nanostructured solar cells

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     Nanostructured Dielectric Layer – A New Approach to Design

     Nanostructured Solar Cells

    Yusi Chen1*

    , Yangsen Kang1*

    , Yijie Huo1, Dong Liang

    2, Jieyang Jia

    1, Li Zhao

    3,

    Jeremy Kim1, Leon Yao

    1, Jeremy Bregman

    1 and James Harris

    1,3,4 

    1Department of Electrical Engineering, Stanford University, Stanford, CA, 94305, US2Department of Physics, Stanford University, Stanford, CA, 94305, US

    3Department of Material Science and Engineering, Stanford University, Stanford, CA, 94305, US

    4Department of Applied Physics, Stanford University, Stanford, CA, 94305, US

    *These authors contributed equally to this work

     Abstract — Nanostructures have been widely used in solar cellsdue to their extraordinary optical management properties.However, due to the poor junction quality and large surfacerecombination velocity, typical nanostructured solar cells are notefficient. Here we demonstrate a new approach to design and

    fabricate whole-wafer nanostructures on dielectric layer for solarcell application. The design, simulation, fabrication andcharacterization of nanostructured dielectric layer silicon solarcells are presented. The optical simulation results illustrate thatthe periodic nanostructure array on dielectric materialssuppresses the reflection and enhances the absorption over a widespectral range. Reflection measurements show that reflection canbe suppressed below 10% for a wide range of solar spectrum andincident angle. The current density-voltage (J-V) characterizationshows that the short circuit current is improved by 44%. Ourresults suggest this nanostructured dielectric layer has thepotential to significantly improve solar cell performance andavoid typical problems of defects and surface recombination fornanostructured solar cells, thus providing a new pathwaytowards realizing high-efficiency and low-cost solar cells.

     Index Terms — photovoltaics, nanostructures, light trapping 

    I. I NTRODUCTION 

     Nanostructures, including nanowires [1-3], nanopyramids

    [4-6], nanodomes [7] and nanocones [8-10], have been widely

    investigated in solar cells. Such structures have shown very

     promising features for effective anti-reflection and light

    trapping, which may lead to low cost, high efficiency solar

    cells [1-12]. However, despite much effort put into these

    structures, how to effectively utilize nanostructures for high

    efficiency is still an open question. Compared with traditional

     bulk material solar cells [13], nanostructured solar cells [1-12]

    show much lower efficiency. In particular, nanostructured Sisolar cells have 3eV bandgap to avoid

    absorption in it. On the other hand, low cost dielectric

    materials with bandgap >3eV, including silicon nitride (SiNx),

    titanium dioxide (TiO2) and aluminum oxide (Al2O3) [15],

    have been widely used in solar cell industry for high quality

    surface passivation. In this work, we demonstrate the design,

    simulation, fabrication and characterization of a

    nanostructured dielectric layer using SiNx  on a high quality

     planar PN junction Si solar cell, which may overcome thechallenges of low PN junction quality and large surface

    recombination velocity. We also present the complete process

    to form a nanostructured dielectric layer.

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    matched layers were used in the z-direction to minimize

    unwanted reflections, while boundary conditions in the x- and

    y-directions were periodic.

    From the simulation result in figure 1, nanostructured SiNx 

    layer array reduces the reflection from >35% to

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    was measured based on the un-metalized area and was verified

     by integration of the EQE spectrum. The results are shown in

    figure 3(c) for J-V and figure 3(d) for EQE. EQE has been

    improved to >80% over a large range of the solar spectrum

    from

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    [18] B. O. Dabbousi, et al, "Langmuir-Blodgett Manipulation ofSize-Selected Cdse Nanocrystallites," Chemistry of Materials,

    vol. 6, pp. 216-219, 1994.

    978-1-4799-4398-2/14/$31.00 ©2014 IEEE 2205