maps for particles physics christine hu-guo (iphc) phase1 – star iphc

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MAPS for Particles Physics Christine Hu-Guo (IPHC) PHASE1 – STAR IPHC

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Page 1: MAPS for Particles Physics Christine Hu-Guo (IPHC) PHASE1 – STAR IPHC

MAPS for Particles PhysicsChristine Hu-Guo (IPHC)

PHA

SE1

– ST

AR

IPH

C

Page 2: MAPS for Particles Physics Christine Hu-Guo (IPHC) PHASE1 – STAR IPHC

IPHC [email protected] 2October 2010 USTC

Trends for Pixel Sensor Development

CCD (Charge Coupled Device)

Hybrid Pixel Detector

Future subatomic physics experiments need detectors beyond the state of the art

MAPS provide an attractive trade-off between granularity, material budget, readout speed, radiation tolerance and power dissipation

Power consumptionLimited for all experiments

3DIT High resistivity EPI

2D & 3D MAPS

MAPS Developm

ent Trend

3T pixel Analogue RO MAPS

Digital RO MAPS

Page 3: MAPS for Particles Physics Christine Hu-Guo (IPHC) PHASE1 – STAR IPHC

IPHC [email protected] 3October 2010 USTC

Development of MAPS for Charged Particle Tracking

In 1999, the IPHC CMOS sensor group proposed the first CMOS pixel sensor (MAPS) for future vertex detectors (ILC)

Numerous other applications of MAPS have emerged since then ~10-15 HEP groups in the USA & Europe are presently active in MAPS R&D

Original aspect: integrated sensitive volume (EPI layer) and front-end readout electronics on the same substrate

Charge created in EPI, excess carriers propagate thermally, collected by NWELL/PEPI , with help of reflection on boundaries with P-well and substrate (high doping)

Q = 80 e-h / µm signal < 1000 e- Compact, flexible EPI layer ~10–15 µm thick

thinning to ~30–40 µm permitted Standard fabrication technology

Cheap, fast turn-around Room temperature operation

Attractive balance between granularity, material budget, radiation tolerance, read out speed and power dissipation

BUT Very thin sensitive volume impact on signal magnitude (mV!) Sensitive volume almost un-depleted impact on radiation tolerance & speed Commercial fabrication (parameters) impact on sensing performances & radiation tolerance NWELL used for charge collection restricted use of PMOS transistors

IPHC-DUT [email protected] 714-18/01/2008

iPHC

Metal layers

Polysilicon

P-Well N-Well P-Well

N+ N+ P+ N+

Dielectric for insulation and passivation

Charged particles

100% efficiency.

Radiation

--

--

--

- ++

+++

++

- +- +- +

P-substrate (~100s m thick)

P-epitaxial layer(up to to 20 m thick)

Potential barriers

epi

sub

N

Nln

q

kTV

R.T.

Page 4: MAPS for Particles Physics Christine Hu-Guo (IPHC) PHASE1 – STAR IPHC

IPHC [email protected] 4October 2010 USTC

Achieved Performances with Analogue Readout MAPS provide excellent tracking performances

Detection efficiency ~100% ENC ~10-15 e- S/N > 20-30 (MPV) at room temperature

Single point resolution ~ µm, a function of pixel pitch ~ 1 µm (10 µm pitch), ~ 3 µm (40 µm pitch)

MAPS: Final chips: MIMOTEL (2006): ~66 mm², 65k pixels, 30 µm pitch

EUDET Beam Telescope (BT) demonstrator MIMOSA18 (2006): ~37 mm², 262k pixels, 10 µm pitch

High resolution EUDET BT demonstrator MIMOSTAR (2006): ~2 cm², 204k pixels, 30 µm pitch

Test sensor for STAR Vx detector upgrade LUSIPHER (2007): ~40 mm², 320k pixels, 10 µm pitch

Electron-Bombarded CMOS for photon and radiation imaging detectors

MIMOSTARChip dimension: ~2 cm²

MIMOTEL

M18

LUSIPHER

Page 5: MAPS for Particles Physics Christine Hu-Guo (IPHC) PHASE1 – STAR IPHC

IPHC [email protected] 5October 2010 USTC

Radiation tolerance (preliminary)

Ionising radiation tolerance: O(1 M Rad) (MIMOSA15, test cond. 5 GeV e-, T = -20°C, tint~180 µs)

tint << 1 ms, crucial at room temperature

Non ionising radiation tolerance: depends on pixel pitch: 20 µm pitch: 2x1012 neq /cm2 , (Mimosa15, tested on DESY e- beams, T = - 20°C, tint ~700 μs)

5.8·1012neq/cm² values derived with standard and with soft cuts

10 µm pitch: 1013 neq /cm2 , (MIMOSA18, tested at CERN-SPS , T = - 20°C, t int ~ 3 ms)

parasitic 1–2 kGy gas N ↑

Further studies needed : Tolerance vs diode size, Readout speed, Digital output, ... , Annealing ??

Integ. Dose Noise S/N (MPV) Detection Efficiency

0 9.0 ± 1.1 27.8 ± 0.5 100 %

1 Mrad 10.7 ± 0.9 19.5 ± 0.2 99.96 % ± 0.04 %

Fluence (1012neq/cm²)

0 0.47 2.1 5.8 (5/2) 5.8 (4/2)

S/N (MPV) 27.8 ± 0.5 21.8 ± 0.5 14.7 ± 0.3 8.7 ± 2. 7.5 ± 2.

Det. Efficiency (%) 100. 99.9 ± 0.1 99.3 ± 0.2 77. ± 2. 84. ± 2.

Fluence (1012neq/cm²)

0 6 10

Q cluster (e-) 1026 680 560

S/N (MPV) 28.5 ± 0.2 20.4 ± 0.2 14.7 ± 0.2

Det. Efficiency (%) 99.93 ± 0.03 99.85 ± 0.05 99.5 ± 0.1

Page 6: MAPS for Particles Physics Christine Hu-Guo (IPHC) PHASE1 – STAR IPHC

IPHC [email protected] 6October 2010 USTC

System integration

Industrial thinning (via STAR collaboration at LBNL) ~50 µm, expected to ~30-40 µm

Ex. MIMOSA18 (5.5×5.5 mm² thinned to 50 μm)

Development of ladder equipped with MIMOSA chips (coll. with LBNL) STAR ladder (~< 0.3 % X0 ) ILC (<0.2 % X0 )

Edgeless dicing / stitching alleviate material budget of flex cableIRFU - IPHC [email protected] 718-21/05/2009 FEE09

0.282Total

0.11CF / RVC carrier

0.0143Adhesive

0.090Cable assembly

0.0143Adhesive

0.0534MIMOSA detector

% radiation length

PIXEL Ladder

40 LVDS Sensor output pairs clock, control, JTAG, power,ground.

10 MAPS Detectors

low mass / stiffnesscables

to motherboard

LVDS drivers

Now 0.37 % Xo

Page 7: MAPS for Particles Physics Christine Hu-Guo (IPHC) PHASE1 – STAR IPHC

IPHC [email protected] 7October 2010 USTC

Analogue Readout Sensors Digital Readout Sensors

Analogue readout sensors : excellent performance

BUT: moderate readout speed for larger sensors with smaller pitch!

For many applications: high granularity and fast readout required simultaneously

Integrating signal processing: ADC, Data sparsification, …

Digital Readout Sensors

R&D on high readout speed, low noise, low power dissipation, highly

integrated signal processing architecture with radiation tolerance

Page 8: MAPS for Particles Physics Christine Hu-Guo (IPHC) PHASE1 – STAR IPHC

IPHC [email protected] 8October 2010 USTC

Development of CMOS Pixel Sensors for Charged Particle Tracking

Design according to 3 issues: Increasing S/N at pixel-level A to D Conversion at column-level Zero suppression at chip edge level

Power v.s. speed: Power Readout in a rolling shutter mode

Speed 1 row pixels are read out //

MIMOSA26 is a reticule size MAPS with binary output, 10 k images / s

Pixel array: 1152 x 576, 18.4 µm pitch Hit density: ~ 106 particles/cm²/s Architecture:

Pixel (Amp+CDS) array organised in // columns r.o.in the rolling shutter mode

1152 ADC, a 1-bit ADC (discriminator) / column Integrated zero suppression logic Remote and programmable 21.5 mm

13.7

mm

MIMOSA26Active area: ~10.6 x 21.2 mm2

Pixel Array

Rolling shutter mode

ADC

Zero suppression

Page 9: MAPS for Particles Physics Christine Hu-Guo (IPHC) PHASE1 – STAR IPHC

IPHC [email protected] 9October 2010 USTC

MIMOSA26: 1st MAPS with Integrated Ø

Pixel array: 576 x 1152, pitch: 18.4 µm Active area: ~10.6 x 21.2 mm2

In each pixel: Amplification CDS (Correlated Double Sampling)

1152 column-level discriminators offset compensated high

gain preamplifier followedby latch

Zero suppression logic

Memory management Memory IP blocks

Readout controller JTAG controller

Current Ref. Bias DACs

Row sequencer Width: ~350 µm

I/O PadsPower supply PadsCircuit control PadsLVDS Tx & Rx

CMOS 0.35 µm OPTO technology, Chip size : 13.7 x 21.5 mm2

Testability: several test points implemented all along readout path

Pixels out (analogue) Discriminators Zero suppression Signal transmission

Reference Voltages Buffering for 1152 discriminators

PLL, 8b/10b optional

Integration time: ~ 100 µs R.O. speed: 10 k frames/s Hit density: ~ 106

particles/cm²/s

Page 10: MAPS for Particles Physics Christine Hu-Guo (IPHC) PHASE1 – STAR IPHC

IPHC [email protected] 10October 2010 USTC

Radiation Tolerance Improvement

Non ionising radiation toleranceHigh resistivity sensitive volume faster charge collection

Exploration of a VDSM technology with depleted (partially ~30 µm) substrate: Project "LePix" driven by CERN for SLHC trackers (attractive for CBM, ILC and CLIC Vx Det.)

Exploration of a technology with high resistivity thin epitaxial layer XFAB 0.6 µm techno: ~15 µm EPI ( ~ O(103).cm), Vdd = 5 V (MIMOSA25)

Benefit from the need of industry for improvement of the photo-sensing elements embedded into CMOS chip

For comparison: standard CMOS technology, low resistivity P-epi

high resistivity P-epi: size of depletion zone size is comparable to the P-epi thickness!

TCAD Simulation15 µm high resistivity (1000 Ω . cm) EPI compared to 15 µm standard EPI (10 Ω . cm)

Page 11: MAPS for Particles Physics Christine Hu-Guo (IPHC) PHASE1 – STAR IPHC

IPHC [email protected] 11October 2010 USTC

Landau MP (in electrons) versus cluster sizeLandau MP (in electrons) versus cluster size0 neq/cm²

0.3 x 1013 neq/cm²

1.3 x 1013 neq/cm²

3 x 1013 neq/cm²

MIMOSA25 in a high resistivity epitaxial layer

20 μm pitch, + 20°C, self-bias diode @ 4.5 V, 160 μs read-out time Fluence ~ (0.3 / 1.3 / 3·)1013 neq/cm2 Tolerance improved by > 2 order of mag. Need to confirm det (uniformity !) with beam tests

16x9

6

Pit

ch 2

0µm

MIMOSA25

To compare: «standard» non-depleted EPI substrate: MIMOSA15 Pitch=20µm, before and after 5.8x1012 neq/cm2

saturation -> >90 % of charge is collected is 3 pixels -> very low charge spread for depleted substrate

EPI: (1000 Ω . Cm)

Page 12: MAPS for Particles Physics Christine Hu-Guo (IPHC) PHASE1 – STAR IPHC

IPHC [email protected] 12October 2010 USTC

MIMOSA26 Test Results

Laboratory tests: ENC ~ 11-13 e-

Signal to noise ratio for the seed pixel before irradiation and after exposure to a fluence of 6 x 1012 neq / cm²

0.64 mV0.31 mV

~ 76 %~ 57 %~ 22 %20 µm

~ 91 %~ 78 %~ 31 %15 µm

~ 95 %~ 85 %~ 36 %10 µm

~ 71 %~ 54 %~21%

3x32x2seedEPI thickness

3x32x2Seed

CCE (55Fe source)

High resistivity (~400 .cm)Standard (~10 .cm) 14 µmEPI layer

(a)

EPI thick

10.7

After 6x1012 neq/cm²Before irradiation

--------

28

22

After 6x1012 neq/cm²Before irradiation

~ 3620 µm

~ 4115 µm

~ 3510 µm~ 20

(230 e-/11.6 e-)

S/N at seed pixel

(106Ru source)

High resistivity (~400 .cm)Standard (~10 .cm) 14 µmEPI layer

(b)

Page 13: MAPS for Particles Physics Christine Hu-Guo (IPHC) PHASE1 – STAR IPHC

IPHC [email protected] 13October 2010 USTC

High-Resistivity CMOS Pixel Sensors Preliminary conclusions:

Detection efficiency ~100% (SNR ~40) for very low fake rate: Plateau until fake rate of few 10-6

Single point resolution <~4 µm Detection efficiency ~100% after exposure to fluence of 1x1013 neq/cm²

Excellent detection performances with high-resistivity epitaxial layer despite moderate resistivity (400 Ω.cm) and poor depletion voltage (<1V)

Tolerance to >~ O(1014) neq/cm² seems within reach (study under way)

MIMOSA26: design base line for STAR Vx upgrade, CBM MVD. Its performances are close to the ILD vertex detector specifications

Page 14: MAPS for Particles Physics Christine Hu-Guo (IPHC) PHASE1 – STAR IPHC

IPHC [email protected] 14October 2010 USTC

Summary of MIMOSA26 Main Characteristics

More than 80 sensors tested Yield ~90%

(75% fully functional sensors thinned to 120 µm + 15% (showing one bad row or column)

Thinning yield to 50 µm ~90%

Readout time tr.o.~100 µs (10 4 frames/s) suited to > 10 6 particules/cm²/s

Detection efficiency ~100% (S/N ~ 40) for very low fake rate Plateau until fake rate of few 10-6

Single point resolution <~ 4 µm

Detection efficiency still ~100% after exposure to: Fluence of 1x1013 neq / cm²

Tolerance to >~O(1014) neq /cm² seems within reach (study under way)

TID: ~ several 10² KRad at room temperature

Expected to reach ~O(1) MRad tolerance at negative temperature

Page 15: MAPS for Particles Physics Christine Hu-Guo (IPHC) PHASE1 – STAR IPHC

IPHC [email protected] 15October 2010 USTC

STAR Heavy Flavor Tracker (HFT) Upgrade

Physics Goals: Identification of mid rapidity Charm and Beauty mesons and

baryons through direct reconstruction and measurement of the displaced vertex with excellent pointing resolution

TPC – Time Projection Chamber (main detector in STAR)

HFT – Heavy Flavor Tracker

SSD – Silicon Strip Detector

IST – Inner Silicon Tracker

PXL – Pixel Detector (PIXEL)

Goal: Increasing pointing resolution from the outside in

TPC SSD IST PXL~1 mm ~300 µm ~250 µm

vertex<30 µm

co

urt

esy

of

M.

Sze

lezn

iak

/ V

ert

ex-

20

10

Page 16: MAPS for Particles Physics Christine Hu-Guo (IPHC) PHASE1 – STAR IPHC

IPHC [email protected] 16October 2010 USTC

STAR PIXEL Detector

~20 cm

Cantilevere

d support

One of two half c

ylinders

RO buffers

/ driv

ers

Total: 40 laddersLadder = 10 MAPS sensors (~2x2 cm² each)

Detector e

xtractio

n at one end of t

he cone

Sensors Requirements Multiple scattering minimisation:

Sensors thinned to 50 um, mounted on a flex kapton/aluminum cable

X/X0 = 0.37% per layer

Sufficient resolution to resolve the secondary decay vertices from the primary vertex

< 10 um

Luminosity = 8 x 1027 / cm² / s at RHIC_II ~200-300 (600) hits / sensor (~4 cm2) in the

integration time window Shot integration time ~< 200 µs

Low mass in the sensitive area of the detector airflow based system cooling

Work at ambient (~ 35 °C ) temperature Power consumption ~ 100 mW / cm²

Sensors positioned close (2.5 - 8 cm radii) to the interaction region

~ 150 kRad / year few 1012 Neq / cm² / year

2.5 cm Inner layer

8 cm radius Outer layer

End view

Centre of the

beam pipe

courtesy of M. Szelezniak / Vertex-2010

Page 17: MAPS for Particles Physics Christine Hu-Guo (IPHC) PHASE1 – STAR IPHC

IPHC [email protected] 17October 2010 USTC

STAR PIXEL Detector

3 steps evolution: 2007: A MimoSTAR-2 sensors based

telescope has been constructed and performed measurements of the detector environment at STARMimoSTAR-2: sensor with analogue output

2012: The engineering prototype detector with limited coverage (1/3 of the complete detector surface), equipped with PHASE-1 sensors will be installedPHASE-1: sensor with binary output without zero suppression

2013: The pixel detector composed with 2 layers of ULTIMATE sensors will be installedULTIMATE: sensor with binary output and with zero suppression logic

PIXEL detector composed of 2 MAPS layers

Prototype detector composed of 3 sectors with PHASE-1 sensors

3 plans telescope with MImoSATR-2 sensors

Page 18: MAPS for Particles Physics Christine Hu-Guo (IPHC) PHASE1 – STAR IPHC

IPHC [email protected] 18October 2010 USTC

ULTIMATE: Extension of MIMOSA26

Optimisation

20240 µm

2271

0 µ

m

3280

µm

21560 µm

1378

0 µ

m MIMOSA26 ULTIMATE

Reduction of power dissipation

Pixel adjustment & optimisation for a 20.7 µm pixel pitch

Discriminator timing diagram optimisation

Integration of on-chip voltage regulators

Zero Suppression circuit (SuZe) adapted to STAR condition

Minimisation of digital to analogue coupling

Enhance testability

In future chip :Latch up free memory may be integrated

ULTIMATE sensors are planned to be delivered to LBL in Q1 2011

Page 19: MAPS for Particles Physics Christine Hu-Guo (IPHC) PHASE1 – STAR IPHC

IPHC [email protected] 19October 2010 USTC

Direct Applications of MIMOSA26

(DUT)

Pixel Sensor

FP6 project EUDET: Provide to the scientific community an infrastructure aiming to support the detector R&D for the ILC

JRA1: High resolution pixel beam telescope Two arms each equipped with 3 MIMOSA26 (50 µm) DUT between these arms and moveable via X-Y table

Telescope features: High extrapolated resolution < 2 µm Large sensor area ~ 2 cm2

High read-out speed ~ 10 k frame/s

EUDET telescope is available to use it for tests at test beams, mainly at DESY or CERN

Spin-offs Several BT copies: foreseen for detector R&D BT for channelling studies, mass spectroscopy, etc CBM (FAIR): demonstrator for CBM-MVD

CBM (Compressed Baryonic Matter)

FIRST (GSI): VD for hadrontherapy measurements FIRST (Fragmentation of Ions Relevant for Space and

Therapy)

Page 20: MAPS for Particles Physics Christine Hu-Guo (IPHC) PHASE1 – STAR IPHC

IPHC [email protected] 20October 2010 USTC

Extension of MIMOSA26 to Other Projects

STAR HFT (Heavy Flavour Tracker) - PIXEL sensor : (see following slides)

Micro Vertex Detector (MVD) of the CBM : 2 double-sided stations equipped with MIMOSA sensors 0.3-0.5% Xo per station ~< 5 µm single point resolution Several MRad & > 1013neq /cm²/s

Sensor with double-sided read-out r.o. speed ! Start of physics >~ 2016

Vertex detector of the ILC: Geometry: 3 double-sided or 5 single sided layers ~0.2% Xo total material budget per layer 2 μm (4-bit ADC ) < sp < 3 μm (discri.) (~16 µm pitch)

tint. ~ 25 μs (innermost layer) double-sided readout

tint. ~ 100 μs (outer layer) Single-sided readout

Pdiss < (0.1–1 W/cm²)× 1/50 duty cycle

Candidate for other experiments: (VD) EIC, (ITS upgrade, FOCAL) ALICE, (SVT) SuperB, (VD) CLIC …

Page 21: MAPS for Particles Physics Christine Hu-Guo (IPHC) PHASE1 – STAR IPHC

IPHC [email protected] 21October 2010 USTC

R&D Directions: Sensor Integration in Ultra Light Devices

PLUME (Pixelated Ladder with Ultra-low Material Embedding) Project Study a double-sided detector ladder

motivated by the R&D for ILD VD Targeted material budget: <~0.3%XO

Correlated hits reconstruct minivector Better resolution / easier alignment

Sensors with different functionalities on each side Square pixels for single point resolution Elongated pixels for time resolution

SERWIETE (SEnsor Raw Wrapped In an Extra Thin Envelope) Project Motivated by HadronPhysics2, FP7 30 µm thin sensors mounted on a thin flex cable and

wrapped in polymerised film Expected material budget <~ 0.15 % Xo Unsupported & flexible detector layer ?

to evaluate the possibility of mounting a supportless ladder on a cylindrical surface like a beam pipe (used as mechanical support). Proof of principle expected in 2012

Collaboration with IMEC Fully functional microprocessor chip in flexible

plastic envelope. Courtesy of Piet De Moor,

IMEC company, Belgium

IPHC [email protected] 2218-20/10/2010 ATHIC 2010

Time resolution

Spatial resolution

Page 22: MAPS for Particles Physics Christine Hu-Guo (IPHC) PHASE1 – STAR IPHC

IPHC [email protected] 22October 2010 USTC

R&D Directions: Large Area Sensors (LAS)

768x768Pitch ~16 µm

768x768Pitch ~16 µm

768x768Pitch ~16 µm

768x768Pitch ~16 µm

768x768Pitch ~16 µm

768x768Pitch ~16 µm

768x768Pitch ~16 µm

768x768Pitch ~16 µm

768x768Pitch ~16 µm

768x768Pitch ~16 µm

768x768Pitch ~16 µm

768x768Pitch ~16 µm

768x768Pitch ~16 µm

768x768Pitch ~16 µm

768x768Pitch ~16 µm

768x768Pitch ~16 µm

768x768Pitch ~16 µm

BOTTOM

TOP

1 2 3 41 2 3 4

4

3

2

1

TOP

BOTTOM BOTTOM BOTTOM BOTTOM

TOP TOP TOP

4

3

2

1

1 4

2 3

Reticule 2 x 2 cm²

~ 5 cm

~ 5

cm

Large surface detector minimize dead zone AIDA, CBM, EIC, biomedical imaging: sensor well beyond the reticle size

Maximum size of a CMOS chip in modern deep submicron technology is limited by its reticle size (2x2 cm²)

Reticle size is a maximum size that can be realised in a single lithography step

Fabrication using stitching technique

Stitching technique: Large CMOS sensor is divided into smaller

sub-blocks These blocks have to be small enough that

they all fit into the limited reticle space The complete sensor chips

are being stitched together from the building blocks in the reticle.

Page 23: MAPS for Particles Physics Christine Hu-Guo (IPHC) PHASE1 – STAR IPHC

IPHC [email protected] 23October 2010 USTC

R&D Directions: Using 3DIT to Achieve Ultimate MAPS Performances

3DIT: stack thin (~10 µm) IC chips (wafers), inter-connections between chips by TSV

3DIT are expected to be particularly beneficial for MAPS Combine different fabrication processes Resorb most limitations specific to 2D MAPS

Split signal collection and processing functionalities, use best suited technology for each Tier :

Tier-1: charge collection system Epitaxy (depleted or not), deep N-well ? ultra thin layer X0 Tier-2: analogue signal processing analogue, low Ileak, process (number of metal layers)

Tier-3: mixed and digital signal processing Tier-4: data formatting (electro-optical conversion ?)

digital process (number of metal layers)feature size fast laser driver, etc.

Analog Readout Circuit

Diode

Pixel Controller,

A/D conversion

Pix

el C

on

tro

ller

, C

DS

Digital

Analog

Sensor

~ 50 µm

Analog Readout Circuit

Diode

~ 20 µm

Analog Readout Circuit

Diode

Analog Readout Circuit

Diode

TSV

Through Silicon Vias

2D - MAPS 3D - MAPS

RTI internationalInfrared Imager

The First 3D Multiproject Run for HEP

International Collaboration

USA, France, Italy, Germany, …

Page 24: MAPS for Particles Physics Christine Hu-Guo (IPHC) PHASE1 – STAR IPHC

IPHC [email protected] 24October 2010 USTC

IPHC 3D MAPS: Self Triggering Pixel Strip-like Tracker (STriPSeT)

Combination of 2 processes: Tezzaron/Chartered 2-tiers with a high resistivity EPI tier

Tier-1: Thin, depleted (high resistivity EPI) detection tier ultra thin sensor!!! Fully depleted Fast charge collection (~5ns) should be radiation tolerant For small pitch, charge contained in less than two pixels Sufficient (rather good) S/N ratio defined by the first stage “charge amplification” ( >x10) by capacitive coupling to the second stage

Tier-2: Shaperless front-end: Single stage, high gain, folded cascode based charge amplifier, with a current source in the feedback loop

Shaping time of ~200 ns very convenient: good time resolution Low offset, continuous discriminator

Tier-3: Digital: Data driven (self-triggering), sparsified binary readout, X and Y projection of hit pixels pattern

Matrix 256x256 2 µs readout time

Tier-1 Tier-2 Tier-3

Cd~10fF

G~1

Cc=100fF

Cf~10fF off <10 mV

Digital RD

Vth

Ziptronix (Direct Bond Interconnect, DBI®*)

Tezzaron (metal-metal (Cu)

thermocompression) DBI® – Direct Bond Interconnect, low temperature CMOS compatible direct oxide bonding with scalable interconnect for highest density 3D interconnections (< 1 µm Pitch, > 108/cm /cm² Possible)

Page 25: MAPS for Particles Physics Christine Hu-Guo (IPHC) PHASE1 – STAR IPHC

IPHC [email protected] 25October 2010 USTC

IPHC 3D MAPS: Fast 3D Sensor with Power Reduction

MAPS with fast pipeline digital readout aiming to minimise power consumption (R&D in progress)

Subdivide sensitive area in ”small” matrices running individually in rolling shutter mode

Adapt the number of raws to required frame readout time

few µs r.o. time may be reached

Design in 20 µm²: Tier 1: Sensor & preamplifier (G ~ 500 µV/e-) Tier 2: 4-bit pixel-level ADC with offset cancellation circuitry (LSB ~ N) Tier 3: Fast pipeline readout with data sparsification

sp ~ 2 μmTint. < 10 µs

~18-20 µm

Detection diode& Amplifier

4-bit ADC

RO

Sparsification

Page 26: MAPS for Particles Physics Christine Hu-Guo (IPHC) PHASE1 – STAR IPHC

IPHC [email protected] 26October 2010 USTC

Conclusion After 10 year, 2D-MAPS R&D reaches its maturity for real scale applications

EUDET, STAR (PIXEL), FIRST (VD), …

R&D continues: new performance scale accessible with emergent CMOS fabrication technology allowing to fully exploit the potential of MAPS approach

CBM, ALICE/LHC, EIC, CLIC, SuperB, …

System integration (PLUME , SERWIETE) + Intelligent data processing + data transmission

Mediate & long term objective: 3D sensors mainly motivated by RO < few µs Ultimately: expect to become the best performing pixel technology ever …?

Page 27: MAPS for Particles Physics Christine Hu-Guo (IPHC) PHASE1 – STAR IPHC

IPHC [email protected] 27October 2010 USTC

Back up

Page 28: MAPS for Particles Physics Christine Hu-Guo (IPHC) PHASE1 – STAR IPHC

IPHC [email protected] 28October 2010 USTC

Application of CMOS Sensors to CBM Experiment

Page 29: MAPS for Particles Physics Christine Hu-Guo (IPHC) PHASE1 – STAR IPHC

IPHC [email protected] 29October 2010 USTC

Direct Applications of EUDET Sensor

Page 30: MAPS for Particles Physics Christine Hu-Guo (IPHC) PHASE1 – STAR IPHC

IPHC [email protected] 30October 2010 USTC

MIMOSA26 Test

Standard EPI layer (fab. end 2008) v.s. high resistivity EPI layer (fab. end 2009) Charge collection & S/N (Analogue output, Freq. 20 MHz)

EPI layer Standard (~10 .cm) 14 µm High resistivity (~400 .cm)

Charge Collection (55Fe source)

Seed 2x2 3x3 EPI seed 2x2 3x3

~21% ~ 54 % ~ 71 %

10 µm ~ 36 % ~ 85 % ~ 95 %

15 µm ~ 31 % ~ 78 % ~ 91 %

20 µm ~ 22 % ~ 57 % ~ 76 %

S/N at seed pixel

(106Ru source)~ 20 (230 e-/11.6 e-)

10 µm ~ 35

15 µm ~ 41

20 µm ~ 36

0.64 mV 0.31 mV

ENC ~ 13-14 e-