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Supriyo Datta
Lessons from nanoelectronics
“ No trees were killed to send this message, however,
Note at the end of an e-message
a large number of electrons were terribly inconvenienced ”
2. What is “voltage” ?
1. How electrons are “inconvenienced?”
3. “Spin voltage” à New class of devices
https:/nanohub.org/groups/courses/fon1 ,2
Supriyo Datta
What is a transistor?
18
Resistance
R = VI
A controlled resistor
VG = 0
R = 108ohms
VG = 1 volt
R = 104ohms
n-MOS
VG = 0
VG = 1 volt
p-MOS . VG
How electrons are “inconvenienced”
Supriyo Datta
E
D(E)
How resistance is controlled
OFF ON n-MOS
ON OFF
17
. VG
µFermiEnergy
σ = q2 n τm
Drude formula
p-MOS
How electrons are “inconvenienced”
Supriyo Datta
Why electrons flow
Channel
µ E
D(E)
µ
Equilibrium
Current flows only in small energy window
Hard to understand if we say that electric field
drives electrons
µ E
q V
D(E)
16 How electrons are “inconvenienced”
Supriyo Datta
Conductance
D: Density of states t : transit time
D. qV2
= Iq
× t
PhD’s /year
# of PhD students
Time spent getting PhD =
G ≡I
V=
q2D
2t
Electrons /second
# of electrons in channel
Time spent in channel =
15
I ~ G(E) f1(E)− f2 (E)( )No energy loss in channel
How electrons are “inconvenienced”
Supriyo Datta
Ballistic Conductance
Channel Source
Drain
L W
tB = Lν
GB
W à 2 tD
→ h*M
G = q2 D2t
D ~ WL
M = 2,4,6,8, ……
GB ~ W
14
2 tD
= h
hq2
≈ 25 KΩ
ΔE ~ h2t
D = 1ΔE
~ 2th
M q2
h=GB
How electrons are “inconvenienced”
Supriyo Datta
The New Perspective
1+L
mfp
⎛⎝⎜
⎞⎠⎟
0.1 mm
10 µm
1 µ m
0.1 µm
10 nm
1 nm
0.1 nm
2015
1985
R =h
q2
1
M
hq2
≈ 25 KΩ
13
Atoms G = q2 D2t
1ρ≡ σ = q2 n τ
mDrude
formula
= ρW
LVI
≡ R
mfp: mean free path
L
https://nanohub.org/groups/courses/fon1, 2
Kubo formula
Supriyo Datta
Where is the Resistance?
12
µ1
µ2
qV
RB2
RB2
RBLmfp
R = RB 1+ Lmfp
⎛⎝⎜
⎞⎠⎟
What is “voltage?”
Standard view:
Follow the heat !
Ø Joule Heating: I2R
Follow the voltage
Ø Voltage drop: IR
Supriyo Datta
Diffusion Equation
11
µ1
µ2
qV
RB2
RB2
RBLmfp
R = RB 1+ Lmfp
⎛⎝⎜
⎞⎠⎟
µ(x = 0) = µ1µ(x = L) = µ2
What is “voltage?”
J = − σqdµdx
µ+ (x = 0) = µ1µ− (x = L) = µ2
X µ+
µ-
Supriyo Datta
Ballistic Flow
10
µ1
µ2
qV
RB2
RB2
~ 0 R = RB 1+ Lmfp
⎛⎝⎜
⎞⎠⎟
What is “voltage?”
µ+
µ-
Lucknow NH-6 Allahabad NH-24B
Supriyo Datta
Localized Scatterer
9
µ1
µ2
qV
RB2
RB2
RB1−TT → R = RB
1T
What is “voltage?”
µ+
µ-
T Lucknow Allahabad NH-24B
Supriyo Datta
I2R is NOT localized
8
µ1
µ2
qV
RB2
RB2
RB1−TT
What is “voltage?”
µ+
µ-
T
T
1
0
µ+
µ1
↑ f (E)
1
0
EC
Even if R is localized
Supriyo Datta
Distributed Scatterers
7
µ1
µ2RB2
RB2
RBLmfp
“Spin voltage”
µ+
µ-
Topological Insulators
Bi2Te3
Channel
up
dn
Channel
up
dn
à µup
µdn ß
Supriyo Datta
Measuring Spin Voltage
6
µ1
µ2
µ+
µ-
à µup
µdn ß
µup − µdn = qI RB
(µP − µup ) g1 +(µP − µ dn ) g2 = 0
µP (+M )− µP (−M ) =
(µup − µ dn ) g1 − g2g1 + g2
FM
“Spin voltage”
µP
g1 g2
up
dn
Spin current ≠ 0
Supriyo Datta
Experiment
µP (+M )− µP (−M )
= qI RB PM y.M
THEORY Hong et al. PRB 2012
µup − µdn = qI RB
5
x
y
“Spin voltage”
Jonker et al. Nature Nano (2014)
Supriyo Datta
High S-O versus Magnetic
µup − µdn = qI RB
4 “Spin voltage”
Topo logicalInsulators : N = 0
p = M − NM + N
Channel
High S-O
Channel
Magnetic
M M
N N
Supriyo Datta
Pure Spin Conduction
3 “Spin voltage”
I I Is
Is
“ Conductance is Transmission “
Spin Conductance is NOT Necessarily Transmission
But
FMI X
Supriyo Datta
50
Spin Transport
25 25
0 100 100
Channel
θ
100
Channel I
= +
180 360 0
I
→ θspinor
+ =
vector
2
Σ1
Σ3
Σ4
Σ2
HΣ0 → Spin scattering
NEGF
Camsari et al. Sci. Rep. (2015)
Spin Circuits
Supriyo Datta
Spins & Magnets “Brain-inspired“ Magnetic Networks?
50 25 25 100
Channel I
= +
Solid-state “Stern-Gerlach”
1
Camsari et al. Sci. Rep. (2015)
Spin Circuits
Supriyo Datta Lessons from Nanoelectronics
nanohub.org/groups/courses/fon1 ,2
From Feynman Lectures, 2-1 “ .. people.. say there is nothing which
is not contained in the equations .. if I understand them mathematically,
I will understand the physics ..
Only it doesn’t work that way.
A physical understanding is completely unmathematical, imprecise and inexact .. but absolutely necessary for a physicist. ’’
0
I ~ G(E) f1(E)− f2 (E)( )
Elastic Resistor: Good approx to nanodevice
§ Correct driving term
~ dfdx
~ dµdx
https://nanohub.org/groups/courses/fon1, 2
J = σ F ~ − dφ / dxUsual physical picture based on
Alternative physical picture