packaging and characterization of silicon carbide thyristor
TRANSCRIPT
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8/9/2019 Packaging and Characterization of Silicon Carbide Thyristor
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Packaging andCharacterization of SiliconCarbide ThyristorPower Modules
Presented by,
Sanjay B.R
M.Tech
S!"C
Mangalore
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C#$T"$TS
%ntroduction
Module &abrication
Results and 'iscussions
Conclusions
References
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. %ntroduction
Advantagesof SiC de(ices o(er their Sicounter)arts
SiC is a wide bandga) se*iconductor *aterialwhich allows it to be used at te*)eratures abo(e+-C, the *ai*u* o)erating te*)erature of Side(ices
/igher ther*al conducti(ity/igher breakdown electric 0eld strength/igher Saturation drift (elocity
/igher Ther*al stability/igher che*ical inertness1olu*etric reduction of SiC2based P" syste*sSi*)ler ther*al *anage*ent syste*s
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3hy )ackaging4
&or Parallel con0guration of SiC de(ices Current yield of large2area SiC de(ices is low
)ri*arily due to *aterial defects.
To )ro*ote better ther*al cou)ling.
%t is i*)ortant that these )arallel2con0gured
SiC de(ices share current e5ually to reducethe )otential for failure.
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3ork6
7 SiC thyristor de(ices with di*ensions of8**98**98.:** were )ackaged into asingle *odule on a direct bond co))er ;'BC