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TANAKA KIKINZOKU INTERNATIONAL K.K. TANAKA KIKINZOKU INTERNATIONAL K.K.
New Evolution New Evolution of of
Copper Wire Copper Wire
Confidential January 2012Revision 1.0 IEEE-OC
““ConvergenceConvergence””
Sources: Kitco
US$
/oz
Gold price per Ounce during the last decade
In Global Electronics the most emphasizedIn Global Electronics the most emphasizedprecious metal is Goldprecious metal is Gold
VehiclesMobile phonesPCsLCD TVs
etc.
Ru
Pt
Au
Rh
Ag
PdElectrical properties, high corrosion resistance
Electronic devices
Preciousmetal
Question is how to cut the cost while using Gold (Au) metal?
11Reduce the thickness of Au plating on the substrate
Reduce the material cost of PKG
Target is to optimize the combination between the Surface finish material and Wire bond material
22Use alternative metals instead of Au wire
Industry Market Acceptance for Cu Wire Adoption
Top 3-concerns carry over to 2011 & 2012?
Industry Main ConcernsIndustry Main Concernsof Copper Wire Adoptionof Copper Wire Adoption
Source: SEMI
Industry Analysis Copper Wire GrowthIndustry Analysis Copper Wire Growth
Source: Prismark
80,000 kkft => ~24.4Bn meters
Source: Semi
Industry Projection SummaryIndustry Projection SummaryPrismarkPrismark Copper Wire UseCopper Wire Use
2013 2013 ~1.65 Billion Meters~1.65 Billion Meters
Semi Copper Wire UseSemi Copper Wire Use2013 2013 ~ 4.6 Billion Meters~ 4.6 Billion Meters
Aluminum
World Wide Copper Wire Market AdoptionWorld Wide Copper Wire Market Adoption
Source: Tech Search
WW Au, Cu and PCC wire shipped
0%10%20%30%40%50%60%70%80%90%
100%
2010 2011
PCCBare CuGold
Source: SEMI
Source: Tanaka
Tanaka Copper Wire Business & Forecast
Apr
-04
Jul-
04
Oct-
04
Jan
-05
Apr
-05
Jul-
05
Oct-
05
Jan
-06
Apr
-06
Jul-
06
Oct-
06
Jan
-07
Apr
-07
Jul-
07
Oct-
07
Jan
-08
Apr
-08
Jul-
08
Oct-
08
Jan
-09
Apr
-09
Jul-
09
Oct-
09
Jan
-10
Apr
-10
Jul-
10
Oct-
10
Jan
-11
Month/Year
Shipm
ents
Shipm
ents
Tanaka ProjectionsTanaka ProjectionsCopper Wire Ramp Started 2009Copper Wire Ramp Started 2009Copper Wire ShipmentsCopper Wire Shipments
2011 Over 11% Cu Wire Shipments 2011 Over 11% Cu Wire Shipments 2013 Over 40% Cu Wire Shipments2013 Over 40% Cu Wire Shipments
Copper Wire End Markets
Product DistributionProduct Distribution
FCCSP
FCCSP
WB-CSPWB-CSP
Market of Mobile phone & Advanced Portable Systems
Industrial7%
Military/civilaerospace
1%
Automotive7%
Data processing43%
Communication24%
Consumer18%
Industrial8%
Military/civilaerospace
1%
Automotive7%
Data processing40%
Communication27%
Consumer17%
2009 2014
Source: Gartner (2010)
Semiconductor Application Revenue
Source: Gartner
20142009
WB-CSPWB-CSP
Source: Semi
350
300
Bn UnitsN49.088bp
250
150
50
01980 1985 1990 1995 2000 2005 2010 20202015
Bare Die (COB)Through Hole (DIP)
Surface Mount(SO, QFP)
Modified Leadframe(QFN, MLF)
Wire Bond Array Package(BGA, CSP, LGA)
Flip Chip Array Package
Direct Flip Chip(DCA, WLCSP)
Stacked DieStacked PackagePCB Embedded3D
100
200
IC SHIPMENTS BY PACKAGE CATEGORY
Wire bond
Wire bond
Wire bond
Wire bond
Wire bond
Majority of IC interconnects are wire bond
~75%-80%
Technology ItemsTechnology Items HVM (Production) HVM (Production) few years nowfew years now
Qualified & Qualified & HVMHVM
20112011(NPI)(NPI)
2011/2011/20122012
2012/2012/20132013
Wafer TechnologyWafer TechnologyCMOS Low-K ULK /
ELKULK / ELK
ULK / ELK
0.13 um and higher nodes 90/65 nm 45/40
nm 28 nm 22 nm
Technology ItemsTechnology ItemsHVM HVM few few
yearsyears
Qualified Qualified & HVM& HVM
20112011(NPI & (NPI & HVM)HVM)
2011/2011/2012 2012
2012/2012/20132013
Copper WireCopper Wire((Pd_CuPd_Cu/bare Cu)/bare Cu)
Bond Pad Pitch Bond Pad Pitch (um)(um)
65 50 45 40 40
Bond Pad Open Bond Pad Open (um)(um)
58 40 40 35 35
Wire Diameter Wire Diameter (mil)(mil)
0.9 0.7 0.7 0.6 0.6
Copper Copper WirebondWirebond Silicon Node Silicon Node RoadmapRoadmap
TANAKA Cu-Bonding Wires
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Copper Technical Copper Technical ChallengesChallenges
Confidential January 2012
Need N2 or Forming Gas ((Gas necessary for Copper wb)
Higher Mechanical Strength (FAB hardness, Work Hardening)
Narrow parameter window at 1st &2nd bonding process
Require halogen free resin
Need additional investments (Cu bonder, Forming gas piping)
Advantages
Disadvantages
Low Material Cost (Low Material Cost (Approx 30-50% lower than Au) Better Conductivity (Approx 20% better than Au)Higher Fusing Current (Approx 30% higher than AHigher Fusing Current (Approx 30% higher than Au))Low Reaction Rates (Cu/Al IMC @ 150Low Reaction Rates (Cu/Al IMC @ 150--300C 10x slower Au/Al) 300C 10x slower Au/Al)
Copper Wire versus Gold Wire
First Bond Second Bond
High ParametersNarrow Range
Cu Wire ParametersNarrow Range
Low ParametersWide Range
Std ParametersWide RangeParameter Range
Low
High
Au
Cu
Cu Wire Bonding Process Window ComparisonCu Wire Bonding Process Window Comparison
➮Copper wire is harder than Gold wire
Cu
Parameter Range
Low
High
Optimum Parameters
Low Parameters
High Parameters
Aluminum splashingshorting to adjacent pad
Lifted Metal
▪ Lifted Metal occurs at lower side of optimum parameters
Existing Common problem in Cu bonding
Parameter Range
Low
High
Cu Optimum Parameters
Low Parameters
High Parameters
Existing Common problem in Cu bondingShort tail / No tail issue
Cu
Au
Parameter Range
Low
High
PdCu closer to Au wire wbperformance
How to achieve Process Window closer to Au for Fine Pitch Bonding???
N2
N2H2
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Palladium Coated Palladium Coated CopperCopper
Confidential January 2012
Atomic # 46 (Member of the Platinum Group)Atomic # 46 (Member of the Platinum Group)½½ worlds supply goes into catalytic convertersworlds supply goes into catalytic convertersPalladium is used as an oxidation catalystPalladium is used as an oxidation catalystPalladium is 10% harder than platinumPalladium is 10% harder than platinum
Pt is harder than AuPt is harder than AuPd softer than Cu (good adhesion to Cu wire)Pd softer than Cu (good adhesion to Cu wire)
3N Copper FAB is 30% harder than Au FAB3N Copper FAB is 30% harder than Au FABPdCuPdCu alloy FAB harder than bare Cu FABalloy FAB harder than bare Cu FAB
Oxidation Free (longer storage/shelf & bonder life)Oxidation Free (longer storage/shelf & bonder life)Copper and Gold tensile strengths are comparableCopper and Gold tensile strengths are comparable
Copper has higher elongation than Gold which means Copper can Copper has higher elongation than Gold which means Copper can withstand plastic deformation longerwithstand plastic deformation longer
Palladium Copper bonded products are Palladium Copper bonded products are ‘‘oneone--toto--oneone’’ pin compatible pin compatible with Au bonded products.with Au bonded products.
No form, fit or function changeNo form, fit or function changeSMT and System level customers do not need to do anything SMT and System level customers do not need to do anything different in receipt and use of the Palladium Copper productsdifferent in receipt and use of the Palladium Copper products
Palladium Coated Copper WirePalladium Coated Copper Wire
(Gen I) Palladium Coated(Gen I) Palladium Coated Wire: CLRWire: CLR--11CCopper bonding wire, opper bonding wire, LLong life & ong life & RRobust stitch bondobust stitch bond
Comparison with Bare Copper wireAdvantage Disadvantage
Longer Spool Lengths (1km – 5km/spool)Wider 2nd bond window/Higher 2nd bond pullChemical StabilityBetter HAST (BGA)Longer shelf life; 6 months after manufacturing date, 1 month after opening package (bare Cu 1-week after opening)
Price is higher than bare copper(Au relative value 1.0, bare Cu 0.2, PdCu 0.4 in HVM)
FAB is harder (possible pad damage)Capillary Life
4N Bare Cu wire
Thin Coated layerCLR-1 φ20um
Manufacturing Process Comparison Copper Wire
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Next Generation Next Generation
Confidential January 2012
…Bonding Wire
Palladium CoatedPalladium Coated wire: CLRwire: CLR--1A1A
Compare with CLR-1 (Gen I)Advantage Disadvantage
Wider 2nd bond window/Higher 2nd bond pull Slightly softer FABReduce capillary dragFine pitch applicationsSSB bonding**Same Cost as CLR-1 (Gen I)
New QualificationPCN
4N Bare Cu wire
Pd Coated layer
Thin Au layer
CLR-1 (Gen I)
(Gen II)(Gen II)
Capillary drag force set up
Measuring device of Capillary drag force
①
②
③
④
【Measurement condition】・Wire drag speed:10(mm/sec)・Wire drag angle (deg)
①55, ②60, ③65, ④70, ⑤75, ⑥80・Measurement length:100(mm)・Capillary :SPT・Capillary condition
①New,・Wire type
①CLR-1Aφ18um,②CLR-1φ18um③Competitorφ18um
【Measurement result】・Summarized by from four
directions data averaged
Angle
Capillary drag force set upCLR-1 CLR-1A EX-1p_sp1 EX-1p_sp2
55 0.06 0.01 0.17 0.1660 0.14 0.04 0.48 0.2365 0.19 0.09 0.65 0.4070 0.28 0.15 0.81 0.6975 0.41 0.25 0.94 1.0880 0.59 0.34 - -
AVGAngle(°)
Competitor n=2Competitor n=1CLR-1 CLR-1A EX-1p_sp1 EX-1p_sp255 0.06 0.01 0.17 0.1660 0.14 0.04 0.48 0.2365 0.19 0.09 0.65 0.4070 0.28 0.15 0.81 0.6975 0.41 0.25 0.94 1.0880 0.59 0.34 - -
AVGAngle(°)
Competitor n=2Competitor n=1CLR-1 17.97
CLR-1A 17.73EX-1p 17.64
mg値(um)
Competitor
CLR-1 17.97CLR-1A 17.73EX-1p 17.64
mg値(um)
Competitor
0.0
0.2
0.4
0.6
0.8
1.0
1.2
55 60 65 70 75 80
Angle(°)
Cap
illar
y dr
ag A
ve(g
f)
CLR-1
CLR-1A
EX-1p_sp1
EX-1p_sp2
W ire Breaking !
Competitor n2Competitor n1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
55 60 65 70 75 80
Angle(°)
Cap
illar
y dr
ag A
ve(g
f)
CLR-1
CLR-1A
EX-1p_sp1
EX-1p_sp2
W ire Breaking !
Competitor n2Competitor n1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
55 60 65 70 75 80
Angle(°)
Cap
illar
y dr
ag A
ve(g
f)
CLR-1
CLR-1A
EX-1p_sp1
EX-1p_sp2
W ire Breaking !
Competitor n2Competitor n1
Au/Cu/Au/Cu/PdCuPdCu Hardness & Compression ComparisonsHardness & Compression Comparisons
FAB Hv hardness Comparisons
8076
74 72
60
65
70
75
80
85
90
95
100
Coating A Coating B CLR-1 TCA1
HV
n=1n=2n=3n=4n=5AVEMAXMIN
FAB make・Wire: TCA1, CLR-1, Competitor φ20um・FAB: φ38um・Bonder: UTC-3000・EFO: 80mA, 0.12-0.14ms・Gas: N2+5%H2, 0.5L/min・Measurement count n=3-5
Hv hardness【Measurement Equipment】・Hardness Tester :MVK-3 (AKASHI)【Measurement condition】・Force :2 gf・Press Speed :3μm/sec・Hold time :10sec・Measurement count n=5 each
Molded by epoxy resinPolish and buff
Ion milling
Ar+
Hv hardness
FAB Hv hardness : Competitor1> Competitor2> CLR-1A> TCA1
CLR-1ACompetitor1 Competitor2 TCA1
FAB Compression Test (Gen I/Gen II vs. Competitor)FAB Compression Test (Gen I/Gen II vs. Competitor)
Compression Test:"CLR-1A" is equal to "CLR-1“
2nd Bond Process Window PPF QFN2nd-Bond parameter window
Bonder:UTC-3000Wire dia. :20umCapillary:SU-25080-385F-ZU34TPGas:N2-5%H2 0.5l/minFrame :PPF FlatBond Temp.:240degC160wires
←Pd ←0.03um
Ni ←0.8um
Cu フレーム
Au = 0.006um
Frame
The parameter window of CLR-1A spreads in the low condition side in comparison with Competitor wire.
160wires
US190 US200 US210 US220 US240 US250 US260 US270 US280
CLR-1A
Competitor
:Non stop:1stop:2stops up
SHTLNSOL
【Bonding condition】 【Frame structure】 【Machine Stop】
0123456789
10
US190 US200 US210 US220 US240 US250 US260 US270 US280
2nd
Pull
Load [
gf]
CLR-1A
Competitor
【2nd Bond】Force:15gn=20 AVG.
Bond parameter
2nd Bond stitch pull PPF QFN Data ComparisonEvaluation of wire pull load
Bonder:UTC-3000Wire dia. :20umCapillary:SU-25080-385F-ZU34TPGas:N2-5%H2 0.5l/minFrame :PPF FlatBond Temp.:240degC
1000um
250um
PullPull condition
Comparisons (Gen I vs. Gen II) CLRComparisons (Gen I vs. Gen II) CLR--1 & CLR1 & CLR--1A1A
50
55
60
65
70
75
80
Lot.A Lot.B Lot.C Lot.D
CLR-1A CLR-1
Bre
akin
g Loa
d (m
N)
6
9
12
15
Lot.A Lot.B Lot.C Lot.D
CLR-1A CLR-1
Elo
nga
tion
(%)
Mechanical Property:"CLR-1A" is equal to "CLR-1“Wedge pull strength and Ball shear response is equal
CLRCLR--1A (Gen II) SSB bonding1A (Gen II) SSB bonding
CLRCLR--1A (Gen II) SSB bonding Comparison Data1A (Gen II) SSB bonding Comparison Data
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ReliabilityReliability
Confidential January 2012
UHAST Comparisons (Gen I vs. bare Copper)UHAST Comparisons (Gen I vs. bare Copper)
UHAST Halogen Free MC:"CLR-1“ is better than bare Copper
HAST of CLR-1 bonded BGA and molded halogen-free resin is better than bare copper.
OK boundary
Resistance UPboundary0
20
40
60
80
100
0 100 200 300 400 500Strage time [hr]
Failu
re ra
tio (%
)Fa
ilure
=ini
tial r
esis
tann
ce ×
30%
UP
TCB1TCA1CLR-1
UHAST, 130degC, 85%rh, BGA-HF resin, WD 25um
Storage time [hr]
UHAST Comparisons (Gen I vs. Gen II)UHAST Comparisons (Gen I vs. Gen II)
UHAST w/Halogen MC:"CLR-1A" is equal to "CLR-1“
UHAST Comparisons (Gen I vs. Gen II)UHAST Comparisons (Gen I vs. Gen II)
UHAST Halogen Free MC:"CLR-1A" is equal to "CLR-1“
HTS Comparisons (Gen I/Gen II vs. Competitor)HTS Comparisons (Gen I/Gen II vs. Competitor)
HTS:"CLR-1A" is better than both CLR-1 & Competitor
Mechanism of HAST-BGA failures with Copper Wire
Cu/Al boundary was attacked by moisture on HAST test of BGA.
H2O
Al splash
H2O
Al splash
The BGA substrate is bent more easily by heat & Assy handling compared with lead frames. Water can seep into boundary of Al splash and Cu 1st bond.
It is presumed that the possibility of preventing moisture attack is HIGH if Pd exists on the copper surface.
Bare Cu
Pd/Cu
Al
CuCu9Al4, Cu2Al
CuAl
CuAl2
Al
CuCu9Al4, Cu2Al
CuAl
CuAl2
Oxidation
O-H-
H-
O- Al2O3
Al
CuCu9Al4, Cu2Al
CuAl
CuAl2
Al
CuCu9Al4, Cu2Al
CuAl
CuAl2
Al
CuCu9Al4, Cu2Al
CuAl
CuAl2
Al
CuCu9Al4, Cu2Al
CuAl
CuAl2
Oxidation
O-H-
H-O-O-H-H-
H-H-
O-O-O- Al2O32-
2-
Al
CuCu9Al4, Cu2Al
CuAl
CuAl2
Al
CuCu9Al4, Cu2Al
CuAl
CuAl2
Oxidation
O-H-
H-
O- Al2O3
Al
CuCu9Al4, Cu2Al
CuAl
CuAl2
Al
CuCu9Al4, Cu2Al
CuAl
CuAl2
Al
CuCu9Al4, Cu2Al
CuAl
CuAl2
Al
CuCu9Al4, Cu2Al
CuAl
CuAl2
Oxidation
O-H-
H-O-O-H-H-
H-H-
O-O-O- Al2O32-
2-
Al
Cul4, Cu2Al
CuAl
uAl2
Al
Cul4, Cu2Al
CuAl
uAl2
Al
Cul4, Cu2Al
CuAl
uAl2
Pd-Cu
Pd-Al
Pd
Al
Cul4, Cu2Al
CuAl
uAl2
Al
Cul4, Cu2Al
CuAl
uAl2
Al
Cul4, Cu2Al
CuAl
uAl2
Al
Cul4, Cu2Al
CuAl
uAl2
Al
Cul4, Cu2Al
CuAl
uAl2
Al
Cul4, Cu2Al
CuAl
uAl2
Pd-Cu
Pd-Al
Pd
Mechanism of HTS LF failures with Copper Wire
Al
CuCu9Al4, Cu2Al
CuAl
CuAl2
<1um
Al
CuAlBr3
CuAl2
CuBr-
Al
Cu
Cu/Al IMC
Aging
Cu/Al + Br - → Al2Br3 + Cu*Aluminum bromide MP. 97.5 deg C*Water-soluble
Cu/Al boundary was attacked by halogen contained in resin on HTS test.
Even halogen free resin, halogens of less than 0.09wt%. *JPCAstandard can exist(JPCA-ES-01-1999)
Cu/Al IMC change to aluminum bromide by priority.
Bromination
Cu
Al
CuCrack
CuAl2melt
CuCu
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Fine Pitch Fine Pitch PdCuPdCu
Confidential January 2012
PdCu
45
Platform :Device : BGA substrate with 1.4um Al metallizationWire type : Tanaka Pd coated copper 0.7mil Wire bonder : ASM Eagle 60APCapillary : SU-20058-233E-ZU36TP-200
Ultra Fine Pitch Capability – 45um BPP with 0.7mil Pd Copper wire
Ball size 29umBall size + Al splash = 32‐33um
Wire Pull Ball Shear
Ave 7.344 8.9562
Max 7.862 9.619
Min 6.74 8.402
std. dev 0.272 0.326
after ball shear– Al shear
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Plating OverviewPlating OverviewPdCuPdCu Wire PerformanceWire Performance
Confidential January 2012
Lead Frame Plating TestedLead Frame Plating Tested
【Electro Ag plating】 【Electro Au plating】 【Pd-PPF】
Ra=0.236umRz=4.867um
Ra=0.137umRz=1.289um
Ra=0.078umRz=1.206um
←
Pd ←0.03um
Ni ←0.8um
Cu Frame
Au = 0.006umAu ←0.2um
Ni ←1um
Cu ←1um
42Alloy Frame
Ag ←2.5um Min
Cu ←0.005um
42Alloy Frame
Parameter window of 2nd bondParameter window of 2nd bond
20 25 30 35 40 45 50 55 60 65 70 7540 0 0 0 0 0 0 0 0 0 0 0 0506070 0 0 0 0 0 0 0 0 0 0 0 0
US
Force(g)
Agめっき
20 25 30 35 40 45 50 55 60 65 70 7540 50 26 11 1 0 0 0 0 0 0 0 050 7 0 0 0 060 0 0 0 0 070 0 0 0 0 0
USAuめっき
Force(g)
20 25 30 35 40 45 50 55 60 65 70 7540 50 50 41 11 0 0 0 050 50 50 33 16 0 0 0 060 50 50 30 9 0 0 0 070 4 0 0 0 0 0 0 0
Force(g)
USPdめっき
NSOL wire count in 50wires
Ag plating
Au plating
Pd plating
Wire diameter : 20um
20 25 30 35 40 45 50 55 60 65 70 7540 50 32 1 0 0 0 0 050 50 50 46 34 14 2 0 060 50 50 28 16 5 1 0 070 43 26 7 3 0 0 0 0
AgめっきUS
Force(g)
20 25 30 35 40 45 50 55 60 65 70 7540 50 50 40 1 0 0 0 0 0 0 050 50 43 3 0 0 0 0 060 8 0 0 070 10 1 0 0 0
AuめっきUS
Force(g)
20 25 30 35 40 45 50 55 60 65 70 7540 50 50 38 0 0 0 0 050 50 50 46 36 1 0 0 060 50 50 50 37 11 0 0 070 50 49 33 12 2 0 0 0
PdめっきUS
Force(g)
Ag plating
Au plating
Pd plating
-Bare Cu 4N wire –(TCA1)
-Pd coated Cu wire –(CL1-A)
⇒不圧着:0本⇒不圧着:5本以下⇒不圧着:6本以上
NSOL=0 /50NSOL<5 /50NSOL>=5 /50
Various Wire Process WindowsVarious Wire Process WindowsPCB PlatingPCB Plating
【ENEPIG】
←
Pd ←0.05um
Ni ←5-7um
Cu PCB
Au = 0.05-0.10um
【ENIG】
←
Ni ←5-7um
Cu PCB
Au = 0.1-0.2um
Surface finish material on PCB
Wire bond materialAu wire(GFC)
Ag wire (SEA)
Bare Cu wire (TCA1)
Pd coated Cu wire (CLR1)
Pd coated Cu wire(CLR1A)
- Electroless Plating process -
0
0
0
0
45
0000000000070
0000000000060
0000000000050
0000000000040
Force(g)
7570656055504035302520
Ultrasonic energy (mA)Process
Au wire (GFC) Ag wire (SEA)ENIG process (ENIG process (ElectrolessElectroless Ni/Au)Ni/Au)
Au:0.2um
0
0
0
0
45
0000000000070
0000000000060
0000000000050
0000000000040
Force(g)
7570656055504035302520
Ultrasonic energy (mA)Process
ENEPIG process (ENEPIG process (ElectrolessElectroless Ni/Pd/Au)Ni/Pd/Au)
Pd:0.05umAu:0.05um
Pd:0.05umAu:0.10um
0
0
0
0
45
0000000000070
0000000000060
0000000000050
0000000000040
Force(g)
7570656055504035302520
Ultrasonic energy (mA)Process
0
0
0
0
45
0000000000070
0000000000060
0000000000050
0000000000040
Force(g)
7570656055504035302520
Ultrasonic energy (mA)Process
0
0
0
0
45
0000000000070
0000000000060
0000000000050
0000000000040
Force(g)
7570656055504035302520
Ultrasonic energy (mA)Process
0
0
0
0
45
0000000000070
0000000000060
0000000000050
0000000000040
Force(g)
7570656055504035302520
Ultrasonic energy (mA)Process
0
0
0
0
45
0000000000070
0000000000060
0000000000050
0000000000040
Force(g)
7570656055504035302520
Ultrasonic energy (mA)Process
0
0
0
0
45
0000000000070
0000000000060
0000000000050
0000000000040
Force(g)
7570656055504035302520
Ultrasonic energy (mA)Process
Au:0. 1um
⇒不圧着:0本⇒不圧着:5本以下⇒不圧着:6本以上
NSOL=0 /20NSOL<5 /20NSOL>=5 /20
Au wire (GFC) Ag wire (SEA)
Parameter window of 2nd bond (ENIG Parameter window of 2nd bond (ENIG vsvs ENEPIG )ENEPIG )
0
0
2
3
45
000000000122070
0000000412202060
00000061220202050
00000171520202040
Force(g)
7570656055504035302520
Ultrasonic energy (mA)Process
Bare Cu wire (TCA1) Pd coated Cu wire (CLR1)
ENIG process (ENIG process (ElectrolessElectroless Ni/Au)Ni/Au)
Au:0.2um
0
0
0
0
45
00000000001370
0000000002560
00000000071050
000000000101540
Force(g)
7570656055504035302520
Ultrasonic energy (mA)Process
0
0
0
0
45
0000000000070
0000000000060
0000000001450
00000000041040
Force (g)
7570656055504035302520
Ultrasonic energy (mA)Process
Pd coated Cu wire (CLR1A)
ENEPIG process (ENEPIG process (ElectrolessElectroless Ni/Pd/Au)Ni/Pd/Au)
Pd:0.05umAu:0.05um
Pd:0.05umAu:0.10um
0
0
0
3
45
00000000031170
00000000172060
0000002414202050
00000051320202040
Force(g)
7570656055504035302520
Ultrasonic energy (mA)Process
0
1
2
5
45
0000000012202070
0000002118202060
0000004820202050
00000271620202040
Force(g)
7570656055504035302520
Ultrasonic energy (mA)Process
Bare Cu wire (TCA1) Pd coated Cu wire (CLR1) Pd coated Cu wire (CLR1A)
0
0
0
0
45
0000000002470
0000000015860
00000000271250
00000002491640
Force(g)
7570656055504035302520
Ultrasonic energy (mA)Process
0
0
0
0
45
00000000141170
00000000371460
00000014691650
000000359132040
Force(g)
7570656055504035302520
Ultrasonic energy (mA)Process
0
0
0
0
45
0000000000070
0000000000060
0000000001350
00000000151240
Force(g)
7570656055504035302520
Ultrasonic energy (mA)Process
0
0
0
0
45
0000000000270
0000000011460
0000000025850
00000001381640
Force(g)
7570656055504035302520
Ultrasonic energy (mA)Process
0
0
6
10
45
000000000122070
0000002610202060
000013131620202050
000235132020202040
Force(g)
7570656055504035302520
Ultrasonic energy (mA)Process
0
0
0
0
45
00000000032070
00000000362060
000000028202050
0000003711202040
Force(g)
7570656055504035302520
Ultrasonic energy (mA)Process
0
0
0
0
45
0000000000670
00000000021060
000000001121550
000000025152040
Force(g)
7570656055504035302520
Ultrasonic energy (mA)Process
Au:0. 1um
⇒不圧着:0本⇒不圧着:5本以下⇒不圧着:6本以上
NSOL=0 /20NSOL<5 /20NSOL>=5 /20
Wire diameter : 20umAging condition : 175deg.C-4Hrs.
Parameter window of 2nd bond (ENIG Parameter window of 2nd bond (ENIG vsvs ENEPIG )ENEPIG )
New release !!
SEA ( Silver Alloy Wire )Please contact us for more information
Thank you for your attention!Thank you for your attention!
PP--5555
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