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Form #: CSI-D-686 Document 005 Micross US (Americas) 407.298.7100 Micross UK (EMEA & ROW) +44 (0) 1603 788967 [email protected] www.micross.com March 29, 2016 • Revision 2.6 MYX4DDR264M16HW Features • Tin-lead ball metalurgy • V DD = 1.8V ±0.1V, V DDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture Duplicate output strobe (RDQS) option for x8 DLL to align DQ and DQS transitions with CK 8 internal banks for concurrent operation • Programmable CAS latency (CL) Posted CAS additive latency (AL) WRITE latency = READ latency - 1 t CK Selectable burst lengths (BL): 4 or 8 • Adjustable data-output drive strength • 64ms, 8192-cycle refresh • On-die termination (ODT) Supports JEDEC clock jitter specification • 8D response time Options Code Configuration 64M x 16 (8M x 16 x 8 banks) 64M16 Package: FBGA (Sn63 Pb37) BG 84-ball FBGA (8mm x 12.5mm) HR Die Rev :H 84-ball FBGA (8mm x 12.5mm) NF Die Rev :M Timing - cycle time 2.5ns @ CL = 5 (DDR2-800) -25E Self refresh Standard None Low-power L Operating temperature Industrial (-40°C T C +95°C; IT -40°C T A +85°C;) Military (-55°C T C +125°C) XT Part Marking: Label (L), Dot (D) Table 1: Key Timing Parameters Speed Grade Data Rate (MT/s) t RC (ns) CL=3 CL=4 CL=5 CL=6 CL=7 -25E 400 533 800 800 n/a 55 1Gb - 64M x 16 DDR2 SDRAM Advanced information. Subject to change without notice. Micron Part No. MT47H64M16HR, Die Rev:H (NOTE: for IT Temp) Micron Part No. MT47H64M16NF, Die Rev:M (NOTE: for XT Temp)

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  • Form #: CSI-D-686 Document 005

    Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com

    March 29, 2016 • Rev is ion 2.6

    MYX4DDR264M16HW

    Features

    • Tin-lead ball metalurgy

    • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V

    • JEDEC-standard 1.8V I/O (SSTL_18-compatible)

    • Differential data strobe (DQS, DQS#) option

    • 4n-bit prefetch architecture

    • Duplicate output strobe (RDQS) option for x8

    • DLL to align DQ and DQS transitions with CK

    • 8 internal banks for concurrent operation

    • Programmable CAS latency (CL)

    • Posted CAS additive latency (AL)

    • WRITE latency = READ latency - 1 tCK

    • Selectable burst lengths (BL): 4 or 8

    • Adjustable data-output drive strength

    • 64ms, 8192-cycle refresh

    • On-die termination (ODT)

    • Supports JEDEC clock jitter specification

    • 8D response time

    Options Code

    • Configuration

    64M x 16 (8M x 16 x 8 banks) 64M16

    • Package: FBGA (Sn63 Pb37) BG

    84-ball FBGA (8mm x 12.5mm) HR Die Rev :H

    84-ball FBGA (8mm x 12.5mm) NF Die Rev :M

    • Timing - cycle time

    2.5ns @ CL = 5 (DDR2-800) -25E

    • Self refresh

    Standard None Low-power L

    • Operating temperature

    Industrial (-40°C ≤ TC ≤ +95°C; IT -40°C ≤ TA ≤ +85°C;)

    Military (-55°C ≤ TC ≤ +125°C) XT

    • Part Marking: Label (L), Dot (D)

    Table 1: Key Timing Parameters

    Speed GradeData Rate (MT/s)

    tRC (ns)CL=3 CL=4 CL=5 CL=6 CL=7

    -25E 400 533 800 800 n/a 55

    1Gb - 64M x 16 DDR2 SDRAMAdvanced information. Subject to change without notice.

    Micron Part No. MT47H64M16HR, Die Rev:H (NOTE: for IT Temp)Micron Part No. MT47H64M16NF, Die Rev:M (NOTE: for XT Temp)

    mailto:sales%40micross.com?subject=http://www.micross.com/?utm_source=Micross%20PDF&utm_medium=Flyer_MYX4DDR264M16HW&utm_campaign=Micross.comhttp://www.micross.com/?utm_source=Micross%20PDF&utm_medium=Flyer_MYX4DDR264M16HW&utm_campaign=Micross.com

  • Form #: CSI-D-686 Document 005

    Micross US (Americas) • 407.298.7100Micross UK (EMEA & ROW) • +44 (0) 1603 788967

    [email protected]

    MYX4DDR264M16HW • 1Gb - 64M x 16 DDR2 SDRAMAdvanced information. Subject to change without notice.

    March 29, 2016 • Rev is ion 2.6

    Figure 1: 84-Ball FBGA - x16 Ball Assignments (Top View)Figure 7: 84-Ball FBGA – x16 Ball Assignments (Top View)

    V DDQ

    DQ15

    V DDQ

    DQ13

    V DDQ

    DQ7

    V DDQ

    DQ5

    V DD

    ODT

    V DD

    V SS

    UDQS#/NU

    V SSQ

    DQ8

    V SSQ

    LDQS#/NU

    V SSQ

    DQ0

    V SSQ

    CK

    CK#

    CS#

    A0

    A4

    A8

    RFU

    V SSQ

    UDQS

    V DDQ

    DQ10

    V SSQ

    LDQS

    V DDQ

    DQ2

    V SSDL

    RAS#

    CAS#

    A2

    A6

    A11

    RFU

    V SS

    UDM

    V DDQ

    DQ11

    V SS

    LDM

    V DDQ

    DQ3

    V SS

    WE#

    BA1

    A1

    A5

    A9

    RFU

    NC

    V SSQ

    DQ9

    V SSQ

    NC

    V SSQ

    DQ1

    V SSQ

    V REF

    CKE

    BA0

    A10

    A3

    A7

    A12

    V DD

    DQ14

    V DDQ

    DQ12

    V DD

    DQ6

    V DDQ

    DQ4

    V DDL

    BA2

    V SS

    V DD

    A

    B

    C

    D

    E

    F

    G

    H

    J

    K

    L

    M

    N

    P

    R

    1 2 3 4 6 7 8 95

    1Gb: x4, x8, x16 DDR2 SDRAMBall Assignments and Descriptions

    PDF: 09005aef821ae8bf1GbDDR2.pdf – Rev. X 10/11 EN 16 Micron Technology, Inc. reserves the right to change products or speci�cations without notice. 2007 Micron Technology, Inc. All rights reserved.

    mailto:sales%40micross.com?subject=http://www.micross.com/?utm_source=Micross%20PDF&utm_medium=Flyer_MYX4DDR264M16HW&utm_campaign=Micross.comhttp://www.micross.com/?utm_source=Micross%20PDF&utm_medium=Flyer_MYX4DDR264M16HW&utm_campaign=Micross.com

  • Form #: CSI-D-686 Document 005

    Micross US (Americas) • 407.298.7100Micross UK (EMEA & ROW) • +44 (0) 1603 788967

    [email protected]

    MYX4DDR264M16HW • 1Gb - 64M x 16 DDR2 SDRAMAdvanced information. Subject to change without notice.

    March 29, 2016 • Rev is ion 2.6

    Figure 2: Package Dimensions 84-Ball FBGA Package (8mm x 12.5mm) – x16; “HR” Die Rev:H

    Packaging

    Package Dimensions

    Figure 8: 84-Ball FBGA Package (8mm x 12.5mm) – x16

    1.8 CTRNonconductive

    overmold

    0.155

    Seating plane

    0.12 A

    123789

    Ball A1 ID Ball A1 ID

    A

    0.25 MIN

    1.1 ±0.1

    6.4 CTR

    8 ±0.1

    0.8 TYP

    11.2 CTR

    12.5 ±0.1

    84X Ø0.45Dimensions applyto solder ballspost-reflow onØ0.35 SMD ball pads.

    0.8 TYP

    ABCDEFGHJKLMNPR

    Exposed gold plated pad1.0 MAX X 0.7 nominal.

    Notes: 1. All dimensions are in millimeters.2. Solder ball material: SAC305 (96.5% Sn, 3% Ag, 0.5% Cu) or leaded Eutectic (62% Sn,

    36%Pb, 2% Ag).

    1Gb: x4, x8, x16 DDR2 SDRAMPackaging

    PDF: 09005aef821ae8bf1GbDDR2.pdf – Rev. X 10/11 EN 19

    Micron Technology, Inc. reserves the right to change products or specifications without notice.� 2007 Micron Technology, Inc. All rights reserved.

    Packaging

    Package Dimensions

    Figure 8: 84-Ball FBGA Package (8mm x 12.5mm) – x16

    1.8 CTRNonconductive

    overmold

    0.155

    Seating plane

    0.12 A

    123789

    Ball A1 ID Ball A1 ID

    A

    0.25 MIN

    1.1 ±0.1

    6.4 CTR

    8 ±0.1

    0.8 TYP

    11.2 CTR

    12.5 ±0.1

    84X Ø0.45Dimensions applyto solder ballspost-reflow onØ0.35 SMD ball pads.

    0.8 TYP

    ABCDEFGHJKLMNPR

    Exposed gold plated pad1.0 MAX X 0.7 nominal.

    Notes: 1. All dimensions are in millimeters.2. Solder ball material: SAC305 (96.5% Sn, 3% Ag, 0.5% Cu) or leaded Eutectic (62% Sn,

    36%Pb, 2% Ag).

    1Gb: x4, x8, x16 DDR2 SDRAMPackaging

    PDF: 09005aef821ae8bf1GbDDR2.pdf – Rev. X 10/11 EN 19

    Micron Technology, Inc. reserves the right to change products or specifications without notice.� 2007 Micron Technology, Inc. All rights reserved.

    Notes: 1. All dimensions are in millimeters. 2. Solder ball material: Sn63/Pb37

    Figure 3: Package Dimensions 84-Ball FBGA Package (8mm x 12.5mm) – x16; “NF” Die Rev:M

    Packaging

    Package Dimensions

    Figure 7: 84-Ball FBGA Package (8mm x 12.5mm) – x16; "NF" Die Rev :M

    1.8 CTRNonconductive

    overmold

    0.155

    Seating plane

    0.12 A

    123789

    Ball A1 ID(covered by SR)

    Ball A1 ID

    A

    0.28 MIN

    1.1 ±0.1

    6.4 CTR

    8 ±0.1

    0.8 TYP

    11.2 CTR

    12.5 ±0.1

    84X Ø0.47Dimensions applyto solder ballspost-reflow onØ0.42 SMD ball pads.

    0.8 TYP

    ABCDEFGHJKLMNPR

    Notes: 1. All dimensions are in millimeters.2. Solder ball material: SAC305 (96.5% Sn, 3% Ag, 0.5% Cu).

    1Gb: x8, x16 Automotive DDR2 SDRAMPackaging

    PDF: 09005aef85a711f41gb_ddr2_ait-aat_u88b.pdf – Rev. B 10/14 EN 17

    Micron Technology, Inc. reserves the right to change products or specifications without notice.© 2014 Micron Technology, Inc. All rights reserved.

    Packaging

    Package Dimensions

    Figure 7: 84-Ball FBGA Package (8mm x 12.5mm) – x16; "NF" Die Rev :M

    1.8 CTRNonconductive

    overmold

    0.155

    Seating plane

    0.12 A

    123789

    Ball A1 ID(covered by SR)

    Ball A1 ID

    A

    0.28 MIN

    1.1 ±0.1

    6.4 CTR

    8 ±0.1

    0.8 TYP

    11.2 CTR

    12.5 ±0.1

    84X Ø0.47Dimensions applyto solder ballspost-reflow onØ0.42 SMD ball pads.

    0.8 TYP

    ABCDEFGHJKLMNPR

    Notes: 1. All dimensions are in millimeters.2. Solder ball material: SAC305 (96.5% Sn, 3% Ag, 0.5% Cu).

    1Gb: x8, x16 Automotive DDR2 SDRAMPackaging

    PDF: 09005aef85a711f41gb_ddr2_ait-aat_u88b.pdf – Rev. B 10/14 EN 17

    Micron Technology, Inc. reserves the right to change products or specifications without notice.© 2014 Micron Technology, Inc. All rights reserved.

    mailto:sales%40micross.com?subject=http://www.micross.com/?utm_source=Micross%20PDF&utm_medium=Flyer_MYX4DDR264M16HW&utm_campaign=Micross.comhttp://www.micross.com/?utm_source=Micross%20PDF&utm_medium=Flyer_MYX4DDR264M16HW&utm_campaign=Micross.com