microwave techniques group işık university microwave techniques group newcom wpr3 contribution...
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WPR3
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Işık University MiMicrowave Techniquescrowave Techniques G Grouproup
Newcom WPR3 Contribution Areas
Design of Front-End Building Blocks •Filters, •Matching Networks, •Amplifiers, •Phase Shifters.
Integration of Microwave Front-Ends.
Power Amplifier Linearization.
Işık University
MiMicrowave Techniquescrowave Techniques G Grouproup
http://www.isikun.edu.tr/~microwave/
Prof. Dr. B. Sıddık Yarman ([email protected])
Prof. Dr. Ahmet Aksen ([email protected])
Dr. Ali Kılınç
Dr. Ebru Gürsu Çimen
Hacı Pınarbaşı
Metin Şengül
Microwave Circuits Education at Işık University•Courses
•Microwave Laboratory
•Research Areas
Microwave CoursesMicrowave Courses
EE 475 Microwave Communications (3 hrs/week + Lab.):Transmission line theory, transmission lines and waveguides, impedance transformation and matching techniques, microwave network analysis and matrix representations, generalized scattering parameters, signal flow graphs, modal analysis, power dividers, introduction to microwave communication systems and microwave propagation.
EE 476 Wireless Communications (3 hrs/week ):Design and analysis of wireless communication systems, with an emphasis on understanding the unique characteristics of these systems. Topics include: cellular planning, mobile radio propagation and path loss, characterization of multipath fading channels, modulation and equalization techniques for mobile radio systems, multiple access alternatives, common air protocols and standards.
EE 536 Microwave Circuit Design for Wireless Communication(3hrs/week)
Radio Transceiver Technology Requirements, RF Component Requirements for Transceivers; Filter, Amplifier, Mixer, Frequency Synthesizer and Dublexer Requirements. RF/Microwave Circuit Implementation Options; Semiconductor Devices and Passive Devices. Design of microwave filters and impedance matching networks; Analytic and semi-analytic approaches; Low-Power Radio Frequency ICs for Broadcast Radio Receivers and Wireless Celular Telephone Trancievers
EE 620 Advanced Microwave Circuit Design (3 hrs/week )Characterization of linear circuits at microwave frequencies: Brune functions, Piloty functions, realizability conditions for lossless networks, scattering description of lossless two-ports. Design of microwave filters, distributed Richards frequency transformation and theorem, Kroda’s identities, microwave filter design, broadband matching: Analytic and semianalytic approaches, mixed lumped-distributed network design.
EE 625 Microwave Amplifier Desing (3 hrs/week )Active circuits at microwave frequencies: Noise parameters, SNR, noise figure, noise temperature measurements, microwave transistor amplifier design gain stability, microwave transistor oscillator design, numerical methods for multistage amplifier design.
This laboratory provides facilities in undergraduate and graduate training and research in the field of microwave engineering and antenna systems and applications. Various passive and active microwave components, basic antenna types and measurement setups operating at microwave frequencies of up to 10 GHz are among the basic facilities offered in this laboratory.
Hardware Facilities Lab-Volt Microwave Training Set (10.5 GHz)HP-Agilent Spectrum Analyzer (9 KHz-1.8 GHz)Lab-Volt Gunn Oscillator (10.5 GHz)RF Cable Assemblies and Connectors (10 MHz to 10 GHz)Waveguide Hardware (2 GHz to 10 GHz)RF Components : (800 MHz to 10 GHz) Amplifiers, Mixers, Detectors, Couplers, Power Dividers,Terminations,Attenuators, Horn Antennas
Software FacilitiesAutoCad, PCB Design Software, MATLAB, Microwave Office, SONNET(EM simulation), RFT: Microwave Circuit Design and Optimization,FILPRO(Filter Design) APLAC RF Design Tool
Microwave Microwave LaboratoryLaboratory
Design of Broadband Matching Networks Design of Microwave Amplifiers Multivariable Network Characterization
(Mixed Lumped-distributed Networks) Data Modelling Design of Broadband Phase Shifters CAD Tools for Broadband Microwave Circuit Design
Real Frequency Technique (RFT) ToolboxesRFT) Toolboxes Modelling Toolbox WWideband MMicrowave CCircuit DDesigner (WMCD) (WMCD)
Integrated Toolbox
Research Research AreasAreas
Design of Broadband Matching Networks
•Broadband Matching ProblemBroadband Matching Problem
•Analytic vs Real Frequency Analytic vs Real Frequency TechniquesTechniques
•Real Frequency Broadband Matching TechniquesReal Frequency Broadband Matching Techniques
Lossless
NZ L
P AZ G
E G
+
P L
Power transmission problem between a complex generator and load
A
L
P
PT )(
Gain-Bandwith Optimization
Broadband Matching ProblemBroadband Matching Problem
Analytic Theory An analytic form of transfer function is chosen,
which should include load network Applicable to simple problems
Real frequency techniques No need to choose circuit topology No need to choose transfer function Well behaved numeric Experimental load data is directly processed
Analytic versus Real Frequency Analytic versus Real Frequency TechniquesTechniques in Broadband in Broadband
MatchingMatching
Line Segment Technique (Carlin, 1977) Parametric Approach (Fettweis, 1979) Simplified Real Frequency Technique (Yarman, 1982) Direct Computational Technique (Yarman & Carlin 1983) RFT for Mixed Lumped-Distributed Circuits (Aksen & Yarman, 1994) ....
Real Frequency Broadband Real Frequency Broadband Matching TechniquesMatching Techniques
01
( ) ( )n
i ii
R R a R
,0
,
,1
)(a
1i
i1i1ii
1i
i
i
i
i
dyy
yb
iii
1
ln)(
1)(
1
R
R()
k-1 k n
Rk
Rn=0
Rk-1
1
( ) ( )n
i ii
X b R
Unknown real part R() is represented as a number of straight-line segments
N R
jXRZ
)()( RX H
Optimize TPG
22 ))()(())()(()()(4
)(
LL
L
XXRRRR
T
Line Segment TechniqueLine Segment Technique
Design Parmeters:Ri
•Based on parametric representation of Brune functions, analytic form of the impedance function is directly generated,
•The direct control of transmission zeros is ensured,
•Computational complexity is reduced,
•The gain function is explicit in terms of free parameters.
Parametric ApproachParametric Approach
N R
)( pZZ is minimum reactive
n
ii
i
pp
BB
pd
pnpZ
10)(
)()(
n
ikk
ikni
ii
i
ppDp
pfpfB
1
222 )(
)()(
nfD
nf
B
n
deg,....1
deg,.......0
2
0
f(p) denotes transmission zeros of N
n
1i ippnDpd )()(
d(p) is strictly Hurwitz
Optimize TPG 22 ))()(())()(()()(4
)(
LL
L
XXRRRR
T
Design Parameters:p0,p1,...pn singularities of the network; Roots of the driving point impedance
Simplified Real Frequency Simplified Real Frequency TechniqueTechnique
N
S 1 S 2S LSG
ZG
Z L
R 2=1R 1=1
1 2
E+
)(/)(11
pgphS )(/)(12
pgpfS
)(/)(21
pgpfS )(/)(22
pgphS
g(p)g(-p) = h(p)h(-p) + f(p)f(-p)
Belevitch Representation of Scattering Parameters:
Losslessness Equation:
Initialize f and h g S(p) parameters
contruct contruct
Optimize TPG 2
)()()()(
2)()2
1)(2
1(
jgGS-jhLσSGSjhjg
jfLSGST
Design Parameters:h0,h1,...hn coefficients of the h(p) polynomial
Direct Computational TechniqueDirect Computational Technique
n
n
o
wDwDDA
wR22
10
2 ...)(
N
S
Z L
1 2
1
Z
2
1
Z 2=R2+jX 2
N
Z in
ZG
ZL
1 2
E+
N
Z in
ZG
ZL
1 2
E+
Initialize Di,A0
Generate Z2(p) via Gewertz Procedure
n
n
n
n
pbpbbpapaa
pDpN
pZ
....
....)()(
)(10
10
2
Optimize TPG2
1
2
1
2
|1|)||1)(||1(
)(SS
SST
G
G
11
G
G
G ZZ
S11
L
L
L ZZ
SD
fH
ZZ
ZZ
H
HS
L
L *
2
*2
*1
Design Parameters:A0,D0,D1,...Dn coefficients of the R2(w)=Re[in(jw)]
Design of Distributed Structures
Design of broadband microwave networks; Filters, Matching Networks and Amplifiers with Transmission Line structures.
Available Real Frequency Design techniques can directly be employed for distributed designs by making use of Richards’ transformation
Planar implementation techniques; Microstrip, Stripline,
coplanar line, suspended substrate in MIC and MMIC
ptanh
Network SynthesisNetwork Synthesis
Na Nb
N
• Darlington Synthesis for Lumped Networks• Richards Synthesis for Distributed Networksor • Generalized Network Synthesis via Transfer Matrix Factorization
Decomposing the lossless reciprocal two-port N into two cascade connected lossless two-port Na and Nb.
T=TaTb
bbb
bbb
bb
aaa
aaa
aa gh
hg
fT
gh
hg
fT
*
*
*
* 1,
1
Mixed Lumped-Distributed Mixed Lumped-Distributed CircuitsCircuits
( ( Multivariable Network Characterization )Multivariable Network Characterization )
Multivariable description and insertion loss synthesis of mixed element structures
Parasitics, discontinuities and device to medium interface modelling
Computer aided design and simulation of MIC layouts
,pZZ
,pSS
jp ptanh :Delay length of unit
elements
Scattering Description Scattering Description iin Two n Two VVariableariabless
, , are real polynomials is a Scattering Hurwitz polynomial is monic, is a unimodular constant
),( pg),( pf ),( pg ),( ph
),( ph
gTppg ),(
hTpph ),(
pnT pppp 21 nT 21
nnnn
n
n
g
pppggg
ggg
ggg
10
11110
00100
nnnn
n
n
h
ppphhh
hhh
hhh
10
11110
00100
and
where , and
Boundary Conditions Transmission Zeros : Lumped Prototype : Distributed Prototype : Connectivity Information
2/20 )1)((),( npfpf
)0,(),0,(),0,( phpgpfS p
),0(),,0(),,0( hgfS
),(),(),(),(),(),( pfpfphphpgpg
g g g h f h h f fkk l
l k ll
k
k kk l
l
k
l k l l k l02
0 0 20
1
02
02
0
1
0 0 2 0 0 22 1 2 1, , , , , , , , ,( ) ( ) ( )
( , ,....., )k n0 1
( ) ( ), , , , , ,
1 12 1 2 1 2 1
0000
i j lj l i j k l
i j lj l i j k l j l i j k l
l
k
j
i
l
k
j
i
g g h h f f
( , ,..., , , ,....., )i n k np 1 3 2 1 0 1 1
i
j
k
llkjiljlkjilj
lkkjikjkjikj
jii
j
k
llkjilj
lkkjikj
ji ffhhffhhgggg0
1
02,,2,,,,,,
0
1
02,,,, )1(2)1())1(2()1(
( , ,..., , , ,....., )i n k np 2 4 2 2 0 1
)()1(2)1(2 2,,2,,
1
0
2,
2,
1
02,,
2, lknlnlknln
k
l
lkknkn
k
llknln
lkkn ppppppppp
ffhhfhggg
( , ,....., )k n0 1
Losslessness ConditionLosslessness Condition
Fundamental Equation Set (FES)
ExampleExample : : Low-Pass Ladder with Unit Low-Pass Ladder with Unit ElementsElements
njnigij 0,0,0 Boundary Conditions
1)0,()0,()0,()0,( phphpgpg
n2 )1(),0(h),0(h),0(g),0(g: Strictly Hurwitz
Connectivity Information
1001100111 hhggg
0 klkl hg
klkl gh
1/ 00 pp nn gh
1 nlk nlk ,....1,0,
1 nlk nlk ,....1,0, 11 nn p
),0(),0,( gpgfor
for
if
Multivariable Characterization of Regular Multivariable Characterization of Regular Mixed Element Two-PortsMixed Element Two-Ports
Explicit design equations
Low-Pass,
Symmetrical,
High-Pass,
Band-Pass
Impedance Description in Impedance Description in Two Two VVariableariabless
( , )( , )( , )
Z pn pd p
0 0( , ) ( ) , ( , ) ( )
n ni i
i ii i
n p N p d p D p
0 0( ) , ( )
p pn nj j
i ji i jij j
D p D p N p N p
C1Z1
Z ( p , λ)
LZ1 1ΩC2
Boundary ConditionsBoundary Conditions/ 22
0( , ) ( )(1 )nf p f p Transmission Zeros:
Lumped Prototype:1 0
1
( ,0)( ,0)
( ,0)
pni
ii
Bn pZ p B
d p p p
Distributed Prototype:1 0
1
(0, )(0, )
(0, )
ni
ii
CnZ C
d
0 020
2 2 2
( 1)( )
0 , deg( ) ( ),
1/ ,deg( )
p
pi ii n
n pi n k i
kk i
f nf p f pB B
D f np D p p
/ 22(0, ) (1 )nf
0( ,0) ( )f p f p
Even Part ConditionEven Part Condition
1 1
1
( , ) ( , ) ( , ) ( , )( , )
2 ( , ) ( , )Z p Z p f p f p
Ev Z pd p d p
0( , ) ( )
ni
ii
f p F p
0( )
pnj
i jij
F p F p
Transmission Zeros:
Even Part constraint: ( , ) ( , ) ( , ) ( , )
2 ( , ) ( , )
n p d p n p d p
f p f p
Frequency (GHz)
1 1.2
1.4
1.6
1.8
2
15
16
17
18
19
20
21
Transducer Power Gain (dB)
MATLABAWR
Design Example:Single Stage Amplifier
CAP
C=
ID=
1.3 pF
C2
IND
L=
ID=
1.814 nH
L1 IND
L=
ID=
3.777 nH
L2 IND
L=
ID=
4.32 nH
L3 IND
L=
ID=
3.246 nH
L4
TLIN
F0=
EL=
Z0=
ID=
15.78 GHz
90 Deg
42.36 Ohm
TL1 TLIN
F0=
EL=
Z0=
ID=
15.78 GHz
90 Deg
49.21 Ohm
TL2 TLIN
F0=
EL=
Z0=
ID=
15.78 GHz
90 Deg
58.28 Ohm
TL3 TLIN
F0=
EL=
Z0=
ID=
15.78 GHz
90 Deg
52.56 Ohm
TL4
1 2
SUBCKT
NET=
ID=
"S_Parameters"
AM012MXQF PORT
Z=
P=
50 Ohm
1
PORT
Z=
P=
50 Ohm
2 CAP
C=
ID=
2.3 pF
C1
Front – End Equalizer
22
2
3 22
2 2
22
2
( , )( , )
( , )
( , ) (0.6148 1.3484 1.4053 1)
(2.7302 3.4821 1.8313) (1.765 1.161)
( , ) (0.6474 1.105 1) (2.2035 2.196)
0.8608
n pZ p
d p
n p p p p
p p p
d p p p p
Back – End Equalizer
22
2
3 21
2 2
21
2
( , )( , )
( , )
( , ) (0.7156 0.8858 1.8967 1)
(3.2864 2.9152 2.2168) (1.482 1.1087)
( , ) (0.6592 0.816 1) (2.319 1.809)
0.9019
n pZ p
d p
n p p p p
p p p
d p p p p
Symmetrical Mixed Element Structures
Symmetrical Mixed-Element Lossless Two-Ports Symmetrical Interconnect Models Symmetrical Two-port Characterization Design Example
Symmetrical Lossless Two-Ports Constructed with Mixed Elements
C 2 Z2 C 1 Z1 C 1Z2 C 2
Typical ApplicationsTypical Applications
•MMicrowave amplifiers icrowave amplifiers andand antenna matching networks antenna matching networks,,
•RF front-end interstage RF front-end interstage interconnectinterconnect modelling modelling of high of high
speed, high frequency analog/digital systemsspeed, high frequency analog/digital systems
Symmetrical Interconnect Models
•AAssuressuress the sharp roll-off on the performance the sharp roll-off on the performance
characteristicscharacteristics,,
•FFacilitate the production of the same value elements acilitate the production of the same value elements
employing the MMIC or VLSI technologyemploying the MMIC or VLSI technology,,
•LLeads to savings in both design and manufacturingeads to savings in both design and manufacturing
efforteffort,,
•RReduce the requirededuce the required execution time and memoryexecution time and memory..
Symmetrical Two-port CharacterizationSymmetrical Two-port Characterization
hh((p,p,)) even or odd polynomial even or odd polynomial
hh((p,p,)) polynomial polynomial::
Generate Generate ΛΛHH, , ΛΛGG in terms of properly selected independent in terms of properly selected independent
coefficient set coefficient set hhijij
Construct Construct hh((p, p, )),, gg((p, p, )) and hence and hence S(S(pp, , ))
,, p22
Sp11
S
,, phph
pn
0i
n
0j
jipijhph ,
jifor0
jiforijhijh
is odd
is even
Design Example:Design Example:Two Stage AmplifierTwo Stage AmplifierScattering Parameters of the 0.3m Low-noise Gate GaAs MESFET NE76000 Biased at VDS = 3 V, IDS = 10 mA
Freq.GHz
s11
m p
s21
m p
s12
m p
s22
m p
2.03.04.05.06.07.08.09.0
10.0
0.99 -270.97 -390.95 -500.92 -610.89 -700.87 -780.86 -870.83 -960.81 -104
3.19 1583.08 1482.95 1382.81 1292.67 1202.55 1132.45 1042.33 972.24 90
0.04 740.06 660.07 590.09 510.09 470.10 410.11 360.11 300.12 29
0.67 -160.66 -230.64 -300.62 -360.60 -420.59 -470.58 -530.57 -580.57 -63
Coefficients of Equalizers
8863.105205.0
03784.10H
8863.19817.15205.0
000.14290.20000.1G
6065.204949.0
08592.10H
6065.22715.24949.0
0000.17307.20000.1G
3766.103765.00
09160.305094.0
2332.006678.20
H
3766.14398.13765.00
4782.14621.54263.35094.0
0268.11765.30584.40000.1
G
Input matching network:
Interstage matching network:
Output matching network:
1 2NEC76000
1 2NEC76000
1 2
Input matchingnetwork
1 2
Interstage matchingnetwork
1 2
Output matchingnetwork
Z= 50 Ohm Z= 50 Ohm
Z0
50 Ohm
Z0
C50 Ohm 50 Ohm 50 Ohm
CC
Z1 Z1Z2
Input InterstageZ0= 95.1842Ω C= 0.33136pF
Z0 = 114.7467 ΩC = 0.31506pF
Z1= 95.6074 ΩZ2= 145.0932 ΩC = 0.16215pF
Output
Transducer Power Gain
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 10
5
10
15
20
25
Frequency GHz
Gain dB
Input Gain
Performance of amplifier
Design of Broadband Microwave Amplifiers
•Broadband Amplifier DesignBroadband Amplifier Design
•Design IssuesDesign Issues
• Front and back equalizer designFront and back equalizer design
•Multistage Amplifier Design
•Power Amplifier design
Broadband Amplifier DesignBroadband Amplifier Design
Design Issues
Gain-Bandwidth Constraints
Performance criteria (Gain, Noise Figure, SWR,
Dynamic Range, Linearity )
Numerical transistor data utilization and modelling
Design of front-end, back-end and interstage equalizers
Power amplifier design
Hybrid/MIC/MMIC Implementation
Front and Back Equalizer Design
N 1 A 1E+
S 221
1
N 1 A 1E+
1
N 2
A 22
^
2
2122
2
21
12
2
2
ˆ1 SA
STT
1122
221221
2222
1
1
1 AS
SAAAA
2
1122
2
211
11 AS
ATT G
2
11
2
21 111 SSTG
Multistage Amplifier Design
N k+11 A k-1 A k
S 221^ A 22k
^
N 1
1
E
+
N 1
S 22k^A 22(k-1)
^
2
1122
2
1122
2
21
2
21
1
1
1
ˆ1ˆ1
kkk
kk
SAAS
SATT kk
2
22
/
ˆ1
1
kA
TT kk
Circuit Data Modelling
Data Modeling TasksData Modeling Tasks
Given a numerical data set which measured over a Given a numerical data set which measured over a frequency band as an impedance, admittance or frequency band as an impedance, admittance or reflectance as real-imaginary or magnitude-phasereflectance as real-imaginary or magnitude-phase
Match a network function which satisfies Positive-Realness Match a network function which satisfies Positive-Realness conditionsconditions
Generate network equivalent constructed with passive Generate network equivalent constructed with passive circuit elements.circuit elements.
ApplicationsApplications
Antenna modelingTo analyze their electrical behavior such as the gain bandwidth limitations or power delivering capabilities
Impedance matchingDesign of high speed/high frequency analog/digital mobile communication sub-systems manufactured on VLSI chips
Passive device modelingSuch as components, connectors, power/signal line’s behavior characterization, simulation
Active deviceInput or output port model for impedance matching, noise figure merits
Approaches
Modeling by Immitance functionsusing Non-Linear optimizationusing interpolation techniques
• Polynomial interpolation• Lagrange interpolation
Zin
Rm Xm
Xf
Real Part Data
Imaginary Part Data
ZM : Minimum Reactance Function
ZF : Foster Function
Approaches
Modeling by Scattering parameters using Non-Linear optimization using iterative solution
Sin 1ΩN
Lossless two-ports
)(/)(11
pgphS
)(/)(12
pgpfS
)(/)(21
pgpfS
)(/)(22
pgphS
Belevitch Representation of Scattering Parameters:
An Antenna modeling example
Freq(MHz)
Real part data()
Imaginary part data ()
20 0.6 -6.0
30 0.8 -2.2
40 0.8 0
45 1.0 1.4
50 2.0 2.8
55 3.4 4.6
60 7.0 7.6
65 15.0 8.8
70 22.4 -5.4
75 11.0 -13.0
80 5.0 -10.8
90 1.6 -6.8
100 1.0 -4.4
Given measured impedance data
Program screen
An Antenna modeling example
--- Result of Modelling --- Real Part Modelling Result = Successful Trial number: 60 Error: 3.8979 Function type: Impedance Interp. method: Lagrange Zeros: Chebyshev roots: 3 12 Samples: 2 9 Minimum reactance functions R_w2_nom =0.000000e+000 0.000000e+000 1.000000e+000 R_w2_den =7.812500e+000 -7.544643e+000 1.865737e+000 Z_s_nom =0.000000e+000 4.964006e+000 5.359813e-001 Z_s_den =2.046303e+000 2.209465e-001 1.000000e+000 Synthesis of Minimum reactance functions C1= +4.12228e-001 L2= +4.96401e+000 R3= +5.35981e-001
Foster Modelling Result = Successful Error: 1.3751 Func. type: FF-1, poles at zero, infinity and finite freq. Samples: 1 8 10 13 pole freq. =6.745369e-001 7.745967e-001 Residues =2.534267e-002 3.561921e-002 1.870885e+000 1.489978e+000 Synthesis of Foster functions L1= +5.56982e-002 C2= +3.94591e+001 L3= +5.93654e-002 C4= +2.80747e+001 L5= +1.87088e+000 C6= +6.71151e-001 End of report.
Report of Program
Future WorksFuture Works
A modeling process can be done for •One-port device•Multi-port device
And modeled devices can be•Passive device •Active device
DoneDoneFuture projectFuture project
DoneDonePartially donePartially done
Design of Broadband Phase Shifters
00oo-360-360oo Wide Range Digital Phase Wide Range Digital Phase ShiftersShifters
Current Projects:CAD Tools for Broadband Microwave Circuit Design
RFT Toolboxes:RFT Toolboxes: Modelling ToolboxWMCD WMCD Integrated Toolbox
RFT Matching Network Design RFT Matching Network Design ToolboxesToolboxes
Toolboxes
• Line Segment Technique
• Direct Computational Technique
• Parametric Technique
• Simplifed Real Frequency Technique
• Mixed Lumped-distributed Design
Modelling ToolboxModelling Toolbox
WMCD WMCD Integrated Toolbox
Broadband matching toolbox: Design and optimization of broadband matching networks and amplifiers via real frequency techniquesLumped Element Design
Distributed Element Design
Mixed Lumped-Distributed Design
Multistage Amplifier Design
Options:
• Line Segment Approach
• Direct Computational Technique
• Parametric Approach
• Simplifed Real Frequency Technique
v1.0
WWIDEBANDIDEBAND
MMICROWAVEICROWAVE
CCIRCUITIRCUIT
DDESIGNERESIGNER
Design Example: Double Matching Problem
Bandwidth: 0 w 1 Complexity of equalizer:
n=3 (Low pass)
NE+
1 1H 2H
1F 1
Z(p) LoadGenerator
18520p61860p65030p
22760p44350p68210pZ
23
2
...
...)(
E
+
11H 2H
1F 1C 1
L2
C 3
1:n
0 0.2 0.4 0.6 0.8 1 1.20
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
- New parametric
_._ SRFT
Frequency
Gain(dB)
w
Comparision of RFT Results (Normalized values)
Min.Gain
Ripple
n C1 L2 C3
Scattering approach
0.922 0.0768 1.188 1.322 2.475 1.113
Parametric approach
0.923 0.06391.119
11.3526
2.3902
1.1676
Impedance approach
0.924 0.06291.119
81.351
2.3941
1.166
Transducer Power Gain
Design Example: Single Stage Amplifier
Scattering Data for HFET 2001
Frequency
GHz
S11m p
S21 m p
S12m p
S22m p
68
10121416
0.88 -650.83 -850.79 -1010.76 -1130.73 -1260.71 -141
2.00 1251.81 1091.64 951.48 841.39 731.32 61
0.05 600.06 530.06 510.06 520.06 540.07 55
0.71 -220.68 -300.66 -370.66 -430.64 -480.63 -56
1
C 1
L 2
C 3
1 1:n1
C 7
L 4
C 5
L 6
HFET 2001
E
+
1:n 2
0.4 0.5 0.6 0.7 0.8 0.9 13
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
Frequency
front-end
back-end
w
Gain(dB)
C1 = 0.0260
L2 = 0.7516
C3 = 1.4
n1 = 0..6298
n2 = 1.53
C4 = 0.3874
L5 = 1.4105
C6 = 1.307
L7 = 1.6386
9444.57p0466.52p1340.1p
4939.36p5549.43p4075.38)p(Z
23
2
1
8543.0p9461.0p8390.2p3988.0p
5583.0p6049.2p0295.1p5812.2)p(Z
234
23
2
Front-End
Back- End
Normalized element values
Transducer Power Gain
Design Example:Two Stage Amplifier
4 4.5 5 5.5 6 6.5 7 7.5 84
5
6
7
8
9
10
11
12
13
14
15
Frequency(GHz)
TP
G (
dB
)
2nd stage gain1st stage gain
L1=42.3pH, L2=165pH, C3=182pF, C1=170pF, C2=52.8pF, L3=60.2pH, Z1=54.23Ω, Z3=20Ω, C4=170.8pF, Z2=30Ω, Z4=200Ω, Z5=40Ω,
Z6=16.82Ω τ1= τ2= 0.2, τ3= τ4=0.2, τ5= τ6=0.25
Scattering Data for HP 1 μm FET
004797.0
05887.20215.0
9181.23663.01706.1
9890.05352.10
H
004797.0
05887.26803.0
9181.26279.26526.1
4065.16776.21
G
01384.02299.0
5375.07650.05099.0
6233.04481.00
H
01384.02299.0
5375.05828.18484.0
1783.11348.21
G
01308.12796.0
0368.70495.14506.0
0087.58473.00
H
01308.12796.0
0368.77581.28731.0
1076.55963.31
G
Front-End Interstage Back-End
Coefficients of Mixed Element Equalizer
Transducer Power Gain
Selected PublicationsSelected Publications Yarman B.S., “Broadband Network”, Wiley Encyclopedia of Electrical and
Electronics Engineering John G.Webster, Editor, Vol 2, pp.589-605, 1999, John Wiley&Sons corp.
A. Aksen, H. Pınarbası,B. S. Yarman ”A Parametric Approach to Construct Two-Variable Positive Real Impedance Functions for the Real Frequency Design of Mixed Lumped-Distributed Matching Networks IEEE MTT- 2004, pp. 1851-1854, 6-11 June 2004
A.Aksen, B.S.Yarman, “A Real Frequency Approach to Describe Lossless Two-Ports Formed with Mixed Lumped and Distributed Elements” ” (Dedicated to Professor Alfred Fettweis on the occasion of his 75 th birthday), Int.J.Electron.Commun.(AEÜ) 55 (2001) No.6, pp.389-396
B.S.Yarman, A.Aksen, A.Kılınç, “An Immitance Based Tool for Modelling Passive One-Port Devices by Means of Darlington Equivalents” (Dedicated to Professor Alfred Fettweis on the occasion of his 75 th birthday), Int.J.Electron.Commun.(AEÜ) 55 (2001) No.6, pp.443-451
A.Aksen, B.S.Yarman, “Cascade synthesis of two-wariable lossless two-port networks with lumped elements and transmission lines”, in Multidimensional Signals, Circuits and Systems, Editors: K.Galkowski and J.Wood, Chapter 12, pp.219-232, Taylor and Francis, New York, 2001
B.S.Yarman, E. G. Çimen, A. Aksen, “Description of symmetrical lossless two-ports in two-kinds of elements for the design of microwave communication systems in MMIC realization”, ECCTD2001 (European Conference on Circuit Theory and Design), Espoo, Finland, 28-31 August, 2001