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TLH11479

LM747Dual

OperationalAmplifier

November 1994

LM747

Dual Operational AmplifierGeneral DescriptionThe LM747 is a general purpose dual operational amplifierThe two amplifiers share a common bias network and powersupply leads Otherwise their operation is completely inde-

pendent

Additional features of the LM747 are no latch-up when in-put common mode range is exceeded freedom from oscilla-

tions and package flexibility

The LM747CLM747E is identical to the LM747LM747Aexcept that the LM747CLM747E has its specifications

guaranteed over the temperature range from 0C to a70Cinstead of b55C to a125C

FeaturesY No frequency compensation requiredY Short-circuit protectionY Wide common-mode and differential voltage rangesY Low power consumptionY No latch-upY Balanced offset null

Connection Diagrams

Metal Can Package

TLH114794

Order Number LM747H

See NS Package Number H10C

Dual-In-Line Package

TLH114795

Order Number LM747CN or LM747EN

See NS Package Number N14A

VaA and VaB are internally connected

C1995 National Semiconductor Corporation RRD-B30M115Printed in U S A

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Absolute Maximum RatingsIf MilitaryAerospace specified devices are required

please contact the National Semiconductor Sales

OfficeDistributors for availability and specifications

Supply Voltage

LM747LM747A g22VLM747CLM747E g18V

Power Dissipation (Note 1) 800 mWDifferential Input Voltage g30V

Input Voltage (Note 2) g15V

Output Short-Circuit Duration Indefinite

Operating Temperature RangeLM747LM747A b55C to a125CLM747CLM747E 0C to a70C

Storage Temperature Range b65C to a150C

Lead Temperat ure ( Sol dering 10 sec) 300C

Electrical Characteristics (Note 3)

Parameter ConditionsLM747ALM747E LM747 LM747C

UnitsMin Typ Max Min Typ Max Min Typ Max

Input Offset Voltage TA e 25C

RS s 10 kX 10 50 20 60 mVRS s 50X 08 30

RS s 50X 40 mVRS s 10 kX 60 75

Average Input Offset 15mVC

Voltage Drift

Input Offset Voltage TA e 25C VS e g20V

g10 g15 g15 mVAdjustment Range

Input Offset Current TA e 25C 30 30 20 200 20 200 nA70 85 500 300

Average Input Offset05 nAC

Current Drift

Input Bias Current TA e 25C 30 80 80 500 80 500 nA

TAMINs TAs TAMAX 0210 15 08 mA

Input Resi st ance TA e 25C VS e g20V 10 60 03 20 03 20 MXVS e g20V 05

Input Voltage Range TA e 25C g12 g13 Vg12 g13 g12 g13

Large Signal TA e 25C RLt 2 kX

Voltage Gain VS e g20V VO e g15V 50 VmV

VS e g15V VO e g10V 50 200 20 200 VmVRL t 2 kX

VS e g20V VO e g15V 32 VmV

VS e g15V VO e g10V 25 15 VmV

VS e g5V VO e g2V 10 VmV

Output Voltage Swing VS e g20V

RL t 10 kX g16 VRL t 2 kX g15

VS e g15V

RL t 10 kX g12 g14 g12 g14 VRL t 2 kX g10 g13 g10 g13

Output Short TA e 25C 10 25 35 25 25 mACircuit Current 10 40

Common-Mode RS s 10 kX VCM e g12V 70 90 70 90 dBRejection Ratio

RS s 50 kX VCM e g12V 80 95

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Electrical Characteristics (Note 3) (Continued)

Parameter ConditionsLM747ALM747E LM747 LM747C

UnitsMin Typ Max Min Typ Max Min Typ Max

Supply Voltage VS e g20V to VS e g5V

Rejection Ratio RS s 50X 86 96 dBRS s 10 kX 77 96 77 96

Transient Response TA e 25C Unity GainRise Time 025 08 03 03 ms

Overshoot 60 20 5 5 %

Bandwidth (Note 4) TA e 25C 0437 15 MHz

Slew Rate TA e 25C Unity Gain 03 07 05 05 Vms

S up pl y C ur re nt Am p TA e 25C 25 17 28 17 28 mA

Power ConsumptionAmp TA e 25C

VS e g20V 80 150 mWVS e g15V 50 85 50 85

LM747A VS e g20V

TA e TAMIN 165 mWTA e TAMAX 135

LM747E VS e g20V 150

TA e TAMIN 150 mW

TA e TAMAX 150

LM747 VS e g15VTA e TAMIN 60 100 mWTA e TAMAX 45 75

Note 1 The maximum junction temperature of the LM747CLM747E is 100C For operating at elevated temperatures devies in the TO-5 package must bederated based on a thermal resistance of 150 CW junction to ambient or 45CW junction to case The thermal resistance of the dual-in-line package is 100 CW junction to ambient

Note 2 For supply voltages less than g15V the absolute maximum input voltage is equal to the supply voltage

Note 3 These specifications apply for g5V s VS s g20V and b55C s TA s 125C for the LM747A and 0C s TA s 70C for the LM747E unless otherwisespecified The LM747 and LM747C are specified for VS e g15V and b55C s TA s 125C and 0C s TA s 70C respectively unless otherwise specified

Note 4 Calculated value from 035Rise Time (ms)

Schematic Diagram (Each Amplifier)

TLH114791

Note Numbers in parentheses are pin numbers for amplifier B DIP only

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Typical Performance Characteristics

Temperature

Currents vs Ambient

Input Bias and Offset

vs Supply Voltage

DC Parameters

Ratio vs Frequency

Common Mode Rejection

vs Frequency

Output Voltage Swing

vs Load Resistance

Output Voltage Swing

Supply Voltage

Input Range vs

Output Swing and

vs Ambient Temperature

Normalized DC Parameters

Transient Response vs Ambi ent Temperature

Frequency Characteristics

vs Supply Voltage

Frequency Characteristics

vs Frequency

Output Resistance

Characteristics vs Frequency

Open Loop Transfer

TLH114792

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Typical Performance Characteristics (Continued)

vs Frequency

Input Capacitance

Input Resistance and

Various Bandwidths

Broadband Noise for

vs Frequency

and Current

Input Noise Voltage

Signal Pulse Response

Voltage Follower Large

TLH114793

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Physical Dimensions inches (millimeters)

Metal Can Package (H)

Order Number LM747H

NS Package Number H10C

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LM747DualOperatio

nalAmplifier

Physical Dimensions inches (millimeters) (Continued)

Dual-In-Line Package (N)

Order Number LM747CN or LM747EN

NS Package Number N14A

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