modeling and digital control of dc-dc converters -...
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10/1/2015
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Modeling and Digital Control of DC-DC Converters
Liping Guo,
Department of Engineering Technology Northern Illinois University, DeKalb, IL 60115, USA
Outline • Introduction
• Digital control – buck converter
• Adaptive sliding mode control –boost converter
• Evaluation of Silicon IGBT vs. SiC MOSFET for a buck converter
• Test and comparison
• Summary
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Introduction • DC-DC converters play a critical role in the energy conversion
• Design and component selection • Circuit and controller design
• Component selection
• Selection of switching frequency
• Loss estimation
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DC-DC Converters • EMC analysis
• Analyze electromagnetic interference
• Determination of switching transients
• Optimal circuit layout to minimize parasitics
• Mechanical and thermal design • Thermal management
• Packaging
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Introduction (cont’d) • The Advanced Photon Source (APS) at Argonne National
Laboratory is a premier national research facility
• It provides the brightest x-ray beams in the Western Hemisphere to more than 5,000 scientists from the U.S. and around the world
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DC-DC Converters • In order to develop the photon sources, a beam of high energy
electrons are guided through a storage ring using powerful magnets
• Currently more than 1,300 DC-DC converters are used • 15+ years old
• Analog control
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DC-DC Converters • The APS upgrade for 2020 may increase to nearly 3,000 DC-
DC converters
• These power supplies requires high resolution for output current regulation, and high reliability
• Digital upgrade • Higher reliability
• Less susceptible to aging and environmental variations
• Intelligence • Monitoring
• Self-diagnostics
• Communication to a host computer
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Buck Converter • Long time constant
• Filter not needed
• Small signal analysis performed
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IGBT
CVin
+
-
Rm
Lm
8
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Buck Converter
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Parameter Value Unit
Input voltage Vin 62 V
Maximum output current 250 A
Magnet inductance Lm 28 mH
Magnet series resistance Rm 110 mΩ
Switching frequency 20 kHz
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Small Signal Model
• Current to be controlled
• Current variations due to duty cycle
• Current variations due to source voltage
• Superposition
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monm
fonm
inin
idRRdsL
VRR
dVV
sd
siG
0
0
)(ˆ
)(ˆ
monmiv
RRdsL
d
sv
siG
0
0
)(ˆ
)(ˆ
ˆˆ ˆ( ) ( ) ( )id ivi s G d s G v s
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Design Requirements • Low current variations
• 1 mA out of 250 A
• No overshoot
• Switch between two controls • Control I – Faster response
• Control II – Slower with no overshoot
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PI Controller I
• PI compensator
• System dynamics • Phase margin 90.8
• Bandwidth 15.6 rad/s
• Digital Implementation (ZOH)
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1
006999.0007.0)(1
z
zzGc
1
0.0259( ) 0.007cG s
s
-20
-10
0
10
20
30
Magnitude (
dB
)
100
101
102
-90
-89.5
-89
-88.5
-88
Phase (
deg)
Bode DiagramGm = Inf , Pm = 90.8 deg (at 15.6 rad/sec)
Frequency (rad/sec)
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PI Controller II
• PI compensator
• System dynamics • Phase margin 91.4,
• Bandwidth 7.66 rad/s
• Digital Implementation (ZOH)
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-5
0
5
10
15
20
Ma
gn
itu
de
(d
B)
10
0
10
1
-89.2
-89
-88.8
-88.6
-88.4
-88.2
Ph
as
e (
de
g)
Bode Diagram
Gm = Inf , Pm = 91.4 deg (at 7.66 rad/sec)
Frequency (rad/sec)
1
003499.00035.0)(2
z
zzGc
ssGc
01295.00035.0)(2
Noise in Output Current
• Prototype converter implementation
• Undesirable noise observed
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7.8 7.85 7.9 7.95 9.99
10
10.01
Time (sec)
cu
rren
t(A
)
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FFT Analysis of Noise
• Frequency components • 360 Hz, 720 Hz, 20 kHz
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Analysis of Noises • Coupled through current sensor
• Circuit techniques used
• Grounding
• Shielding
• Filter required
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Filter Design
• Pass band
• 100 Hz
• 0.1db
• Stop band
• 300 Hz
• 65 db
• Filter has little effect on system
• System bandwidth about 2.5 Hz
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0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5-100
-80
-60
-40
-20
0
Frequency (kHz)
Ma
gn
itu
de
(d
B)
Butterworth Magnitude Response (dB)
Astop = 65dB
Apass = 0.1dB
Fstop = 300 Hz
Fpass = 100 Hz
Results of Filtering
• Noise signals considerably reduced
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Comparison of Different Types of Digital Filters Buttorworth Chebyshev
-I
Chebyshev
-II
Elliptic Maximally
Flat
Stop band
attenuation (dB)
69.5
69.5
69.5
78.28
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Filter order
9
6
6
5
5
Multiplication
18
12
12
10
14
Addition
18
12
12
10
10
Delay
9
6
6
5
5
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Step Response of Digital Simulation using Different Filters
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Voltage Feedforward Control
• Input voltage variations create disturbances
• Duty cycle adjusted • Based on variation from nominal voltage
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Vin= nominal voltage
d= nominal duty cycle
Vin’= actual voltage
d’= actual duty cycle
dV
Vd
in
in '
'
System Block Diagram • Simplified diagram
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Controller I
IIR
Filter
Controller II
Feed-
forward
Giv
Gid
Iref
d
d’
Vin
Vin’
Disturb-
ance
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Digital Control System Simulation
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Simulation Results • Fast rise at startup transient
• No overshoot
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Digital Control – Buck Converter • Summary
• A digital control system has been designed and evaluated for buck converters at the Advanced Photon Source at the Argonne National Lab
• PI controllers were designed for the converter using frequency response techniques
• A digital controller can easily switch between two sets of gains based on the output current error • First set of PI controller: fast transient response
• Second set of PI controller: better steady state response
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Adaptive Sliding Mode Control – Boost Converter
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Boost converter
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Averaged Model of Boost Converter
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21
2
21
)1(
)1(
xCC
xux
L
V
L
xux in
x1 – Average inductor current iL
X2 – Average capacitor voltage vo
L – Inductor
C – Capacitor
RO – Load resistor
θ – 1/RO
Vin – Input voltage
Control for Boost Converter • Boost converter’s model is nonlinear
• Inherently variable structured because of the switching action
• Sliding mode control • A systematic design method
• Can yield a closed loop system that is very robust against plant uncertainties and external disturbances
• PWM-based adaptive sliding mode control
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Sliding Mode Control
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Estimator-Based Adaptation Laws Design
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ininin
inin
in
VVVxxxxxx
KK
xxxx
VV
Where
xKxCC
xux
xKL
V
L
xux
ˆ~ ,ˆ
~ ,ˆ~ ,ˆ~
gainsobserver theare 0 and 0
lyrespective and of estimates theare ˆ and ˆ
lyrespective and of estimates theare ˆ and ˆ
~~~
)1(~
~~~
)1(~
222111
21
2121
2221
2
112
1
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Adaptation Law • To generate the adaptation laws, we consider the following
Lyapunov function
• Time derivative along the Lyapunov function
• Adaptation law
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2
2
2
1
2
2
2
1
~
2
1~
2
1~
2
1~
2
1inVxCxLV
]ˆ1~[~
]ˆ1~[
~~~
2
1
1
22
2
22
2
11 inin VxVxxxCKxLKV
12
221
~ˆ
~ˆ
xV
xx
in
Sliding Mode Controller Design • Switching surface
• Control is derived by differentiating σ with time
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ˆˆ
ˆ
2
1
in
ref
V
Vx
2
12
2
2
22
2
1
11
ˆ
)~ˆ
ˆˆ
~ˆ(
1x
xV
LVxx
V
LVxLKV
u in
ref
in
ref
in
eq
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Adaptive Sliding Mode Control System
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Boost Converter
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Parameter Value Unit
Input voltage Vin 6 V
Inductance L 180 μH
Capacitance C 150 μF
Output resistance 40 Ω
Switching frequency 200 kHz
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Transient Response with Step Reference Voltage Change – Vref from 7 V to 12 V
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Output voltage
Sliding surface
Inductor current
Transient Response with the Load Resistor Ro Varying Between 40 Ω and 160 Ω
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Output voltage
Sliding surface
Inductor current
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Transient Response with the Input Voltage Vin Varying From Nominal Value of 6 V to 10 V
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Output voltage
Sliding surface
Inductor current
Adaptive Sliding Mode Control – Boost Converter
• Summary • Controller were designed to deal with unknown load resistance and
input voltage
• Closed-loop system is asymptotically stable
• Experimental results show excellent recovery to input voltage variations and unmodelled load variations
• The controller design can be easily extended to other DC-DC converters
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Wide Band Gap (WBG) Devices • Main advantages of WBG devices
• Much smaller switching losses
• Able to operate at higher temperature without much change in electrical properties, leading to better reliability
• High frequency of operation, leading to smaller passive components
• Allow power electronics components to be smaller, faster, more reliable and efficient
Sept 24, 2015 IEEE Rock River Valley Section Meeting 39
Modeling of SiC MOSFET • A level-1 SPICE model for the 1,200 V / 100 A half-bridge SiC
power MOSFET module was developed
• Circuit model parameters for the SiC MOSFET were extracted from the measured static I-V and C-V data.
• A double pulse gate switching circuit was used to validate the model
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Key Device Parameters
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Parameter Silicon IGBT SiC MOSFET
Voltage Rating (V) 600 1,200
Current Rating (A) @ Tj = 25°C 400 168
Forward voltage drop (V) 2.1 @ Tj = 25°C and VGE = 15V
-
On resistance (mΩ) 16 @ Tj = 25°C and VGS= 20V
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Tests #1 – Conduction Losses • Computation of the conduction and switching losses at 20 kHz
when the load current varies from 50 A to 400 A.
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Test #1 – Switching Losses
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Test #2 • Computation of the conduction and switching losses for 4
different loads as the switching frequency is varied from 5 kHz to 25 kHz • 100 A, 200 A, 300 A, 400 A
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0
50
100
150
200
250
300
350
0 5 10 15 20 25 30
Co
nd
uc
tio
n L
oss
es
(W)
Switching Frequency (kHz)
Conduction Losses IGBT 100A Conduction Losses IGBT 200A
Conduction Losses IGBT 300A Conduction Losses IGBT 400A
Conduction Losses MOSFET 100A Conduction Losses MOSFET 200A
Conduction Losses MOSFET 300A Conduction Losses MOSFET 400A
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0
20
40
60
80
100
120
0 5 10 15 20 25 30
Turn
-ON
Lo
sse
s (W
)
Switching Frequency (kHz)
Turn-ON Losses IGBT 100A Turn-ON Losses IGBT 200A Turn-ON Losses IGBT 300A Turn-ON Losses IGBT 400A Turn-ON Losses MOSFET 100A Turn-ON Losses MOSFET 200A Turn-ON Losses MOSFET 300A Turn-ON Losses MOSFET 400A Turn-ON Losses IGBT 100A Turn-ON Losses IGBT 200A Turn-ON Losses IGBT 300A Turn-ON Losses IGBT 400A Turn-ON Losses MOSFET 100A Turn-ON Losses MOSFET 200A
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0
10
20
30
40
50
60
70
0 5 10 15 20 25 30
Turn
-OFF
Lo
sse
s (W
)
Switching Frequency (kHz)
Turn-OFF Losses IGBT 100A Turn-OFF Losses IGBT 200A
Turn-OFF Losses IGBT 300A Turn-OFF Losses IGBT 400A
Turn-OFF Losses MOSFET 100A Turn-OFF Losses MOSFET 200A
Turn-OFF Losses MOSFET 300A Turn-OFF Losses MOSFET 400A
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Test #3 • Varying the switching frequency of the SiC MOSFET to a
wider range from 30 kHz to 150 kHz
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0
50
100
150
200
250
300
0 20 40 60 80 100 120 140 160
Co
nd
uc
tio
n L
oss
es
(W)
Switching Frequency (kHz)
Conduction Losses 100A (W) Conduction Losses 200A (W) Conduction Losses 300A (W) Conduction Losses 400A (W)
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50
0
10
20
30
40
50
60
0 20 40 60 80 100 120 140 160
Turn
-ON
Lo
sse
s (W
)
Switching Frequency (kHz)
Turn-ON Losses 100A (W) Turn-ON Losses 200A (W) Turn-ON Losses 300A(W) Turn-ON Losses 400A (W)
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51
0
2
4
6
8
10
12
14
16
18
0 20 40 60 80 100 120 140 160
Turn
-OFF
Lo
sse
s (W
)
Switching Frequency (kHz)
Turn-OFF Losses 100A (W) Turn-OFF Losses 200A (W) Turn-OFF Losses (W) Turn-OFF Losses 400A (W)
Sept 24, 2015 IEEE Rock River Valley Section Meeting
Conclusion • Buck converter
• PI controller with two sets of gains
• Digital filter
• Boost coverter • Adaptive sliding mode control
• SiC power MOSFET based dc-dc converters have the potential for significant improvement in the energy efficiency compared to silicon IGBT converters currently employed
Sept 24, 2015 IEEE Rock River Valley Section Meeting [email protected] 52