micas department of electrical engineering (esat) design-in for emc on digital circuit october 27th,...
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![Page 1: MICAS Department of Electrical Engineering (ESAT) Design-In for EMC on digital circuit October 27th, 2005 AID–EMC: Low Emission Digital Circuit Design](https://reader030.vdocuments.net/reader030/viewer/2022032709/56649ebb5503460f94bc3e69/html5/thumbnails/1.jpg)
MICASDepartment of Electrical Engineering (ESAT)
Design-In for EMC on digital circuit
October 27th, 2005
AID–EMC: Low Emission Digital Circuit Design
Junfeng ZhouWim Dehaene
KULeuven ESAT-MICAS
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MICASDepartment of Electrical Engineering (ESAT)
Outline
1. Introduction
2. Logic family selection
3. Clock strategy selection (not discuss today due to lack of time) 1. clock skew 2. SSCG 3. Delay cell array approach
4. Low noise power supply – EMI reducer 1. continuous time 2. stability analysis 3. future work
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MICASDepartment of Electrical Engineering (ESAT)
Part I: Introduction
Electro-Magnetic Interference (EMI) and radiated emission have become a major problem for high speed digital circuit,
Most of them are due to power and ground fluctuation.
Although the detailed calculation of EMI noise is rather difficult , we can use the di/dt as the index, since the current loop contributes the EMI.
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MICASDepartment of Electrical Engineering (ESAT)
Part 2: Logic Family Selection
SCMOS PNMOS RSBCMOS
CSL MCML FSCL
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MICASDepartment of Electrical Engineering (ESAT)
Comparison of di/dt ,power and area
Target : Mixed-Mode Automotive Electronics Design
Key aspects : di/dt + Power + Area + Speed
Peak to Peak v alue of di/dt
1.0E+00
1.0E+01
1.0E+02
1.0E+03
1.0E+04
1.0E+05
1.0E+06
1.0E+07
SCMOS PNMOS RSBMOS CSL MCML FSCL
di/dt
[A/s]
Inv erter Power in different logic techniques
0.00E+00
5.00E+01
1.00E+02
1.50E+02
2.00E+02
2.50E+02
SCMOS PNMOS RSBMOS CSL MCML FSCL
Pow
er [
μW]
Inv erter area in different logic techniques
0
0.5
1
1.5
2
2.5
3
3.5
4
SCMOS PNMOS RSBMOS CSL MCML FSCL
Area
[μm
2]
Ring Oscillator of 21-stages
(Static + Dynamic)
Current Steering LogicBut there is static power !!
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MICASDepartment of Electrical Engineering (ESAT)
Detailed comparison of CSL and SCMOS
0 20 40 60 80 100 120 140 160 180
10-6
1x10-5
1x10-4
10-3
Frequency [ MHz ]
Pow
er c
onsu
mpt
ion
[ W ]
CSL dynamic power
CSL static power CSL dynamic power CSL power
(activity=0.5) SCMOS power
(activity=0.5)
SCMOS power activity=0.5
CSL power activity=0.5CSL static power
VDD
=1.5v
Note: The curve of CSL 16-bit RCA was obtained by calculating the real speed F of the circuit, given the different supply current I.
CSL One-bit Adder
IT is a static power problem,Switching off when standby ?
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MICASDepartment of Electrical Engineering (ESAT)
Detailed comparison of CSL and SCMOS
SCMOS
CSL
SCMOS
CSL
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MICASDepartment of Electrical Engineering (ESAT)
Problem with CSL
Mismatch sensitive, annoying for standard cells rather slow/power hungryNot full swing
Matching required!
M1 > M3
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MICASDepartment of Electrical Engineering (ESAT)
Can we do it better ?
C-CBL:
sizing for optimal current balance
is really difficult ,process dependent
CBL
[Albuquerque, E.F.M.; Silva, M.M., Current-balanced logic for mixed-signal IC's]
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MICASDepartment of Electrical Engineering (ESAT)
Solution- Enhanced current steering logic
Still current source basing Increase in logic level, hence increase the robustness Reduced output capacitance, hence the speed is increased
Fig.3 E-CSL inverter
Minimum size
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MICASDepartment of Electrical Engineering (ESAT)
Comparison of CSL, C-CBL, ECSL and SCMOS
10M 100M 1G 10G1
10
100
1k
10k
100k
1M
10M
100M
CSL C-CBL E-CSL SCMOS
VDD
=3 vC
LOAD=5 fF
F [Hz]
di/d
t p-
p [A
/s]
Fig.5 di/dt vs. frequencyFig.4 power vs. frequency
10M 100M 1G 10G1E-7
1E-6
1E-5
1E-4
1E-3 Area@500 MHz
CSL 7.2 um2
C-CBL 2.1 um2
E-CSL 1.53 um2
SCMOS 6.5 um2
VDD
=3 vC
LOAD=5 fF
Pow
er [w
]
F [Hz]
CSL C-CBL E-CSL SCMOS
Ring Oscillator of 21-stages
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MICASDepartment of Electrical Engineering (ESAT)
di/dt performance vs. process variation
10M 100M 1G 10G10
100
1k
10k
100k
1M
10M
100MV
DD=3 v
CLOAD
=5 fF
TT FF FS SF SS
F [Hz]
di/d
t p
-p [
A/s
]
CSL
10M 100M 1G 10G10
100
1k
10k
100k
1M
10M
100MV
DD=3 v
CLOAD
=5 fF
TT FF FS SF SS
F [Hz]
di/d
t p
-p [
A/s
]
E-CSL
10M 100M 1G 10G10
100
1k
10k
100k
1M
10M
100MV
DD=3 v
CLOAD
=5 fF
TT FF FS SF SS
F [Hz]
di/d
t p
-p [
A/s
]
C-CBL
10M 100M 1G 10G10
100
1k
10k
100k
1M
10M
100MV
DD=3 v
CLOAD
=5 fF
TT FF FS SF SS
di/d
t p
-p [
A/s
]
F [Hz]
SCMOS
Fig.6 di/dt vs. process corner
MAX di/dt change
MIN di/dt change
Ring Oscillator of 21-stages
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MICASDepartment of Electrical Engineering (ESAT)
Conclusion of Low noise Logic Families
Winner is E-CSL
CSL,E-CSL show a smaller area per logic function for complex digital gates and systems compared to SCMOS logic technique.
Current source ensures the major di/dt reduction, Process variation sensitivity also becomes better due to
the dominance of current source, E-CSL gives comparable di/dt performance with CSL, E-CSL is Faster and Less power consuming than CSL due
to the lower area and lower capacitance. Static power consumption remains the challenge for wide
application of the CSL,E-CSL technique in very large digital systems. Can be solved by using power down strategies, which is highly application dependent
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MICASDepartment of Electrical Engineering (ESAT)
Part 4: Low Noise Power Supply design
However 2 problems still remain:• Static power consumption• New logic family standard cell library must be designed and characterised. (large NRE cost, risk)
?? Is there any global approach ??
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MICASDepartment of Electrical Engineering (ESAT)
Principles of Low Noise Power supply
Fig.9 Diagram of Low noise power supply
1. Current source ensures the major di/dt reduction
2. Do not give more current than the circuit needs, i.e. minimize the static current
3. Slow varying is key to EMC success
1. Can be done with switched or continuous mode. Both are studied,
2. Continuous mode potentially has better di/dt suppression.
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MICASDepartment of Electrical Engineering (ESAT)
Continuous mode Power Delivery
Fig.13 Continuous time power delivery system
Determine the switching speed, Hence determine the di/dt
Energy reservoirwhen slow Switching
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MICASDepartment of Electrical Engineering (ESAT)
Functionality Simulation
Fig.14 Functionality simulation of continuous time power delivery system
continuous time OTA feedback loop stable
Idd
di/dt
Vcontrol
VDD_input 9v
2nd order under damped behaviour , still under study
VDD_input
Vcontrol
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MICASDepartment of Electrical Engineering (ESAT)
Comparison with standard CMOS
Fig.15 di/dt and FFT comparison with standard CMOS
w/o CT, 3.3V only
12v supply current
12v supply current di/dt p-p = 1.0x107 A/s
di/dt w/o CT, di/dt p-p =1.51x1011 A/s
162 times= 44dB
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MICASDepartment of Electrical Engineering (ESAT)
Stability analysis - Small signal analysis
1Gota
pCaux
2
1
12
tan * 1
3, 4
1
2
2 1 *( 3 )*
( tan 1* )* * 3* *
Gotap
CauxGds
pC k M Cgd
p p
gmM
gm
p Gds gm Gdg Caux
GBW C k Cgd M Gm gm M Gdg
dominant pole
second-dominant pole
high frequency poles
mirror factor
p1
p2
p4
p3
>3 for > 72° phase margin(2nd order system)
Approximation:
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MICASDepartment of Electrical Engineering (ESAT)
Stability analysis- Calculation vs. Simulation
Maple Spectre --------------------------------------------------------------- DC gain(dB): 97.72 97.25 --------------------------------------------------------------- Phase Margin(degree): 62.5 49 --------------------------------------------------------------- Gain Crossover(Hz): 325K 275K ---------------------------------------------------------------- P2/GBW: 1.275 1.264----------------------------------------------------------------
(dB)
(deg)
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MICASDepartment of Electrical Engineering (ESAT)
Trade-off in Ctank and Caux
P2/GBW P2/GBW
3 3
22 1 *( 3 )*
( tan 1* )* * 3* *
p Gds gm Gdg Caux
GBW C k Cgd M Gm gm M Gdg
Ctank=100pF Caux=100pF
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MICASDepartment of Electrical Engineering (ESAT)
Current pulse step response
910 ( / )di
A sdt
51.35 10 ( / )di
A sdt
An input current step of 1 mA and100-ps rise time was used for the calculation and simulation
910 ( / )di
A sdt
Can be improved if more stable
~104 reduction !!
51.38 10 ( / )di
A sdt
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MICASDepartment of Electrical Engineering (ESAT) Coupling problem !
Cgs1,2 ≈ Cgd1
∆ VDD_input
∆ Vbias
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MICASDepartment of Electrical Engineering (ESAT)
Future work
Improve circuit structure to reduce coupling between output node and gate of the current source transistor
Figure out supply current behaviour of a typical AMIS
digital block
Add a real voltage regulator into consideration
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MICASDepartment of Electrical Engineering (ESAT)
Questions
Thank you for your attention