medipix3 test set up
TRANSCRIPT
PREPARING THE NEXT GENERATION OF HYBRID
PIXEL DETECTOR READOUT CHIPS
M. Campbell, J. Alozy, R. Ballabriga, E. Frojdh, E.H.M. Heijne,
X. Llopart, T. Poikela, E. Santin, L.Tlustos, P. Valerio and
W.Wong
CERN, EP Department
1211 Geneva 23
Switzerland
Disclaimer
• This talk will NOT cover:
– Developments for ATLAS and CMS hybrid pixel detector
readout in 65nm (RD53)
– Work on monolithic pixel detectors (HV/HR CMOS etc)
-3- 3
Outline
• Hybrid pixel detectors
• Some chips from the Medipix family
• Timepix
• Timepix3
• A few examples of non-HEP applications
• CLICpix
• Progress with TSVs
• Conclusions
-4- 4
Medipix2 Collaboration
• U INFN Cagliari
• CEA-LIST Saclay
• CERN Genève
• U Erlangen
• ESRF Grenoble
• U Freiburg
• U Glasgow
• IFAE Barcelona
• Mitthoegskolan
• MRC-LMB Cambridge
• U INFN Napoli
• NIKHEF Amsterdam
• U INFN Pisa
• FZU CAS Prague
• IEAP CTU in Prague
• SSL Berkeley
http://medipix.web.cern.ch/MEDIPIX/
• University of Canterbury, Christchurch, New Zealand
• CEA, Paris, France
• CERN, Geneva, Switzerland,
• DESY-Hamburg, Germany
• Albert-Ludwigs-Universität Freiburg, Germany
• University of Glasgow, Scotland, UK
• Leiden University, The Netherlands
• NIKHEF, Amsterdam, The Netherlands
• Mid Sweden University, Sundsvall, Sweden
• IEAP, Czech Technical University, Prague, Czech Republic
• ESRF, Grenoble, France
• Universität Erlangen-Nurnberg, Erlangen, Germany
• University of California, Berkeley, USA
• VTT, Information Technology, Espoo, Finland
• KIT/ANKA, Forschungszentrum Karlsruhe, Germany
• University of Houston, USA
• Diamond Light Source, Oxfordshire, England, UK
• Universidad de los Andes, Bogota, Colombia
• University of Bonn, Germany
• AMOLF, Amsterdan, The Netherlands
• Technical University of Munich, Germany
• Brazilian Light Source, Campinas, Brazil
The Medipix3 Collaboration
-6- 6
Hybrid Silicon Pixel Detectors
Fill factor is 100 % (away from periphery)
Full depletion of sensor allows prompt charge collection
Extremely high SNR easy to reach
Standard CMOS can be used allowing on-pixel signal processing
Sensor material can be changed (Si, GaAs, CdTe..) or replaced
(Microchannel Plate, GEM, InGrid…)
But because of low volumes bump bonding is still expensive
p+
n-
ASICn-well
p-substrate
Semiconductor
detector
Bump-bond
contact
Charged particle
gm
Iin Vout
-7- 7
Micro-channel plate readout
MCP can be used to detect electrons, ions or neutrons (when e.g. B doped)
-8- 8
Gas detector readout - InGrid
Semiconductor detector is replaced with charge amplification grid
Permits lower energy events to be detected
NB: GEM foils may be used in place of the InGrid foils
H. van der Graaf et al
-9- 9
Hybrid pixel detectors
• Developed initially for LHC
• 3 large scale vertex detector systems operating smoothly
• One large RICH detector system (based on hybrid pixels
in a photodetector tube) contributing to LHCb physics
• In the Medipix2 and Medipix3 Collaborations we have
taken the technology into many new fields
• This talk reviews the status of the Medipix developments,
synergetic developments with CLICdp and briefly
outlines some future plans
Medipix chips since 2000
• Medipix2 (2002-2005)
– First photon counting chip at 55mm pitch
– Camera logic (shutter driven)
– Window discriminator/pixel
– Frame based readout (sequential read/write)
• Timepix (2006)
– Same IO as Medipix2
– Possibility to programme pixels to count hits, record arrival time or ToT
• Medipix3 (2009-2014)
– First photon counting chip with charge summing and allocations scheme
– Programmable sensor pixel pitch (55mm or 110mm)
– Frame-based readout but possibility of continuous read/write
• Timepix3 (2014-2015)*
– Fully data driven architecture
– For each hit pixel coordinates, amplitude and arrival time are sent off chip
* Chip designed at CERN, Nikhef and Bonn
-11- 11
Pixel matrix 256 x 256
Pixel size 55 x 55 μm2
Technology CMOS 250 nm
Charge collection polarity +ve or –ve (programmable)
Measurement modes Programmable per pixel:
• Single particle counting
• Timepix (arrival time wrt shutter)
• Time over Threshold
# thresholds 1 per 55 μm pixel
4-bit threshold adjustment
Counter depth 1 x 14-bits
Readout type Frame based
• Sequential R/W
Readout Time Serial: <100ms at 100MHz
Parallel: <300ms @ 100MHz
Minimum threshold ~ 650 e-
Timepix Specifications
-12- 12
Pixel matrix 256 x 256
Pixel size 55 x 55 μm2
Technology CMOS 130 nm
Charge collection polarity +ve or –ve (programmable
Measurement modes • Simultaneous 10 bit TOT and 14 + 4 bit
TOA
• 14 + 4 bit TOA only
• 10 bit PC and 14 bit integral TOT
# thresholds 1 per 55 μm pixel
4-bit threshold adjustment
Readout type • Data driven
• Frame based
(both modes with zero suppression)
Dead time (pixel, data driven) >475 ns (pulse processing + packet transfer)
Output bandwidth 40 Mbits/s – 5.12 Gbits/s
Maximum count rate 0.4 Mhits/mm2/s (data driven mode)
TOA Precision 1.56 ns
Front end noise 60e- RMS
Minimum threshold ~500 e-
Timepix3 Specifications
-13- 13
Timepix miniaturised readout
IEAP/CTU, Prague
-14- 14
CERN@school
Simon Langton School, Canterbury, England
-15- 15
CERN@school status August 2015
http://cernatschool.web.cern.ch/participating-institutions
-16- 16
Annual CERN@school Symposium
Langton student Katherine Evans
presenting at the CERN@school
Symposium in September 2014
-17- 17
Image of the astronaut Chris Cassidy working near the Timepix USB on the
International Space Station (Courtesy of NASA, photo ref. no. iss036e006175)
-18- 18
Timepix - 4s exposures
South China Sea South Atlantic Anomaly
University of Houston, IEAP Prague, NASA
-19- 19
0.3 mGy/d
3 mGy/d
5.5 mGy/d
REM Dose Rate Data (mG/min)
University of Houston, IEAP Prague, NASA
-20- 20
2 TIMEPIX chips inside the BIRD (Battery-operated
Independent Radiation Detector)
Timepix chip
ORION test flight
-21- 21
EFT-1 Dose-Rate (mG/min) Along the Trajectory
Courtesy of Ryan Rios, NASA, JSC
Space Radiation Analysis Group
-22- 22
A few examples of Other applications
-23- 23
Time of Flight Mass Spectrometry
“Enhanced Detection of High-Mass Proteins by Using an Active Pixel Detector”,
Shane R Ellis et al, Angewandte Chemie DOI: 10.1002/anie.201305501
-24- 24
Time of Flight Mass Spectrometry
“Enhanced Detection of High-Mass Proteins by Using an Active Pixel Detector”,
Shane R Ellis et al, Angewandte Chemie DOI: 10.1002/anie.201305501
-25- 25
Low Energy Electron Microscopy
I. Sikharulidze, J-P Abrahams and co-workers
‘Medipix2 applied to low energy electron microscopy’, Ultramicroscopy 110
(2009) 33 - 35
MCP + CCD
imagesMedipix2 Images Graphene flakes
-26- 26
InGrid Applications
Slide courtesy of K. Desch, Univ Bonn
-27- 27
CAST Calibration
Slide courtesy of K. Desch, Univ Bonn
-28- 28
Applications not covered
• ATLAS radiation monitoring
• Beam profile monitoring at SPS
• Beta radiography
• Characterisation of novel sensor materials/structures
• Dosepix
• Electron cryo-microscopy
• Electron emission channelling at ISOLDE
• Gamma camera
• Hadron therapy beam and dose monitoring
• LHCb VELOpix – based on Timepix3
• Neutron imaging
• Nuclear waste monitoring @ CERN (55Fe)
• UA9 beam profile monitoring
-29- 29
Energy and time measurements with
cosmic particles
-30- 30
Cosmic ray in Timepix3 - Measurement
Precise arrival time information (1.6ns steps) provides depth
of interaction within the sensor layer
Bias 100V, Ikrum 5, with time walk correction
-31- 31
Note: Not to scale!
Bias 100V, Ikrum 5, with time walk correction
5 mm5 mm
300 mm
Cosmic ray in Timepix3 - Reconstruction
-32- 32
Tracks with low bias voltage
Bias 20V, Ikrum 5, with time walk correction
-33- 33
Aegis Experiment
Slide courtesy of H. Holmestad, Univ Oslo
ToT information
-34- 34
Aegis Experiment
Slide courtesy of N. Pacifico, Univ Oslo
ToA information
-35- 35
Use of Timepix and Timepix3 by CLICdp
• Timepix and Timepix3 are available in wafer form and with (in the case of
Timepix) very well characterised readout systems
• Both devices have been used to study the behaviour of different sensor
types:
– p+ on n
– n+ on p
– Different suppliers
– varying thickness (300um, 200um, 100um, 50um)
– Different edgeless topologies
• See talk tomorrow by Nilou ALIPOUR
-36- 36
Timepix telescopes at CERN
2 particle telescopes have been installed at the CERN
SPS:
LHCb telescope used for evaluating irradiated sensors
in the context of the VELOpix R and D
CLIC telescope used to evaluate novel tracking
sensor hybrids for CLIC
Both telescopes use every particle which traverses
the telescope – 1TB/day…
Pointing resolution << 5mm (consistent with 55 mm
pixel pitch, tilted planes and analog readout
-37- 37
Timepix telescopes at CERN
-38- 38
Timepix telescopes at CERN
2 particle telescopes have been installed at the CERN
SPS:
LHCb telescope used for evaluating irradiated sensors
in the context of the VELOpix R and D
CLIC telescope used to evaluate novel tracking
sensor hybrids for CLIC
Both telescopes use every particle which traverses
the telescope – 1TB/day…
Pointing resolution << 5mm (consistent with 55 mm
pixel pitch, tilted planes and analog readout
-39- 39
CLICpix
• CLICpix is a hybrid pixel detector to be used as the CLIC vertex detector
• Main features:– small pixel pitch (25 μm),
– Simultaneous TOA and TOT measurements
– Power pulsing
– Data compression
• A demonstrator of the CLICpix architecture with an array of 64x64 pixels has been submitted using a commercial 65 nm technology and tested
• The technology used for the prototype has been previously characterized and validated for HEP use and radiation hard design*
*S. Bonacini, P. Valerio et al, Characterization of a commercial 65 nm CMOS technology for SLHC applications, Journal of Instrumentation, 7(01):P01015–P01015, January 2012
1.85 mm
3 m
m
-40- 40
“Moore’s law” for pixel detectors
0.01
0.1
1
10
00.10.20.30.40.50.60.7
CMOS process [µm]
Tran
sist
or
den
sity
per
pix
el a
rea
[tra
nsi
sto
rs/µ
m2]
Medipix1 (1998)
Medipix2 (2002)Timepix (2006)
Medipix3RX
(2012)
Timepix3 (2013)
CLICpix (2013) – 65 nm
-41- 41
A simple block diagram
Data INData
OUT
Analog part of adjacent pixels share biasing lines. Digital part is shared between each two adjacent pixels
64x64 pixel matrix
Chip periphery
-42- 42
Pixel architecture
• The analog front-end shapes photocurrent pulses and compares them to a fixed (configurable) threshold
• Digital circuits simultaneously measure Time-over-Threshold and Time-of-Arrival of events and allow zero-compressed readout
Inpu
t
CS
A
4-bit Th.Adj
DAC
Feedback
network
Polarity
TOA ASM
TOT ASM Clk divider
4-b
it T
OT
co
un
ter
4-b
it T
OA
co
un
ter
HF
Bottom pixel
Top pixel
Configuration data:
Th.Adj, TpulseEnable,
CountingMode, Mask
Threhsold
Vtest_pulse
Clock
-43- 43
TOT measurements
TOT gain variation is 4.2% r.m.s.
Tested for nominal feedback current
Corners have lower TOT gain
TOT integral non-linearity for different
feedback currents was tested
TOT dynamic range matches
simulations
-44- 44
Threshold equalization
• Routines for equalizing the threshold using the pixel calibration DACs were implemented, finding the noise floor for all pixels
• Calibrated spread is 0.89 mV (about 22 e-
assuming a 10 fFtest capacitance) across the whole matrix
-45- 45
Noise characterization
• Threshold scans
through the baseline
voltage were used to
calculate the noise floor
• There is a small pattern
effect due to the
different routing of pixels
in the double column
• Average noise is 1.96
mV r.m.s. (about 51 e-
assuming a 10 fF test
capacitance)
-46- 46
Measurement summary
Simulations Measurement
Rise time 50ns
TOA Accuracy < 10 ns < 10 ns
Gain 44 mV/ke- 40 mV/ke-
Dynamic Range up to 40 ke-
(configurable)
up to 40 ke-
(configurable)
Non-Linearity (TOT) < 8% at 40 ke- < 4% at 40 ke-
Equivalent Noise ~60 e- (without
sensor capacitance)
~51 e- (with a 6%
variation r.m.s.)
DC Spread
(uncalibrated)
σ = 160 e- σ = 128 e-
DC Spread
(calibrated)
σ = 24 e- σ = 22 e-
Power
consumption
6.5 μW 7 μW
Measurements
expressed in
electrons depend
on the test
capacitance. A
nominal value of
10 fF was
assumed here
-47- 47
Tests with detectors
• Calibration with radioactive sources, test pulses
and beams have been carried out using CCPDv3
sensors glued to CLICpix
• Systematic studies of gluing uniformity and
alignment
• Chip could be well characterized (See: Steven
Green et al. LCWS 15)
• For results using planar sensors. Please see
Magdalena MUNKER’s talk tomorrow
-48- 48
Tests with detectors
• Calibration with radioactive sources, test
pulses and beams have been carried out using
CCPDv3 sensors glued to CLICpix
• Systematic studies of gluing uniformity and
alignment
• Chip could be well characterized (See: Steven
Green et al. LCWS 15)
• For results using planar sensors. Please see
Magdalena MUNKER’s talk tomorrow
-49- 49
Tests with detectors
• Calibration with radioactive sources, test pulses
and beams have been carried out using CCPDv3
sensors glued to CLICpix
• Systematic studies of gluing uniformity and
alignment
• Chip could be well characterized (See: Steven
Green et al. LCWS 15)
• For results using planar sensors. Please see
Magdalena MUNKER’s talk tomorrow
-50- 50
CLICpix2
• Chip 4 times larger (128 x 128 pixels)
• A few bug fixes
• Maintain 2x8 superpixel structure
• Increased number of TOT bits 4->5 bit
• Increased number of TOA bits 4-> 8
• For status please see talk of Pierpaolo VALERIO
tomorrow
-51- 51
Tiling larger areas
Single chip assembly
Sensor
ASIC
-52- 52
Tiling larger areas – present day solution
ASIC
SensorLadder – n x 1
-53- 53
Tiling larger areas– present day solution
ASIC
ASIC
Ladder – n x 2
-54- 54
Tiling larger areas– present day solution
-55- 55
Tiling larger areas - TSVs at periphery
TSVs for IO eliminate wire bonding reducing dead area
-56- 56
Tiling larger areas - TSVs within pixel matrix
If IO are distributed within the pixel matric TSVs permit seamless tiling
-57- 57
Tiling larger areas - TSVs within pixel matrix
Permits use of single 4-side buttable tiles
-58- 58
Through Silicon Via processing of
Medipix3/Timepix3
Through Silicon Vias offer the possibility of creating 4-side buttable tiles
3 projects for been undertaken with LETI
- Funding mainly from Medipix3 Collaboration, AIDA and LCD group
1) 2011 - Feasibility of TSV processing on Medipix3 (low yield wafers)
2) 2013 - Proof of yield using Medipix3RX wafers (6 wafers)
3) 2014 - TSV processing of ultra-thin Medipix3/Timepix3 wafers
(50mm)
-59- 59
TSV processing on the Medipix3
MEDIPIX3 pixel side native thickness TSV processed chip“BGA” bottom
distribution
-60- 60
First image of Medipix3
TSV processed chip bump bonded to 300mm thick Si sensor
-61- 61
Sensor 500mm
(edgeless)
Chip thinned to
120mmWire bond for sensor HV bias
Sensor 200mm
Chip 750mm
Wirebonds for sensor HV biasASIC wire bonds
TSVs on Medipix3RX
TSV: CEA-Leti, FR
Flip chip: Advacam, FI
-62- 62
Dimensional Limitations of Present TSV Process
Process
does not
cover full
wafer
-63- 63
Yield verification of TSV Processed Wafers
-64- 64
Yield from 2nd TSV Project with LETI
Lot no. uSA999P Lot no. uSB254P
P04 P05 P06 P01 P02 P03
% KGD before TSV (on wafer) 57 51 50 50 60 53
% KGD after TSV (chips) 45 41 rework 20 41 38
-65- 65
Photo comparing 50mm and 120mm thick
Medipix3RX Chips with TSV Processing
50mm 120mm
-66- 66
What’s next for the Medipix family?
• A new Collaboration called Medipix4 is in formation
• Chips to be fully 4-side tile-able
• 2 chips development are foreseen:-
• Medipix4 Photon counting spectrometric chip– Will use charge summing and allocation scheme
– Multiple thresholds
– Pixel pitch varied to match sensor material
– Better high count rate performance (aimed at human CT)
• Timepix4– Smaller pixel pitch
– Better timing resolution (sub-ns)
– Better high count rate performance (TSV)
-67- 67
What’s next for CLICdp
• CLICpix2 to be submitted shortly
• We have developed a chip (called C3PD) in AMS
180nm HV process which is CLICpix2 compatible
(see talk by Iraklis Kremastiotis of this morning)
• Evaluate CLICpix2 with C3PD and planar sensors
• Construct a low mass module based on CLICpix2
for power pulsing tests
• Construct a low mass multi detector module based
on thin (50mm) and TSV processed Timepix3
combined with thin (50mm) planar edgeless
sensors
-68- 68
Summary
• Hybrid pixel detectors were developed to respond to a need at
the LHC – particle tracking in high rate environments
• In spite of their relatively high cost (driven by low volume bump
bonding) they remain the detector of choice in high rate
environments
• Timepix/Timepix3 proved the versatility of the technology for
multiple other applications
• Timepix3 demonstrates particle tracking in a single
semiconductor layer and has been used to construct an
extremely high rate beam telescope
• Both chips serve as technology platforms for novel sensor
configurations and this feature has been well exploited by CLICdp
(and others)
-69- 69
Summary (contd)
• CLICpix and CLICpix2 (65nm CMOS) are designed for combined
high spatial resolution and precision timestamping @ CLIC
• C3PD (180nm HV CMOS) will serve to evaluate CLICpix2
• Progress with TSV technology demonstrated using
Medipix3/Timepix3 indicates that 4-side tile-able chips are
feasible
• The Medipix4 Collaboration (which is in formation) will fully
explore the design of 4-side tile-able readout chips for the first
time
• The Medipix3 and the future Medipix4 Collaborations will
continue to work in synergy with the CLIC vertex community
-70- 70
Thank you for your attention!
Medipix3RX images: S. Procz et al.