nbsingh csir-ceeri-semiconductor-activities

107
Work done in Semiconductor Chip Design Area at CSIR-CEERI Under Leadership of Narendra Bahadur Singh Chief Scientist MEMS, Memory and Linear ICs Design Laboratory CSIR-CEERI Pilani, Rajasthan-333031,India. 31 M Tech Dissertations were supervised.

Upload: narendra-bahadur-singh

Post on 12-Apr-2017

157 views

Category:

Devices & Hardware


1 download

TRANSCRIPT

Page 1: Nbsingh csir-ceeri-semiconductor-activities

Work done in

Semiconductor Chip Design Area at CSIR-CEERI

Under Leadership of

Narendra Bahadur SinghChief Scientist

MEMS, Memory and Linear ICs Design Laboratory CSIR-CEERI Pilani,

Rajasthan-333031,India.

31 M Tech Dissertationswere supervised.

.

Page 2: Nbsingh csir-ceeri-semiconductor-activities

We are working on, • Sensors Design• Data Converters Design• Signal Conditioning ICs Design• PLL Design • 32bit Processor Design• Cryptographic System Design • Memory Design• RF CMOS ICs (QPSK/ASK TRX)• 14 Analogue ICs were fabricated• PC based Test setup development

N B SINGH CSIR-CEERI

Page 3: Nbsingh csir-ceeri-semiconductor-activities

Pressure Sensor Process Steps

N B SINGH CSIR-CEERI

Page 4: Nbsingh csir-ceeri-semiconductor-activities

Simulation Result@ Pressure 5MPa

N B SINGH CSIR-CEERI

Page 5: Nbsingh csir-ceeri-semiconductor-activities

Ultrasonic Sensor (mem:2mmx1.5mmx15um @8.57MPa)

N B SINGH CSIR-CEERI

Page 6: Nbsingh csir-ceeri-semiconductor-activities

Thin Film Micro Heater (Poly)

N B SINGH CSIR-CEERI

Page 7: Nbsingh csir-ceeri-semiconductor-activities

Thick Film Micro Heater

N B SINGH CSIR-CEERI

Page 8: Nbsingh csir-ceeri-semiconductor-activities

Designed 14 Analogue CMOS ICs

First time Fully indigenous Full Custom Designs were fabricated and some of them were tested in Year 2006.

SCL India Fabrication ICP Process # 1. Five ICs Designs were submitted from CEERI

• 12-bits Digital-to-Analog Converter• 16-bits Digital-to-Analog Converter• Unbalanced Wheatstone Bridge based Sensor’s Signal Conditioning IC• Voltage Controlled Oscillator(VCO) for Voltage to frequency conversion• Instrumentation Amplifier for Micro Sensor’s Signal Conditioner

SCL India Fabrication ICP Process # 2. Nine ICs Designs were submitted from CEERI

• 16-bits High Performance Analog-to-Digital Converter• 12-bits High Performance Analog-to-Digital Converter• High Frequency Phase-Locked-Loop, 14 - 40MHz• Medium Frequency Phase-Locked-Loop, 2.5 - 20MHz• Low Frequency Phase-Locked-Loop, 666KHz - 2MHz• Single Bridge -Sensor’s Signal Conditioner with Temp. Comp. using PGA• Dual Bridge -Sensor’s Signal Conditioner with Temp. Comp. using PGA• Eight-Analog Input Channels Data Acquisition Micro-System (DAMS)• Position/Motion Sensing Capacitive Network Signal Processing Circuit

N B SINGH CSIR-CEERI

Page 9: Nbsingh csir-ceeri-semiconductor-activities

Photographs of the Mixed Signal ICs Fabricated from SCL

N B SINGH CSIR-CEERI

Page 10: Nbsingh csir-ceeri-semiconductor-activities

12/16 bits Data converter ICs

N B SINGH CSIR-CEERI

Page 11: Nbsingh csir-ceeri-semiconductor-activities

PC Based IC Test Set up

N B SINGH CSIR-CEERI

Page 12: Nbsingh csir-ceeri-semiconductor-activities

N B SINGH CSIR-CEERI

Page 13: Nbsingh csir-ceeri-semiconductor-activities

4-bit SA ADC Decision Tree

N B SINGH CSIR-CEERI

Page 14: Nbsingh csir-ceeri-semiconductor-activities

12bit SA ADC Schematic

N B SINGH CSIR-CEERI

Page 15: Nbsingh csir-ceeri-semiconductor-activities

* Total Nodes: 691* Total Elements: 2172

N B SINGH CSIR-CEERI

Page 16: Nbsingh csir-ceeri-semiconductor-activities

180nm Tech, Rail-to-Rail Op Amp Design using Constant Current Source and Voltage(BGR)

N B Singh CSIR-CEERI

Page 17: Nbsingh csir-ceeri-semiconductor-activities

Sigma Delta ADC Specification• First order Sigma-Delta modulator

• Positive and Negative rails of 2.5V and -2.5V

• 10-bits of digital resolution

• Input frequency of 1 KHz

• Clock frequency of 5 MHz

• Sampling frequency of 77 KHz (i.e. Nyquist rate of 38.5 KHz)

N B SINGH CSIR-CEERI

Page 18: Nbsingh csir-ceeri-semiconductor-activities

Integrator • Closed loop gain should be small enough so that the output does not rail Defined by the values of R and C• Optimum values of R and C to be chosen C should be small to minimize layout area

Op-Amp • Should have high gain to integrate smoothly• Large bandwidth to pass through all the harmonics of input wave The unity gain BW should be greater than that of the clock frequency to effectively pass the signal• High phase margin for stability

Op-Amp Specifications• Gain = 118 dB • Unity Gain BW = 57 MHz• Phase Margin = 73°• CMRR = 1002:1

N B SINGH CSIR-CEERI

Page 19: Nbsingh csir-ceeri-semiconductor-activities

First Order SD Modulator Op Amp Specs

Parameter Value

Open-Loop Gain 68.75 db

Phase Margin 76.8 degrees

Gain Bandwidth 9.5 MHz

Offset 151.6µV

Overshoot/Undershoot 272.7/3.9 mV

Slew Rate +180/-150 V/µsec

Delay +721/-904 nsec

Rise/Fall Time 751/1.4 nsec

Settle Time 15.4 µsec

N B SINGH CSIR-CEERI

Page 20: Nbsingh csir-ceeri-semiconductor-activities

Parameter Value

Rise Time 1.4 nsec

Fall Time 3.2 nsec

Slew Rate +1/-2.3 V/nsec

Delay +3.7/-6.8 nsec

Offset 502 µV

Overshoot 28.7 mV

Undershoot 7.8 mV

Settle Time 0.31 µsec

Comparator Specs Full Custom Layout SD Modulator in 180nm TSMC MM Technology

N B SINGH CSIR-CEERI

Page 21: Nbsingh csir-ceeri-semiconductor-activities

Result for First Order Sigma-Delta Result of Parasitic Net list Modulator for ±500mV,50KHz with Lumped & DistributedInput and 6MHz Clock. RCC extracted from Modulator Core Layout. 

N B SINGH CSIR-CEERI

Page 22: Nbsingh csir-ceeri-semiconductor-activities

Another Architecture of a Sigma-Delta ADC Modulator Sinusoidal input, peak amplitude = ±500mVSignal Frequency = 50KHzClock Frequency = 6MHz

N B SINGH CSIR-CEERI

Page 23: Nbsingh csir-ceeri-semiconductor-activities

Decimator Circuit for the SD ADC Verification Circuit for SD ADC 8bit ADC Modulator+Decimator

N B SINGH CSIR-CEERI

Page 24: Nbsingh csir-ceeri-semiconductor-activities

SD Modulator

N B Singh CSIR-CEERI

Page 25: Nbsingh csir-ceeri-semiconductor-activities

Two Stage Modulator

N B SINGH CSIR-CEERI

Page 26: Nbsingh csir-ceeri-semiconductor-activities

Sigma-Delta Modulator Result

N B SINGH CSIR-CEERI

Page 27: Nbsingh csir-ceeri-semiconductor-activities

Simulation Result for Modulator of SD ADC

N B Singh CSIR-CEERI

Page 28: Nbsingh csir-ceeri-semiconductor-activities

N B SINGH CSIR-CEERI

Page 29: Nbsingh csir-ceeri-semiconductor-activities

N B SINGH CSIR-CEERI

Page 30: Nbsingh csir-ceeri-semiconductor-activities

N B SINGH CSIR-CEERI

Page 31: Nbsingh csir-ceeri-semiconductor-activities

N B SINGH CSIR-CEERI

Page 32: Nbsingh csir-ceeri-semiconductor-activities

N B SINGH CSIR-CEERI

Page 33: Nbsingh csir-ceeri-semiconductor-activities

N B SINGH CSIR-CEERI

Page 34: Nbsingh csir-ceeri-semiconductor-activities

N B SINGH CSIR-CEERI

Page 35: Nbsingh csir-ceeri-semiconductor-activities
Page 36: Nbsingh csir-ceeri-semiconductor-activities
Page 37: Nbsingh csir-ceeri-semiconductor-activities

Signal Conditioning Circuit

N B SINGH CSIR-CEERI

Page 38: Nbsingh csir-ceeri-semiconductor-activities

N B SINGH CSIR-CEERI

Page 39: Nbsingh csir-ceeri-semiconductor-activities

N B SINGH CSIR-CEERI

Page 40: Nbsingh csir-ceeri-semiconductor-activities

N B SINGH CSIR-CEERI

Page 41: Nbsingh csir-ceeri-semiconductor-activities

PLL Schematic

N B SINGH CSIR-CEERI

Page 42: Nbsingh csir-ceeri-semiconductor-activities

N B SINGH CSIR-CEERI

Page 43: Nbsingh csir-ceeri-semiconductor-activities

VCO Measurement Result

N B SINGH CSIR-CEERI

Page 44: Nbsingh csir-ceeri-semiconductor-activities

N B SINGH CSIR-CEERI

Page 45: Nbsingh csir-ceeri-semiconductor-activities

PLL Simulation Result

N B SINGH CSIR-CEERI

Page 46: Nbsingh csir-ceeri-semiconductor-activities

IEEE-754 Processor Implementation

N B SINGH CSIR-CEERI

Page 47: Nbsingh csir-ceeri-semiconductor-activities

Processor RTL Description Page # 1

N B SINGH CSIR-CEERI

Page 48: Nbsingh csir-ceeri-semiconductor-activities

Processor RTL Description Page # 2

N B SINGH CSIR-CEERI

Page 49: Nbsingh csir-ceeri-semiconductor-activities

Processor RTL Description Page # 2

N B SINGH CSIR-CEERI

Page 50: Nbsingh csir-ceeri-semiconductor-activities

32-Bit Microprocessor Layout

N B SINGH CSIR-CEERI

Page 51: Nbsingh csir-ceeri-semiconductor-activities

32-Bit Microprocessor Schematic Top

N B SINGH CSIR-CEERI

Page 52: Nbsingh csir-ceeri-semiconductor-activities

32-Bit Microprocessor Schematic Sheet# 1

N B SINGH CSIR-CEERI

Page 53: Nbsingh csir-ceeri-semiconductor-activities

32-Bit Microprocessor Schematic Sheet# 2

N B SINGH CSIR-CEERI

Page 54: Nbsingh csir-ceeri-semiconductor-activities

32-Bit Microprocessor Schematic Sheet# 3

N B SINGH CSIR-CEERI

Page 55: Nbsingh csir-ceeri-semiconductor-activities

32-Bit Microprocessor Schematic Sheet# 4

N B SINGH CSIR-CEERI

Page 56: Nbsingh csir-ceeri-semiconductor-activities

32-Bit Microprocessor Schematic Sheet# 5

N B SINGH CSIR-CEERI

Page 57: Nbsingh csir-ceeri-semiconductor-activities

32-Bit Microprocessor Schematic Sheet# 6

N B SINGH CSIR-CEERI

Page 58: Nbsingh csir-ceeri-semiconductor-activities

Result after exec. of Program to copy 32 memory address

N B SINGH CSIR-CEERI

Page 59: Nbsingh csir-ceeri-semiconductor-activities

N B SINGH CSIR-CEERI

Page 60: Nbsingh csir-ceeri-semiconductor-activities

DCT Implementation

N B SINGH CSIR-CEERI

Page 61: Nbsingh csir-ceeri-semiconductor-activities

DCT Results

N B SINGH CSIR-CEERI

Page 62: Nbsingh csir-ceeri-semiconductor-activities

DCT Computed Result Stored in the RAM

N B SINGH CSIR-CEERI

Page 63: Nbsingh csir-ceeri-semiconductor-activities

Efficient Logic Efficient Logic Generation MethodsGeneration Methods

• Methods to estimate gate driving strength and delaysMethods to estimate gate driving strength and delays• Logical effort Logical effort • Computation of logical effortComputation of logical effort• Multistage networks Multistage networks • Condition for minimum delayCondition for minimum delay• Logical effort for skewed gates Logical effort for skewed gates

N B SINGH CSIR-CEERI

Page 64: Nbsingh csir-ceeri-semiconductor-activities

For static cmos logic style For static cmos logic style 20-bit decoder20-bit decoder

Frequency (MHz) of operation

Delays (ns) Functionality Highest/lowest voltage

Number of transistors

20-bit decoder with sizing

111 MHz 4.3 ns Correct 5v / 0v 17048

20-bit decoder with sizing

5 MHz 2.6 ns Correct 5v / 0v 17048

20-bit decoder without sizing

6 MHz 24.4 ns Spikes at the output

5v / 0v 17048

20-bit decoder without sizing

5 MHz 24.48 ns Spikes at the output

5v / 0v 17048

Table : showing the performance of static cmos 20-bit decoderTable : showing the performance of static cmos 20-bit decoder

AAnalysisnalysis & D& Diiscussionscussion of of RReesultssults

N B SINGH CSIR-CEERI

Page 65: Nbsingh csir-ceeri-semiconductor-activities

Complete BIST scheme

Fault-free converter

Faulty converter

out4

N B SINGH CSIR-CEERI

Page 66: Nbsingh csir-ceeri-semiconductor-activities

Memory Floor Planning

N B SINGH CSIR-CEERI

Page 67: Nbsingh csir-ceeri-semiconductor-activities

SPR Generated Lay out of 1K VSDRAM without pad

N B SINGH CSIR-CEERI

Page 68: Nbsingh csir-ceeri-semiconductor-activities

Lay out of 1K VSDRAM with pad

N B SINGH CSIR-CEERI

Page 69: Nbsingh csir-ceeri-semiconductor-activities

24/05/2010

SIGNAL

0

0

I--PATH

Q--PATH

DELAY

Fig. Proposed QPSK Transceiver Architecture 69

N B SINGH CSIR-CEERI

Page 70: Nbsingh csir-ceeri-semiconductor-activities

System Level Model Of QPSK:24/05/2010

70

N B SINGH CSIR-CEERI

Page 71: Nbsingh csir-ceeri-semiconductor-activities

COMPARISON OF SIMULATION RESULT

Mathematical Modelling

System Level Modelling

SPICE Simulation

24/05/2010

71

N B SINGH CSIR-CEERI

Page 72: Nbsingh csir-ceeri-semiconductor-activities

ADDER OUTPUT

Mathematical Modelling

System Level Modelling

SPICE Simulation

24/05/2010

72

N B SINGH CSIR-CEERI

Page 73: Nbsingh csir-ceeri-semiconductor-activities

CMOS Squarer

Vcc=5V iin=±50µA73

N B SINGH CSIR-CEERI

Page 74: Nbsingh csir-ceeri-semiconductor-activities

CMOS Rectifier

Vd=5V iin=±50µA Iref=1mA74

N B SINGH CSIR-CEERI

Page 75: Nbsingh csir-ceeri-semiconductor-activities

Proposed architecture of ASK Transceiver at block level

75

N B SINGH CSIR-CEERI

Page 76: Nbsingh csir-ceeri-semiconductor-activities

ASK Response of TRx

76 Vc=2V Vs=5V fc=20MHz fs=20KHz

N B SINGH CSIR-CEERI

Page 77: Nbsingh csir-ceeri-semiconductor-activities

Simulated waveform with 20KHz signal and 20MHz carrier

R=10K C=470pF77

N B SINGH CSIR-CEERI

Page 78: Nbsingh csir-ceeri-semiconductor-activities

Organization of Memory With RS Code

Auto recovery

Memory ArrayRow Dec.

Con. Logic

Sense Amp./ Buffer

RS Encoder RS Decoder

Input / Output Buffer

Control Unit

N B SINGH CSIR-CEERI

Page 79: Nbsingh csir-ceeri-semiconductor-activities

Read Solomon Decoder

N B SINGH CSIR-CEERI

Page 80: Nbsingh csir-ceeri-semiconductor-activities

RS(24) Encoder Architecture

N B SINGH CSIR-CEERI

Page 81: Nbsingh csir-ceeri-semiconductor-activities

Specifications

Target FPGA Device Vertex II Pro

Word Size (n) 60bit

Data word size (k) 36bit

Parity Size (p) 24bit

Data Encode Cycles 9clocks

Data Decode Cycles 42clock

Block size 4bit

Hardware description language HDL Verilog

Tool Modelsim and Xilinx

N B SINGH CSIR-CEERI

Page 82: Nbsingh csir-ceeri-semiconductor-activities

RS(24bit) Synthesis Results

Parameter RS Encoder RS Decoder Total

Cell Used 187 766 953

Input arrival time(Min)

before clock

3.440ns 4.871ns

Output required time (Max) after clock

4.097ns 3.702ns

Power ---------------- ---------------- 423mW

Data Path delay

Ambient temp -------------- ---------------- 25ºC

Maximum Frequency

349.284MHz 163.052MHz ----

N B SINGH CSIR-CEERI

Page 83: Nbsingh csir-ceeri-semiconductor-activities

White Board System Integration on FPGAVGA Camera+Controller+µC+ Light Pen

N B SINGH CSIR-CEERI

Page 84: Nbsingh csir-ceeri-semiconductor-activities

NAND Flash Securityinvented by Dr. Fujjo Masuoka and Mr Shoji Ariijumi from Toshiba,1980NAND Flash Securities are,• Unique ID 64-bit Serial Number guarantee 264, or 1.8 x 1019 S. Numbers.• One Time Programmable (OTP) uses fixed number of pages• Component authentication used for serial number verification in ICs to check critical system components swapping.• Code authentication to protect system code• Digest number to verify at boot time whether to start or not. • NAND Flash devices can accommodate multiple digest numbers Hacker could mot successfully breach code authentication• Hash Algorithm - To create a code authentication or digest number, apply a hash algorithm to the original version of code, then program this multi byte number into the OTP area. including the unique ID as part of the hash input string, the code authentication number cannot be duplicated, although the code may be duplicated. • CRC-16,CRC-32,MDA-4,MDA-5, SHA-1 and SHA-256 are hash algorithm• SHA-256 is most secure and CRC-16 is the least secure hash algorithm SHA-256 has 32 bits word, 512 bit Block size, less than 264 bits message size, 256 bits message digest and 128 bits security. • AES SHA-256 and RSA-1024 are used as an encryption in SLC and MLC NAND Flash• Unique ID and OTP capabilities offer some of the most secure NAND Flash solutions available.

N B SINGH CSIR-CEERI

Page 85: Nbsingh csir-ceeri-semiconductor-activities

Reliability Issues in NAND Flash Memory

Data errors corrected by error correction codes except Burst dataEndurance and high temperature data retention are the most important reliability issues of Flash memory.No Reliability Issues with 20nm high-K MG NAND Flash Memory. h-k Materials: HfO2,Al2O3,ZrO2,HfO2/Al2O3,Silicates,AlNy(Ox)Serious limitations as it’s shrunk below 11nm or so. Write endurance plummets, memory retention times are reduced and cell-to-cell interactions increase significantly.Typical sub-90nm NAND Flash cells reliability issues :100k cycle’s(SLC), 5-10k cycles(MLC) NAND endurance and 2 hours High Temperature Storage (HTS: 150ºC, 200ºC & 250ºC).Nit: Interface trap generation & bulk trap generation show the power dependence on program/erase cycle count. Nit Recovery model:dNit/Nit = -k.dt = -k0 exp(-Ea/KbT).dtNit(t) = Nit(0) e-kt , where t is the baking time and Nit(0) is interface charge density at t=0.Based on the Arrhenius approximation, k takes the form:k = k0 exp(-Ea/kbT)

N B SINGH CSIR-CEERI

Page 86: Nbsingh csir-ceeri-semiconductor-activities

Reliability issues of NAND Flash memory

Endurance and High Temperature Data Retention:In endurance process, the program/erase cycling causes,to raise interface trap(Nit) and oxide trap(Not) generation in tunneling oxide.Trap generation models under constant stress arethermo-chemical (E) model , Scattering-Induced Diffusion (SID) model and reaction-diffusion (R-D) model , can not be directly applied on Flash memory cells, due to its bipolar stress and dynamic electric filed. Widely accepted that the interface trap recovery , IEEE2009 electron-detrapping and Stress Induced Leakage Current (SILC) are regarded, as the important physics mechanisms in the high temperature retention.However, Study is incomplete for HTS NAND Flash.MSP (Memory Signal Processing) technology isa combination of error correction and memory management schemes. MSP2020 supports ONFI com-pliant NAND interfaces (4 to 128 GB) to a host Proc.

N B SINGH CSIR-CEERI

Page 87: Nbsingh csir-ceeri-semiconductor-activities

Reliability issues in Binary and MLC Flash TechnologyData Reliability : MLC is worse than BinaryLong Term Data Error: Distance between adjacent voltage levels in MLC is much smaller than in Binary flash,MLC flash data error is two order of magnitude w.r.t. Binary,MLC has less long term data stability due to leakage from FG.Program Disturb Error: More in MLC-causes a programming operation on one page to induce a change in bit value on another, unrelated page.Read Disturb Error : Read disturb effect causes a page read operation to induce a permanent, bit value change in one of the read bits.Performance:MLC needs more time for reading a page into Voltage Level Comparisonthe flash buffer, writing a flash buffer into a page, and erasing a flash unit.Sustained Read : voltage gap lessen in MLCSustained write: performance less in MLCFlash Management: Poor due to sequential Programming in MLC and random in Binary.True FFS (Robust Flash Management+ECC+Bad Block Mgmt), Thin Controller (Multi Burst+DMA+EDC+parallel Multi Plane) and Flash media (2 Parallel Planes) to overcome problem.

N B SINGH CSIR-CEERI

Page 88: Nbsingh csir-ceeri-semiconductor-activities

Encryption Methods

Entropy Encoding (for text and lossless data)Run-Length EncodingHuffman CodingDictionary Based Algorithms:LZ77 : Lempel and Ziv Algorithm proposed in 1977 for variable-length input and fixed-length output (V-F) .

Modified LZ77 Algorithm: LZSS by Storer & Szymanki Here, codeword normally consists of Index and Length without the Innovation Character.Variable Length String Matcher for VLSI structures Algorithms for longest Search Content Addressable Memory (CAM) Byte Associated CAM DES AES

N B SINGH CSIR-CEERI

Page 89: Nbsingh csir-ceeri-semiconductor-activities

SALIENT FEATURES OF AES

• AES is a block cipher with a block length of 128 bits.• AES allows for three different key lengths: 128, 192, or 256 bits.• Encryption consists of 10 rounds of processing for 128-bit keys, 12

rounds for 192-bit keys, and 14 rounds for 256-bit keys.• Each round of processing consists of 4 steps.• 128- bit block as 4X4 matrix is called a state matrix.

N B SINGH CSIR-CEERI

Page 90: Nbsingh csir-ceeri-semiconductor-activities

AES OBJECTIVES

• MATLAB SIMULATION FOR AES ALGORITHM.

• RTL IMPLEMENTATION OF THE AES ALGORITHM.

• INCORPORATION OF MORE SECURITY FEATURES.

• VARIOUS CONFIGURATIONS IN IMPLEMENTATION

N B SINGH CSIR-CEERI

Page 91: Nbsingh csir-ceeri-semiconductor-activities

STRUCTURE OF AES

AES Encryption AES DecryptionN B SINGH CSIR-CEERI

Page 92: Nbsingh csir-ceeri-semiconductor-activities

ENCRYPTION KEY AND ITS EXPANSION

2. The four columns words of the key matrix is arranged in form of into a schedule of 44 words. the key expansion takes place on a four-word to four-word basis, in the sense that each grouping of four words decides what the next grouping of four words will be.

Page 93: Nbsingh csir-ceeri-semiconductor-activities

4 STEPS for EACH ROUND of PROCESSING

ENCRYPTION ROUNDS DECRYPTION ROUND

N B SINGH CSIR-CEERI

Page 94: Nbsingh csir-ceeri-semiconductor-activities

Steps of Each Round of Processing

Step#1. Substitute Bytes• This step consists of using a 16 × 16 lookup table to find a replacement

byte for a given byte in the input state array.• The entries in the lookup table are created by using the notions of

multiplicative inverses in GF(28).• Affine transformation function is used in case of encryption and inverse

affine transformation is used in case of decryption. These functions are used for bit scrambling to destroy the bit-level correlations inside each bytes.

N B SINGH CSIR-CEERI

Page 95: Nbsingh csir-ceeri-semiconductor-activities

AES SIMULATION RESULT

• Ciphering simulation

Page 96: Nbsingh csir-ceeri-semiconductor-activities

AES SIMULATION RESULT

• Deciphering simulation

Page 97: Nbsingh csir-ceeri-semiconductor-activities

RESOURCE UTILISATION

“Encryption and Decryption”1.Encryption and Decryption modules are separate.

N B SINGH CSIR-CEERI

Page 98: Nbsingh csir-ceeri-semiconductor-activities

SYNTHESISE AND SIMULATION IN VERILOG HDL

“Encryption and Decryption”1. Encryption and Decryption in a single module.

N B SINGH CSIR-CEERI

Page 99: Nbsingh csir-ceeri-semiconductor-activities

DES General Architecture

Initial Permutation

Round 1

Round 2

Round 16

Final Permutation

RoundKeyGenerator

K1 48-bit

K2 48-bit

K16 48-bit

64-bit plain text

64-bit cipher text

64-bit key

N B SINGH CSIR-CEERI

Page 100: Nbsingh csir-ceeri-semiconductor-activities

Flow Chart of DES (Encryption)

N B SINGH CSIR-CEERI

Page 101: Nbsingh csir-ceeri-semiconductor-activities

Round Function of DES

N B SINGH CSIR-CEERI

Page 102: Nbsingh csir-ceeri-semiconductor-activities

Resource utilization for Triple DES

N B SINGH CSIR-CEERI

Page 103: Nbsingh csir-ceeri-semiconductor-activities

Synthesis Result and Resource Utilization

Conti….N B SINGH CSIR-CEERI

Page 104: Nbsingh csir-ceeri-semiconductor-activities

Key Sending Scheme Modification

Encryption

Decryption

N B SINGH CSIR-CEERI

Page 105: Nbsingh csir-ceeri-semiconductor-activities

Applications of DES/Triple DES

• Electronic financial transactions• Secure data communications• Encrypted data storage • Access control• Smartcard Solutions

N B SINGH CSIR-CEERI

Page 106: Nbsingh csir-ceeri-semiconductor-activities

Miscellaneous TopicsSecurity and Reliability Issues,• Unique ID• One Time Programmable (OTP) page format• Protect critical System Components and Proprietary software (Code) from attacks and alterations using improved coding algorithm Hash algorithm etc.• Reliability issues in High-Speed Interfaces .• Memory Signal Processing(MSP) Technology for error correction and Memory Management.• Process related changes for improved Flash Memory Technology• Write/Erase Endurance and high temperature data retention .• Already ECC/CRC/Huffman Coding for 4/2 bit errors/page but advance and efficient Coding method for error data recovery• 128 GB to 1Tb (8-die) storage HS ONFI 3.0 for 333MTransfer/s for Tablet, Smart Phone and Solid State Drives .• Wired/Wireless Memory data transfer circuit design

N B SINGH CSIR-CEERI

Page 107: Nbsingh csir-ceeri-semiconductor-activities

THANKS

N B SINGH CSIR-CEERI