November 6th 2008

Optoelectronic Group

Current Opto-Electronic Group members:

Dr. Jiangang Ma, Dr. Gang Bi, Dr. Fanghai Zhao (partial) ,

Mr. Donghui Li, Mr. Shaibal Mukherjee, Mr. Guangzhe Yu, Mr. Binbin Weng

Current Sponsor: NSF EPSCoR, DoD DEPSCoR, DoD ARO, DoD MDA, OCAST & Industry

Zhisheng Shi, Gerald Tuma Presidential Professor

Electrical and Computer Engineering, University of OklahomaPhone: 405-325-4292, Fax: 405-325-7066, shi@ou.edu

http://coecs.ou.edu/ece/shi/

Impact Of NSF EPSCoR And State Match To Research In My Group

•Collaborations among the center members, e.g. my group with Drs. Johnson’s and Dr. Mao’s group

• Research Interaction among faculty members and studentse.g. with Drs. Santos, Murphy , McCann, and Yang,

• Share of the Center equipment

•Support of a research associate (Dr. Frank Zhao)

Optoelectronic Group

Research Activities: (I) IV-VI semiconductor Micro-structures

Optoelectronic Group

Research Activities: (I) IV-VI semiconductor Micro-structures

EDXA of micro-cuboids<1

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Research Activities: (II) IV-VI semiconductor Nano-Structures (In Collaboration with Dr. Mao’s Group)

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Optoelectronic Group

Research Activities: (III) Development Of Mid-IR Diode Lasers

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Optoelectronic Group

Si2307 I-V (150x150, 20)

-0.03

-0.02

-0.01

0

0.01

0.02

0.03

-0.3 -0.2 -0.1 0 0.1 0.2 0.3 0.4 0.5

Voltage (V)

Cur

rent

(A)

Research Activities: (IV) Development Of Mid- and Long-Wave Detector Array on Si

Custom MBE housed at the University of Oklahoma Opto-Electronics Group Laboratories

Growth of high quality Pb-salt material on Silicon

Fabrication of in-situ PbSnSe p-n junctions

Etched (p-type)

Unetched(n-type)

Etched (p-type)

Unetched(n-type)

novel p-n junction growth techniques

First successful demonstration of PbSe p-n junction !!!!

IV-VI Semiconductor Detectors: The Untapped Potential

“Optimized” Pb1-xSnxSe p-n junctions @ 77K

PbSe; λc = 7.3 µm

Pb0.94Sn0.06Se; λc = 11.4 µm

Pb0.91Sn0.09Se; λc = 15.9 µm

1. F. Zhao, S. Mukherjee, J. Ma, D. Li, S. L. Elizondo and Z. Shi, “Influence of oxygen passivation on optical properties of PbSe thin films”, Appl. Phys. Lett., 92, 211110 (2008).

2. S. Mukherjee, D. Li, D. Ray, F. Zhao, S. L. Elizondo, J. Ma and Z. Shi, “Fabrication of an electrically pumped lead-chalcogenide laser on a [110]-oriented PbSnSe substrate” IEEE Photonics Technology Letters, 20, 629 (2008)

3. S. Elizondo, F. Zhao, J. Kar, J. Ma, J. Smart, D. Li, S. Mukherjee and Z. Shi, “Dielectric Charge Screening of Dislocations and Ionized Impurities in PbSe and MCT", Journal of Electronic Materials, vol. 37, no. 9, pp. 1411-1414, 2008

4. X. J. Wang, C. Fulk, F. Zhao, D. Li, S. Mukherjee, Y. Chang, R. Sporken, R. Klie, Z. Shi, C. H. Grein, and S. Sivananthan, “Characterization of PbSnSe/CdTe/Si (211) Epilayers Grown by Molecular Beam Epitaxy,” Journal of Electronic Materials, vol. 37, no. 9, pp. 1200-1204, 2008

5. S. Mukherjee, S. Jain, F. Zhao, J. P. Kar, D. Li, and Z. Shi, “Strain oriented microstructural change during the fabrication of free-standing PbSe micro-rods,” Journal of Materials Science: Materials in Electronics, vol. 19, pp. 237-240, 2008

6. S. Mukherjee, S. Jain, F. Zhao, J. P. Kar, D. Li and Z. Shi, “Enhanced photoluminescence from free-standing microstructures fabricated on MBE grown PbSe-PbSrSe MQW structure”, J. Microelectronic Engineering, 85, 665 (2008)

7. S. Elizondo and Z. Shi, “One-dimensional analysis of N-on-p Pb1-xSnxSe compositionally graded heterojunction photodetectors”, J. Appl.Phys., 101, 114510 (2007)

8. S. Jain, S. Mukherjee, Z. P. Guan, D. Ray, F. Zhao, D. Li, and Z. Shi, "Fabrication of free-standing PbSe micro-rods", Physica E, 39, 120 (2007)

9. L. A. Elizondo, Y. Li, A. Sow, R. Kamana, H. Z. Wu, S. Mukherjee, F. Zhao, Z. Shi, and P. J. McCann “Optically Pumped Mid-Infrared Light Emitter on Silicon,” J. Appl. Phys. 101, 104504 (2007).

10. A. Majumdar, Z. P. Guan, F. Zhao, D. Li, D. Ray, S. Jain, S. Mukherjee, and Z. Shi, “Fabrication of freestanding semiconductormultiquantum-well microtubes”, Appl. Phys. Lett., 88, 171111(2006).

11. X. H. Zhang, R. E. Doezema, N. Goel, S. J. Chung, and M. B. Santos, N. Dai, F. Zhao and Z. Shi, “Photoluminescence study of InSb/AlxIn1−xSb quantum wells”, Appl. Phys. Lett., 89, 021907 (2006).

12. D.Ray, S.Bondili, S.Jain, D.Li, F.Zhao, A.Majumdar, Z.Guan, and Z.Shi “Development of a Novel Mounting Method for the Fabrication of Pb-Salt Laser Grown on [110] Oriented BaF2 Substrate” IEEE Photonics Technology Letter, 18, 373 (2006).

Publications (2006-2008) Supported Partially By EPSCoR

Optoelectronic Group

IV-VI DBR Vertical Cavity with MQW Active Region

IV-VI Light Emitters on Silicon

High IV-VI semiconductor crystalline quality in spite of 12% lattice parameter mismatch and 700% thermal expansion with Si.

Unlike GaAs-on-Si, IV-VI-on-Si structures do not exhibit degradation from repetitive thermal cycling.

IV-VI Intevac GEN II Modular MBE

Puls

ed P

L In

tens

ity (A

rb. U

nits

)

0

500

1000

1500

150 K200 K

250 K

300 KPulsed Mode PL (λp = 1.064 µm)

Cavity Mode(λ = 1.064 µm)

Wavenumber (cm-1)

1800 2000 2200 2400 2600 2800

Ref

lect

ance

%

0

20

40

60

80

100

Cavity Mode(λp = 1.064 µm)

Energy (meV)

220 240 260 280 300 320 340 360

CW

PL

Inte

nsity

(Arb

. Uni

ts)

0.0

1.0

2.0

3.0

CW Mode PL (λp = 0.911 µm)

300 K

250 K

200 K

150 K

100 K

x 2

(c)

(b)

(a)

CW and Pulsed Mode PL

Heat Sink Temperature (K)

150 175 200 225 250 275 300 325

Ener

gy (m

eV)

230

240

250

260

270

280

290

300

310

Pulsed PLCW PL

Interband AbsorptionPbSe Lz = 20.6 nm, #H017Data from APL 78, 2199 (2001)

300 K is Optimal Temperature for Maximum Light Extraction300 K is Optimal Temperature for Maximum Light Extraction

Pulsed PL PPeak = 3.3 KWPulsed PL PPeak = 3.3 KW

Reflectance300 K

Reflectance300 K

CW PLP = 460 mWCW PLP = 460 mW

W356THeatsink = 200 K

Photon Energy (meV)

225 250 275 300 325 350

Puls

ed P

L In

tens

ity (A

rb. U

nits

)

0

100

200

300

400

CO2

PPeak = 16.7 kW

PPeak = 3.3 kW

Cavity Mode

(1-1)N

(1-1)O

(2-2)N

Excellent agreement between calculated sub-

band energies and peaks in pulsed PL spectra.

Theoretical and Experimental Results

Se, SnSe, PbSe, PbTe, CaF2, BaF2,Bi2Se3, and Ag Sources

In Situ RHEED

MBE Growth of IV-VI Nanostructures on Silicon

Completely in-situ process for MBE growth of IV-VI nanostructures on Si.

CW PL emission observed for a single-layer structure.

Applications include mid-IR optoelectronic devices and thermoelectric cooling and power generation devices.

Si(110) Substrate

CaF2

PbTe

Single Layer structure

500 nm

]101[

1 µm

Template Formation

1 µm

]101[

CaF2 growth on Si(110) immediately adopts a ridge and groove

surface morphology

Self-Organized Template

1 µm]101[

200 nm

CaF2

]101[ 200 nm

]101[

PbSe Dots/Dot-Chains

CaF2

PbSe Dot-Chains200 nm 200 nm

Some preferential alignment of PbSe dot-chains

Quasi-One-Dimensional Nanostructures

First known MBE growth of quasi-one-dimensional PbSe nanostructures on technologically relevant silicon.

Publications and Conference Presentations

Refereed PublicationsL. A. Elizondo, Y. Li, A. Sow, R. Kamana, H. Z. Wu, S. Mukherjee, F. Zhao, Z. Shi, and P. J. McCann “Optically Pumped Mid-Infrared Light Emitter on Silicon,” J. Appl. Phys. 101, 104504 (2007).

T. Laubach, L. A. Elizondo, P. J. McCann, and S. Galani, “Quantum dotting the “i” of inquiry: An authentic approach to teaching nanotechnology” (submitted to The Physics Teacher 2008).

L. A. Elizondo, P. J. McCann, F. Zhao, and Z. Shi, “Electrical and Optical Properties of a IV-VI Semiconductor Structure on Silicon,”IEEE LEOS 19th Annual Lasers and Electro Optics Society Meeting (IEEE Cat. No. 06CH37736C), Montreal, Canada October 29-November 2, 2006.

Oral PresentationsL. A. Elizondo, P. J. McCann, F. Zhao, Z. Shi, J. C. Keay, and M. B. Johnson, ” Growth and Characterization of PbSe Dot-Chains on Silicon”, TMS Electronic Materials Conference, Santa Barbara, CA, June 25-27, 2008.

L. A. Elizondo, P. J. McCann, F. Zhao, and Z. Shi, “Electrical and Optical Properties of a IV-VI Semiconductor Structure on Silicon,”IEEE LEOS 19th Annual Lasers and Electro Optics Society Meeting, Montreal, Canada October 29-November 2, 2006.

Poster PresentationsL. A. Elizondo, P. J. McCann, S. L. Elizondo, F. Zhao, S. Mukherjee, Z. Shi, J. C. Keay, and M. B. Johnson, ”Quantum Effects in IV-VI Semiconductor Nanostructures”, University of Oklahoma Research and Performance Day, Norman, OK, March 29, 2008.

L. A. Elizondo, P. J. McCann, F. Zhao, Z. Shi, J. C. Keay, and M. B. Johnson, ”MBE Growth of IV-VI Nanowires on a Self-organized Template”, Spring Materials Research Society Meeting, San Francisco, CA, March 24 – 28, 2008.

L. A. Elizondo, P. J. McCann, S. L. Elizondo, F. Zhao, S. Mukherjee, Z. Shi, J. C. Keay, and M. B. Johnson, ”Quantum Effects in IV-VI Semiconductor Nanostructures”, Oklahoma EPSCoR, NanoFocus & NSF EPSCoR – Annual State Conference, Oklahoma City, OK, March 6 – 7, 2008.

L. A. Elizondo, P. J. McCann, S. L. Elizondo, F. Zhao, and Z. Shi, “Optical Properties of Low-Dimensional IV-VI Semiconductor Materials,” Oklahoma EPSCoR, Stillwater, OK May 17, 2007.

L. A. Elizondo, P. J. McCann, S. L. Elizondo, F. Zhao, and Z. Shi, “Optical and Theoretical Investigations of IV-VI Semiconductor Nanostructures Epitaxially Grown on Silicon,” Research and Creative Endeavors, Norman, OK April 6, 2007.

L. A. Elizondo, P. J. McCann, F. Zhao, and Z. Shi, “Optical Study of Subband Filling and Excited State Lifetimes in IV-VI Quantum Well Materials on Silicon,” Oklahoma EPSCoR, Norman, OK May 18, 2006.