lecture 9 biomedical microtechnology and nanotechnology · the plates of a micro sized capacitor...
TRANSCRIPT
Lectu
re 9
Bio
medic
al
Mic
rote
chnolo
gy
and
Nanote
chnolo
gy
Microfabricationand Nanofabrication
applied to Biomedical Instrumentation
Why Micro/Nano?
SCALING OF PARAMETERS
The values of various parameters depends on the dimensions of the system
and this proves to be helpful in a number of cases.
Exam
ple
: C
antile
ver
bendin
g(M
echanic
al Para
mete
rs)
Force F
Deflection d
Density of Material = 3.5 x 103kg/m
3
Young’s Modulus = 1012N/m
2
Material properties such as Young’s modulus remain approximately the
same in the micro and macro versions.
However, they are relatively more different in case of nanodimensions
because nanodimensions come closer to molecular level.
Why Micro/Nano?
SCALING OF PARAMETERS
Mass
Mass = Density x Volume = Constant x S
3
Consider that the dimensions of the cantilever are reduced 10000times, i.e
the length, breadth and thickness change from 100 cm, 10cm and 1cm to
100microns, 10 microns and 1 micron respectively.
If S represents any dimension in general then,
Therefore mass goes down (104)3or is reduced 1012times as the original beam
Str
ength
to M
ass R
atio
Total strength scales with its cross-sectional area. Hence, total strength scales
as S
2. Hence, total strength to mass ratio scales as S
-1.
As a result, the micro cantilever is 104times stronger than the macro model.
Why Micro/Nano?
SCALING OF PARAMETERS
Deflection
333
4
3Ebt
Fl
EI
Fl
d=
=
Moment of Inertia
Young’s Modulus
Force
thickness
breadthlength
Force will vary with cross-sectional area if the stress is to be kept constant
Therefore, deflection is proportional to S
1. Therefore, the same stress is
generated in the two models if the deflection in the microcantileveris 10-4
times the deflection in the macro model, thus maintaining the bending shape.
A much smaller force can be sensed (10-8times) with the micro cantilever.
Why M
icro
/Nano
?
SCALING OF PARAMETERS
Fre
quency
Frequency scales as the square root of the ratio of the stiffness and
mass. Thus, frequency scales as S
-1. Hence, micro and nano
applications can be high frequency applications.
Huang e
t al h
ave a
chie
ved a
nanom
echanic
alsilic
on c
arb
ide
resonato
r fo
r ultra
hig
h fre
quency
applications.
Resonant fr
equencie
s h
ave b
een a
s h
igh
as 6
32 M
Hz.
Refe
rence :
htt
p://w
ww
.bu.e
du/n
em
s/S
iC%
20hig
h%
20fr
equency%
20H
enry
Why M
icro
/Nano
?
SCALING OF PARAMETERS
Exam
ple
: C
apacitor(E
lectr
ical P
ara
mete
rs)
Voltage
Voltage = E x gap
Thus, voltage will scale as the gap between the plates.Therefore a
much smaller voltage will be required in the micro case to produce
the same effect.
If the same electric field E = 108V/m needs to be mainitainedbetween
the plates of a micro sized capacitor and a macro sized capacitor, then
gap
+ V
gnd
Why M
icro
/Nano
?
SCALING OF PARAMETERS
Ele
ctr
osta
tic F
orc
e
Electrostatic force = Area x (electrostatic field)2
Thus, electrostatic force scales as S
2if electrostatic field is maintained same.
However, if voltage is to be maintained same, electrostatic force would be
independent of scaling.However, its effect in the micro case would be more
pronounced because relatively, inertial forces are very low.
Electromagnetic force scales as S
4 if magnetic field is to be constant and thus,
the world of memsrelies on electrostatic motors as opposed to electromagnetic
motors .
Capacitance
Capacitance scales as S
1.
Why M
icro
/Nano
?
An electrostatic micromotor
SCALING OF PARAMETERS
An electrostatic comb drive actuator
Advantages of Micro/NanoFluidics
for Biomedical Applications
•D
evic
e siz
e fo
r hand-h
eld
in
str
um
enta
tion and poin
t-of-care
te
sting is m
inim
al.
•Pro
vid
es f
or
effic
ient
use o
f expensiv
e c
hem
ical
reagents
and
low
pro
duction
costs
per
devic
e
allow
ing
dis
posable
m
icro
fluid
icsyste
ms.
•Pre
cis
e v
olu
metr
ic c
ontr
ol of sam
ple
s a
nd r
eagents
is p
ossib
le,
whic
h leads to h
igher sensitiv
itie
s.
•H
igh-thro
ughput
bio
logic
al
scre
enin
g
is
made
possib
le
by
faste
r sam
pling tim
es thro
ugh p
ara
llel pro
cessin
g o
f sam
ple
s.
•In
-situ p
roduction o
f unsta
ble
com
pounds for
bio
logic
al assays
is a
lso p
ossib
le.
•R
atio o
f surf
ace a
rea to v
olu
me is h
igh a
nd thus, th
e s
ensin
g is
more
effective in c
ase o
f ele
ctr
ochem
ical sensors
etc
.
Disadvantages of Micro/Nano
Fluidics for Biomedical Applications
•B
ubble
s b
lock e
xits.
This
could
be c
ontr
olled b
y e
ither prim
ing a
t hig
h p
ressure
s o
r by u
sin
g d
iffe
rent prim
ing a
gents
such a
s e
thanol or carb
on
dio
xid
e.
•U
nw
ante
d p
art
icle
s
Fin
e filte
ring o
f solu
tions b
ecom
es im
port
ant.
•Surf
ace tensio
n p
lays funny.
Mic
roscale
modeling n
eeds to b
e d
one a
nd m
echanic
s is n
ot
part
icula
rly intu
itiv
e. H
ow
ever, s
urf
ace tensio
n forc
es c
ould
be
explo
ited a
s w
ell !
•In
terf
acin
g w
ith the m
acro
scale
equip
ment is
not easy.
Micro/Nanoapplied to BME
Taken from : http://mems.colorado.edu/c1.res.ppt/ppt/g.tutorial/ppt.htm
Micro/Nanoapplied to BME
Taken from : www.heartcenteronline.com
Micro/Nanoapplied to BME
Balloon Angioplasty
and
StentProcedure
Ste
nt
Pro
cedure
htt
p:/
/ww
w.m
dm
ercy
.co
m/v
ascu
lar/
dis
cover
i
es/b
allo
on
_st
ent_
gif
_b
ig.h
tml
htt
p:/
/ww
w.m
ed.u
mic
h.e
du
/1li
br/
aha/
aha_
dil
atio
n_
art.
htm
Bal
loon A
ngio
pla
sty
Micro/Nanoapplied to BME
Micromachinedsilicon neural probe arrays
Taken from
http://www.ee.ucla.edu/~jjudy/publications/conference/msc_2000_judy.pdf
Michigan Probe
Micro/Nanoapplied to BME
Drug Delivery Probes
Micro/Nanoapplied to BME
Micro/Nanoapplied to BME
An implantable blood
pressure sensor developed
by CardioMEMS
Surgical microgripperactuated by SMA
Taken from
http://www.ee.ucla.edu/~jjudy/publications/conference/msc_2000_judy.pdf
Micro/Nano
Fabrication Techniques
Generalized Microfabrication
Taken from : http://mems.colorado.edu/c1.res.ppt/ppt/g.tutorial/ppt.htm
Photolithography
Cle
an w
afe
r: to remove particles on the surface as well as any
traces of organic, ionic, and metallic impurities
Dehydra
tion b
ake: to drive off the absorbed water on the surface
to promote the adhesion of PR
Coating :
a) Coat wafer with adhesion promoting film
(e.g., HMDS) (optional)
b) Coat with photoresist
Soft
bake: to drive off excess solvent and to promote adhesion
Exposure
Post exposure
bake(optional): to suppress standing wave-effect
Develo
p
Cle
an, D
ry
Hard
bake: to harden the PR and improve adhesion to the
substrate
Photolithography
Taken from :http://www2.ece.jhu.edu/faculty/andreou/495/2003/LectureNotes/Handout3a_PhotolithographyI.pdf
Add
itiv
e P
roce
sses
Oxid
ation
Thermal Oxidation of Silicon is done in a furnace in wet or dry conditions
Add
itiv
e P
roce
sses
Dopin
gPurp
ose o
f D
opin
g in M
EM
S
-Make P++ etch stop
-Change restivityof the film
(e.g. make piezoresistor,connectingwire)
Dopants: N type (Phosphorous, Arsenic), P type (Boron)
Dopin
g M
eth
ods
1.Diffusion
Dopantsare diffused thermally into the
substrate in furnace at 950 –1280 0C.
It is governed by Fick’sLaws of Diffusion.
Dopantions bombarded into targeting
substrate by high energy.
Ion implantation are able to place any ion at
any depth in sample.
2. Ion Implantation
Add
itiv
e P
roce
sses
Physic
al V
apor
Depositio
n (P
VD
)
1. E
vapora
tion
Thermal Evaporator
Deposition is achieved by evaporation
or sublim
ation of heated metal onto
substrate.
This can be done either by resistance
heating or by e-beam bombardment.
Additive Processes
Physic
al V
apor
Depositio
n (P
VD
)
2. Sputtering
Sputtering is achieved by accelerated
inert ion (Ar+) by DC or RF drive in
plasma through potential gradient to
bombard metallic target.
Then the targeting material is
sputtered away and deposited onto
substrate placed on anode.
Additive Processes
Physic
al V
apor
Depositio
n (P
VD
)
Additive Processes
Chem
ical V
apor D
epositio
n (C
VD
)
Mate
rials
deposited
Polysilicon, silicon nitride (Si3N4), silicon oxide (SiOx), silicon carbide (SiC) etc.
How
does C
VD
Work
?
EGaseous reactants are introduced into chamber at elevated temperatures.
EReactant reacts and deposits onto substrate
Types o
f C
VD
LPCVD (Low Pressure CVD), PECVD (Plasma Enhanced CVD)
Salient Featu
res
ECVD results depend on pressure, gas, and temperature
ECan be diffusion or reaction limited
EVaries from film
composition, crystallization, deposition rate and electrical and
mechanical properties
Subtractive Processes
Dry Etching
1. D
ry C
hem
ical Etc
hin
g
HF E
tchin
g
HF is a powerful etchantand hence, highly dangerous.
XeF
2Etc
hin
g
2XeF2+Si→2Xe+SiF4
EIsotropic etching (typically 1-3µm/min)
EDoes not attack aluminum, silicon dioxide, and silicon nitride
Subtractive Processes
Reaction M
echanis
m
Produce reactive species in gas-phase Reactive species diffuse to the solid
Adsorption, and diffuse over the surface Reaction Desorption
Diffusion
Dry
Etc
hin
g
Pla
sm
a E
tchin
g
Subtractive Processes
Dry Etching
3. D
eep R
eactive Ion E
tchin
g (D
RIE
)
A very high-aspect-ratio silicon etch method
(usually > 30:1)
BO
SC
H P
rocess
EEtch rate is 1.5 –4 µm/min
ESF6 to etch silicon
EApprox. 10nm flourcarbonpolymer (similar
is plasma deposited using C
4H8
EEnergetic ions (SF6+) remove protective
polymer at the bottom trench
Subtractive Processes
DRIE Etched Pillars
Subtractive Processes
Wet Etching
Isotropic etchantsetch in all directions
at nearly the same rate.
Commonly use chemical for Silicon is
HNA (HF/HNO3/Acetic Acid)
This results in a finite amount of
undercutting
Isotr
opic
Wet Etc
hin
g
Subtr
active P
rocesses
Wet Etching
Anisotropic etchantsetch much faster
in one direction than in another.
Etchantsare generally Alkali
Hydroxides (KOH, NaOH, CeOH, ..)
KO
H o
n s
ilic
on
ESlower etch rate on (111) planes
EHigher etch rate on (100) and (110)
planes (400 times more faster than
the (111) plane)
ETypical concentration of KOH
is around 40 wt%
Reaction:
Silicon (s) + Water + Hydroxide Ions →
Silicates + Hydrogen
Anis
otr
opic
Wet Etc
hin
g
Metal Patterning
Surface Micromachining
Example
An insulin pump fabricated by classic MEMS technology
(Surface Micromachining)
1. Pumping membrane
2. Pumping chamber
3. Inlet
4. Outlet
5. Large mesa
6. Upper glass plate
7. Bottom glass plate
8. patterned thin layer (for improved fluidics)
MEMS Packaging
Fabrication of
MicrofluidicChannels
Materials
•Silicon / Sicompounds
-Classical MEMS approach
-Etching involved
•Polymers / Plastics
-Newer methods
-primary die yet needed
-easy fabrication of subsequent
components
Etching Methods
Step 1 : Etching of Si
-Isotropic / Anisotropic
-HNA for isotropic
-KOH/EDP/TMAH for
anisotropic
-RIE can also be used
for high aspect ratios
Etching Methods
Step 2 : Closure of channel
a)Bonding another
substrate
b)LPCVD coating
c)Ground Plate Supported
Insulating Channels
Etching Methods
Step 2 : Closure
d) Closing Holes in the
mask material
-channel is defined
by a sequence of
holes.
-channel formed by
underetching
Etching Methods
Step 2 : Closure
e) Burying channels
beneath surface
-Trench made using
RIE.
-KOH etching to form
microchannels
-Oxide fills trench
Surface Micromachining
A Comparative study
Using Polymers/Plastics
•Imprinting and Hot Embossing
•Injection Molding
•Laser Photoablation
•Soft Lithography
•X ray Lithography (LIGA)
Imprinting/Embossing
•Stamp made in Sior
metal
•Stamp pressed on
Plastic to form
microfluidic channels
•Many common
plastics successfully
imprinted
Soft Lithography
•Elastomericpolymer
cast in a Sistamp and
cured
•Polymer is peeled off
•Channel architecture
thus transferred to the
polymer
•PDMS technology is
becoming popular
Laser Photoablation
•High aspect ratio
channels achievable
•Laser pulses in the
UV region used
•Sealing by thermal
lamination with a
PET/PE film
at 1250C
•Depth controllable
References
http://www.kuos.org/archives/MEMS%20Short%20Course.p
df
http://mems.colorado.edu/c1.res.ppt/ppt/g.tutorial/ppt.htm
http://mems.cwru.edu/shortcourse/
http://www2.ece.jhu.edu/faculty/andreou/495/2003/LectureNotes/Handout3a_Ph
otolithographyI.pdf
http://www.memsnet.org
Lectu
re 9
Bio
medic
al
Mic
rote
chnolo
gy
and
Nanote
chnolo
gy
Microfabricationand Nanofabrication
applied to Biomedical Instrumentation
Why Micro/Nano?
SCALING OF PARAMETERS
The values of various parameters depends on the dimensions of the system
and this proves to be helpful in a number of cases.
Exam
ple
: C
antile
ver
bendin
g(M
echanic
al Para
mete
rs)
Force F
Deflection d
Density of Material = 3.5 x 103kg/m
3
Young’s Modulus = 1012N/m
2
Material properties such as Young’s modulus remain approximately the
same in the micro and macro versions.
However, they are relatively more different in case of nanodimensions
because nanodimensions come closer to molecular level.
Why Micro/Nano?
SCALING OF PARAMETERS
Mass
Mass = Density x Volume = Constant x S
3
Consider that the dimensions of the cantilever are reduced 10000times, i.e
the length, breadth and thickness change from 100 cm, 10cm and 1cm to
100microns, 10 microns and 1 micron respectively.
If S represents any dimension in general then,
Therefore mass goes down (104)3or is reduced 1012times as the original beam
Str
ength
to M
ass R
atio
Total strength scales with its cross-sectional area. Hence, total strength scales
as S
2. Hence, total strength to mass ratio scales as S
-1.
As a result, the micro cantilever is 104times stronger than the macro model.
Why Micro/Nano?
SCALING OF PARAMETERS
Deflection
333
4
3Ebt
Fl
EI
Fl
d=
=
Moment of Inertia
Young’s Modulus
Force
thickness
breadthlength
Force will vary with cross-sectional area if the stress is to be kept constant
Therefore, deflection is proportional to S
1. Therefore, the same stress is
generated in the two models if the deflection in the microcantileveris 10-4
times the deflection in the macro model, thus maintaining the bending shape.
A much smaller force can be sensed (10-8times) with the micro cantilever.
Why M
icro
/Nano
?
SCALING OF PARAMETERS
Fre
quency
Frequency scales as the square root of the ratio of the stiffness and
mass. Thus, frequency scales as S
-1. Hence, micro and nano
applications can be high frequency applications.
Huang e
t al h
ave a
chie
ved a
nanom
echanic
alsilic
on c
arb
ide
resonato
r fo
r ultra
hig
h fre
quency
applications.
Resonant fr
equencie
s h
ave b
een a
s h
igh
as 6
32 M
Hz.
Refe
rence :
htt
p://w
ww
.bu.e
du/n
em
s/S
iC%
20hig
h%
20fr
equency%
20H
enry
Why M
icro
/Nano
?
SCALING OF PARAMETERS
Exam
ple
: C
apacitor(E
lectr
ical P
ara
mete
rs)
Voltage
Voltage = E x gap
Thus, voltage will scale as the gap between the plates.Therefore a
much smaller voltage will be required in the micro case to produce
the same effect.
If the same electric field E = 108V/m needs to be mainitainedbetween
the plates of a micro sized capacitor and a macro sized capacitor, then
gap
+ V
gnd
Why M
icro
/Nano
?
SCALING OF PARAMETERS
Ele
ctr
osta
tic F
orc
e
Electrostatic force = Area x (electrostatic field)2
Thus, electrostatic force scales as S
2if electrostatic field is maintained same.
However, if voltage is to be maintained same, electrostatic force would be
independent of scaling.However, its effect in the micro case would be more
pronounced because relatively, inertial forces are very low.
Electromagnetic force scales as S
4 if magnetic field is to be constant and thus,
the world of memsrelies on electrostatic motors as opposed to electromagnetic
motors .
Capacitance
Capacitance scales as S
1.
Why M
icro
/Nano
?
An electrostatic micromotor
SCALING OF PARAMETERS
An electrostatic comb drive actuator
Advantages of Micro/NanoFluidics
for Biomedical Applications
•D
evic
e siz
e fo
r hand-h
eld
in
str
um
enta
tion and poin
t-of-care
te
sting is m
inim
al.
•Pro
vid
es f
or
effic
ient
use o
f expensiv
e c
hem
ical
reagents
and
low
pro
duction
costs
per
devic
e
allow
ing
dis
posable
m
icro
fluid
icsyste
ms.
•Pre
cis
e v
olu
metr
ic c
ontr
ol of sam
ple
s a
nd r
eagents
is p
ossib
le,
whic
h leads to h
igher sensitiv
itie
s.
•H
igh-thro
ughput
bio
logic
al
scre
enin
g
is
made
possib
le
by
faste
r sam
pling tim
es thro
ugh p
ara
llel pro
cessin
g o
f sam
ple
s.
•In
-situ p
roduction o
f unsta
ble
com
pounds for
bio
logic
al assays
is a
lso p
ossib
le.
•R
atio o
f surf
ace a
rea to v
olu
me is h
igh a
nd thus, th
e s
ensin
g is
more
effective in c
ase o
f ele
ctr
ochem
ical sensors
etc
.
Disadvantages of Micro/Nano
Fluidics for Biomedical Applications
•B
ubble
s b
lock e
xits.
This
could
be c
ontr
olled b
y e
ither prim
ing a
t hig
h p
ressure
s o
r by u
sin
g d
iffe
rent prim
ing a
gents
such a
s e
thanol or carb
on
dio
xid
e.
•U
nw
ante
d p
art
icle
s
Fin
e filte
ring o
f solu
tions b
ecom
es im
port
ant.
•Surf
ace tensio
n p
lays funny.
Mic
roscale
modeling n
eeds to b
e d
one a
nd m
echanic
s is n
ot
part
icula
rly intu
itiv
e. H
ow
ever, s
urf
ace tensio
n forc
es c
ould
be
explo
ited a
s w
ell !
•In
terf
acin
g w
ith the m
acro
scale
equip
ment is
not easy.
Micro/Nanoapplied to BME
Taken from : http://mems.colorado.edu/c1.res.ppt/ppt/g.tutorial/ppt.htm
Micro/Nanoapplied to BME
Taken from : www.heartcenteronline.com
Micro/Nanoapplied to BME
Balloon Angioplasty
and
StentProcedure
Ste
nt
Pro
cedure
htt
p:/
/ww
w.m
dm
ercy
.co
m/v
ascu
lar/
dis
cover
i
es/b
allo
on
_st
ent_
gif
_b
ig.h
tml
htt
p:/
/ww
w.m
ed.u
mic
h.e
du
/1li
br/
aha/
aha_
dil
atio
n_
art.
htm
Bal
loon A
ngio
pla
sty
Micro/Nanoapplied to BME
Micromachinedsilicon neural probe arrays
Taken from
http://www.ee.ucla.edu/~jjudy/publications/conference/msc_2000_judy.pdf
Michigan Probe
Micro/Nanoapplied to BME
Drug Delivery Probes
Micro/Nanoapplied to BME
Micro/Nanoapplied to BME
An implantable blood
pressure sensor developed
by CardioMEMS
Surgical microgripperactuated by SMA
Taken from
http://www.ee.ucla.edu/~jjudy/publications/conference/msc_2000_judy.pdf
Micro/Nano
Fabrication Techniques
Generalized Microfabrication
Taken from : http://mems.colorado.edu/c1.res.ppt/ppt/g.tutorial/ppt.htm
Photolithography
Cle
an w
afe
r: to remove particles on the surface as well as any
traces of organic, ionic, and metallic impurities
Dehydra
tion b
ake: to drive off the absorbed water on the surface
to promote the adhesion of PR
Coating :
a) Coat wafer with adhesion promoting film
(e.g., HMDS) (optional)
b) Coat with photoresist
Soft
bake: to drive off excess solvent and to promote adhesion
Exposure
Post exposure
bake(optional): to suppress standing wave-effect
Develo
p
Cle
an, D
ry
Hard
bake: to harden the PR and improve adhesion to the
substrate
Photolithography
Taken from :http://www2.ece.jhu.edu/faculty/andreou/495/2003/LectureNotes/Handout3a_PhotolithographyI.pdf
Add
itiv
e P
roce
sses
Oxid
ation
Thermal Oxidation of Silicon is done in a furnace in wet or dry conditions
Add
itiv
e P
roce
sses
Dopin
gPurp
ose o
f D
opin
g in M
EM
S
-Make P++ etch stop
-Change restivityof the film
(e.g. make piezoresistor,connectingwire)
Dopants: N type (Phosphorous, Arsenic), P type (Boron)
Dopin
g M
eth
ods
1.Diffusion
Dopantsare diffused thermally into the
substrate in furnace at 950 –1280 0C.
It is governed by Fick’sLaws of Diffusion.
Dopantions bombarded into targeting
substrate by high energy.
Ion implantation are able to place any ion at
any depth in sample.
2. Ion Implantation
Add
itiv
e P
roce
sses
Physic
al V
apor
Depositio
n (P
VD
)
1. E
vapora
tion
Thermal Evaporator
Deposition is achieved by evaporation
or sublim
ation of heated metal onto
substrate.
This can be done either by resistance
heating or by e-beam bombardment.
Additive Processes
Physic
al V
apor
Depositio
n (P
VD
)
2. Sputtering
Sputtering is achieved by accelerated
inert ion (Ar+) by DC or RF drive in
plasma through potential gradient to
bombard metallic target.
Then the targeting material is
sputtered away and deposited onto
substrate placed on anode.
Additive Processes
Physic
al V
apor
Depositio
n (P
VD
)
Additive Processes
Chem
ical V
apor D
epositio
n (C
VD
)
Mate
rials
deposited
Polysilicon, silicon nitride (Si3N4), silicon oxide (SiOx), silicon carbide (SiC) etc.
How
does C
VD
Work
?
EGaseous reactants are introduced into chamber at elevated temperatures.
EReactant reacts and deposits onto substrate
Types o
f C
VD
LPCVD (Low Pressure CVD), PECVD (Plasma Enhanced CVD)
Salient Featu
res
ECVD results depend on pressure, gas, and temperature
ECan be diffusion or reaction limited
EVaries from film
composition, crystallization, deposition rate and electrical and
mechanical properties
Subtractive Processes
Dry Etching
1. D
ry C
hem
ical Etc
hin
g
HF E
tchin
g
HF is a powerful etchantand hence, highly dangerous.
XeF
2Etc
hin
g
2XeF2+Si→2Xe+SiF4
EIsotropic etching (typically 1-3µm/min)
EDoes not attack aluminum, silicon dioxide, and silicon nitride
Subtractive Processes
Reaction M
echanis
m
Produce reactive species in gas-phase Reactive species diffuse to the solid
Adsorption, and diffuse over the surface Reaction Desorption
Diffusion
Dry
Etc
hin
g
Pla
sm
a E
tchin
g
Subtractive Processes
Dry Etching
3. D
eep R
eactive Ion E
tchin
g (D
RIE
)
A very high-aspect-ratio silicon etch method
(usually > 30:1)
BO
SC
H P
rocess
EEtch rate is 1.5 –4 µm/min
ESF6 to etch silicon
EApprox. 10nm flourcarbonpolymer (similar
is plasma deposited using C
4H8
EEnergetic ions (SF6+) remove protective
polymer at the bottom trench
Subtractive Processes
DRIE Etched Pillars
Subtractive Processes
Wet Etching
Isotropic etchantsetch in all directions
at nearly the same rate.
Commonly use chemical for Silicon is
HNA (HF/HNO3/Acetic Acid)
This results in a finite amount of
undercutting
Isotr
opic
Wet Etc
hin
g
Subtr
active P
rocesses
Wet Etching
Anisotropic etchantsetch much faster
in one direction than in another.
Etchantsare generally Alkali
Hydroxides (KOH, NaOH, CeOH, ..)
KO
H o
n s
ilic
on
ESlower etch rate on (111) planes
EHigher etch rate on (100) and (110)
planes (400 times more faster than
the (111) plane)
ETypical concentration of KOH
is around 40 wt%
Reaction:
Silicon (s) + Water + Hydroxide Ions →
Silicates + Hydrogen
Anis
otr
opic
Wet Etc
hin
g
Metal Patterning
Surface Micromachining
Example
An insulin pump fabricated by classic MEMS technology
(Surface Micromachining)
1. Pumping membrane
2. Pumping chamber
3. Inlet
4. Outlet
5. Large mesa
6. Upper glass plate
7. Bottom glass plate
8. patterned thin layer (for improved fluidics)
MEMS Packaging
Fabrication of
MicrofluidicChannels
Materials
•Silicon / Sicompounds
-Classical MEMS approach
-Etching involved
•Polymers / Plastics
-Newer methods
-primary die yet needed
-easy fabrication of subsequent
components
Etching Methods
Step 1 : Etching of Si
-Isotropic / Anisotropic
-HNA for isotropic
-KOH/EDP/TMAH for
anisotropic
-RIE can also be used
for high aspect ratios
Etching Methods
Step 2 : Closure of channel
a)Bonding another
substrate
b)LPCVD coating
c)Ground Plate Supported
Insulating Channels
Etching Methods
Step 2 : Closure
d) Closing Holes in the
mask material
-channel is defined
by a sequence of
holes.
-channel formed by
underetching
Etching Methods
Step 2 : Closure
e) Burying channels
beneath surface
-Trench made using
RIE.
-KOH etching to form
microchannels
-Oxide fills trench
Surface Micromachining
A Comparative study
Using Polymers/Plastics
•Imprinting and Hot Embossing
•Injection Molding
•Laser Photoablation
•Soft Lithography
•X ray Lithography (LIGA)
Imprinting/Embossing
•Stamp made in Sior
metal
•Stamp pressed on
Plastic to form
microfluidic channels
•Many common
plastics successfully
imprinted
Soft Lithography
•Elastomericpolymer
cast in a Sistamp and
cured
•Polymer is peeled off
•Channel architecture
thus transferred to the
polymer
•PDMS technology is
becoming popular
Laser Photoablation
•High aspect ratio
channels achievable
•Laser pulses in the
UV region used
•Sealing by thermal
lamination with a
PET/PE film
at 1250C
•Depth controllable
References
http://www.kuos.org/archives/MEMS%20Short%20Course.p
df
http://mems.colorado.edu/c1.res.ppt/ppt/g.tutorial/ppt.htm
http://mems.cwru.edu/shortcourse/
http://www2.ece.jhu.edu/faculty/andreou/495/2003/LectureNotes/Handout3a_Ph
otolithographyI.pdf
http://www.memsnet.org
Applications
WP
I’s
Nitric O
xid
e
Nanosensor
Nitric Oxide Sensor
•D
evel
oped
at
Dr.
Thak
or’
sL
ab, B
ME
, JH
U
•E
lect
roch
emic
al d
etec
tion o
f N
O
Left: Schematic of the 16-electrode sensor array. Right: Close-up of a
single site. The underlying metal is Au and appears reddish under the
photoresist. The dark layer is C (300µm-x-300µm)
Cartoon of the fabrication sequence for the NO sensor array
A) Bare 4”Siwafer B) 5µm of photoresist was spin-coated on to the surface, followed by a
pre-bake for 1min at 90°C. C) The samples were then exposed through a mask for 16s using
UV light at 365nm and an intensity of 15mW/cm2. D) Patterned photoresist after development.
E) 20nm of Ti, 150nm of Au and 50nm of C were evaporated on. F) The metal on the
unexposed areas was removed by incubation in an acetone bath. G)A 2nd layer of photoresist,
which serves as the insulation layer, was spun on and patterned.H) The windows in the
second layer also defined the microelectrode sites.
A B C DHGFE
NO
Sensor
Calibra
tion
NO
Sensor
Calibra
tion
Multic
hannelN
O
Record
ings
Mic
hig
an P
robes for
Neura
l
Record
ings
Neura
l R
ecord
ing
Mic
roele
ctr
odes
Ref
eren
ce :
htt
p:/
/ww
w.a
creo
.se/
acre
o-r
d/I
MA
GE
S/P
UB
LIC
AT
ION
S/P
RO
CE
ED
ING
S/A
BS
TR
AC
T-
KIN
DL
UN
DH
.PD
F
Multi-ele
ctr
ode N
eura
l
Record
ing
Ref
eren
ce :
htt
p:/
/ww
w.n
ott
ing
ham
.ac.
uk
/neu
ron
al-n
etw
ork
s/m
mep
.htm
Ref
eren
ce :
htt
p:/
/ww
w.c
yb
erk
inet
icsi
nc.
com
/tec
hn
olo
gy.h
tm
Intr
aocula
r S
tim
ula
tion
Ele
ctr
odes
Ref
eren
ce :
Lutz
Hes
se, T
ho
mas
Sch
anze
, M
arcu
s W
ilm
san
d M
arcu
s E
ger
, “I
mp
lan
tati
on
of
reti
na
stim
ula
tion
elec
trod
es a
nd
rec
ord
ing
of
elec
tric
al s
tim
ula
tio
n r
espon
ses
in t
he
vis
ual
co
rtex
of
the
cat”
, G
raef
e’s
Arc
h C
lin
Ex
p
Op
hth
alm
ol
(2000
) 23
8:8
40–
845