mesec series - american vacuum society · 2019-06-06 · components division ultimate in vacuum...

Components Division

Ultimate in Vacuum since 1952

IntegratedIntegrated　　Metrology System for Metallization ProcessMetrology System for Metallization Process

MESEC SeriesMESEC Series

[email protected]

Components DivisionComponents DivisionULVAC, Inc.ULVAC, Inc.

121.3

124.5

127.8

131.0

134.3

137.5

140.8

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6.29675DEV:132.83754Average:120.55Min:143.64999Max:

f=10MHzLiftOff=300μmt=0.15μmlong,Mode2,1sΦ175mm,Δ20mm92.9,147.8,202.8nm

Comment:naganoOperator:000114-6Sample Name:

DData:

2000/01/14Date:

ULVAC 2D Graph

X Axis

Y Axis

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f=4MHzLiftOff=300μmt=150nm+800nmlong,Mode2,1sΦ175mm,Δ20mm

ULVAC 3D Graph

19.76964DEV:921.10804Average:883.79999Min:965.03003Max:D(nm)Data:

ULVAC950nmP

1999/12/21

Comment:Operator:Sample Name:Date:

X (mm)D(nm)

Y(mm)

2004/07/28

mailto:[email protected]

Components Division


IntroductionIntroduction

　　　　　　　　　　　　　　　　　　■■ To measure the conductive film thickness on silicon wafer by non-contact and non-destructive method, ULVAC developed the measurement system based on eddy current detecting technology (MESEC).

■■ Usually, 4-point probe measurement system is used to measure the conductive film thickness on wafer. The probe contacts the film, and cause damage on the surface. This kind of system is only used for indirect evaluation of semiconductor process on monitor wafers. But MESEC can evaluate directly on product wafers. So it is possible to obtain more reliable data and to reduce the cost on monitor wafers.

　　　　

■■ ULVAC developed following three　kinds of systems,

　Built-in Type (MESEC-BIT) : Integrated onto the deposition systems, such as PVD, CVD and ECD

Stand-alone Type (MESEC-SAT) : Used for in-line or off-line measurement.

In-situ Type (MESEC-IST) : Under evaluation on CMP equipment

Components Division


Measurement PrincipleMeasurement Principle

　The eddy current technique is based on the principle of magnetic inductance effect. If conductive material, like metal film, is placed in the presence of a changing magnetic field, eddy current is induced on the film. The inductance of detective coil changes with the eddy current. The value of inductance is corresponded with thickness of the conductive film. Therefore, the thickness of the film is possible to be measured by measuring inductance of the coil.

Components Division


FeaturesFeatures　　■ It is possible to measure the thickness of thin metal films on silicon device wafers by

using this non-contact and non-destructive technique which enables product wafers to be measured directly.

　■ Small-size eddy current probe and speedy measuring time makes it possibleto built this system into PVD, CVD, ECD(plating), and CMP tools, etc.

　■ A capacitance displacement sensor measures the distance between eddy current probe and the wafer surface, ensuring precision and accuracy of film thickness measurements.

　■ Auto dynamic calibration prevents long term drift in the measuring system, helping to ensure excellent repeatability of film thickness measurements.

　■ Users can easily construct a database to calculate thickness of metal alloy films, make it possible to measure thickness of most metal alloy films. (Stand-alone type only)

　■ Powerful data analysis software and flexible graphic functions are available with graphical user interface. (Stand-alone type only)

Components Division


OutsideOutside（（StandStand--alone alone TypeType）　　）　　

MESEC SAT (Open cassette)MESEC SAT (Open cassette)

Components Division

Ultimate in Vacuum since 1952OutsideOutside（（StandStand--alone Typealone Type）　　）　　

MESECMESEC--SATSAT（（FOUPFOUP）　　　　　）　　　　　

Components Division

Ultimate in Vacuum since 1952Possible MESEC Integration forDual -damascene Copper Process

Components Division


OutsideOutside（（BuiltBuilt--in Typein Type）　　）　　

　　　　　　　　MESECMESEC--BIT2000ABIT2000A MESECMESEC--BIT2000BBIT2000B MESECMESEC--BIT3000SBIT3000S

Components Division

Ultimate in Vacuum since 1952MESEC- Evaluation for Cu-seed process -

MESEC Integrated into ULVAC ENTRON W-300 System

BIT-MESEC

F3

TaN/TaPre-clean

F1 R1

R2

R3

R4

RXFXLA

LB

MArm A

Arm B

Cu

Arm A

Arm B

Aligner

Port1

Port3

Port2

BIT-MESEC

Components Division


Benefits for ECD Suppliers

Integrated metrology is very important for advanced 200mm and all 300mm ECD.

Several ECD suppliers have integrated metrology units in ECD plating tools.

Multiple ULVAC MESEC Integrated Metrology Modules are running in field testing with production ECD copper wafers.

Components Division


Standard specificationStandard specification

Film thickness measurement range: 0.03μm～5μm

Measurable material: Thin conductive film on silicon wafer

（Cu、AL、AlCu,etc）

Film thickness measurement precision: +/- 1% (for calibrated reading)　

Film thickness measurement repeatability : +/- 0.5% (1σ) 　　　　　　　　　　　　　

　　　　　　　　(In the case of measuring same point 10 times repeatability)

Spatial resolution: 3mm（Sensor diameter：2.2mm）

Measuring speed:　 1second/point or less

(except movement time of stage)

Stage size: 200mm、300mm

Measurement mode: R-θ mapping, X-Y grid

Software operational environment: Windows NT4

Components Division


Correlation between MESEC and 4Correlation between MESEC and 4--Points ProbePoints Probe

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MESEC

Measured Sample: Cu plating film on 200mm wafer substrateScan Mode: Diameter scan on wafer, total 37 points with 5mm pitch

4-point Probe

200mm wafer Correlation Correlation coefficient coefficient is 99%!!is 99%!!

Components Division


Correlation between MESEC, MetaPulse and 4Correlation between MESEC, MetaPulse and 4--Points ProbePoints Probe

Post ECD Film Measurement

80%

85%

90%

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100%

105%

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115%

120%

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Radial position (mm)

Thi

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ss (n

orm

aliz

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ULVAC MESEC 4 pt probe Rudolph Metapulse

Components Division

Ultimate in Vacuum since 1952Performance Comparison　for4-Points Probe and MESEC

0 100 200 300 400 500 600 700 8000

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500

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700

800Thickness Measured by Two Kinds of Methods (nm)

Thickness of Cu Film by Stylus Profiler (nm)

4-Points Probe MESEC

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Thickness Measured by Two Kinds of Methods (nm)

Thickness of Cu Film by Stylus Profiler (nm)

FourPoints MESEC

Components Division


30 60 90

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Cu Plating Film (Target Thickness: 900nm) Cu Plating Film (Target Thickness: 2000nm)

Measurement Repeat Times

Thickness Measured by MESEC(nm)

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Thickness Measured by MESEC(nm)

Average = 2139.2Std. Dev.= 3.91Std. Dev./Average = 0.18%

Average = 904.0Std. Dev.= 1.30Std. Dev./Average = 0.14%

Evaluation onLong Term Stability (Several Days Interval, 30 times/day)

Components Division

Ultimate in Vacuum since 1952Evaluation onLong Term Stability (Several Days Interval, 30 times/day)

30 60 9050

52

54

56

58

60Thickness Measured by MESEC(nm)

Measurement Repeat Times

Cu Thin Film by PVD Process (Target Thickness: 50nm)

Average = 54.4nmStd. Dev.= 0.10nmStd. Dev./Average = 0.18%

Components Division

Ultimate in Vacuum since 1952Measurement on Multi-layer Patterned Waferafter ECD Process

Top Layer

Under Layer

Plating Layer (Cu)

Seed Layer (Cu)

Barrier Layer (Ta/TaN)

The top film is unpatterned and can support eddy current formation. Underlying metal are patterned which breaks up the eddy currents, unless there are large areas of unpatterned metal. These large areas of unpatterned underlying metal may occur on test die or in alignment areas but would not normally be found within an active die area.

Components Division

Ultimate in Vacuum since 1952Measurement on Multi-layer Patterned Waferafter ECD Process

Diameter Scan on Patterned Wafer (After ECD Process)

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) Underlying multi-layer does not affects the measurement results of top plating layer.

Components Division


Why our customers selected Why our customers selected the MESEC ? the MESEC ?

-- -- -- Real value of the MESEC Real value of the MESEC

Process OptimizationProcess Optimization

Improved ReliabilityImproved Reliability

Cost of Ownership SavingCost of Ownership Saving

Components Division


Conventional line Conventional line ------

CMPPVD ECD Inspection

ECD Metrology

The wafers are inspected after all processes. Or even if after each process,

they are evaluated all at once.

Components Division


As a result As a result -- -- --

When defects are found during metrology measurement, feed back information to the deposition tool is too late.

ECD Metrology

Feed backFeed back

Components Division


ULVAC SolutionULVAC Solution

Integrate the MESEC onto each Cu process line.Integrate the MESEC onto each Cu process line.

NonNon--contact contact

Speedy measurementSpeedy measurement

CompactCompact

StabilityStability　　

Accuracy Accuracy

Cost savingCost saving

High reliabilityHigh reliability

Measurement of all production wafersMeasurement of all production wafers

Easy to integrateEasy to integrate

Worth to integrate the MESECWorth to integrate the MESEC

QC wafers QC wafers

Indirect inspection time Indirect inspection time

The waste wafer The waste wafer

Reduce Reduce

NecessaryNecessary

Components Division


Measurement applicationMeasurement application

Diameter ScanDiameter Scan

For surface uniformity analysis.

To see the result of deposition.

Overall ScanOverall ScanFor surface uniformity analysis.

For control of the exchange cycle of consumable parts for deposition tool, such as target, bath and pad, etc.

For Quality Control.

Components Division


Measuring inMeasuring in--coming wafercoming wafer

Feed forward the result to select an optimum recipe.

Profile OptimizerProfile OptimizerDiameter Scan on Patterned Wafer (Before ECD Process)

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MESEC

Components Division


Measuring outgoing waferMeasuring outgoing wafer

Check results and provide feed back for ECD improvement. Stop producing waste wafers at once !

MESEC

Diameter Scan on Patterned Wafer (After ECD Process)

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Profile KeeperProfile Keeper

Components Division


Why integrated the MESEC

Advantage for the PVD, ECD and CMP supplier Advantage for the PVD, ECD and CMP supplier

Optimization of film thickness profile (Feed-forward)Dynamic deposition control (Feed-back)Yes/No decision on the production wafer

Advantage for the end user Advantage for the end user

Reduction of QC/monitor wafersOn the fly tool qualificationsHigher Yield Ratio

Components Division


Trial calculationTrial calculation

Reduction effect on test wafer expense.Reduction effect on test wafer expense.

0.81.6

3.24

6.4

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Wafer throughput capacity (10 thousand wafer/ year)

Annual costreduction(million $)

200mm

300mm-- Condition Condition --

--5 5 wiring processes / waferwiring processes / wafer--Unit price of 200mm wafer: $ 80.Unit price of 200mm wafer: $ 80.--Unit price of 300mm wafer: $ 200. Unit price of 300mm wafer: $ 200. --Test wafer / Production wafer ratio: 1/50 Test wafer / Production wafer ratio: 1/50

16

Components Division

Ultimate in Vacuum since 1952Performance Comparison with Conductive Film Thickness Measuring Systems

Eddy Current Type (MESEC)

4-Point Probe Type

Fluorescent X-ray Type

X-ray Interference

Type

Pulse Laser Type

Destructive Dangerous

◎

Non-destructive

×

Contact

× Radioactive

Source

× Radioactive

Source

× High Power

Laser

Measuring Range

◎

30nm~5μm

○

100nm~10μm

◎

10nm~15μm

×

10nm~400nm

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10nm~3.5μm

Measuring Time

(Per Point)

◎

Less than 1 second

○

A few seconds

×

A few minutes

×

A few minutes

○

A few seconds

Spatial Resolution

○

A few mm

○

A few mm

×

A few cm

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A few mm

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A few μm

◎Excellent ○Good 　　×Poor

Components Division


MESECMESEC PerformancePerformance

Non-contact, no wafer damage !Excellent correlation with other measurement methods.Capable of measuring film on top of multi-stacked damascene layers.Minimal loss of production wafersEarly detection of deposition tool problem

Advantages:Advantages:

User friendly:User friendly:Easy to operate.

No consumable parts.No adjustments.

Maintenance free.Reasonable price.

Low CoO and fast amortization can be realized with continuous use

of the MESEC.

Components Division

Ultimate in Vacuum since 1952Application DataApplication Data

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020406080

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MESEC 3D Graph

3.75nmDEV:159.4nmAverage:109.2nmMin:164.3nmMax:ThicknessData:

Sputtering Cu Film 160nm2002/03/07

Sample Name:Date:

X (mm)

Thickness(nm)Y (mm)

Cu Seed Film on 200mm Silicon Wafer　　

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MESEC 3D Graph

6.71nmDEV:134.13nmAverage:120.69nmMin:145.64nmMax:ThicknessData:

ULVACCu Seed Film

Operator:Sample Name:

X (mm)

D(nm)

Y (mm)

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020406080100

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3D Thickness Graph

57.83nmSTDDEV:

1804.06nmAverage:1708.3nmMin:1956.7nmMax:ThicknessData:

UJ25830

Cu ECD Film

Operator:Sample:

X (mm)

Thick

ness(

nm)

Y (mm

)

Cu Plating Film on 200mm Silicon Wafer　　

Detecting Scratch on Wafer

Components Division


Why select the MESEC Why select the MESEC

NonNon--contact, Speedy measurement,contact, Speedy measurement,Excellent repeatability, High accuracyExcellent repeatability, High accuracy

Optimization for processOptimization for process

Test all Test all production wafersproduction wafers Cut costCut cost

(Initial, (Initial, Running, Running,

Monitor wafers)Monitor wafers)

Cost EffectiveCost Effective

Integrating Integrating into depositioninto deposition

tooltool

Improve reliabilityImprove reliability Cost downCost down

Components Division


Global Network　

ULVAC Technologies,Inc.ULVAC Ningbo Co., Ltd.

ULVAC,IncULVAC,Inc

UTECH NewYork

UTECHArizona

UTECHTexas

UTECHCalifornia

ULVAC Taiwan,Inc

ULVAC System Control, Taiwan., Ltd.

ULVAC KOREA, Ltd.ULVAC G.m.b.H

Hong Kong ULVAC Co., Ltd.

UJ: ULVAC,Inc.UTECH: ULVAC Technologies,Inc

India officePenang CSC

UJUJ

Guangzhou officeUJ

Beijing office UJ

ULVAC Shanghai Co., Ltd.

ULVAC Singapore PTE LTD( Jan. 2002 open)

mesec series - american vacuum society · 2019-06-06 · components division ultimate in vacuum...

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