maximum ratings - docs.rs-online.com · dynamic test circuit in figure e) t, es v h), e-t er s d...

IKW40N120T2 TrenchStop

® 2

nd Generation Series

IFAG IPC TD VLS 1 Rev. 2.4 23.09.2014

Low Loss DuoPack : IGBT in 2

nd generation TrenchStop

®

with soft, fast recovery anti-parallel Emitter Controlled Diode

Best in class TO247

Short circuit withstand time – 10s

Designed for : - Frequency Converters - Uninterrupted Power Supply

TrenchStop® 2

nd generation for 1200 V applications offers :

- very tight parameter distribution - high ruggedness, temperature stable behavior

Easy paralleling capability due to positive temperature coefficient in VCE(sat)

Low EMI

Low Gate Charge

Very soft, fast recovery anti-parallel Emitter Controlled HEDiode

Qualified according to JEDEC1 for target applications

Pb-free lead plating; RoHS compliant

Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Code Package

IKW40N120T2 1200V 40A 1.75V 175C K40T1202 PG-TO-247-3

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage VC E 1200 V

DC collector current (Tj=150°C)

TC = 25C

TC = 110C

IC

752

40

A

Pulsed collector current, tp limited by Tjmax IC p u l s 160

Turn off safe operating area

VCE 1200V, Tj 175C

- 160

DC Diode forward current (Tj=150°C)

TC = 25C

TC = 110C

IF

752

40

Diode pulsed current, tp limited by Tjmax IF p u l s 160

Gate-emitter voltage VG E 20 V

Short circuit withstand time3)

VGE = 15V, VCC 600V, Tj,start 175C

tS C 10 s

Power dissipation

TC = 25C

P t o t 480 W

Operating junction temperature T j -40...+175 C

Storage temperature T s t g -55...+150

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

Wavesoldering only, temperature on leads only

- 260

1 J-STD-020 and JESD-022

2 Limited by bond wire

3) Allowed number of short circuits: <1000; time between short circuits: >1s.

PG-TO-247-3

G

C

E

http://www.infineon.com/igbt/


® 2



Thermal Resistance

Parameter Symbol Conditions Max. Value Unit

Characteristic

IGBT thermal resistance,

junction – case

R t h J C 0.31 K/W

Diode thermal resistance,

junction – case

R t h J C D 0.53

Thermal resistance,

junction – ambient

R t h J A 40

Electrical Characteristic, at Tj = 25 C, unless otherwise specified

Parameter Symbol Conditions Value

Unit min. typ. max.

Static Characteristic

Collector-emitter breakdown voltage V ( B R ) C E S VG E=0V, I C=500µA 1200 - - V

Collector-emitter saturation voltage VC E ( s a t ) VG E = 15V, I C=40A

T j=25C

T j=150C

T j=175C

-

-

-

1.75

2.25

2.3

2.2

-

-

Diode forward voltage

VF VG E=0V, IF =40A

T j=25C

T j=150C

T j=175C

-

-

-

1.75

1.80

1.80

2.2

-

-

Gate-emitter threshold voltage VG E ( t h ) IC=1.5mA,V C E=VG E 5.2 5.8 6.4

Zero gate voltage collector current

IC E S VC E=1200V ,

VG E=0V

T j=25C

T j=150C

T j=175C

-

-

-

-

-

-

0.4

4.0

20

mA

Gate-emitter leakage current IG E S VC E=0V,VG E=20V - - 200 nA

Transconductance g f s VC E=20V, IC=40A - 21 - S


® 2



Dynamic Characteristic

Input capacitance C i s s VC E=25V,

VG E=0V,

f=1MHz

- 2360 - pF

Output capacitance Co s s - 230 -

Reverse transfer capacitance C r s s - 125 -

Gate charge QG a t e VC C=960V, IC=40A

VG E=15V

- 192 - nC

Internal emitter inductance

measured 5mm (0.197 in.) from case

LE - 13 - nH

Short circuit collector current1)

IC ( S C ) VG E=15V, t S C10s VC C = 600V,

T j , s t a r t = 25C

T j . s t a r t = 175C

-

220 156

- A

Switching Characteristic, Inductive Load, at Tj=25 C


Unit min. typ. max.

IGBT Characteristic

Turn-on delay time td ( o n ) T j=25C, VC C=600V, IC=40A, VG E=0/15V,

RG=12 ,

L 2 )

=80nH,

C2 )

=67pF Energy losses include “tail” and diode reverse recovery.

- 33 - ns

Rise time t r - 28 -

Turn-off delay time td ( o f f ) - 314 -

Fall time t f - 94 -

Turn-on energy Eo n - 3.2 - mJ

Turn-off energy Eo f f - 2.05 -

Total switching energy E t s - 5.25 -

Anti-Parallel Diode Characteristic

Diode reverse recovery time t r r T j=25C,

VR=600V, IF =40A,

diF /dt=950A/s

- 285 - ns

Diode reverse recovery charge Q r r - 3.3 µC

Diode peak reverse recovery current I r r m - 23 A

Diode peak rate of fall of reverse recovery current during t b

di r r /dt - 350 - A/s

1) Allowed number of short circuits: <1000; time between short circuits: >1s.

2) Leakage inductance L and Stray capacity C due to dynamic test circuit in Figure E.


® 2



Switching Characteristic, Inductive Load, at Tj=175 C


Unit min. typ. max.

IGBT Characteristic

Turn-on delay time td ( o n ) T j=175C VC C=600V, IC=40A, VG E=0/15V,

RG= 12 ,

L 1 )

=180nH,

C1 )

=67pF Energy losses include “tail” and diode reverse recovery.

- 32 - ns

Rise time t r - 28 -

Turn-off delay time td ( o f f ) - 405 -

Fall time t f - 195 -

Turn-on energy Eo n - 4.5 - mJ

Turn-off energy Eo f f - 3.8 -

Total switching energy E t s - 8.3 -

Anti-Parallel Diode Characteristic

Diode reverse recovery time t r r T j=175C

VR=600V, IF =40A,

diF /dt=950A/s

- 480 - ns

Diode reverse recovery charge Q r r - 6.6 - µC

Diode peak reverse recovery current I r r m - 31 - A

Diode peak rate of fall of reverse recovery current during t b

di r r /dt - 200

A/s

1)

Leakage inductance L and Stray capacity C due to dynamic test circuit in Figure E.


® 2



I C,

CO

LL

EC

TO

R C

UR

RE

NT

10Hz 100Hz 1kHz 10kHz 100kHz

0A

20A

40A

60A

80A

100A

120A

140A

160A

TC=110°C

TC=80°C

I C,

CO

LL

EC

TO

R C

UR

RE

NT

1V 10V 100V 1000V

0.1A

1A

10A

100A

DC

10µs

tp=3µs

50µs

500µs

20ms

150µs

f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE

Figure 1. Collector current as a function of switching frequency

(Tj 175C, D = 0.5, VCE = 600V,

VGE = 0/+15V, RG = 12)

Figure 2. Safe operating area

(D = 0, TC = 25C,

Tj 175C;VGE=15V)

Pto

t, P

OW

ER

DIS

SIP

AT

ION

25°C 50°C 75°C 100°C 125°C 150°C0W

100W

200W

300W

400W

I C,

CO

LL

EC

TO

R C

UR

RE

NT

25°C 75°C 125°C

0A

10A

20A

30A

40A

50A

60A

70A

TC, CASE TEMPERATURE TC, CASE TEMPERATURE

Figure 3. Maximum power dissipation as a function of case temperature

(Tj 175C)

Figure 4. Maximum collector current as a function of case temperature

(VGE 15V, Tj 175C)

Ic

Ic


® 2



I C,

CO

LL

EC

TO

R C

UR

RE

NT

0V 1V 2V 3V 4V 5V

0A

25A

50A

75A

100A

125A

150A

15V

20V

7V

9V

11V

13V

VGE

=17V

I C,

CO

LL

EC

TO

R C

UR

RE

NT

0V 1V 2V 3V 4V 5V

0A

25A

50A

75A

100A

125A

150A

20V

15V

7V

9V

11V

13V

VGE

=17V

VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic (Tj = 25°C)

Figure 6. Typical output characteristic (Tj = 175°C)

I C,

CO

LL

EC

TO

R C

UR

RE

NT

0V 2V 4V 6V 8V 10V 12V0A

20A

40A

60A

80A

100A

120A

140A

25°C

TJ=175°C

VC

E(s

at)

, C

OL

LE

CT

OR

-EM

ITT

ER

SA

TU

RA

TIO

N V

OLT

AG

E

-50°C 0°C 50°C 100°C 150°C

0.0V

0.5V

1.0V

1.5V

2.0V

2.5V

3.0V

3.5V

IC=40A

IC=80A

IC=20A

IC=8A

VGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE

Figure 7. Typical transfer characteristic (VCE=20V)

Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)


® 2



t, S

WIT

CH

ING

TIM

ES

20A 40A 60A1ns

10ns

100ns

1000ns

tr

td(on)

tf

td(off)

t, S

WIT

CH

ING

TIM

ES

10 ns

100 ns

1000 ns

tf

tr

td(off)

td(on)

IC, COLLECTOR CURRENT RG, GATE RESISTOR

Figure 9. Typical switching times as a function of collector current

(inductive load, TJ=175°C, VCE=600V, VGE=0/15V, RG=12Ω, Dynamic test circuit in Figure E)

Figure 10. Typical switching times as a function of gate resistor

(inductive load, TJ=175°C, VCE=600V, VGE=0/15V, IC=40A, Dynamic test circuit in Figure E)

t, S

WIT

CH

ING

TIM

ES

VG

E(t

h),

GA

TE-E

MIT

TE

R T

HR

ES

HO

LD

VO

LT

AG

E

TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=40A, RG=12Ω, Dynamic test circuit in Figure E)

Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 1.5mA)


® 2



E,

SW

ITC

HIN

G E

NE

RG

Y L

OS

SE

S

20A 40A 60A0.0mJ

5.0mJ

10.0mJ

15.0mJ

20.0mJ

Ets*

Eoff

*) Eon

and Etsinclude losses

due to diode recovery

Eon

*

E,

SW

ITC

HIN

G E

NE

RG

Y L

OS

SE

S

0.0 mJ

2.5 mJ

5.0 mJ

7.5 mJ

10.0 mJ

Ets*

Eon

*

*) Eon

and Ets include losses


Eoff

IC, COLLECTOR CURRENT RG, GATE RESISTOR

Figure 13. Typical switching energy losses as a function of collector current

(inductive load, TJ=175°C, VCE=600V, VGE=0/15V, RG=12Ω, Dynamic test circuit in Figure E)

Figure 14. Typical switching energy losses as a function of gate resistor

(inductive load, TJ=175°C, VCE=600V, VGE=0/15V, IC=40A, Dynamic test circuit in Figure E)

E,

SW

ITC

HIN

G E

NE

RG

Y L

OS

SE

S

0°C 50°C 100°C 150°C0.0mJ

2.5mJ

5.0mJ

7.5mJE

ts*

Eon

*

*) Eon



Eoff

E,

SW

ITC

HIN

G E

NE

RG

Y L

OS

SE

S

400V 500V 600V 700V0.0mJ

2.5mJ

5.0mJ

7.5mJ

10.0mJ

Ets*

Eon

*

*) Eon



Eoff

TJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=40A, RG=12Ω, Dynamic test circuit in Figure E)

Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ=175°C, VGE=0/15V, IC=40A, RG=12Ω, Dynamic test circuit in Figure E)


® 2



VG

E,

GA

TE-E

MIT

TE

R V

OL

TA

GE

0nC 50nC 100nC 150nC0V

5V

10V

15V

960V240V

c,

CA

PA

CIT

AN

CE

0V 10V 20V

100pF

1nF

Crss

Coss

Ciss

QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge (IC=40 A)

Figure 18. Typical capacitance as a function of collector-emitter voltage

(VGE=0V, f = 1 MHz)

t SC,

SH

OR

T C

IRC

UIT

WIT

HS

TA

ND

TIM

E

12V 14V 16V 18V0µs

5µs

10µs

15µs

I C(s

c), S

HO

RT

CIR

CU

IT C

OL

LE

CT

OR

CU

RR

EN

T

12V 14V 16V 18V0A

100A

200A

300A

VGE, GATE-EMITTER VOLTAGE VGE, GATE-EMITTER VOLTAGE

Figure 19. Short circuit withstand time as a function of gate-emitter voltage

(VCE=600V, start at TJ 175°C)

Figure 20. Typical short circuit collector current as a function of gate-emitter voltage

(VCE 600V, Tj,start = 175C)


® 2



VC

E,

CO

LLE

CT

OR

-EM

ITT

ER

VO

LT

AG

E

0V

200V

400V

600V

0A

20A

40A

60A

0.8us 1.2us0.4us0us

IC

VCE

I C,

CO

LL

EC

TO

R C

UR

RE

NT

0V

200V

400V

600V

0A

20A

40A

60A

0.8us 1.2us0.4us0us

IC

VCE

t, TIME t, TIME

Figure 21. Typical turn on behavior

(VGE=0/15V, RG=12Ω, Tj = 175C, Dynamic test circuit in Figure E)

Figure 22. Typical turn off behavior

(VGE=15/0V, RG=12Ω, Tj = 175C, Dynamic test circuit in Figure E)

Zth

JC,

TR

AN

SIE

NT

TH

ER

MA

L IM

PE

DA

NC

E

10µs 100µs 1ms 10ms 100ms10

-3K/W

10-2K/W

10-1K/W

single pulse

0.01

0.02

0.05

0.1

0.2

D=0.5

Zth

JC,

TR

AN

SIE

NT

TH

ER

MA

L IM

PE

DA

NC

E

tP, PULSE WIDTH tP, PULSE WIDTH

Figure 23. IGBT transient thermal impedance (D = tp / T)

Figure 24. Diode transient thermal impedance as a function of pulse width (D=tP/T)

R , ( K / W ) , ( s )

0.064 3.67*10-4

0.074 3.92*10-3

0.162 1.92*10-2

0.010 3.40*10-1

C1=1/R1

R1 R2

C2=2/R2

R , ( K / W ) , ( s )

0.112 2.80*10-4

0.163 3.27*10-3

0.234 1.71*10-2

0.015 2.68*10-1

C1=1/R1

R1 R2

C2=2/R2


® 2



t rr, R

EV

ER

SE

RE

CO

VE

RY

TIM

E

400A/µs 800A/µs 1200A/µs 1600A/µs0ns

100ns

200ns

300ns

400ns

500ns

600ns

TJ=25°C

TJ=175°C

Qrr,

RE

VE

RS

E R

EC

OV

ER

Y C

HA

RG

E

400A/µs 800A/µs 1200A/µs 1600A/µs

0µC

2µC

4µC

6µC

8µC

TJ=25°C

TJ=175°C

diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE

Figure 23. Typical reverse recovery time as a function of diode current slope (VR=600V, IF=40A, Dynamic test circuit in Figure E)

Figure 24. Typical reverse recovery charge as a function of diode current slope (VR=600V, IF=40A, Dynamic test circuit in Figure E)

I rr, R

EV

ER

SE

RE

CO

VE

RY

CU

RR

EN

T

400A/µs 800A/µs 1200A/µs 1600A/µs0A

5A

10A

15A

20A

25A

30A

35A

40A

TJ=25°C

TJ=175°C

di rr

/dt,

DIO

DE

PE

AK

RA

TE

OF

FA

LL

OF

RE

VE

RS

E R

EC

OV

ER

Y C

UR

RE

NT

400A/µs 800A/µs 1200A/µs 1600A/µs-0A/µs

-200A/µs

-400A/µs

-600A/µs

-800A/µs

-1000A/µs

TJ=25°C

TJ=175°C

diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE

Figure 25. Typical reverse recovery current as a function of diode current slope (VR=600V, IF=40A, Dynamic test circuit in Figure E)

Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=600V, IF=40A, Dynamic test circuit in Figure E)


® 2



I F,

FO

RW

AR

D C

UR

RE

NT

0V 1V 2V 3V0A

25A

50A

75A

100A

125A

150A

TJ = 25°C

175°C

VF,

FO

RW

AR

D V

OLT

AG

E

0°C 50°C 100°C 150°C0.0V

0.5V

1.0V

1.5V

2.0V

2.5V

40A

20A

IF=80A

8A

VF, FORWARD VOLTAGE TJ, JUNCTION TEMPERATURE

Figure 27. Typical diode forward current as a function of forward voltage

Figure 28. Typical diode forward voltage as a function of junction temperature


® 2




® 2



Ir r m

90% Ir r m

10% Ir r m

di /dtF

tr r

IF

i,v

tQS

QF

tS

tF

VR

di /dtr r

Q =Q Qr r S F

+

t =t tr r S F

+

Figure C. Definition of diodes switching characteristics

p(t)1 2 n

T (t)j

11

2

2

n

n

T C

r r

r

r

rr

Figure D. Thermal equivalent circuit

Figure E. Dynamic test circuit .

Figure A. Definition of switching times

Figure B. Definition of switching losses


® 2



Published by Infineon Technologies AG 81726 Munich, Germany © 2014 Infineon Technologies AG All Rights Reserved.

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or

characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or

any information regarding the application of the device, Infineon Technologies hereby disclaims any and all

warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual

property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

www.HYPERLINK

maximum ratings - docs.rs-online.com · dynamic test circuit in figure e) t, es v h), e-t er s d...

Documents