lecture 6: electron-beam lithography, part 2 … · basic principle of electron-beam lithography...

15
Lecture 6: Electron-Beam Lithography, Part 2 Technology for Micro- and Nanostructures Micro- and Nanotechnology Peter Unger mailto: peter.unger @ uni-ulm.de Institute of Optoelectronics University of Ulm http://www.uni-ulm.de/opto Copyright 2012 by Peter Unger Peter Unger, Technology for Micro- and Nanostructures — Lecture 6: Electron-Beam Lithography, Part 2, Version of November 28, 2012 – p. 1/2 Outline of Lectures 5 and 6: E-Beam Lithography Part 1, Lecture 5 Basic Principle of Electron-Beam Lithography The Electron-Optical Column Lens Errors and Beam Size Mark Registration Field Overlay and Stitching Part 2, Lecture 6 Physics of Lenses for Electrons Scatter Effects of Electron Beams The Proximity Correction Peter Unger, Technology for Micro- and Nanostructures — Lecture 6: Electron-Beam Lithography, Part 2, Version of November 28, 2012 – p. 2/2

Upload: nguyenkhanh

Post on 01-Sep-2018

232 views

Category:

Documents


3 download

TRANSCRIPT

Page 1: Lecture 6: Electron-Beam Lithography, Part 2 … · Basic Principle of Electron-Beam Lithography Peter Unger, Technology for Micro- and Nanostructures Lectu re 6: Electron-Beam Lithography,

Lecture 6: Electron-Beam Lithography, Part 2

Technology for Micro- and NanostructuresMicro- and Nanotechnology

Peter Unger

mailto: peter.unger @ uni-ulm.de

Institute of Optoelectronics

University of Ulm

http://www.uni-ulm.de/opto

Copyright 2012 by Peter Unger

Peter Unger, Technology for Micro- and Nanostructures — Lecture 6: Electron-Beam Lithography, Part 2, Version of November 28, 2012 – p. 1/29

Outline of Lectures 5 and 6: E-Beam Lithography

Part 1, Lecture 5Basic Principle of Electron-Beam LithographyThe Electron-Optical ColumnLens Errors and Beam SizeMark RegistrationField Overlay and Stitching

Part 2, Lecture 6Physics of Lenses for ElectronsScatter Effects of Electron BeamsThe Proximity Correction

Peter Unger, Technology for Micro- and Nanostructures — Lecture 6: Electron-Beam Lithography, Part 2, Version of November 28, 2012 – p. 2/29

Page 2: Lecture 6: Electron-Beam Lithography, Part 2 … · Basic Principle of Electron-Beam Lithography Peter Unger, Technology for Micro- and Nanostructures Lectu re 6: Electron-Beam Lithography,

Basic Principle of Electron-Beam Lithography

Peter Unger, Technology for Micro- and Nanostructures — Lecture 6: Electron-Beam Lithography, Part 2, Version of November 28, 2012 – p. 3/29

Cross Section of an Electron-Optical Column

Peter Unger, Technology for Micro- and Nanostructures — Lecture 6: Electron-Beam Lithography, Part 2, Version of November 28, 2012 – p. 4/29

Page 3: Lecture 6: Electron-Beam Lithography, Part 2 … · Basic Principle of Electron-Beam Lithography Peter Unger, Technology for Micro- and Nanostructures Lectu re 6: Electron-Beam Lithography,

Forces in Electromagnetic Fields

Electric Fields~F = m~a = qe ~E

Magnetic Fields~F = m~a = qe (~v × ~B)

Lorentz Force

No Focusing of Electron Beams in Homogeneous Electrostaticand Magnetic Fields

Any Axially Symmetric Electrostatic or Magnetic Field has theProperty of a Focusing Lens

Peter Unger, Technology for Micro- and Nanostructures — Lecture 6: Electron-Beam Lithography, Part 2, Version of November 28, 2012 – p. 5/29

Electrostatic Electron Einzel Lens

Peter Unger, Technology for Micro- and Nanostructures — Lecture 6: Electron-Beam Lithography, Part 2, Version of November 28, 2012 – p. 6/29

Page 4: Lecture 6: Electron-Beam Lithography, Part 2 … · Basic Principle of Electron-Beam Lithography Peter Unger, Technology for Micro- and Nanostructures Lectu re 6: Electron-Beam Lithography,

Cross Section of a Magnetic Electron Lens

Peter Unger, Technology for Micro- and Nanostructures — Lecture 6: Electron-Beam Lithography, Part 2, Version of November 28, 2012 – p. 7/29

Functioning of a Magnetic Electron Lens

Peter Unger, Technology for Micro- and Nanostructures — Lecture 6: Electron-Beam Lithography, Part 2, Version of November 28, 2012 – p. 8/29

Page 5: Lecture 6: Electron-Beam Lithography, Part 2 … · Basic Principle of Electron-Beam Lithography Peter Unger, Technology for Micro- and Nanostructures Lectu re 6: Electron-Beam Lithography,

Lens Errors in Electron-Beam Optics

Peter Unger, Technology for Micro- and Nanostructures — Lecture 6: Electron-Beam Lithography, Part 2, Version of November 28, 2012 – p. 9/29

Aberation and Diffraction of an Objective Lens

δmin

αopt

Beam Divergence Angle α

Res

olut

ion

δ

Diffractionδ ~ 1/α

SphericAberationδ ~ α3

Sum of Diffractionand Spheric Aberation

Peter Unger, Technology for Micro- and Nanostructures — Lecture 6: Electron-Beam Lithography, Part 2, Version of November 28, 2012 – p. 10/29

Page 6: Lecture 6: Electron-Beam Lithography, Part 2 … · Basic Principle of Electron-Beam Lithography Peter Unger, Technology for Micro- and Nanostructures Lectu re 6: Electron-Beam Lithography,

Electron-Beam Lithography at 100 keV

Resist:PMMA/MAA

Substrate:Silicon

Peter Unger, Technology for Micro- and Nanostructures — Lecture 6: Electron-Beam Lithography, Part 2, Version of November 28, 2012 – p. 11/29

Electron-Beam Lithography at 100 keV

Resist:PMMA/MAA

Substrate:Silicon

Peter Unger, Technology for Micro- and Nanostructures — Lecture 6: Electron-Beam Lithography, Part 2, Version of November 28, 2012 – p. 12/29

Page 7: Lecture 6: Electron-Beam Lithography, Part 2 … · Basic Principle of Electron-Beam Lithography Peter Unger, Technology for Micro- and Nanostructures Lectu re 6: Electron-Beam Lithography,

Electron-Beam Lithography at 100 keV

Resist:PMMA/MAA

Dose:1 mC/cm2

Peter Unger, Technology for Micro- and Nanostructures — Lecture 6: Electron-Beam Lithography, Part 2, Version of November 28, 2012 – p. 13/29

Basic Electron Scattering Mechanisms

(after Hersener and Ricker)

Peter Unger, Technology for Micro- and Nanostructures — Lecture 6: Electron-Beam Lithography, Part 2, Version of November 28, 2012 – p. 14/29

Page 8: Lecture 6: Electron-Beam Lithography, Part 2 … · Basic Principle of Electron-Beam Lithography Peter Unger, Technology for Micro- and Nanostructures Lectu re 6: Electron-Beam Lithography,

Double Gaussian Model for the Dose Distribution

Peter Unger, Technology for Micro- and Nanostructures — Lecture 6: Electron-Beam Lithography, Part 2, Version of November 28, 2012 – p. 15/29

The Proximity Function

Double Gausssian Model for the Proximity Function f(r)

f(r) = k

[exp

(− r2

β2f

)+ ηE · β

2f

β2b

· exp(− r2

β2b

)]

Peter Unger, Technology for Micro- and Nanostructures — Lecture 6: Electron-Beam Lithography, Part 2, Version of November 28, 2012 – p. 16/29

Page 9: Lecture 6: Electron-Beam Lithography, Part 2 … · Basic Principle of Electron-Beam Lithography Peter Unger, Technology for Micro- and Nanostructures Lectu re 6: Electron-Beam Lithography,

The Proximity Function

Double Gausssian Model for the Proximity Function f(r)

f(r) = k

[exp

(− r2

β2f

)+ ηE · β

2f

β2b

· exp(− r2

β2b

)]

βf – Forward Scattering WidthBroadening of the Electron Beam

βb – Backward Scattering WidthSecondary Electron Emission from the Substrate

ηE – Backscatter CoefficientRatio of Backscattered to Forward Scattered Dose

Peter Unger, Technology for Micro- and Nanostructures — Lecture 6: Electron-Beam Lithography, Part 2, Version of November 28, 2012 – p. 17/29

Monte-Carlo Simulations of the Scattering

(after Jones, Blythe, and Ahmed, J. Vac. Sci. Technol. B, vol. 5, pp. 120–123, 1987)

Peter Unger, Technology for Micro- and Nanostructures — Lecture 6: Electron-Beam Lithography, Part 2, Version of November 28, 2012 – p. 18/29

Page 10: Lecture 6: Electron-Beam Lithography, Part 2 … · Basic Principle of Electron-Beam Lithography Peter Unger, Technology for Micro- and Nanostructures Lectu re 6: Electron-Beam Lithography,

Electron Scattering at Different Electron Energies

(after Michael Hatzakis, IBM J. Res. Develop., vol. 32, no. 4, pp. 441–453, 1988)

Peter Unger, Technology for Micro- and Nanostructures — Lecture 6: Electron-Beam Lithography, Part 2, Version of November 28, 2012 – p. 19/29

Scattering at Different Electron Energies

Peter Unger, Technology for Micro- and Nanostructures — Lecture 6: Electron-Beam Lithography, Part 2, Version of November 28, 2012 – p. 20/29

Page 11: Lecture 6: Electron-Beam Lithography, Part 2 … · Basic Principle of Electron-Beam Lithography Peter Unger, Technology for Micro- and Nanostructures Lectu re 6: Electron-Beam Lithography,

Forward Scattering

Peter Unger, Technology for Micro- and Nanostructures — Lecture 6: Electron-Beam Lithography, Part 2, Version of November 28, 2012 – p. 21/29

Proximity Distributions at Different Electron Energies

Peter Unger, Technology for Micro- and Nanostructures — Lecture 6: Electron-Beam Lithography, Part 2, Version of November 28, 2012 – p. 22/29

Page 12: Lecture 6: Electron-Beam Lithography, Part 2 … · Basic Principle of Electron-Beam Lithography Peter Unger, Technology for Micro- and Nanostructures Lectu re 6: Electron-Beam Lithography,

The Backscatter Coefficient

(after Hunger and Küchler, 1979)

Peter Unger, Technology for Micro- and Nanostructures — Lecture 6: Electron-Beam Lithography, Part 2, Version of November 28, 2012 – p. 23/29

Interaction of the Electron Beam with the Substrate

Forward Scattering:Broadening of the Electron Beamβf Decreases with Increasing Electron Energy E

Backward Scattering:Secondary Electron Emission from the Substrateβb Increases with Increasing EnergyBackscatter Coefficient ηE ∝ Z

Proximity Effect CorrectionDose VariationPattern Partitioning

Peter Unger, Technology for Micro- and Nanostructures — Lecture 6: Electron-Beam Lithography, Part 2, Version of November 28, 2012 – p. 24/29

Page 13: Lecture 6: Electron-Beam Lithography, Part 2 … · Basic Principle of Electron-Beam Lithography Peter Unger, Technology for Micro- and Nanostructures Lectu re 6: Electron-Beam Lithography,

Pattern Partitioning

Peter Unger, Technology for Micro- and Nanostructures — Lecture 6: Electron-Beam Lithography, Part 2, Version of November 28, 2012 – p. 25/29

Pattern Partitioning and Dose Variation

Peter Unger, Technology for Micro- and Nanostructures — Lecture 6: Electron-Beam Lithography, Part 2, Version of November 28, 2012 – p. 26/29

Page 14: Lecture 6: Electron-Beam Lithography, Part 2 … · Basic Principle of Electron-Beam Lithography Peter Unger, Technology for Micro- and Nanostructures Lectu re 6: Electron-Beam Lithography,

Example of Proximity Correction

Peter Unger, Technology for Micro- and Nanostructures — Lecture 6: Electron-Beam Lithography, Part 2, Version of November 28, 2012 – p. 27/29

Data Flow for Electron-Beam Lithography

Physical Design (CAD System)=⇒ Pattern Data File

Proximity CorrectionPattern Partitioning and Dose Variation

Digital Pattern GeneratorMark Registration (Using Electron Detectors)Stage ControlDeflection Correction(Shift, Scale, Rotation, Non-Orthogonality)Deflection UnitBeam Blanker

Peter Unger, Technology for Micro- and Nanostructures — Lecture 6: Electron-Beam Lithography, Part 2, Version of November 28, 2012 – p. 28/29

Page 15: Lecture 6: Electron-Beam Lithography, Part 2 … · Basic Principle of Electron-Beam Lithography Peter Unger, Technology for Micro- and Nanostructures Lectu re 6: Electron-Beam Lithography,

Further Reading

Henry I. SmithSubmicron- and nanometer-structures technology, 2nd editionLecture 4, Electron Optics and the TEMLecture 5, Scanning Electron Beam SystemsLecture 14, Electron-Beam LithographyLecture 15, Electron Scattering and Proximity EffectsNanoStructures Press, 437 Peakham Road, Sudbury, MA 01776, USA 1994

Peter Unger, Technology for Micro- and Nanostructures — Lecture 6: Electron-Beam Lithography, Part 2, Version of November 28, 2012 – p. 29/29