NGL Brainerd 1

NGL: Next Generation Lithography• Trends>>>• Exposure Tools: Higher NA and OAI• Masks: OPC and PSM• Wavelengths: 157 nm >>>• Electron Beam Lithography (EBL) : Direct write Maskless• Ion Beam Lithography (IBL) : Projection He+ ions

Maskless

• X-ray Lithography (XRL): Proximity• EUV: 13.4 nm Projection X-ray• SCALPEL: Projection e-beam• (All require very specialized masks!!$$$$)

NGL Brainerd 2

NGL: Next Generation Litho Exposure Tool Road map

NGL Brainerd 3

NGL: Next Generation Litho

• 30 years of optical lithography improvement has produced a 47% increase in number pixels printed each year!

• Prediction once again is that Optical lithography dies in 8 years! This is the prediction for the past 20 years!

• Life after optical lithography is now predicted to be one that does not use a mask>> direct write type.

• For 50nm linewidths at 60 WPH requires data rates of 10 Tb/sec (1e12/sec) and data files at 16 GB!

NGL Brainerd 4

NGL: Next Generation Litho 157 nm

from D.C.Shaver MIT Lincoln Labs update : Jan. 14, 2000

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NGL: Next Generation Litho 157 nm resolution

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NGL: Next Generation Litho 157 nm PSM

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NGL: Next Generation Litho 157 nm Challenges

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NGL: Next Generation Litho 157 nm materials

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NGL: Next Generation Litho 157 nm VUV transmission of Fused Silica

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NGL: Next Generation Litho 157 nm Absorption

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NGL: Next Generation Litho 157 nm Material Absorption

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NGL: Next Generation Litho 157 nm Status

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NGL: Next Generation Litho

• Choices after 157 nm optical:• Vacuum systems• E-beam: no mask >. Large data sets• EUV: Extreme UV ( 13 nm): projection ; special 4X masks• X-ray ( 1 nm): 1X special masks• SCALPEL: (3.7pm) Scattering with Angular Limitation

Projection Electron Beam Lithography 4X special masks• Ion Beam Lithography: IBL

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NGL: Next Generation Lithohttp://www.bell-labs.com/project/SCALPEL/advantages.html

• Comparison table for NGLs

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NGL: Next Generation Lithohttp://www.cnf.cornell.edu/SPIEBook/SPIE1.HTM

• Ebeam: Direct write: no mask.

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NGL: Next Generation Lithohttp://www.cnf.cornell.edu/SPIEBook/SPIE1.HTM

• Ebeam: Direct write: Large data sets Long write time

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NGL: Next Generation Lithohttp://www.cnf.cornell.edu/SPIEBook/SPIE1.HTM

• Ebeam: Direct write: no mask >. Large data sets Long write time

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NGL: Next Generation Lithohttp://www.cnf.cornell.edu/SPIEBook/SPIE1.HTM

• Photoresists that are sensitive to e-beams are different that UV type photoresists and require special chemicals

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NGL: Next Generation Lithohttp://www.ee.pdx.edu/~jeske/litho/ionbeamlitho.html

• Ion Beam Lithography: IBL: masklessDescription:

This is a variation of the electron beam lithography technique, using an focused ion beam (FIB) instead of an electron beam. In a similar setup to scanning electron microscopes, an ion beam scans across the substrate surface and exposes electron sensitive coating. A grid of pixels is superimposed on the substrate surface, each pixel having a unique address. The pattern data is transferred to the controlling computer, which then directs the electron beam as to realize the pattern on the substrate pixel by pixel. The ion beam used is either a Guassianround beam or Variable Shaped Beam (VSB). There are two methods of scanning the beam over the substrate surface to write the pattern data. With raster scan, the electron beam is scanned across lines of pixels and the wafer is shifted to the next line. With vector scan, an area of an individual chip is selected, and the beam draws out the features in that area one-by-one.

NGL Brainerd 20

NGL: Next Generation Litho• Ion Beam Lithography: IBL• Description:

A focused ion beam (FIB) tool that uses 75keV He ions to expose the resist. The FIB system consists of an ion source, a beam defining aperture, and electrostatic lens for focusing the beam. Higher resolution limits should be obtainable because resists are more sensitive to the higher mass of ions over electrons, and the higher mass of ions are less prone to backscattering which is one of the limitations in e-beam lithography.

• The FIB system is characterized by the spot size, current, field size, and writing speed. Coulombic interaction between ions limits the current and throughput. A parallel system will be pursued such that the lithography process can be maskless. Elimination of the mask would allow finer

geometries to be patterned.

NGL Brainerd 21

NGL: Next Generation Litho• Ion Beam Lithography: IBL

• Advantages:• Computer-controlled beam

• No mask is needed

• Can produce sub- 0.1 µm features

• Resists are more sensitive than electron beam resists

• Diffraction effects are minimized

• Less backscattering occurs

• Higher resolution

• Ion beam can detect surface features for very accurate registration

NGL Brainerd 22

NGL: Next Generation Litho• EUV: Extreme UV ( 13.4 nm): projection ; special 4X

reflective masks

NGL Brainerd 23

NGL: Next Generation Litho• EUV: Extreme UV ( 13.4 nm): projection ; special 4X

reflective masks: Production for 70nm node 2005

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NGL: Next Generation Litho• EUV: Extreme UV ( 13.4 nm): projection ; Intel

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NGL: Next Generation Litho• Reflective masks EUV: Extreme UV ( 13.4 nm):

projection ; Intel

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NGL: Next Generation Litho• Costs EUV: Extreme UV ( 13.4 nm): projection

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NGL: Next Generation Litho• Costs EUV: Extreme UV ( 13.4 nm): projection

Advantages

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NGL: Next Generation Litho• X_Ray Lithography (XRL): sub 50A wavelength proximity

printing:• Over 20 years old: But still not in mainstram manufacturing• Very expensive and complex• IBM has invested quite a bit in this technology.• Has been termed “the technology of the future and always will be!”

NGL Brainerd 29

NGL: Next Generation Litho• X_Ray Lithography (XRL): references• http://www.xraylith.wisc.edu/overview/cxrlibm.html• http://www.mmc.co.jp/english/business/rd01.html• http://courses.nus.edu.sg/course/phyweets/Projects98/Masking/masksfor1.htm• http://www.usa.canon.com/indtech/semicondeq/pdf/news_tech.pdf

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NGL: Next Generation Litho• X_Ray Lithography (XRL): sub 50A wavelength:

Proximity membrane masks

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NGL: Next Generation Litho• X-ray ( 1 nm): SR ( Storage Ring) X-Ray Concept

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NGL: Next Generation Litho• X-ray ( 1 nm): X-Ray Sources

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NGL: Next Generation Litho• X-ray ( 1 nm): X-Ray Sources

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NGL: Next Generation Litho• X-ray ( 1 nm): 1X special masks

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NGL: Next Generation Lithohttp://courses.nus.edu.sg/course/phyweets/Projects98/Masking/masksfor1.htm

• X-ray ( 1 nm): Photoresist pattern results

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NGL: Next Generation Lithohttp://www.cnf.cornell.edu/SPIEBook/spie5.htm

• SCALPEL: Scattering with Angular Limitation Projection Electron Beam Lithography

87. S. D. Berger, J. M. Gibson, R. M. Camarda, R. C. Farrow, H. A. Huggins, J. S. Kraus, "Projection electron-beam lithography: A new approach," J. Vac. Sci. Technol. B9(6) 2996 (1991).

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NGL: Next Generation Lithohttp://www.bell-labs.com/project/SCALPEL/tool.html#Alignment/Overlay

• SCALPEL: (3.7pm) Scattering with Angular Limitation Projection Electron Beam Lithography

• Vacuum system• Website:• http://www.bell-

labs.com/project/SCALPEL/• Can use 193 nm CAR DUV

photoresists

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NGL: Next Generation LithoBell labs

• SCALPEL: (3.7pm) Scattering with Angular Limitation Projection Electron Beam Lithography 4X special masks

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NGL: Next Generation LithoBell labs: http://www.bell-labs.com/project/SCALPEL/mask.html

• SCALPEL: (3.7pm) Scattering with Angular Limitation Projection Electron Beam Lithography 4X special masks

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NGL: Next Generation Litho:SCALPEL: (3.7pm)

http://www.bell-labs.com/project/SCALPEL/description.html

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NGL: Next Generation Litho:SCALPEL: (3.7pm)

http://www.bell-labs.com/project/SCALPEL/description.html

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7. Conclusionsfrom Brainerd

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7. Conclusionsfrom http://www.waynerad.com/future/mooreslaw.html

Moore's Law: The FutureFrom March 13th, 2000

Here's my predictions for the future :)

December 25, 2001 2 GHZ chips from Intel and/or AMD October 16, 2003 4 GHZ August 6, 2005 8 GHZ May 27, 2007 16 GHZ March 17, 2009 32 GHZ January 1, 2011 64 GHZ October 26, 2012 128 GHZ <-- end of photolithographyAugust 17, 2014 256 GHZ equivalent June 7, 2016 512 GHZ March 28, 2018 1024 GHZ = 1 TeraHzJanuary 17, 2020 2048 GHZ = 2 TeraHzNovember 7, 2021 4096 GHZ = 4 TeraHz

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7. Conclusionsfrom http://www.waynerad.com/future/mooreslaw.html

Moore's Law: The FutureContinued…..August 28, 2023 8192 GHZ = 8 TeraHzJune 18, 2025 16384 GHZ = 16 TeraHzApril 9, 2027 32768 GHZ = 32 TeraHzJanuary 28, 2029 65536 GHZ = 64 TeraHzNovember 18, 2030 131072 GHZ = 128 TeraHzSeptember 8, 2032 262144 GHZ = 256 TeraHzJune 30, 2034 524288 GHZ = 512 TeraHzApril 19, 2036 1048576 GHZ = 1 PetaHzFeb 8, 2038 2097152 GHZ = 2 PetaHzNovember 30, 2039 4194304 GHZ = 4 PetaHzSeptember 19, 2041 8388608 GHZ = 8 PetaHzJuly 11, 2043 16777216 GHZ = 16 PetaHzMay 1, 2045 33554432 GHZ = 32 PetaHzFebruary 19, 2047 67108864 GHZ = 64 PetaHzDecember 10, 2048 134217728 GHZ = 128 PetaHzAugust 8, 2050 268435456 GHZ = 256 PetaHz

Around 2050 the exponential growth curve should start turning into an S-curve.