making semiconductors magnetic: new materials properties, devices, and future
DESCRIPTION
NRI SWAN. Making semiconductors magnetic: new materials properties, devices, and future. JAIRO SINOVA Texas A&M University Institute of Physics ASCR. Hitachi Cambridge Jorg Wunderlich , A. Irvine, et al. Institute of Physics ASCR Tomas Jungwirth , Vít Novák, et al. - PowerPoint PPT PresentationTRANSCRIPT
Making semiconductors magnetic:
new materials properties, devices, and future
NRISWAN
JAIRO SINOVATexas A&M University
Institute of Physics ASCR
Hitachi CambridgeJorg Wunderlich, A. Irvine, et al
Institute of Physics ASCRTomas Jungwirth, Vít Novák, et al
Texas A&M L. Zarbo
University of Nottingham Bryan Gallagher, Tom Foxon, Richard Campion, et al.
215th ECS Meeting - San Francisco, CA May 27th 2009
OUTLINE
• Motivation• Ferromagnetic semiconductor materials:
– (Ga,Mn)As - general picture– Growth, physical limits on Tc – Related FS materials (searching for room temperature)– Understanding critical behavior in transport
• Ferromagnetic semiconductors & spintronics– Tunneling anisotropic magnetoresistive device– Transistors (4 types)
1.Create a material that marriages the tunability of semiconductors and the collective behavior of ferromagnets; once created search for room temperature systems
2.Study new effects in this new material and utilize in metal-based spintronics
3.Develop a three-terminal gated spintronic device to progress from sensors & memories to transistors & logic
Ferromagnetic semiconductor research :
Motivations and strategies
(Ga,Mn)As GENERAL PICTURE
Ferromagnetic semiconductors
GaAs - standard III-V semiconductor
Group-II Mn - dilute magnetic moments & holes
(Ga,Mn)As - ferromagnetic semiconductor
Need true FSs not FM inclusions in SCs
Mn
Ga
AsMn
+
Mn
Ga
As
What happens when a Mn is placed in Ga sites:Mn–hole spin-spin interaction
hybridization
Hybridization like-spin level repulsion Jpd SMn shole interaction
Mn-d
As-p
In addition to the Kinetic-exchange coupling, for a single Mn ion, the coulomb interaction gives a trapped hole (polaron) which resides just above the valence band
5 d-electrons with L=0 S=5/2 local moment
intermediate acceptor (110 meV) hole
Mn
Ga
AsMn
EF
DO
S
Energy
spin
spin
Transition to a ferromagnet when Mn concentration increasesGaAs:Mn – extrinsic p-type semiconductor
FM due to p-d hybridization (Zener local-itinerant kinetic-exchange)
valence band As-p-like holes
As-p-like holes localized on Mn acceptors
<< 1% Mn ~1% Mn >2% Mn
onset of ferromagnetism near MIT
Mn
Ga
As
Mn
Ga
AsMn
•Low-T MBE to avoid precipitation
•High enough T to maintain 2D growth
need to optimize T & stoichiometry for each Mn-doping
•Inevitable formation of interstitial Mn-double-donors compensating holes and moments need to anneal out but without loosing MnGa
high-T growth
optimal-T growth
(Ga,Mn)As GROWTH
Interstitial Mn out-diffusion limited by surface-oxide
GaMnAs
GaMnAs-oxide
Polyscrystalline20% shorter bonds
MnI++
O
Optimizing annealing-T another key factorRushforth et al, ‘08
x-ray photoemission
Olejnik et al, ‘08
10x shorther annealing with etch
Tc LIMITS AND STRATEGIES
0 1 2 3 4 5 6 7 8 9 100
20
40
60
80
100
120
140
160
180
TC(K
)
Mntotal
(%)
“... Ohno’s ‘98 Tc=110 K is the fundamental upper limit ..” Yu et al. ‘03
“…Tc =150-165 K independent of xMn>10% contradicting Zener kinetic exchange ...” Mack et al. ‘08
“Combinatorial” approach to growthwith fixed growth and annealing T’s
Tc limit in (Ga,Mn)As remains open
2008Olejnik et al
188K!!
Can we have high Tc in Diluted Magnetic Semicondcutors?
Tc linear in MnGa local (uncompensated) moment concentration; falls rapidly with decreasing hole density in heavily compensated samples.
Define Mneff = Mnsub-MnInt
NO IDENTIFICATION OF AN INTRINSIC LIMITNO EXTRINSIC LIMIT
(lines – theory, Masek et al 05)
Relative Mn concentrations obtained through hole density measurements and saturation moment densities measurements.
Qualitative consistent picture within LDA, TB, and k.p
0 1 2 3 4 5 6 7 8 9 100
20
40
60
80
100
120
140
160
180
TC(K
)
Mntotal
(%)
8% Mn
Open symbols as grown. Closed symbols annealed
0 1 2 3 4 5 6 70
20
40
60
80
100
120
140
160
180
TC(K
)
Mneff
(%)
Tc as grown and annealed samples
● Concentration of uncompensated MnGa moments has to reach ~10%. Only 6.2% in the current record Tc=173K sample
● Charge compensation not so important unless > 40%
● No indication from theory or experiment that the problem is other than technological - better control of growth-T, stoichiometry
How well do we understand (Ga,Mn)As?
In the metallic optimally doped regime GaMnAs is well described by a disordered-valence band picture: both dc-data and ac-data are consistent with this scenario.
The effective Hamiltonian (MF) and weak scattering theory (no free parameters) describe (III,Mn)V metallic DMSs very well in the optimally annealed regime:• Ferromagnetic transition temperatures
Magneto-crystalline anisotropy and coercively Domain structure Anisotropic magneto-resistance Anomalous Hall effect MO in the visible range Non-Drude peak in longitudinal ac-conductivity • Ferromagnetic resonance • Domain wall resistance • TAMR •Transport critical behaviour
TB+CPA and LDA+U/SIC-LSDA calculations describe well chemical trends, impurity formation energies, lattice constant variations upon doping
III = I + II Ga = Li + Zn
GaAs and LiZnAs are twin SC
Masek, et al. PRB (2006)
LDA+U says that Mn-doped are also twin DMSs
n and p type doping through Li/Zn stoichiometry
No solubility limit for group-II Mn
substituting for group-II Zn !!!!
UNDERSTANDING CRITICAL
BEHAVIOUR IN TRANSPORT
Solving a puzzle in (Ga,Mn)As: FM & transport
Dense-moment MSF<< d-
Eu - chalcogenides
Dilute-moment MSF~ d-
Critical contribution to resistivity at Tc
~ magnetic susceptibilityBroad peak near Tc disappeares with annealing (higher uniformity)???
~)0~~( Fkk
smalluncor Tc
EuCdSe
When density of carriers is smaller than density of local moments what matters is the long range behavior of Γ (which goes as susceptibility)
)/1~~( dkk F
vcdTddTd ~/~/
When density of carriers is similar to density of local moments what matters is the short range behavior of Γ (which goes as the energy)
Ni
Tc
Optimized materials with x=4-12.5% and Tc=80-185K
Remarkably universal both below and above Tc
Annealing sequence
d/dT singularity at Tc – consistent with kF~d-
V. Novak, et al “Singularity in temperature derivative of resistivity in (Ga,Mn)As at the Curie point”, Phys. Rev. Lett. 101, 077201 (2008).
OUTLINE
• Motivation• Ferromagnetic semiconductor materials:
– (Ga,Mn)As - general picture– Growth, physical limits on Tc – Related FS materials (searching for room temperature)– Understanding critical behavior in transport
• Ferromagnetic semiconductors & spintronics– Tunneling anisotropic magnetoresistive device– Transistors (4 types)
AMRAMR~ 1% MR effect~ 1% MR effect
TMRTMR~ 100% MR effect~ 100% MR effect
TAMRTAMR
) vs.( ~ IMvgExchange split & SO-coupled bands:
Exchange split bands:
)()(~ TDOSTDOS
)(~ MTDOS
Au
discovered in (Ga,Mn)As Gold et al. PRL’04
ab intio theory Shick, et al, PRB '06, Park, et al, PRL '08
TAMR in metal structures
experiment Park, et al, PRL '08
Also studied by Parkin et al., Weiss et al., etc.
DMS DEVICES
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
2
4
6
8
10
0V 3V 5V 10V
carr
ier
dens
ity
[ 10
19 c
m-3
]
GaMnAs layer thickness [nm]
Gating of highly doped (Ga,Mn)As: p-n junction FET
p-n junction depletion estimates
Olejnik et al., ‘08
~25% depletion feasible at low voltages
(Ga,Mn)As/AlOx FET with large gate voltages, Chiba et al. ‘06
20 22 24 26 28 30 32 34
18.6
18.8
19.0
19.2
19.4
[10
-3c
m]
T [K]
Vg = 0V
22.5
23.0
23.5
24.0
24.5 Vg = 3V
20 22 24 26 28 30 32 34
-200
-100
0
100
d/d
T [1
0-6
T [K]
-300
-200
-100
0
AM
RIncreasing and decreasing AMR and Tc with depletion
Tc Tc
30 40 50 60 70 80 90 100
100
200
65K62K
dR/d
T
T (K)
depletion accumulation
Persistent variations of magnetic properties with ferroelectric
gates
Stolichnov et al., Nat. Mat.‘08
exy = 0.1%
exy = 0%
Electro-mechanical gating with piezo-stressors
Rushforth et al., ‘08
Strain & SO
Electrically controlled magnetic anisotropies via strain
Single-electron transistor
Two "gates": electric and magnetic
(Ga,Mn)As spintronic single-electron transistor
Huge, gatable, and hysteretic MR
Wunderlich et al. PRL ‘06
GMMGG C
C
e
MVMVVCQ
C
QQU
)(&)]([&
2
)(0
20
electric && magneticmagneticcontrol of Coulomb blockade oscillations
n-1 n n+1 n+2n-1 n n+1 n+2
EC
QQindind = = nnee
QQindind = (= (n+1/2)n+1/2)eeQ0
Q0
e2/2C
Q
D e
MQQVdQU
0
'' )()(
[010]
M[110]
[100]
[110][010]
SO-coupling (M)
Source Drain
GateVG
VDQ
Single-electron charging energy controlled by Vg and M
Theory confirms chemical potential anisotropies in (Ga,Mn)As& predicts CBAMR in SO-coupled room-Tc metal FMs
Variant p- or n-type FET-like transistor in one single nano-sized CBAMR device
0
ONONOFFOFF
1
0
ONON OFFOFF
1
VDD
VA VB
VA
VB
Vout
0
0
0
OFFOFFONON
ONON
OFFOFF
0
0
1
1
ONONOFFOFF
A B Vout0 0 01 0 10 1 11 1 1
0
01
ONON
OFFOFF
0
0
OFFOFF
1
ONON
1
1
1
1
OFFOFF
ONON
1
1
ONON
OFFOFF
1
“OR”
Nonvolatile programmable logic
VDD
VA VB
VA
VB
Vout
Variant p- or n-type FET-like transistor in one single nano-sized CBAMR device
0
ONONOFFOFF
1
0
ONON OFFOFF
1
A B Vout0 0 01 0 10 1 11 1 1
“OR”
Nonvolatile programmable logic
Physics of SO & exchange
SET
Resistor
Tunneling device
Chemical potential CBAMR
Tunneling DOS TAMR
Group velocity & lifetime AMR
Device design
Materials
metal FMs
FSs
FSs and metal FS with strong SO
Allan MacDonald U of Texas
Tomas JungwirthInst. of Phys. ASCRU. of Nottingham
Joerg WunderlichCambridge-Hitachi
Laurens MolenkampWuerzburg
Mario BorundaTexas A&M U.
Other collaborators: Bernd Kästner, Satofumi Souma, Liviu Zarbo, Dimitri Culcer , Qian Niu, S-Q Shen, Brian Gallagher, Tom Fox, Richard
Campton
Alexey KovalevTexas A&M U.
Liviu ZarboTexas A&M U.
Matching TAMU funds
Xin LiuTexas A&M U.
Bryan GallagherU. Of Nottingham
33
EXTRAS
AMR nature of the effect
normal AMR Coulomb blockade AMR
•CBAMR if change of |CBAMR if change of |((MM)| ~ )| ~ ee22//22CC
•In our (Ga,Mn)As ~ meV (~ 10 In our (Ga,Mn)As ~ meV (~ 10 Kelvin)Kelvin)
•In room-T ferromagnet change of |In room-T ferromagnet change of |((MM)|~100K )|~100K
•Room-T conventional SET (e2/2C >300K) possible
Theory confirms chemical potential anisotropies in (Ga,Mn)As& predicts CBAMR in SO-coupled room-Tc metal FMs
As-p-like holes
Strong exchange splitting & SO coupling in (Ga,Mn)As
Standard MBE techniques for high-quality tunneling structures
MnGa
As
Mn