lubrication layer perturbations in chemical-mechanical polishing · lubrication layer perturbations...
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Lubrication Layer Perturbations inChemical-Mechanical Polishing
Dr. Len BoruckiCTO, Araca, Inc.
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Outline
• A quick tutorial on chemical-mechanical polishing (CMP).
• Elastohydrodynamic lubrication with a pure lubricant.
• Questions posed by the presence of slurry particles.
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Quick CMP Tutorial
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Wafer Planarization in Integrated Circuit Fabrication•Integrated circuits are made by deposition and modification of numerous material layers.•Photolithography, the main method of creating patterns, works best on flat surfaces.•Chemical-Mechanical Polishing (CMP) is currently the leading method for planarizing surfaces.
Schematic of an integrated circuitproduced without CMP
Schematic of an integrated circuitproduced with CMP
Peter Wolters
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Generic Rotary Polishing Tool
Platen
Polishing Pad
SlurryStream,Puddle
Wafer
Wafer CarrierConditioner
AMAT ReflexionCommercial tool
Bench top polisherStruers. Photo by Rob HightGeorgia Tech.
A rotating tool with adiamond-covered facemaintains pad surfaceroughness, counteractingabrasive wear, removingdebris, exposing newpad surface.
The wafer is heldupside down by arotating carrier.The wafer surfacereacts with chemicalsin the slurry and isabraded by slurryparticles. The padalso experiencesabrasive wear.
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Polishing PadsThe most commonlyused pad, IC-1000TM,(Rohm and Haas) isa closed cellpolyurethane foamwith a mean voiddiameter of about30 microns. Voidsoccupy about 35%of the volume andare not interconnectedexcept at the surface.
The pad is shownhere next to a scaleddrawing of a 100 µmwide, 2 µm deeptrench. The padsurface roughnessis large comparedwith typical waferfeatures.
Wafer Topography
Letitia Molina, Motorola
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C.Elmufdi et al., 2004 CAMP Symposium.
Polishing pads are soft compared with most of the materials they polish.
Copper: 110 GPa Silicon Dioxide: 43-77 GPa
The pad elastic modulus generally decreases with increasing temperatureand water content. A wide range is possible: ~100-550 MPa.
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Polishing Pad Surfaces
Kojima andNishiguchi,2003 CMP-MIC.
The pad surface is not static, but evolves under conditioning and abrasive wear.
Freshly conditioned After polishing without conditioning
Scott Lawing,Rohm and HaasECS 2003
This shows thatthere is pad/wafercontact. The wearrate varies withthe abrasive type.Spherical particlesproduce less wear,irregular particlesmore wear.
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Slurry ParticlesSlurry particles are very much smaller than pad asperities. Typical mean diameters forspherical colloidal particles range from a few tens to a few hundreds of nanometers.Solid loadings vary from ~0.3% to ~30% by weight. Slurry viscosity is similar to water.
S. Lawing, ECS 2003
We’ll assume spherical colloidal particles
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Polishing Mechanisms (SiO2)
Hypothesizedmechanism forSiO2 removalby ceria. Mostremoved silica isfound on the slurryparticles andin colloidalsuspension.(W. America,CAMP 2003).
Particle surfacechemistry matters
Polishing pad
Wafer (held upside down by carrier)Chemically-softened layer with surface charge.Reactive fluid and charged slurry particles(Particle size greatly exaggerated)
Pressure p
Relative sliding velocity V
Chemicalreaction/softeningand mechanicalremoval.
- - - - - - - - - - - - - - - - - - - -+
+
+ + +
++ + +
++
+ + ++
++
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Pad
Wafer
Pad asperitiesand fluidthickness –tens of microns
...
.. .
.... . ..
Slurry particlestens-hundredsof nm.
Nominal pressure p=7 - 49 kPa (1-7 PSI)Relative sliding speed ~1 m/sec
Summary of Scales and Numerical Values
≈
1 GPa
E 100-500 MPa
≈E
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Elastohydrodynamic Lubrication (EHL)
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Dry Contact
Hertzian Theory
o Undeformed asperity tips arespherical.
o Contact area is circular.
o Pressure is elliptic.2/12
0 ))/(1( arpp −=
δππ RaA == 2
++
K.L. Johnson, Contact Mechanics
δ
R
2a
2/12/10 )1(
2 δπν REp
−=
Asperity tip
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WaferEHL Theory
o A thin lubrication layer forms.
o Hydrodynamic pressures deformasperity tips.
o Positive hydrodynamic pressures inthe lubrication layer support the load.
Asperity
V
Lubricated Contact
LubricationLayer
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EHL TheoriesElastohydrodynamic lubrication has been studied for almost a century. Some early citationsfrom Szeri, Fluid Film Lubrication, Theory and Design, Cambridge (1998) Ch. 8:
1916 H.M. Martin Assumed rigid bodies. Predicted thinner lubrication layer than observed.1936 W. Peppler Allowed contacts to deform elastically.1945 Gatcombe Generalized to pressure-dependent viscosity, µ=µ(p)1949 A.N. Grubin First satisfactory solution accounting for elastic deformation and µ=µ(p).
Reynolds equationV
Elasticity theory
http://www.lsbu.ac.uk/water/explan2.html
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V
Fluid Pressure
Asperity deformation
Hertz theory
From Szeri, Fluid Film Lubrication, Cambridge University Press, 1998
Fluid pressures are approximatelythe same as Hertzian pressuresexcept for a pressure spike near thetrailing edge. Disagreement becomesmore pronounced at lower loads.
The lubrication layer is nearlyuniform in thickness except fora constriction at the trailing edgethat produces the pressurespike.
EHL Theory Example (Roller)
V
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EHL Compact FormulasSimple formulas are often available for estimating the average lubricationlayer thickness. Some fitting to more complex solutions is involved.
Pad Asperity
hmin hc
22.042.08.064.0)(5.1 −−= avgc pERVh µ
cavg Npp /=
∫∞
=d ssc dzzN )(φη
ηs = summit area densityφs = summit height PDF.
ηs =2x108/m2
φs Gaussian with σ=6µmR=50µmp=1 kPa
V=1 m/secµ=2.5x10-3 Pa-sec
hc=29 nmabout the same as the mean diameterof some types of slurry particles.
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Slurry Particles
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Active ParticlesPolish rates are generally low for slurries that do not contain particles. When particles areadded, some are evidently trapped between the wafer and pad asperities and increase theremoval rate by mechanical or chemical means. These are active particles. Experimentalestimates of slurry residence time and utilization suggest that most particles never becomeactive.
Active
Inactive
Some active particlesalso abrade the pad.
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0
500
1000
1500
2000
2500
0 5 10 15 20 25 30 35
Concentration (wt.%)
MR
R (Ă
/min
)50nm
80nm
140nm
Removal Rate and Solids LoadingRemoval rate increases with weight fraction for particles of a given size.
C. Zhou et al., STLE 2002
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Removal Rate and Particle Size
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
0 50 100 150
Abrasive Size (nm)
MR
R (Ă
/min
)
18 kPa, 0.4 m/s
32 kPa, 0.6 m/s
45 kPa, 0.9 m/s
C. Zhou et al., STLE 2002
At a fixed weight fraction, the removal rate has a peak at a size comparable toa possible lubrication layer thickness.
30 wt% In this figure,the number ofabrasive particlesdecreases asthe size increases.
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Questions
Slurry particle diameter
Smallparticle
Which portion of the particledistribution becomes active?
If we start out with no particlesin the lubrication layer, then howfast do they accumulate?
How much does the accumulation ofa few particles affect the probabilityof capture of additional particles?
MediumLargeactive?
activenotactive
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Questions
What happens to the thicknessand shape of the lubricationlayer as the solids loadingincreases from zero to typicalupper weight fraction limits?
Are hydrodynamic pressuresthe main determinant of thelayer geometry or is therea point at which particle sizeand loading are the main factors?
Can the compact models oflubrication layer thicknessbe generalized to includeslurry particles?
No solids
High solids loading
?
These are the main questions that I would like to address.
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I have with me …1. A 2D finite element Reynolds
equation solver.2. A 2D/3D linear elasticity solver.3. Some literature.
Fluid pressures fromthe Reynolds solver