orion helium ion microscope

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Carl Zeiss SMT AG Orion Helium Ion Microscope Carl Zeiss SMT, ALIS Business Unit December 3, 2007

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Page 1: Orion Helium Ion Microscope

Carl Zeiss SMT AG

Orion Helium IonMicroscope

Carl Zeiss SMT, ALIS Business Unit

December 3, 2007

Page 2: Orion Helium Ion Microscope

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Orion Helium Ion Microscope

Ions: He+Current: 0.1 to 20 pAEnergy: 5 to 45 keVDetectors: ET & MCPStage:

5 Axis, 50x50x15 mm X,Y & Z45° Tilt, 360° rotation

Page 3: Orion Helium Ion Microscope

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Helium Ion Source AdvantagesHelium Ion Source Advantages

••High Brightness:High Brightness:> 3.4x10> 3.4x1099 A/(cm2A/(cm2 srsr))

••Small Virtual Source SizeSmall Virtual Source Size(Sub(Sub--Angstrom)Angstrom)

••Low energy spreadLow energy spread(~1/2(~1/2 eVeV))

••Negligible diffraction effectsNegligible diffraction effectsdue to smalldue to small DeBroglieDeBrogliewavelength of He ionwavelength of He ion

••Ultimate Spot size:Ultimate Spot size:dd5050 = 1/4 nm= 1/4 nm

••Long Source Lifetime andLong Source Lifetime andStabilityStability

Page 4: Orion Helium Ion Microscope

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Interaction Volume (TRIM and Casino Software)

1 keV e-beam into Silicon

Image suffers from large interactionvolume at the surface. Many SE’sgenerated from recoils (green andblue).

Image suffers from large interactionvolume at the surface. Many SE’s arereally SE2.

Beam is well collimated beyond theSE escape depth. Recoil contributionis negligible.

Silicon

Page 5: Orion Helium Ion Microscope

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Secondary Electrons:• Provides true surface information• High yield, varies greatly with material

…ranges from ~2 to ~8• Yield varies with topography

…varies as sec (α)• Energy ~ 5 eV

Beam Sample Interaction

Page 6: Orion Helium Ion Microscope

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Scattered Helium:• Provides material information.• Scatter yield varies with Z2 of the target• Scatter energy varies with mass of the

target atoms (akin to RBS)

Beam Sample Interaction

Page 7: Orion Helium Ion Microscope

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Imaging Low Z Materials

• Carbon Nanotube sample

300nm FOV

• Reduced broadeningeffect due to greatersurface sensitivity

• Good surface information

• Smaller sample interactionvolume than electronbeam reducestransparency

Page 8: Orion Helium Ion Microscope

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Unique Topographic Sensitivity

• Chrome on Quartz Sample

• Intricate grain structure andedge detail

• Shows charge neutralizationon insulating sample usingelectron flood gun

Page 9: Orion Helium Ion Microscope

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High resolution imaging

• Au on C sample

• Edge rise measurementmethodology used todetermine probe size.

• Area selected for analysisoutlined in red

• Result: Probe size

•0.6 nm (±0.3 nm)

Page 10: Orion Helium Ion Microscope

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Reduced Charging Artifacts

• Benthic Foraminifera Sample,comprised mostly of CalciumCarbonate

• Backscattered Ion imageshows no signs of charging oninsulating materials.

• Electron flood gun controlscharging on insulatingmaterials when imaging in SEMode

Page 11: Orion Helium Ion Microscope

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Potential for Backscattered Helium Analysis

• Energy filtered backscattered ion analysis under development

• High lateral resolution elemental analysis, perhaps as good as 5nm.

• Excellent depth resolution. Very surface sensitive at lower energies.

• High sensitivity to low Z materials.

• Minimal sample preparation – no lamella formation needed.

• Insensitive to sample charging – electron floodgun.

• Minimal sample damage – helium ions are very light.

Page 12: Orion Helium Ion Microscope

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Carl Zeiss SMT AG

Orion Helium Ion Microscope

• World’s first and onlycommercially availableHe Ion Microscope

• Resolution of 0.6nm insecondary electronimaging mode (with planto reach 0.25nm)

• Unique sampleinteraction physics

• Superior chargecompensation

• Potential to analyzebackscattered ions forhigh lateral resolutionelemental analysis