropic Etch Simulation)• Technical Reference



IntelliFab: Getting Started

• Start • IntelliSuite• Intellifab



IntelliFab

• File

• Process

• Database

• Construct

• Simulation



Adding a Fabrication Process Step



Building a Process Table



3-D Visualization

•Construct

•Visualize

•Scale

•Sequence once

•Cross-section



Database

• This option allows you to add process steps to the currently open database.

• New materials are added to MEMaterial

• Deposition, Etching, Bond, Mask, Substrate,• Electroplating, Doping, Liftoff Metalization, or Clean.



Process Steps

• Bonding• Definition• Deposition• Doping• Electroplating• Etch• Sacrifice• Laser Ablation

(Ablation is the process of removing material by vaporization or disintegration.



IntelliMask

• Single Mask• Multilayer Mask• Convert (DXF, GDSII)• The IntelliSuite GDSII file converter provides several options.

Users can convert all cells, or just selected cells, of a multi-cell multi-level *.gds file into multi-layer *.msk files. A multi-layer *.msk file will be generated for each selected cell, and also for each sub cell of the selected cell



GDS Cell Tree After Conversion

•IntelliSuite Masks can be exported to GDSII format for fabrication



IntelliMask Features

• Manhattan geometry• Non-Manhattan Geometry• Cartesian Co-ordinate• Polar Coordinate• Switch layers

Mask Editor Tool Bar



Grids and Layers

•Keyboard Entry



Mematerial

• Mematerial is a powerful, easy-to-use simulation tool for the mechanical, electrical, and optical modeling of thin films deposited on silicon substrates.

• Applications include the design of:• Microsensors and microactuators

• Integrated circuits• Device packaging• Other silicon microstructures

• The software presents data on the properties of materials in two- and three dimensional graphs as well as in tables

• All data are experimentally verified• New values can be predicted using interpolation and

extrapolation



Mematerial

Single Parameter of interest

Two parameter of interest

Mematerial Window

Parameter Window

Parameter Graphs



Mematerial: Data Manipulation



3D Builder

2-D area 3-D Area



Elements Construction

• Gaps and overlaps cannot exist anywhere along the common edge when a continuous structure is modeled.

• The adjacent edges either must both be straight, or they must have compatible curvatures.



Mesh Refinement



ThermoelectricalMechanical Module



Analysis Option



Analysis Options: Static Analysis

• Stress/Displacement• Heat Transfer• Heat Transfer / Thermal Stress• Thermal Electrical• Thermal Electrical / Thermal Stress• ThermoElectroMechanical Relaxation• Electrostatic• Electrostatic Force vs. Displacement



Relaxation Method

Domain 102

111 )x,.....,x,x(f )i(

m)i()i(

Domain 2011

21

12 )x,.....,x,x(f )i(m

)i()i(

Domain m011

21

1 )x,.....,x,x(f )i(m

)i()i(m

Converged

i=i+1

YesNo



Analysis Options: Frequency Analysis

• Static Stress• Heat Transfer / Thermal Stress• ThermoElectroMechanical Relaxation



Analysis Options: Dynamic Analysis

• Stress / Disp. (Direct Integration)• Stress / Disp. (Mode Based)• Heat Transfer Transient• Thermal Electrical Transient• Stress / Disp. / Squeezed Film (Direct Integration)• Stress / Disp. / Electrostatic (Direct Integration)• Stress / Disp. / Electrostatic (Mode Based)• Stress / Disp. / Electrostatic / Squeezed Film (Direct Integration)



Analysis Options: Macro-Model

• Rigid Body Variables• Spring Constants• Squeezed Film Damping Variables• Capacitance• Capacitance vs. Displacement• Mechanical Reduced Order Modeling• ElectroMechanical Reduced Order Modeling



Loads

• Several types of loads can be applied in the ThermoElectroMechanical Analysis module: Temperature, Pressure, Displacement, Heat Convection, Heat Flux, Acceleration, Coriolis Force, Voltage, Current, and Charge Density.

• Loads can be applied on a face or a node• Amplitude vs Time• Amplitude vs Frequency



Boundary

• Fixed• YZ Fixed• XY fixed• XZ fixed• X fixed• Y Fixed• Z Fixed• Free• Attach spring, etc.



Load-Boundary Application Example

0 V DC 1 Pascal

12 V DCFixed Boundary

Fixed Boundary

• PECVD Nitride, Au and Ti layers are removed

• 4 lateral faces of the diaphragm are X, Y, Z fixed

• Nitride Backplate and wafer faces are X, Y, Z fixed



Mesh

• Automesh• User Defined mesh• Mechanical mesh• Electrical mesh



Result

• Displacement• Deformed shape• Stress components• Stress invariants• Potential• Electrical field• Current density• Capacitance• Charge density• Pressure• Natural frequency• Mode animation• Macromodel

• Node value

• Node curve

• 2-d plot- Mechanical

• 2-D plot-Electromechanical



Layout: Die Size

Die Size Entry Window

Click

• Construction

• Layout

• Die size



Electrostatic Comb Drive Example

• An electrostatic comb drive is a kind of resonator that is actuated electrostatically.

• The movement of the free comb due to electrostatic excitation changes the capacitance among the comb fingers, which is sensed and used to drive some other micro structure

Courtesy: Sandia Laboratory



Comb Drive Construction: Begin

Click•Construction

•Show Palette



Step 1Substrate Definition

Click • Definition

• Geometry• Si

• Czochralski

The OpSet window pops up and data can now be entered in the OpSet window



Substrate Definition OpSet Window

• Change parameters as necessary

Click• Add process• Add process

• The OpSet window disappears, and first step is entered into the Process Table.

• The Process Construction Palette remains on the screen

OpSet Window



Step 2: Substrate Clean Up

Click • Etch

• Element• Si

• Clean

Piranha: A solution of H2SO4 and H2O2 at 1200 C

Click• Process

• Piranha• Add Process

• Add Process



Result of 2nd Step

The wafer is cleaned and the 2nd step is added to the process construction tableClick

• Construction• Visualize

Visualizer window pops up

Click• Visualize

• AllA 3-D model of the structure is displayed. Using middle or right mouse button adjust a suitable view angle.



Step 3Silicon Dioxide Deposition

Click• Deposition

• Compounds• SiO2

• Thermal

• Time_dep (enter 600)• H20 pp (enter 10)• t-film (entert_685)• t_etch( enter 685)• t_after (enter 0)• Add Process• Add Process

OpSetWindowEntry

Process Construction Palette



Step 4Silicon Nitride Deposition

Click• Deposition

• Compounds• Si3N4

• PECVD

This layer protects the wafer during subsequent processing

• t_film (enter 1000)• Add Process

• Add Process



Step 5Cleaning After Plasma Deposition

Click• Etch

• Element• Si

• Clean

This cleaning step is necessary because diffusion cannot follow plasma deposition

RCA: A solution of NH4OH:H2O2:H2O

• Process• RCA

• Add Process• Add Process



Step 6Polysilicon Layer Deposition

Click• Deposition

• Compounds• PolySi

• LPCVD• t_film (enter 2000)




Step 7Aluminum Contact Deposition

Click• Deposit

• Element• Al

• Sputter• Process

• Ar-Ambient




Step 8Photoresist Deposition

Click• Deposition

• Polymers• PR-S1800

• Spin

PR-S1800 series is a positive photoresist. It is a proprietary chemical from Shipley Corporation, MA, USA. Main ingredients are: (1) Propylene glycol methyl ether acetate (70%), (2) A Novalac resin (20%), and (3) diazonapthoquinone (1-10%)




Step 9First Mask Definition

Click• Definition

• Mask• UV

• Contact• Mask Number (enter 1)

• Process• Suss




Mask Definition OpSet Window

ClickLayouttwice to invoke theMask Editor

Mask No.

(Must be a unique numerical value)



Mask Editor: First Mask



Step 10Photoresist Pattern

Click• Etch


• Wet• Process: 1112A (solvent)

• t_etch (enter 990000)• Add Process

• Add Process



Step 11Aluminum Etch

Click• Etch

• Element• Al

• Wet

PAN Phosphoric+Acetic+Nitric Acid

• Process• PAN

• t_etch (enter 990000)• Add process

• Add process



Step 12 Photoresist Strip

Click• Etch


• Wet• Process: 1165 (solvent)


• Add Process



Step 132nd Photoresist Deposition

Click• Deposition


• Spin• Add Process

• Add Process



Step142nd Mask Definition

Click• Definition

• Mask• UV

• Contact

This mask patterns the polysilicon layer

• Mask Number (enter 2)• Process

• Suss• Add Process

• Add Process



Mask Editor: Second Mask



Step 15Photoresist Etch

Click• Etch


• Wet• Process: 1112A (solvent)


• Add Process



Step 16Polysilicon Plasma Etch

Click• Etch

• Compound• Poly Si

• Dry• Process

• SF6-Plasma• T_etch (enter 990000)




Step 17Photoresist Strip

Click• Etch


• Wet• Process: 1165 (solvent)


• Add Process



Step 18Nitride Etch

Click• Etch

• Compound• Si3N4

• Wet

Phosphoric acid (70% concentrated)

• Process• Sacrifice

• t_etch (enter 1e6)• Add Process

•Add Process



Step 19Silicon Dioxide Etch

Click• Etch

• Compound• SiO2

• Wet

Buffered Oxide Etch (BOE) is a 5:1 mixture of NH4F and HF

• Process: BOE(solvent)• t_etch (enter 990000)




Step 20Substrate Sacrificial Etch

Click• Etch

• Element• Si

• Wet• Process

• Sacrifice• t_etch (enter 1e6)




Comb Drive 3-D model

Complete Process table 3_D Model



IntelliSuite Fabrication Simulation Example

Conceptual Drawing IntelliSuite Fabrication Simulation Result Cross-section



Intellisuite Fabrication Simulation of an Electromagnetic Microactuator



IntelliSuite Simulation Result of Electrostatic Pressure due to a Bias Voltage



IntelliSuite Simulation Result of Displacement due to Electrostatic Pressure due to a Bias Voltage



Animation of a Diaphragm Vibration for an Acoustical Wave at 1 kHz at 1 Pascal



IntelliSuite Dynamic Analysis Example

Transient Response of a Diaphragm Vibration for an Acoustical Wave at 1kHz at

1 Pascal



IntelliSuite Dynamic Analysis Example

Mode based steady state analysis

Resonant peak for first vibrational mode

lecture 2-intellisuite tutorial

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