mobility growth drivers 5b - applied materials
TRANSCRIPT
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SILICON SYSTEMS GROUP External Use SILICON SYSTEMS GROUP
Applied Varian VIISta® Trident
High Current System The Most Advanced Ion Implantation Solution
June, 2012
Tom Parrill High Current Marketing Director
Varian Semiconductor Equipment Business Unit
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0
500
1000
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'11 '12E '13F '14F '15F
1,152 SMARTPHONES
5B CUMULATIVE
UNITS
Mobility Growth Drivers
Source: Gartner, Applied Materials, UBM TechInsights, Company Announcements
UN
ITS
(M
ILL
ION
S)
UNPRECEDENTED
UNIT VOLUMES
315 TABLETS
Industry driving high performance and low power chips
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Mobility End Markets Require Lower Power…
3
High-k Metal Gate inflection enables longer battery life
Source: 2012 Anand Lal Shimpi, AnandTech
High-k / Metal Gate
SION/Poly-Si
40% delay
Improvement
~10x Reduction in
Leakage
Delay
Leakag
e
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Desktop
Mobile
Le
ak
ag
e C
urr
en
t (m
A)
4
Source: 2009 IEEE Keynote, J. Chen, NVIDIA
Graphics
chips are
binned for
different end
markets
Chip Speed (MHz)
1000
100 300 330 360 390 420 450 480
High-End
Process variability reduces high-performance chip yield
…and High Performance
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Implants for Higher Performance Lower Power
5
IMPLANT APPLICATION DEVICE IMPACT
Source/Drain Leakage Current
Pre-Silicide Strain Mobility
Contact Contact Resistance
LDD w Co-Implant Leakage Current
Poly Gate Drive Current
Work Function HKMG Drive Current
1
4
3
2
5
6
New implant technology needed for <2xnm devices
5
6 4
1
3
2
Introducing Applied Varian VIISta® Trident
High Current System
Enabling <2xnm transistors
Pure, precise, productive
Builds on industry-standard ribbon beam dual magnet
architecture
Extends Applied’s technology leadership in implant market
6 External Use SILICON SYSTEMS GROUP
Key Features Enable Leading Device Performance Horizontal & vertical angle control enables
precise steering and angle spread
Energy Purity Module eliminates high-
energy outliers
Cryo-implant enhances device performance
through full amorphization
Tightest process variation with low-temperature capability
7
Ion source designed for fast tuning of a wide
variety of species -- both dopant and non-dopant
Beam Height Modulation delivers precise dose
rate control, tailoring doping profile
Uniformity Enhancement Module (UEM) improves
low energy beam profile uniformity
External Use SILICON SYSTEMS GROUP
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Best in Class Energy Purity Control
8
1E+22
1E+21
1E+20
1E+19
1E+18
Concentr
atio
n (
cm
-3)
5 10 15 20 25 30 35 40
Depth (nm)
0
EPM Eliminates Energy Contamination
EPM for Foundries with various product designs
EPM
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Best in Class Energy Purity Control
9
1E+22
1E+21
1E+20
1E+19
1E+18
Concentr
atio
n (
cm
-3)
5 10 15 20 25 30 35 40
Depth (nm)
0
EPM Eliminates Energy Contamination
EPM for Foundries with various product designs
EPM
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SILICON SYSTEMS GROUP SILICON SYSTEMS GROUP External Use 10
Damage Engineering Solution Process Temperature Control II
EOR Loops
SPE Re-Growth
Surface
Da
ma
ge
In
ten
sit
y
a/c Interface
Traditional Implant
a-Si
PTC II for improving device performance & process margin
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SILICON SYSTEMS GROUP SILICON SYSTEMS GROUP External Use 11
Damage Engineering Solution Process Temperature Control II
EOR Loops
SPE Re-Growth
Surface
Da
ma
ge
In
ten
sit
y
a/c Interface
Traditional Implant
a-Si
PTC II for improving device performance & process margin
Surface
Da
ma
ge
In
ten
sit
y
a/c Interface
SPE Re-Growth
With PTC II
Damage Engineering
a-Si
EOR Loops
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Cryo-Implant Enables Full Amorphization
RT -20oC -60oC -100oC
HIGH CRYSTAL
DAMAGE
PARTIAL
AMORPHIZATION
FULL
AMORPHIZATION
Colder is better less defect better leakage reduction
12
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Advanced Transistors Expanding Process Applications
13
Fab Step
Counts
Complexity increasing the served market opportunity
~2x INCREASE Implant
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A Decade of Implant Product Leadership
14
Applied is the industry’s partner-of-choice for Implant
>1000 SYSTEMS
INSTALLED
*Through May 2012
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Applied Varian VIISta® Trident
High Current System
15
Enables <2xnm
transistors
Highest purity with
superb uniformity
enhancing device
performance yield
Unique -100oC
implant enables higher
device performance
Continuing implant leadership for the next decade
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