model relationships cmos process flowclass.ece.iastate.edu/ee330/lectures/ee 330 lect 16 fall...gs...
TRANSCRIPT
![Page 1: Model Relationships CMOS Process Flowclass.ece.iastate.edu/ee330/lectures/EE 330 Lect 16 Fall...GS for an p-channel MOSFET from square-law model In the 0.5u CMOS process if L=1u, W=1u](https://reader031.vdocuments.net/reader031/viewer/2022040415/5f2e83dd388774014f19ab21/html5/thumbnails/1.jpg)
EE 330Lecture 16
Model RelationshipsCMOS Process Flow
![Page 2: Model Relationships CMOS Process Flowclass.ece.iastate.edu/ee330/lectures/EE 330 Lect 16 Fall...GS for an p-channel MOSFET from square-law model In the 0.5u CMOS process if L=1u, W=1u](https://reader031.vdocuments.net/reader031/viewer/2022040415/5f2e83dd388774014f19ab21/html5/thumbnails/2.jpg)
Quiz 13 Determine the current ID for the following circuit. Assume the MOS transistor can be modeled by the basic square-law model with parameters VT=0.8V, µCOX=100µA/V2 and COX=4fF/µ2 and the device has dimensions W=10µ and L=2µ.
Bφ
![Page 3: Model Relationships CMOS Process Flowclass.ece.iastate.edu/ee330/lectures/EE 330 Lect 16 Fall...GS for an p-channel MOSFET from square-law model In the 0.5u CMOS process if L=1u, W=1u](https://reader031.vdocuments.net/reader031/viewer/2022040415/5f2e83dd388774014f19ab21/html5/thumbnails/3.jpg)
And the number is ….
6
31
2
45
7
8
9
![Page 4: Model Relationships CMOS Process Flowclass.ece.iastate.edu/ee330/lectures/EE 330 Lect 16 Fall...GS for an p-channel MOSFET from square-law model In the 0.5u CMOS process if L=1u, W=1u](https://reader031.vdocuments.net/reader031/viewer/2022040415/5f2e83dd388774014f19ab21/html5/thumbnails/4.jpg)
And the number is ….
6
31
2
4
5
7
8
9
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Quiz 13 Determine the current ID for the following circuit. Assume the MOS transistor can be modeled by the basic square-law model with parameters VT=0.8V, µCOX=100µA/V2 and COX=4fF/µ2 and the device has dimensions W=10µ and L=2µ.
Bφ
Solution:
1. Guess the device is operating in the Saturation Region
2. Analyze the circuit with the device in this region3. Verify region of operation
4. Repeat steps 1-3 if guess was not correct
![Page 6: Model Relationships CMOS Process Flowclass.ece.iastate.edu/ee330/lectures/EE 330 Lect 16 Fall...GS for an p-channel MOSFET from square-law model In the 0.5u CMOS process if L=1u, W=1u](https://reader031.vdocuments.net/reader031/viewer/2022040415/5f2e83dd388774014f19ab21/html5/thumbnails/6.jpg)
Quiz 13 Determine the current ID for the following circuit. Assume the MOS transistor can be modeled by the basic square-law model with parameters VT=0.8V, µCOX=100µA/V2 and COX=4fF/µ2 and the device has dimensions W=10µ and L=2µ.
Solution: 2. Analyze the circuit with the device in this region
( )⎪⎪⎪
⎩
⎪⎪⎪
⎨
⎧
−≥≥−
−<≥⎟⎠⎞
⎜⎝⎛ −−
≤
=
TGSDSTGS2
TGSOX
TGSDSGSDSDS
TGSOX
TGS
D
VVVVVVV2LWµC
VVVVVV2
VVVLWµC
VV0
I T
![Page 7: Model Relationships CMOS Process Flowclass.ece.iastate.edu/ee330/lectures/EE 330 Lect 16 Fall...GS for an p-channel MOSFET from square-law model In the 0.5u CMOS process if L=1u, W=1u](https://reader031.vdocuments.net/reader031/viewer/2022040415/5f2e83dd388774014f19ab21/html5/thumbnails/7.jpg)
Quiz 13 Determine the current ID for the following circuit. Assume the MOS transistor can be modeled by the basic square-law model with parameters VT=0.8V, µCOX=100µA/V2 and COX=4fF/µ2 and the device has dimensions W=10µ and L=2µ.
Solution: 2. Analyze the circuit with the device in this region
( )
( )24 1010 1 5 0 82 2
123
2D OX GS T
WI µC V V2L
. .
Aµ
−
= −
= −•
=3. Verify region of operation
GS DS GS T? ?V V V V VT≥ > −
1.5V > 0.8V 3V> 1.5V- 0.8V
ID
Verifies!
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n-Channel MOSFET Operation and Model
VBS
VGS
VDS
Increase VDS even moreID=?IG=0IB=0
Inversion layer disappears near drain
IDIG
IB
(VBS small)
Termed “saturation”region of operationSaturation first occurs when VDS=VGS-VT
Review from Last Time
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Graphical Interpretation of MOS Model
Saturation
Triode
2OXD DS
µC WI = V2L
( )
GS T
DSD OX GS T DS GS DS GS T
2
OX GS T GS T DS GS T
0 V VVWI µC V V V V V V V V
L 2WµC V V V V V V V2L
T
⎧⎪ ≤⎪⎪ ⎛ ⎞= − − ≥ < −⎨ ⎜ ⎟
⎝ ⎠⎪⎪
− ≥ ≥ −⎪⎩
Cutoff
VGS1
VGS3
VGS2
VGS4
Review from Last Time
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Model Status
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Square-Law Model
( )
GS T
DSD OX GS T DS GS DS GS T
2
OX GS T GS T DS GS T
0 V VVWI µC V V V V V V V V
L 2WµC V V V V V V V2L
T
⎧⎪ ≤⎪⎪ ⎛ ⎞= − − ≥ < −⎨ ⎜ ⎟
⎝ ⎠⎪⎪
− ≥ ≥ −⎪⎩
VGS1
VGS3
VGS2
VGS4
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Switch-Level Models
Switch-level model including gate capacitance and drain resistance
Switch closed for VGS=“1”
CGS and RSW dependent upon device sizes and process
For minimum-sized devices in a 0.5u process
1.5fFCGS ≅⎭⎬⎫
−−
≅channelp6KΩchanneln2KΩ
Rsw
Considerable emphasis will be placed upon device sizing to manage CGS and RSW
Drain
Gate
Source
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Extended Square-Law Model
( ) ( )1
GS T
DSD OX GS T DS GS DS GS T
2
OX GS T DS GS T DS GS T
0 V VVWI µC V V V V V V V V
L 2WµC V V V V V V V V2L
T
λ
⎧⎪ ≤⎪⎪ ⎛ ⎞= − − ≥ < −⎨ ⎜ ⎟
⎝ ⎠⎪⎪
− • + ≥ ≥ −⎪⎩
( )φφγ −−+= BST0T VVV
Model Parameters : µ,COX,VT0,φ,γ,λ
Design Parameters : W,L but only one degree of freedom W/L
0I0I
B
G
==
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Short-Channel Model
( ) ( )
( ) ( )
1
1
GS T
2 2 2D OX GS T DS GS DS GS
1
22 OX GS T GS T DS GS
0 V VWI µC V V V V V V VL
WµC V V V V V VL
T T
T
V
V
α α
αα
θ θθ
θ θ
⎧⎪ ≤⎪⎪= − ≥ < −⎨⎪⎪
− ≥ ≥ −⎪⎩
α is the velocity saturation index, 2 ≥ α ≥ 1
Channel length modulation (λ) and bulk effects can be added to the velocitySaturation as well
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BSIM model
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BSIM Binning Model - multiple BSIM models !
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Model RelationshipsDetermine RSW and CGS for an n-channel MOSFET from square-law model In the 0.5u CMOS process if L=1u, W=1u
(Assume µCOX=100µAV-2, COX=2.5fFu-2,VT0=1V, VDD=3.5V, VSS=0)
( )
GS T
DSD OX GS T DS GS DS GS T
2
OX GS T GS T DS GS T
0 V VVWI µC V V V V V V V V
L 2WµC V V V V V V V2L
T
⎧⎪ ≤⎪⎪ ⎛ ⎞= − − ≥ < −⎨ ⎜ ⎟
⎝ ⎠⎪⎪
− ≥ ≥ −⎪⎩
When SW is on, operation is “deep” triode
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Model Relationships
(Assume µCOX=100µAV-2, COX=2.5fFu-2,VT0=1V, VDD=3.5V, VSS=0)
( )DSD OX GS T DS OX GS T DS
VW WI µC V V V µC V V VL 2 L⎛ ⎞= − − ≅ −⎜ ⎟⎝ ⎠
( ) ( )
1 414 3 5 11
KE
= = = Ω⎛ ⎞− − −⎜ ⎟⎝ ⎠
GS DD
GS
DSSQ
D V =VOX GS T
V =3.5V
V 1R = WI µC V V ( ) .L
CGS= COXWL = (2.5fFµ-2)(1µ2) = 2.5fF
Determine RSW and CGS for an n-channel MOSFET from square-law model In the 0.5u CMOS process if L=1u, W=1u
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Model Relationships
( COX=2.5fFu-2,VT0=1V, VDD=3.5V, VSS=0)
( )
GS T
DSD OX GS T DS GS DS GS T
2
OX GS T GS T DS GS T
0 V VVWI µC V V V V V V V V
L 2WµC V V V V V V V2L
T
⎧⎪ ≤⎪⎪ ⎛ ⎞= − − ≥ < −⎨ ⎜ ⎟
⎝ ⎠⎪⎪
− ≥ ≥ −⎪⎩
When SW is on, operation is “deep” triode
Determine RSW and CGS for an p-channel MOSFET from square-law model In the 0.5u CMOS process if L=1u, W=1u
Observe µn\ µp≈3
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Model Relationships
( COX=2.5fFu-2,VT0=1V, VDD=3.5V, VSS=0)
( )
GS T
DSD OX GS T DS GS DS GS T
2
OX GS T GS T DS GS T
0 V VVWI µC V V V V V V V V
L 2WµC V V V V V V V2L
T
⎧⎪ ≤⎪⎪ ⎛ ⎞= − − ≥ < −⎨ ⎜ ⎟
⎝ ⎠⎪⎪
− ≥ ≥ −⎪⎩
When SW is on, operation is “deep” triode
Determine RSW and CGS for an p-channel MOSFET from square-law model In the 0.5u CMOS process if L=1u, W=1u
Observe µn\ µp≈3
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Model Relationships
( )⎛ ⎞= − − ≅ −⎜ ⎟⎝ ⎠
DSD p OX GS T DS p OX GS T DS
VW WI µ C V V V µ C V V VL 2 L
( ) ( )
1 121 14 3 5 13 1
KE
= = = Ω⎛ ⎞ ⎛ ⎞− − −⎜ ⎟ ⎜ ⎟⎝ ⎠ ⎝ ⎠
GS DD
GS
DSSQ
D V =Vp OX GS T
V =3.5V
V 1R = WI µ C V V ( ) .L
CGS= COXWL = (2.5fFµ-2)(1µ2) = 2.5fF
Determine RSW and CGS for an p-channel MOSFET from square-law model In the 0.5u CMOS process if L=1u, W=1u
( COX=2.5fFu-2,VT0=1V, VDD=3.5V, VSS=0)
Observe µn\ µp≈3
Observe the resistance of the p-channel device is approximately 3 times larger than that of the n-channel device for same bias and dimensions !
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Modeling of the MOSFETGoal: Obtain a mathematical relationship between the port variables of a device. ( )
( )( ) ⎪
⎭
⎪⎬
⎫
===
BSDSGS3B
BSDSGS2G
BSDSGS1D
V,,VVfIV,,VVfIV,,VVfI
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Small-Signal Model
Goal with small signal model is to predict performance of circuit or device in the vicinity of an operating point
Operating point is often termed Q-point
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Small-Signal Modely
x
Q-point
XQ
YQ
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Technology Files• Design Rules
• Process Flow (Fabrication Technology) (will discussion next )
• Model Parameters (will discuss in substantially more detail after device operation and more advanced models are introduced)
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This table discusses a p-well process flow, an n-well process flow is actually used in the following set of slides with straightforward modifications of this process flow.
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Bulk CMOS Process Description
• n-well process• Single Metal Only Depicted• Double Poly
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Components Shown
• n-channel MOSFET• p-channel MOSFET• Poly Resistor• Doubly Poly Capacitor
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A A’
B’B
C
C’
D
D’
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Consider Basic Components Only
Well Contacts and Guard Rings Will be Discussed Later
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A A’
B’B
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A A’
B’B
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A A’
B’B
n-channel MOSFET
S
D
G
S
D
BG
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A A’
B’B
S
D
BG
W L
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A A’
B’B
n-channel MOSFET
Capacitor
p-channel MOSFET
Resistor
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A A’
B’B
N-well Mask
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A A’
B’B
N-well Mask
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Detailed Description of First Photolithographic Steps Only
• Top View• Cross-Section View
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~
Blank Wafer
p-doped Substrate
ExposeDevelop
Photoresistn-well MaskImplant
~
A A’
B’B
![Page 42: Model Relationships CMOS Process Flowclass.ece.iastate.edu/ee330/lectures/EE 330 Lect 16 Fall...GS for an p-channel MOSFET from square-law model In the 0.5u CMOS process if L=1u, W=1u](https://reader031.vdocuments.net/reader031/viewer/2022040415/5f2e83dd388774014f19ab21/html5/thumbnails/42.jpg)
A-A’ Section
B-B’ Section
PhotoresistN-well MaskExposureDevelop
![Page 43: Model Relationships CMOS Process Flowclass.ece.iastate.edu/ee330/lectures/EE 330 Lect 16 Fall...GS for an p-channel MOSFET from square-law model In the 0.5u CMOS process if L=1u, W=1u](https://reader031.vdocuments.net/reader031/viewer/2022040415/5f2e83dd388774014f19ab21/html5/thumbnails/43.jpg)
A-A’ Section
B-B’ Section
Implant
![Page 44: Model Relationships CMOS Process Flowclass.ece.iastate.edu/ee330/lectures/EE 330 Lect 16 Fall...GS for an p-channel MOSFET from square-law model In the 0.5u CMOS process if L=1u, W=1u](https://reader031.vdocuments.net/reader031/viewer/2022040415/5f2e83dd388774014f19ab21/html5/thumbnails/44.jpg)
N-well Mask
A-A’ Section
B-B’ Sectionn-well
![Page 45: Model Relationships CMOS Process Flowclass.ece.iastate.edu/ee330/lectures/EE 330 Lect 16 Fall...GS for an p-channel MOSFET from square-law model In the 0.5u CMOS process if L=1u, W=1u](https://reader031.vdocuments.net/reader031/viewer/2022040415/5f2e83dd388774014f19ab21/html5/thumbnails/45.jpg)
A A’
B’B
Active Mask
![Page 46: Model Relationships CMOS Process Flowclass.ece.iastate.edu/ee330/lectures/EE 330 Lect 16 Fall...GS for an p-channel MOSFET from square-law model In the 0.5u CMOS process if L=1u, W=1u](https://reader031.vdocuments.net/reader031/viewer/2022040415/5f2e83dd388774014f19ab21/html5/thumbnails/46.jpg)
A A’
B’B
Active Mask
![Page 47: Model Relationships CMOS Process Flowclass.ece.iastate.edu/ee330/lectures/EE 330 Lect 16 Fall...GS for an p-channel MOSFET from square-law model In the 0.5u CMOS process if L=1u, W=1u](https://reader031.vdocuments.net/reader031/viewer/2022040415/5f2e83dd388774014f19ab21/html5/thumbnails/47.jpg)
Active Mask
A-A’ Section
B-B’ Section
Field Oxide Field Oxide Field Oxide
Field Oxide
![Page 48: Model Relationships CMOS Process Flowclass.ece.iastate.edu/ee330/lectures/EE 330 Lect 16 Fall...GS for an p-channel MOSFET from square-law model In the 0.5u CMOS process if L=1u, W=1u](https://reader031.vdocuments.net/reader031/viewer/2022040415/5f2e83dd388774014f19ab21/html5/thumbnails/48.jpg)
A A’
B’B
Poly1 Mask
![Page 49: Model Relationships CMOS Process Flowclass.ece.iastate.edu/ee330/lectures/EE 330 Lect 16 Fall...GS for an p-channel MOSFET from square-law model In the 0.5u CMOS process if L=1u, W=1u](https://reader031.vdocuments.net/reader031/viewer/2022040415/5f2e83dd388774014f19ab21/html5/thumbnails/49.jpg)
A A’
B’B
Poly1 Mask
![Page 50: Model Relationships CMOS Process Flowclass.ece.iastate.edu/ee330/lectures/EE 330 Lect 16 Fall...GS for an p-channel MOSFET from square-law model In the 0.5u CMOS process if L=1u, W=1u](https://reader031.vdocuments.net/reader031/viewer/2022040415/5f2e83dd388774014f19ab21/html5/thumbnails/50.jpg)
A A’
B’B
n-channel MOSFET
Capacitor
P-channel MOSFET
Resistor
![Page 51: Model Relationships CMOS Process Flowclass.ece.iastate.edu/ee330/lectures/EE 330 Lect 16 Fall...GS for an p-channel MOSFET from square-law model In the 0.5u CMOS process if L=1u, W=1u](https://reader031.vdocuments.net/reader031/viewer/2022040415/5f2e83dd388774014f19ab21/html5/thumbnails/51.jpg)
Poly 1 Mask
A-A’ Section
B-B’ Section
Gate Oxide Gate Oxide
![Page 52: Model Relationships CMOS Process Flowclass.ece.iastate.edu/ee330/lectures/EE 330 Lect 16 Fall...GS for an p-channel MOSFET from square-law model In the 0.5u CMOS process if L=1u, W=1u](https://reader031.vdocuments.net/reader031/viewer/2022040415/5f2e83dd388774014f19ab21/html5/thumbnails/52.jpg)
A A’
B’B
Poly 2 Mask
![Page 53: Model Relationships CMOS Process Flowclass.ece.iastate.edu/ee330/lectures/EE 330 Lect 16 Fall...GS for an p-channel MOSFET from square-law model In the 0.5u CMOS process if L=1u, W=1u](https://reader031.vdocuments.net/reader031/viewer/2022040415/5f2e83dd388774014f19ab21/html5/thumbnails/53.jpg)
A A’
B’B
Poly 2 Mask
![Page 54: Model Relationships CMOS Process Flowclass.ece.iastate.edu/ee330/lectures/EE 330 Lect 16 Fall...GS for an p-channel MOSFET from square-law model In the 0.5u CMOS process if L=1u, W=1u](https://reader031.vdocuments.net/reader031/viewer/2022040415/5f2e83dd388774014f19ab21/html5/thumbnails/54.jpg)
Poly 2 Mask
A-A’ Section
B-B’ Section
![Page 55: Model Relationships CMOS Process Flowclass.ece.iastate.edu/ee330/lectures/EE 330 Lect 16 Fall...GS for an p-channel MOSFET from square-law model In the 0.5u CMOS process if L=1u, W=1u](https://reader031.vdocuments.net/reader031/viewer/2022040415/5f2e83dd388774014f19ab21/html5/thumbnails/55.jpg)
A A’
B’B
P-Select
![Page 56: Model Relationships CMOS Process Flowclass.ece.iastate.edu/ee330/lectures/EE 330 Lect 16 Fall...GS for an p-channel MOSFET from square-law model In the 0.5u CMOS process if L=1u, W=1u](https://reader031.vdocuments.net/reader031/viewer/2022040415/5f2e83dd388774014f19ab21/html5/thumbnails/56.jpg)
A A’
B’B
P-Select
![Page 57: Model Relationships CMOS Process Flowclass.ece.iastate.edu/ee330/lectures/EE 330 Lect 16 Fall...GS for an p-channel MOSFET from square-law model In the 0.5u CMOS process if L=1u, W=1u](https://reader031.vdocuments.net/reader031/viewer/2022040415/5f2e83dd388774014f19ab21/html5/thumbnails/57.jpg)
P-Select Mask – n-diffusion
A-A’ Section
B-B’ Section
n-diffusion
![Page 58: Model Relationships CMOS Process Flowclass.ece.iastate.edu/ee330/lectures/EE 330 Lect 16 Fall...GS for an p-channel MOSFET from square-law model In the 0.5u CMOS process if L=1u, W=1u](https://reader031.vdocuments.net/reader031/viewer/2022040415/5f2e83dd388774014f19ab21/html5/thumbnails/58.jpg)
P-Select Mask – p-diffusion
A-A’ Section
B-B’ Section
p-diffusion
![Page 59: Model Relationships CMOS Process Flowclass.ece.iastate.edu/ee330/lectures/EE 330 Lect 16 Fall...GS for an p-channel MOSFET from square-law model In the 0.5u CMOS process if L=1u, W=1u](https://reader031.vdocuments.net/reader031/viewer/2022040415/5f2e83dd388774014f19ab21/html5/thumbnails/59.jpg)
A A’
B’B
Contact Mask
![Page 60: Model Relationships CMOS Process Flowclass.ece.iastate.edu/ee330/lectures/EE 330 Lect 16 Fall...GS for an p-channel MOSFET from square-law model In the 0.5u CMOS process if L=1u, W=1u](https://reader031.vdocuments.net/reader031/viewer/2022040415/5f2e83dd388774014f19ab21/html5/thumbnails/60.jpg)
A A’
B’B
Contact Mask
![Page 61: Model Relationships CMOS Process Flowclass.ece.iastate.edu/ee330/lectures/EE 330 Lect 16 Fall...GS for an p-channel MOSFET from square-law model In the 0.5u CMOS process if L=1u, W=1u](https://reader031.vdocuments.net/reader031/viewer/2022040415/5f2e83dd388774014f19ab21/html5/thumbnails/61.jpg)
Contact Mask
A-A’ Section
B-B’ Section
![Page 62: Model Relationships CMOS Process Flowclass.ece.iastate.edu/ee330/lectures/EE 330 Lect 16 Fall...GS for an p-channel MOSFET from square-law model In the 0.5u CMOS process if L=1u, W=1u](https://reader031.vdocuments.net/reader031/viewer/2022040415/5f2e83dd388774014f19ab21/html5/thumbnails/62.jpg)
A A’
B’B
Metal 1 Mask
![Page 63: Model Relationships CMOS Process Flowclass.ece.iastate.edu/ee330/lectures/EE 330 Lect 16 Fall...GS for an p-channel MOSFET from square-law model In the 0.5u CMOS process if L=1u, W=1u](https://reader031.vdocuments.net/reader031/viewer/2022040415/5f2e83dd388774014f19ab21/html5/thumbnails/63.jpg)
A A’
B’B
Metal 1 Mask
![Page 64: Model Relationships CMOS Process Flowclass.ece.iastate.edu/ee330/lectures/EE 330 Lect 16 Fall...GS for an p-channel MOSFET from square-law model In the 0.5u CMOS process if L=1u, W=1u](https://reader031.vdocuments.net/reader031/viewer/2022040415/5f2e83dd388774014f19ab21/html5/thumbnails/64.jpg)
Metal Mask
A-A’ Section
B-B’ Section
![Page 65: Model Relationships CMOS Process Flowclass.ece.iastate.edu/ee330/lectures/EE 330 Lect 16 Fall...GS for an p-channel MOSFET from square-law model In the 0.5u CMOS process if L=1u, W=1u](https://reader031.vdocuments.net/reader031/viewer/2022040415/5f2e83dd388774014f19ab21/html5/thumbnails/65.jpg)
A A’
B’B
![Page 66: Model Relationships CMOS Process Flowclass.ece.iastate.edu/ee330/lectures/EE 330 Lect 16 Fall...GS for an p-channel MOSFET from square-law model In the 0.5u CMOS process if L=1u, W=1u](https://reader031.vdocuments.net/reader031/viewer/2022040415/5f2e83dd388774014f19ab21/html5/thumbnails/66.jpg)
A A’
B’B
n-channel MOSFET
Capacitor
P-channel MOSFET
Resistor
![Page 67: Model Relationships CMOS Process Flowclass.ece.iastate.edu/ee330/lectures/EE 330 Lect 16 Fall...GS for an p-channel MOSFET from square-law model In the 0.5u CMOS process if L=1u, W=1u](https://reader031.vdocuments.net/reader031/viewer/2022040415/5f2e83dd388774014f19ab21/html5/thumbnails/67.jpg)
A A’
B’B
C
C’
D
D’
![Page 68: Model Relationships CMOS Process Flowclass.ece.iastate.edu/ee330/lectures/EE 330 Lect 16 Fall...GS for an p-channel MOSFET from square-law model In the 0.5u CMOS process if L=1u, W=1u](https://reader031.vdocuments.net/reader031/viewer/2022040415/5f2e83dd388774014f19ab21/html5/thumbnails/68.jpg)
That’s all folks!