p580-a46-53 adatlap v6.4 - richardson rfpd · v23990-p580-a46-pm preliminary datasheet tj=25°c,...

V23990-P580-A46-PMpreliminary datasheet

flowPIM 1 3rd gen 1200V / 35A

3~ rectifier, BRC, Inverter, NTC Very compact housing, easy to route IGBT4 / EmCon4 technology for low saturation losses and improved EMC behaviour High performance with AlN substrate

Motor Drives Power Generation

V23990-P580-A46-PM

Tj=25°C, unless otherwise specified

Parameter Symbol Value Unit

Peak repetitive reverse voltage VRRM 1600 V

Maximum junction temperature Tjmax 150 °C

Inverter Transistor

tSC Tj≤150°C 10 μsVCC VGE=15V 800 V

I2t

Forward current per diode

Surge forward current

Power dissipation per diode

A

W

DC current Th=80°C

Maximum junction temperature

Power dissipation per IGBT

VGE

Tjmax

Ptot

Short circuit ratings

Gate-emitter peak voltage

DC collector current

°C

V

A

V

Ptot

A

Types

I2t-value

Maximum Ratings

IFAV

A2s

IFSM

Condition

Tj=Tjmax

Features flowPIM1 housing

Target Applications Schematic

tp=10ms320

Input Rectifier Diode

50

VCE

ICpulse

IC

Collector-emitter break down voltage

Repetitive peak collector current

1200

±20

W

A

Tj=Tjmax

Tj=Tjmax

tp limited by Tjmax

Th=80°C 82

510Tj=45°C

175

Th=80°C 49

Th=80°C 152

105

copyright Vincotech 1 Revision: 1


Tj=25°C, unless otherwise specified

Parameter Symbol Value Unit

Maximum Ratings

Condition

Inverter Diode

Brc Transistor

tSC Tj≤150°C 10 μsVCC VGE=15V 800 V

Brc Diode

Thermal Properties

Insulation Properties

Vis t=2s DC voltage 4000 V

min 12.7 mm

min 12.7 mmClearance

Insulation voltage

Creepage distance

TopOperation temperature under switching condition -40…+(Tjmax - 25) °C

Storage temperature Tstg -40…+125 °C

Peak repetitive reverse voltage

°CMaximum junction temperature Tjmax 175

Tj=Tjmax

tp limited by Tjmax

AIF Th=80°C

Th=80°C

50

121Ptot

Tj=Tjmax

VRRM

DC forward current

Peak repetitive reverse voltage

IFRM

Tjmax

Repetitive peak forward current

Power dissipation per diode

ICpuls

Tj=TjmaxIC

VRRM

Ptot

VCE

Power dissipation per diode Ptot Tj=Tjmax

Tj=TjmaxDC forward current IF

Repetitive peak forward current IFRM tp limited by Tjmax

Tj=Tjmax

W

A

V

A

VGE

V

W

A

175Maximum junction temperature °C

DC collector current

Power dissipation per IGBT

Repetitive peak collector current

Gate-emitter peak voltage

Maximum junction temperature

Short circuit ratings

Tjmax

V

A

V

°C

W

A

Collector-emitter break down voltage

175

Tj=25°C 1200

40

133

75

Tj=25°C

70

tp limited by Tjmax

59Th=80°C

1200

1200

±20

Th=80°C 20

20

Th=80°C

Th=80°C



Parameter Symbol Unit

VGE [V] or VGS [V]

Vr [V] or VCE [V] or VDS [V]

IC [A] or IF [A] or ID [A]

Tj Min Typ Max

Tj=25°C 0.8 1.29 1.6Tj=125°C 1.24Tj=25°C 0.93Tj=125°C 0.82Tj=25°C 0.007Tj=125°C 0.009Tj=25°C 0.02Tj=125°C 2

Thermal resistance chip to heatsink per chip RthJH 0.85

Thermal resistance chip to case per chip RthJC N/A

Tj=25°C 5 5.8 6.5Tj=150°CTj=25°C 1.6 1.95 2.3Tj=150°C 2.39Tj=25°C 0.01Tj=150°CTj=25°C 200Tj=150°C

Tj=25°C 92Tj=150°C 91.6Tj=25°C 18Tj=150°C 23.4Tj=25°C 213Tj=150°C 274Tj=25°C 75.3Tj=150°C 105Tj=25°C 1.62Tj=150°C 2.49Tj=25°C 1.81Tj=150°C 2.82



Tj=25°C 1 1.83 2.2Tj=150°C 1.8Tj=25°C 68.9Tj=150°C 78.7Tj=25°C 150Tj=150°C 277Tj=25°C 3.93Tj=150°C 7.47

di(rec)max Tj=25°C 4100/dt Tj=150°C 2080

Tj=25°C 1.69Tj=150°C 3.31


Thermal resistance chip to case per chip RthJC N/AK/W

V

pF

mWs

Ω

K/W

ns

270

155

mA

ns

1950

Rgoff=16Ω

Thermal foil thickness=76um Kunze foil KU-ALF5


1500

25

0

35

600

35

0.0012

35600

Collector-emitter cut-off current incl. diode

Fall time

Turn-off delay time

Turn-on delay time

Rise time

Gate-emitter leakage current

Turn-on energy loss per pulse

Reverse recovered charge

Inverter Diode

±15

35

35

0

20

15

Rgoff=16Ω

0 1200

±15

A

μC

mWs

A/μs

115

Reverse current Ir

K/W

V

V

Ω

mA

50

50

50

Characteristic Values

Forward voltage

Threshold voltage (for power loss calc. only)

Slope resistance (for power loss calc. only)

VF

Vto

rt

Input Rectifier Diode

ValueConditions

Input capacitance

Output capacitance

Turn-off energy loss per pulse

Collector-emitter saturation voltage

Integrated gate resistor

Inverter Transistor

Gate emitter threshold voltage

Eon

Eoff

IRRM

Crss

QGate

Diode forward voltage

Gate charge

Reverse recovery time

Reverse recovered energy

Peak rate of fall of recovery current

Cies

Qrr

trr

VF

Peak reverse recovery current

Reverse transfer capacitance

VCE(sat)

ICES

Rgint

td(on)

Vcc=960V

f=1MHz

Erec

Coss

tf

tr

td(off)

VCE=VGE

IGES

VGE(th)

±15

Rgon=16Ω


V

nC

V

nA

Tj=25°C

-

Tj=25°C



Parameter Symbol Unit

VGE [V] or VGS [V]

Vr [V] or VCE [V] or VDS [V]

IC [A] or IF [A] or ID [A]

Tj Min Typ Max

Characteristic Values

ValueConditions

Tj=25°C 5 5.8 6.5Tj=150°CTj=25°C 1.6 1.86 2.2Tj=150°C 2.31Tj=25°C 0.005Tj=150°CTj=25°C 200Tj=150°C

Tj=25°C 127Tj=150°C 129Tj=25°C 36Tj=150°C 41.8Tj=25°C 232Tj=150°C 276Tj=25°C 73.7Tj=150°C 112Tj=25°C 1.81Tj=150°C 2.42Tj=25°C 1.37Tj=150°C 2.19



Tj=25°C 1.3 1.85 2.2Tj=150°C 1.76Tj=25°C 5Tj=150°CTj=25°C 10.2Tj=150°C 12.3Tj=25°C 396Tj=150°C 624Tj=25°C 1.55Tj=150°C 3.03

di(rec)max Tj=25°C 36/dt Tj=150°C 32

Tj=25°C 0.63Tj=150°C 1.30



Tj=25°C 20.9 22 23.1Tj=125°C 0.75

Rgon=32Ω

115

1430

-

85

200

Tj=25°C

Tj=25°C

Tj=25°C

1200

600

600

25

600 10

10

10

±15

±15

±15

20

Thermistor


Diode forward voltage

Reverse leakage current

Brc Diode

mA

nA

ns

mWs

Vcc=960V

0f=1MHz

±15

0

Ω

25

V

V15

0


IGES

Rgoff=32ΩRgon=32Ω

VCE=VGE

Reverse recovery energy

VF

Ir

trr

Qrr

Erec

Reverse recovery time

IRRM

I

Rated resistance R

B-value B(25/50) Tol. ±3%

Operating current

K

Power dissipation P mW200

Brc Transistor

K/W

nC

Coss

Eon

Output capacitance

Crss

Cies

Integrated gate resistor

Peak rate of fall of recovery current

Peak reverse recovery current

Reverse recovered charge

Reverse transfer capacitance

Eoff

Turn-on energy loss per pulse

Turn-on delay time

tfFall time

td(on)

tr

Rgint

Turn-off energy loss per pulse

QGateGate charge

Input capacitance

Rise time

Turn-off delay time td(off)

Gate-emitter leakage current

ICES

VGE(th)

VCE(sat)Collector-emitter saturation voltage

Collector-emitter cut-off incl. diode

Gate emitter threshold voltage 0.00085

25

25

Tj=25°C

Tj=25°C

3950

0.3

K/W

mA

kΩ

mWs

μC

V

pF

μA

ns

A/μs

A



Figure 1 Output inverter IGBT Figure 2 Output inverter IGBTTypical output characteristics

IC = f(VCE) IC = f(VCE)

At Attp = 250 μs tp = 250 μsTj = 25 °C Tj = 150 °CVGE from 7 V to 17 V in steps of 1 V VGE from 7 V to 17 V in steps of 1 V

Figure 3 Output inverter IGBT Figure 4 Output inverter FREDTypical transfer characteristics Typical diode forward current asIC = f(VGE) a function of forward voltage

IF = f(VF)

At Attp = 250 μs tp = 250 μsVCE = 10 V

Output Inverter

Typical output characteristics

0

20

40

60

80

100

0 1 2 3 4 5V CE (V)

I C (A

)

0

10

20

30

40

0 3 6 9 12V GE (V)

I C (A

)

Tj = 25°CTj = Tjmax-25°C

0

20

40

60

80

100

0 1 2 3 4V F (V)

I F (A

) Tj = 25°C

Tj = Tjmax-25°C

0

20

40

60

80

100

0 1 2 3 4 5V CE (V)I C

(A)



Figure 5 Output inverter IGBT Figure 6 Output inverter IGBTTypical switching energy losses Typical switching energy lossesas a function of collector current as a function of gate resistorE = f(IC) E = f(RG)

With an inductive load at With an inductive load atTj = 25/150 °C Tj = 25/150 °CVCE = 600 V VCE = 600 VVGE = ±15 V VGE = ±15 VRgon = 16 Ω IC = 35 ARgoff = 16 Ω

Figure 7 Output inverter IGBT Figure 8 Output inverter IGBTTypical reverse recovery energy loss Typical reverse recovery energy lossas a function of collector current as a function of gate resistorErec = f(Ic) Erec = f(RG)

With an inductive load at With an inductive load atTj = 25/150 °C Tj = 25/150 °CVCE = 600 V VCE = 600 VVGE = ±15 V VGE = ±15 VRgon = 16 Ω IC = 35 A

Output Inverter

EonTj = Tjmax - 25°C

Eoff

Eon

Tj = 25°C

Eoff

0

1

2

3

4

5

6

7

8

0 10 20 30 40 50 60 70I C (A)

E (m

Ws)

Eoff

Tj = Tjmax - 25°C

Eon

Tj = 25°C

Eon

Eoff

0

1

2

3

4

5

6

7

8

0 10 20 30 40 50 60 70R G ( Ω )

E (m

Ws)

Tj = Tjmax -25°C

Erec

Tj = 25°C Erec

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

0 10 20 30 40 50 60 70I C (A)

E (m

Ws)

Tj = Tjmax -25°CErec

Tj = 25°C Erec

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

0 10 20 30 40 50 60 70R G ( Ω )

E (m

Ws)



Figure 9 Output inverter IGBT Figure 10 Output inverter IGBTTypical switching times as a Typical switching times as a function of collector current function of gate resistort = f(IC) t = f(RG)

With an inductive load at With an inductive load atTj = 150 °C Tj = 150 °CVCE = 600 V VCE = 600 VVGE = ±15 V VGE = ±15 VRgon = 16 Ω IC = 35 ARgoff = 16 Ω

Figure 11 Output inverter FRED Figure 12 Output inverter FREDTypical reverse recovery time as a Typical reverse recovery time as afunction of collector current function of IGBT turn on gate resistortrr = f(Ic) trr = f(Rgon)

At AtTj = 25/150 °C Tj = 25/150 °CVCE = 600 V VR = 600 VVGE = ±15 V IF = 35 ARgon = 16 Ω VGE = ±15 V

Output Inverter

tdoff

tf

tdon

tr

0.001

0.01

0.1

1

0 10 20 30 40 50 60 70I C (A)

t (μs

)

trr

Tj = Tjmax -25°C

trrTj = 25°C

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0 10 20 30 40 50 60 70R g on ( Ω )

t rr(

μs)

tdoff

tf

tdon

tr

0.001

0.01

0.1

1

0 10 20 30 40 50 60 70R G ( Ω )

t (μs

)

Tj = Tjmax -25°C

trr

trr

Tj = 25°C

0

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

0 10 20 30 40 50 60 70I C (A)

t rr(

μs)



Figure 13 Output inverter FRED Figure 14 Output inverter FREDTypical reverse recovery charge as a Typical reverse recovery charge as afunction of collector current function of IGBT turn on gate resistorQrr = f(IC) Qrr = f(Rgon)

AtAt AtTj = 25/150 °C Tj = 25/150 °CVCE = 600 V VR = 600 VVGE = ±15 V IF = 35 ARgon = 16 Ω VGE = ±15 V

Figure 15 Output inverter FRED Figure 16 Output inverter FREDTypical reverse recovery current as a Typical reverse recovery current as afunction of collector current function of IGBT turn on gate resistorIRRM = f(IC) IRRM = f(Rgon)


Output Inverter

Tj = Tjmax - 25°C

IRRM

Tj = 25°C

IRRM

0

20

40

60

80

100

120

140

0 10 20 30 40 50 60 70R gon ( Ω )

I rrM

(A)

Tj = Tjmax -25°CQrr

Tj = 25°CQrr

0

2

4

6

8

10

0 10 20 30 40 50 60 70R g on ( Ω)

Qrr

(μC

)

Tj = Tjmax -25°C

IRRM

Tj = 25°C

IRRM

0

20

40

60

80

100

120

0 10 20 30 40 50 60 70I C (A)

I rrM

(A)

Tj = Tjmax -25°C

Qrr

Tj = 25°C Qrr

0

2

4

6

8

10

0 10 20 30 40 50 60 70I C (A)

Qrr

(μC

)



Figure 17 Output inverter FRED Figure 18 Output inverter FREDTypical rate of fall of forward Typical rate of fall of forwardand reverse recovery current as a and reverse recovery current as afunction of collector current function of IGBT turn on gate resistordI0/dt,dIrec/dt = f(Ic) dI0/dt,dIrec/dt = f(Rgon)


Figure 19 Output inverter IGBT Figure 20 Output inverter FREDIGBT transient thermal impedance FRED transient thermal impedanceas a function of pulse width as a function of pulse widthZthJH = f(tp) ZthJH = f(tp)

At AtD = tp / T D = tp / TRthJH = 0.62 K/W RthJH = 0.78 K/W

IGBT thermal model values FRED thermal model values

R (C/W) Tau (s) R (C/W) Tau (s) 0.04 3.6E+00 0.02 9.7E+00 0.09 5.8E-01 0.09 9.8E-01 0.31 8.1E-02 0.24 1.0E-01 0.09 1.7E-02 0.22 2.5E-02 0.06 1.6E-03 0.11 2.9E-03 0.03 2.8E-04 0.09 4.1E-04

Output Inverter

t p (s)

Z thJ

H (

K/W

)

100

10-1

10-2

10-4 10-3 10-2 10-1 100 101110-5

D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000

t p (s)

Z thJ

H (

K/W

)

100

10-1

10-2

10-4 10-3 10-2 10-1 100 101110-5

D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000

Tj = Tjmax - 25°C

dI0/dt

dIrec/dt

Tj = 25°C

0

1000

2000

3000

4000

5000

6000

7000

8000

9000

10000

0 10 20 30 40 50 60 70R gon ( Ω)

dire

c / d

t (A

/ μs)

Tj = Tjmax - 25°C

dI0/dt Tj = 25°C

0

500

1000

1500

2000

2500

3000

3500

4000

4500

5000

0 10 20 30 40 50 60 70I C (A)

dire

c / d

t (A

/ μs)

dIrec/dt



Figure 21 Output inverter IGBT Figure 22 Output inverter IGBTPower dissipation as a Collector current as a function of heatsink temperature function of heatsink temperaturePtot = f(Th) IC = f(Th)

At AtTj = 175 °C single heating Tj = 175 °C

overall heating VGE = 15 V

Figure 23 Output inverter FRED Figure 24 Output inverter FREDPower dissipation as a Forward current as a function of heatsink temperature function of heatsink temperaturePtot = f(Th) IF = f(Th)

At AtTj = 175 °C single heating Tj = 175 °C

overall heating

Output Inverter

0

50

100

150

200

250

300

0 50 100 150 200T h (o C)

P tot

(W)

0

10

20

30

40

50

60

0 50 100 150 200T h (o C)

I C (A

)

0

50

100

150

200

250

0 50 100 150 200T h (o C)

P tot

(W)

0

10

20

30

40

50

60

0 50 100 150 200T h (o C)

I F (A

)



Figure 25 Output inverter IGBT Figure 26 Output inverter IGBTSafe operating area as a function Gate voltage vs Gate chargeof collector-emitter voltageIC = f(VCE) VGE = f(Qg)

At AtD = single pulse IC = 35 ATh = 80 ºCVGE = ±15 VTj = Tjmax ºC

Output Inverter

0.1

1.0

10.0

100.0

1000.0

1 10 100 1000 10000V CE (V)

I C (A

)

100uS

1mS10mS

100mSDC

0

2.5

5

7.5

10

12.5

15

17.5

0 25 50 75 100 125 150 175 200Q g (nC)

V GE (V

)

240V

960V



Figure 1 Brake IGBT Figure 2 Brake IGBTTypical output characteristics Typical output characteristicsIC = f(VCE) IC = f(VCE)

At Attp = 250 μs tp = 250 μsTj = 25 °C Tj = 150 °CVGE from 7 V to 17 V in steps of 1 V VGE from 7 V to 17 V in steps of 1 V

Figure 3 Brake IGBT Figure 4 Brake FREDTypical transfer characteristics Typical diode forward current asIC = f(VGE) a function of forward voltage

IF = f(VF)

At Attp = 250 μs tp = 250 μsVCE = 10 V

Brake

0

20

40

60

80

0 1 2 3 4 5V CE (V)

I C (A

)

0

5

10

15

20

25

30

0 2 4 6 8 10 12 14V GE (V)

I C (A

)

Tj = 25°CTj = Tjmax-25°C

0

5

10

15

20

25

30

0 0.5 1 1.5 2 2.5 3 3.5V F (V)

I F (A

)

Tj = 25°C

Tj = Tjmax-25°C

0

20

40

60

80

0 1 2 3 4 5V CE (V)I C

(A)



Figure 5 Brake IGBT Figure 6 Brake IGBTTypical switching energy losses Typical switching energy lossesas a function of collector current as a function of gate resistorE = f(IC) E = f(RG)


Figure 7 Brake IGBT Figure 8 Brake IGBTTypical reverse recovery energy loss Typical reverse recovery energy lossas a function of collector current as a function of gate resistorErec = f(Ic) Erec = f(RG)

With an inductive load at With an inductive load atTj = 25/150 °C Tj = 25/150 °CVCE = 600 V VCE = 600 VVGE = ±15 V VGE = ±15 VRgon = 32 Ω IC = 25 A

Brake

Tj = Tjmax - 25°CErec

Tj = 25°C Erec

0

0.4

0.8

1.2

1.6

2

0 5 10 15 20 25 30 35 40 45 50I C (A)

E (m

Ws)

Tj = Tjmax -25°C

Erec

Tj = 25°C Erec

0

0.4

0.8

1.2

1.6

2

0 30 60 90 120 150R G ( Ω )

E (m

Ws)

Tj = Tjmax -25°C

Eoff

Eon

Tj = 25°C

Eon

Eoff

0

1

2

3

4

5

6

7

0 5 10 15 20 25 30 35 40 45 50I C (A)

E (m

Ws)

Tj = Tjmax -25°C

Eoff

Eon

Eon

Tj = 25°C

Eoff

0

1

2

3

4

5

6

7

0 30 60 90 120 150R G ( Ω )

E (m

Ws)



Figure 9 Brake IGBT Figure 10 Brake IGBTTypical switching times as a Typical switching times as a function of collector current function of gate resistort = f(IC) t = f(RG)


Figure 11 Brake IGBT Figure 12 Brake FREDIGBT transient thermal impedance FRED transient thermal impedanceas a function of pulse width as a function of pulse widthZthJH = f(tp) ZthJH = f(tp)

At AtD = tp / T D = tp / TRthJH = 0.71 K/W RthJH = 1.62 K/W

Brake

tdoff

tf

tdon

tr

0.001

0.01

0.1

1

0 5 10 15 20 25 30 35 40 45 50I C (A)

t (μs

)

tdoff

tf

tdon

tr

0.001

0.01

0.1

1

0 30 60 90 120 150R G ( Ω )t (

μs)

t p (s)

Z thJ

H (

K/W

)

101

100

10-1

10-2

10-4 10-3 10-2 10-1 100 101 110-5

D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000

t p (s)

Z thJ

H (

K/W

)

101

100

10-1

10-2

10-4 10-3 10-2 10-1 100 101 110-5

D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000



Figure 13 Brake IGBT Figure 14 Brake IGBTPower dissipation as a Collector current as a function of heatsink temperature function of heatsink temperaturePtot = f(Th) IC = f(Th)

At AtTj = 175 ºC Tj = 175 ºC

VGE = 15 V

Figure 15 Brake FRED Figure 16 Brake FREDPower dissipation as a Forward current as a function of heatsink temperature function of heatsink temperaturePtot = f(Th) IF = f(Th)


Brake

0

50

100

150

200

250

300

0 50 100 150 200T h ( o C)

P tot

(W)

0

10

20

30

40

50

0 50 100 150 200T h ( o C)

I C (A

)

0

20

40

60

80

100

120

0 50 100 150 200Th (o C)

P tot

(W)

0

5

10

15

20

25

0 50 100 150 200Th (o C)

I F (A

)



Figure 1 Rectifier diode Figure 2 Rectifier diodeTypical diode forward current as Diode transient thermal impedancea function of forward voltage as a function of pulse widthIF= f(VF) ZthJH = f(tp)

At Attp = 250 μs D = tp / T

RthJH = 0.851 K/W

Figure 3 Rectifier diode Figure 4 Rectifier diodePower dissipation as a Forward current as a function of heatsink temperature function of heatsink temperaturePtot = f(Th) IF = f(Th)


Input Rectifier Bridge

0

30

60

90

120

150

0 0.5 1 1.5 2 2.5VF (V)

IF (A

)

Tj = 25°C

Tj = Tjmax-25°C

t p (s)

Z thJ

C (

K/W

)

101

100

10-1

10-2

10-4 10-3 10-2 10-1 100 101110-5

D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000

0

40

80

120

160

200

0 50 100 150 200T h (o C)

P tot

(W)

0

10

20

30

40

50

60

70

0 50 100 150 200T h (o C)

I F (A

)



Figure 1 ThermistorTypical NTC characteristicas a function of temperatureRT = f(T)

Thermistor

NTC-typical temperature characteristic

0

5000

10000

15000

20000

25000

25 50 75 100 125T (°C)

R/Ω



Tj 150 °CRgon 16 ΩRgoff 16 Ω

Figure 1 Output inverter IGBT Figure 2 Output inverter IGBTTurn-off Switching Waveforms & definition of tdoff, tEoff Turn-on Switching Waveforms & definition of tdon, tEon(tEoff = integrating time for Eoff) (tEon = integrating time for Eon)

VGE (0%) = -15 V VGE (0%) = -15 VVGE (100%) = 15 V VGE (100%) = 15 VVC (100%) = 600 V VC (100%) = 600 VIC (100%) = 35 A IC (100%) = 35 Atdoff = 0.27 μs tdon = 0.09 μstEoff = 0.54 μs tEon = 0.31 μs

Figure 3 Output inverter IGBT Figure 4 Output inverter IGBTTurn-off Switching Waveforms & definition of tf Turn-on Switching Waveforms & definition of tr

VC (100%) = 600 V VC (100%) = 600 VIC (100%) = 35 A IC (100%) = 35 Atf = 0.11 μs tr = 0.02 μs

Switching Definitions Output InverterGeneral conditions

===

Ic 1%

Uce 90%Uge 90%

-20

0

20

40

60

80

100

120

140

-0.2 -0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7time (us)

%

tdoff

tEoff

Uce

Ic

Uge

Ic10%

Uge10%

tdon

Uce3%

-50

0

50

100

150

200

250

300

350

2.8 2.9 3 3.1 3.2 3.3 3.4 3.5time(us)

%

Ic

Uce

tEon

Uge

fitted

Ic10%

Ic 90%

Ic 60%

Ic 40%

-20

0

20

40

60

80

100

120

140

0.2 0.25 0.3 0.35 0.4 0.45time (us)

%

Uce

Ic

tf Ic10%

Ic90%

-50

0

50

100

150

200

250

300

350

2.9 3 3.1 3.2 3.3 3.4 3.5time(us)

%

tr

Uce

Ic



Figure 5 Output inverter IGBT Figure 6 Output inverter IGBTTurn-off Switching Waveforms & definition of tEoff Turn-on Switching Waveforms & definition of tEon

Poff (100%) = 21.01 kW Pon (100%) = 21.01 kWEoff (100%) = 2.82 mJ Eon (100%) = 2.49 mJtEoff = 0.54 μs tEon = 0.31 μs

Figure 7 Output inverter FRED Figure 8 Output inverter IGBTGate voltage vs Gate charge (measured) Turn-off Switching Waveforms & definition of trr

VGEoff = -15 V Vd (100%) = 600 VVGEon = 15 V Id (100%) = 35 AVC (100%) = 600 V IRRM (100%) = -79 AIC (100%) = 35 A trr = 0.28 μsQg = 1239.53 nC

Switching Definitions Output Inverter

Ic 1%

Uge90%

-20

0

20

40

60

80

100

120

-0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7time (us)

%

Poff

Eoff

tEoff

Uce3%Uge10%

-50

0

50

100

150

200

250

2.9 3 3.1 3.2 3.3 3.4 3.5time(us)

%

Pon

Eon

tEon

-20

-15

-10

-5

0

5

10

15

20

-50 0 50 100 150 200 250 300Qg (nC)

Uge

(V) IRRM10%

IRRM90%

IRRM100%

trr

-280

-240

-200

-160

-120

-80

-40

0

40

80

120

3 3.1 3.2 3.3 3.4 3.5time(us)

%

Id

Ud

fitted



Figure 9 Output inverter FRED Figure 10 Output inverter FRED Turn-on Switching Waveforms & definition of tQrr Turn-on Switching Waveforms & definition of tErec

(tQrr = integrating time for Qrr) (tErec= integrating time for Erec)

Id (100%) = 35 A Prec (100%) = 21.01 kWQrr (100%) = 7.47 μC Erec (100%) = 3.31 mJtQrr = 1.00 μs tErec = 1.00 μs

Switching Definitions Output Inverter

tQrr

-250

-200

-150

-100

-50

0

50

100

150

2.8 3 3.2 3.4 3.6 3.8 4 4.2 4.4time(us)

%

IdQrr

-20

0

20

40

60

80

100

120

2.8 3 3.2 3.4 3.6 3.8 4 4.2 4.4time(us)

%

Prec

Erec

tErec




VGEon 15 VVGEoff -15 VRgon 16 ΩRgoff 16 Ω

Figure 1 IGBT Figure 2 FREDTypical average static loss as a function of output current Typical average static loss as a function of output currentPloss = f(Iout) Ploss = f(Iout)

At AtTj = 150 °C Tj = 150 °CMi*cosφ from -1 to 1 in steps of 0.2 Mi*cosφ from -1 to 1 in steps of 0.2

Figure 3 IGBT Figure 4 FREDTypical average switching loss Typical average switching loss as a function of output current Ploss = f(Iout) as a function of output current Ploss = f(Iout)

At AtTj = 150 °C Tj = 150 °CDC link = 600 V DC link = 600 Vfsw from 2 kHz to 16 kHz in steps of factor 2 fsw from 2 kHz to 16 kHz in steps of factor 2

Output Inverter Application

==

==

3phase SPWMGeneral conditions

Mi*cosfi = -1

Mi*cosfi = 1

0

10

20

30

40

50

60

70

80

90

100

0 10 20 30 40 50 60 70Iout (A)

Plos

s (W

)

Mi*cosf i= -1

Mi*cosfi = 10

10

20

30

40

50

60

70

0 10 20 30 40 50 60 70Iout (A)

Plos

s (W

)

fsw = 2kHz

fsw = 16kHz

0.0

10.0

20.0

30.0

40.0

50.0

60.0

70.0

0 10 20 30 40 50 60 70Iout (A)

Plos

s (W

)

fsw = 2kHz

fsw = 16kHz

0.0

5.0

10.0

15.0

20.0

25.0

30.0

35.0

40.0

0 10 20 30 40 50 60 70Iout (A)

Plos

s (W

)




Figure 5 Phase Figure 6 PhaseTypical available 50Hz output current Typical available 50Hz output current as a function Mi*cosφ Iout = f(Mi*cos φ) as a function of switching frequency Iout = f(fsw)

At AtTj = 150 °C Tj = 150 °CDC link = 600 V DC link = 600 Vfsw = 8 kHz Mi*cos φ = 0.8Th from 60 °C to 100 °C in steps of 5 °C Th from 60 °C to 100 °C in steps of 5 °C

Figure 7 Phase Figure 8 PhaseTypical available 50Hz output current as a function of Typical available 0Hz output current as a function Mi*cos φ and switching frequency Iout = f(fsw, Mi*cos φ) of switching frequency Ioutpeak = f(fsw)

At AtTj = 150 °C Tj = 150 °CDC link = 600 V DC link = 600 VTh = 90 °C Th from 60 °C to 100 °C in steps of 5 °C

Mi = 0


Th = 60°C

Th = 100°C

0

10

20

30

40

50

60

-1.0 -0.8 -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 0.8 1.0Mi*cos φ

Iout

(A)

Th = 60°C

Th = 100°C

0

10

20

30

40

50

60

1 10 100fsw (kHz)

Iout

(A)

1 2 4 8 16 32 64

-1.00

-0.80

-0.60

-0.40

-0.20

0.00

0.20

0.40

0.60

0.80

1.00

Iout (A)

45.0-50.040.0-45.035.0-40.030.0-35.025.0-30.020.0-25.015.0-20.0

Mi*

cosf

i

fsw

Th = 60°C

Th = 100°C

0

10

20

30

40

50

60

1 10 100fsw (kHz)

Iout

(Ape

ak)




Figure 9 Inverter Figure 10 InverterTypical available peak output power as a function of Typical efficiency as a function of output powerheatsink temperature Pout=f(Th) efficiency=f(Pout)

At AtTj = 150 °C Tj = 150 °CDC link = 600 V DC link = 600 VMi = 1 Mi = 1cos φ= 0.80 cos φ= 0.80fsw from 2 kHz to 16 kHz in steps of factor 2 fsw from 2 kHz to 16 kHz in steps of factor 2

Figure 11 InverterTypical available overload factor as a function of motor power and switching frequency Ppeak / Pnom=f(Pnom,fsw)

AtTj = 150 °CDC link = 600 VMi = 1cos φ= 0.8fsw from 1 kHz to 16kHz in steps of factor 2Th = 90 °CMotor eff = 0.85


2kHz

16kHz

0.0

5.0

10.0

15.0

20.0

25.0

60 65 70 75 80 85 90 95 100Th (

o C)

Pout

(kW

)

2kHz

16kHz

90.0

91.0

92.0

93.0

94.0

95.0

96.0

97.0

98.0

99.0

100.0

0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0Pout (kW)

effic

ienc

y (%

)

Switc

hing

freq

uenc

y (k

Hz) 100

150

200

250

300

350

400

Motor nominal power (HP/kW)

Ove

rloa

d (%

)

1 349 262 175 131

2 349 262 175 131

4 349 262 175 131

8 349 262 175 131

16 309 232 155 116

0,08 / 0,06 0,10 / 0,07 0,15 / 0,11 0,20 / 0,15



Package Outline and Pinout

Outline

Pinout



PRODUCT STATUS DEFINITIONS

Formative or In Design

First Production

Full Production

DISCLAIMER

LIFE SUPPORT POLICY

As used herein:

Preliminary

This datasheet contains preliminary data, and supplementary data may be published at a later date. Vincotech reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for technically trained staff.

Final

This datasheet contains final specifications. Vincotech reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for technically trained staff.

Target

Product StatusDatasheet Status Definition

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. The data contained is exclusively intended for technically trained staff.

The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others.

Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech.

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.


p580-a46-53 adatlap v6.4 - richardson rfpd · v23990-p580-a46-pm preliminary datasheet tj=25°c,...

Documents