part iii: theoretical surface science clean surfaces
TRANSCRIPT
Technische Universität München
Part III: Theoretical Surface Science
Clean Surfaces
Karsten Reuter
Lecture course: Solid State Theory
From ideal to real
Up to now: - infinite and perfectly homogeneous solid (ideal lattice) - harmonic lattice vibrations (phonons) - single electron picture (band theory) - electronic and phononic system completely separated (BO approx.)
- beyond the harmonic crystal approximation (phonon-phonon scattering, phonon lifetimes, thermal expansion…)
- beyond mean-field electron correlation („correlated materials“, Mott insulators, Hubbard models,…) - electron-phonon coupling (electron-phonon scattering, Peierls distortions, polarons, low-T supraconductivity/BCS theory, …) - beyond the ideal lattice (point defects, impurities, vacancies, localized states, F centers, …) - beyond the infinite crystal (surface/interface states, band bending, …)
Get real!
Surfaces everywhere…
Phase I
Phase II (T,p) solid – gas solid – liquid solid – solid (“interface”) …
„Skin of a solid“
− N.W. Ashcroft and N.D. Mermin, “Solid State Physics”, Saunders College
(Philadelphia, 1976) − A. Zangwill, “Physics at Surfaces”, Cambridge Univ. Press (Cambridge, 1988) − M. Henzler and W. Göpel, “Oberflächenphysik des Festkörpers”, Teubner (Stuttgart,
1994) − A. Gross, “Theoretical Surface Science – a Microscopic Perspective”, Springer (Berlin,
2002)
− R. Masel, ”Principles of Adsorption and Reaction on Solid Surfaces”, Wiley (New York,
1996) − D.P. Woodruff and T.A. Delchar, “Modern Techniques of Surface Science”,
Cambridge Univ. Press (Cambridge, 1994)
Further reading
Z = p
(2πmkT)½
(N/V) v
1015 sites/cm2, T=300 K, p = 1 atm: Z ~ 108 site-1 s-1 !!
Requires p ~ 10-12 atm to keep a “clean” surface clean for t ~ 1h
Surface Science:
- T→ 0K, UHV - no equilibrium with gas phase - deposition at fixed dosage (1 Langmuir = 10-6 Torr s ≈ 10-9 atm s)
Impingement and the Surface Science ansatz
Complexity vs. atomic-scale understanding
SEM image of polycrystalline Cu
STM image of GaSb screw dislocations (10 μm x 10 μm)
Simplification needed…
Which surfaces to study I?
Phase I
Phase II
Phase I / phase II alone (bulk):
GI = NI µI GII = NII µII Total system (with surface):
GI+II = GI + GII + ∆Gsurf
(T,p)
γA
γ = 1/A ( GI+II - Σi Ni µi ) Surface tension (free energy per area)
Surface thermodynamics
Which surfaces to study II?
γ(T,p) = 1/A ( GI+II - Σi Ni µi ) γ ≈ 1/A ( EI+II – N Ebulk ) atom
p,T → 0
Assume: Only M atoms in topmost layer affected by surface, and energy of every atom simply scales with coordination → Eatom= (Zbonds/Zbulk) E coh :
γ ~ (M/A) Ecoh (Zsurf – Zbulk)/Zbulk ~ 100 meV/Å2
~ 0.1 ~ 4 eV ~ ¼ atom/Å2 (TMs)
From surface tension to surface energy
Which surfaces to study III?
Crystals will seek to minimize the surface free energy
∫dA γ = min.
under the constraint of fixed volume:
Wulff construction
… but be aware of kinetics !!!
Equilibrium shape of crystals
Lead crystal at 473 K J.C. Heyraud and J.J. Metois, Surf. Sci. 128, 334 (1983)
Surface Science part II: “Ideal” surfaces
[001] n
α
steps
kinks
(335) (11 13 19)
vicinal surfaces
(100)
(111) (110)
low-index surfaces
Cutting close-packed materials (fcc/hcp/bcc)
Point: P = h a + k b + l c Direction: Q = OP = [ nh : nk : nl ] with n smallest integer to yield three integer indices
e.g. Q = [1:1:0.5] = [221]
h k
l
[square brackets] single direction (regular brackets) one plane <pointed brackets> set of parallel directions {curly brackets} set of equivalent planes
Miller indices
Describing points, directions and planes in crystals
Plane: R = ( n/h : n/k : n/l ) with n smallest common denominator (to yield integer indices)
Infinities are set to zero. Negative indices get a “-” on top: 1
e.g. R = ( n/1 : n/3 : n/2 ) = (623)
Cubic systems:
(100), (010) and (001) are orthogonal (and in case of monatomic basis: identical) [hkl] is orthogonal to (hkl) Hexagonal systems:
Four index Miller notation ( a1 a2 a3 c ) ( n/h : n/k : n/i : n/l ) Index i is redundant: n/h + n/k = -n/i hcp(0001) and fcc(111) differ only in registry of third-layer
Specialities for cubic and hexagonal lattices
fcc bcc
(100)
(110)
(111)
fcc(100)
con- ventional
bulk unit cell
primitive surface unit cell
Common low-index planes
Atoms at the surface experience a different bonding environment than in the bulk. Adapting to this leads to:
Relaxation: change in atomic positions, but leaving surface unit cell unchanged
Reconstruction: changes of the unit cell/surface periodicity Open surfaces have much higher tendency to reconstruct than close-packed ones
From bulk-truncated to real surface geometries
Wood notation: Primitive lattice a1, a2 , reconstructed lattice b1, b2
If (after rotation by φ) b1 = m a1 b2 = n a2
then M{hkl}-(m x n)Rφo
e.g. (2x1), (√2 x √2)R45o = c(2x2)
Examples of relaxation and reconstruction: Metals
Layer relaxation Smoluchowski smoothing
+ + + - - - -
fcc(110)-(1x2) missing row reconstruction Au(111)-(22x√3) herringbone structure
280 Å
Dimerization at (001) surface of group IV elements
20 Å
Si(111)-(7x7) DAS-model
“Dangling bond minimization”
Examples of relaxation and reconstruction: Semiconductors
Electronic structure of surfaces: Jellium model
Ion cores approximated by uniform, positive background
charge (spatial average), confined to semi-infinite space.
Self-consistent electronic structure calculation
rs = 2 rs = 5
π/kF
N.D. Lang and W. Kohn, Phys. Rev. B 1, 4555 (1970)
Failures: - exponential instead of power law image potential (LDA-problem) - breaks down for TMs (localized d-electrons)
Achievements: - electron spill out (dipole layer, contributes to work function) - Friedel oscillations - oscillatory multilayer relaxation - qualitative description of simple metals (Na, Rb): work function, surface energy…
Projected surface band structure I
- For more detailed insights into the electronic structure, need to explicitly consider ionic lattice - Electronic structure calculation yields bulk electronic band structure - Even if there was no effect of the surface on the actual electronic structure, would still need to describe it differently: only 2D periodicity left, Brillouin zone collapses to 2D sheet!
M K
Γ
(111) surface Brillouin zone
Projected surface band structure II
k┴
k║
E
- Bulk bands project onto continuous regions in projected surface band structure - However, there are additional states that do not derive from this: Surface states (simply new solutions of the electronic problem due to finite crystal)
Projected surface band
structure M M Γ
Cu(111)
Shockley state
Tamm state
Ene
rgy
(eV
)
Tamm surface state
Complex band structure
gap
π/a k⊥
iκ
ε(k⊥)
matching condition potential
exp[ i(k⊥+ iκ) z] ~exp[λz]
Shockley surface state
Classification of surface states
Effects of surface states in semiconductors
Additional surface states in the band gap can be partially filled and then lead to charge imbalances that have electrostatic effects that extend deeply into semiconductors/insulators: - space charge region /band bending - metal-induced gap states (Schottky
barrier) - …