photosensor with front-end ic - hamamatsu
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S13645-01CR
Compact 16-element APD array suitable for various light level detection (serial output)
Photosensor with front-end IC
www.hamamatsu.com 1
The S13645-01CR is a compact optical device that integrates 16-element Si APD array and preamp. It has a built-in DC feedback circuit for reducing the eff ects of background light. It also provides excellent noise and frequency characteristics.In the S13645-01CR, output can be obtained from any one channel specifi ed in the selection logic.
StructureParameter Symbol Specification Unit
Detector - Si APD array -Photosensitive area (per element) A 1.0 × 0.4 mmElement pitch - 0.5 mmNumber of elements - 16 -Package - Plastic -
Absolute maximum ratingsParameter Symbol Condition Value Unit
Supply voltage (for preamp) Vcc max 4.5 VReverse voltage (for APD) V_APD 0 to VBR VReverse current (DC) IR max 0.2 mADCFB terminal voltage - Vcc + 0.7 VGain terminal voltage - Vcc + 0.7 VChannel selection terminal voltage - Vcc + 0.7 VOperating temperature Topr No dew condensation*1 -40 to +105 °CStorage temperature Tstg No dew condensation*1 -40 to +125 °CSoldering temperature*2 Tsol 260 (twice) °C*1: When there is a temperature diff erence between a product and the surrounding area in high humidity environment, dew condensation
may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability.*2: Refl ow soldering, IPC/JEDEC J-STD-020 MSL 3, see P.8Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Features
High-speed response: 180 MHz Two-level gain switch function(low gain: single output, high gain: diff erential output) Reduced background light eff ects Small waveform distortion when excessive light is incident
Applications
Distance measurement
Photosensor with front-end IC S13645-01CR
2
Electrical and optical characteristics (Ta=25 °C)Parameter Symbol Condition Min. Typ. Max. Unit
Spectral response range λ 400 to 1150 nmPeak sensitivity wavelength λp M=100 - 840 - nm
Photosensitivity S
λ=905 nm, M=50, low gain 31.5 45 58.5
kV/Wλ=905 nm, M=50, high gain 630 900 1170
Breakdown voltage VBR ID=100 μA 120 160 200 VTemperature coefficient of breakdown voltage ΔTVBR - 1.1 - V/°C
Dark current ID M=50 - 0.4 4 nATemperature coefficient of dark current ΔTID M=50 - 1.1 - times/°CTerminal capacitance Ct M=50, f=1 MHz - 1.6 - pFExcess noise figure x M=50, λ=905 nm - 0.3 - -Gain M λ=905 nm 40 50 60 -
Current consumption Icc Low gain 45 65 85 mAHigh gain 45 65 85
Low cutoff frequency fcl Low gain - 0.01 0.1 MHzHigh gain - 0.5 5
High cutoff frequency fch Low gain 120 180 240 MHzHigh gain 100 160 220
Input conversion noise power enf=10 MHz, M=50 - 160 220 fW/Hz1/2f=100 MHz, M=50 - 240 330
Output voltage level - Low gain 0.65 1.15 1.65 VHigh gain 0.5 1 1.5Output offset voltage Voffset High gain - - ±100 mV
Maximum output voltage amplitude Vp-p max Low gain 0.3 -0.6 - VHigh gain 0.4 ±0.8 -Supply voltage Vcc1, Vcc2 3.135 3.3 3.465 VCrosstalk - - -25 -20 dB
Light source
Target object
Measurement distance
Photosensor with front-end IC
Td
Light pulse
Sensor output
KPICC0306EA
Distance measuring methodDistance L is calculated from the time difference Td between the light source's light emission timing and sensor output and the speed of light c.
L = (1/2) × c × Td
Photosensor with front-end IC S13645-01CR
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Spectral response
KPICB0199ED
Wavelength (nm)
Rela
tive
sens
itivi
ty (%
)
(Typ. Ta=25 °C, M=50 at 905 nm)
400 6000
100
800 12001000
20
40
60
80
Dark current vs. reverse voltage
KPICB0200EA
(Typ. Ta=25 °C)
Reverse voltage (V)
Dark
cur
rent
0 20 40 60 80 100 120 140 160 180 2001 pA
10 pA
100 pA
10 nA
1 nA
100 nA
1 μA
100 μA
10 μA
Terminal capacitance vs. reverse voltage
KPICB0201EA
(Typ. Ta=25 °C)
Reverse voltage (V)
Term
inal
cap
acita
nce
0 20 40 60 80 100 120 140 160 180 200100 fF
1 pF
10 pF
100 pF
APD gain vs. reverse voltage
KPICB0202EC
(Typ. Ta=25 °C, λ=905 nm)
Reverse voltage (V)
Gain
0 20 40 60 80 100 120 140 160 180 2000.1
1
10
1000
100
Photosensor with front-end IC S13645-01CR
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Gain vs. reverse voltage
KPICB0242EA
(Typ. λ=905 nm)
Reverse voltage (V)
Gain
70 80 100 120 140 160 180 200 2201
10
100
1000
-10 °C
0 °C
20 °C
40 °C60 °C
80 °C
Gain vs. temperature (typical example)
KPICB0230EB
Temperature (°C)
Gain
(rel
ativ
e va
lue)
-50 500 100
High gainLow gain
Frequency characteristics (typical example)
KPICB0203ED
Frequency (MHz)
Gain
[rel
ativ
e va
lue]
(dB)
(Ta=25 °C, λ=905 nm)
0.1 10 1001 1000-25
-15
-20
-10
-5
5
0
High
Low
Current consumption vs. temperature (typical example)
KPICB0228EB
Temperature (°C)Cu
rren
t con
sum
ptio
n (m
A)-50 500 100
High gainLow gain
Photosensor with front-end IC S13645-01CR
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Truth table
D3 D2 D1 D0 Output0 0 0 0 ch10 0 0 1 ch20 0 1 0 ch30 0 1 1 ch40 1 0 0 ch50 1 0 1 ch60 1 1 0 ch70 1 1 1 ch81 0 0 0 ch91 0 0 1 ch101 0 1 0 ch111 0 1 1 ch121 1 0 0 ch131 1 0 1 ch141 1 1 0 ch151 1 1 1 ch16
Channel
Setting Gain0 Low gain (× 1)1 High gain (× 20)
Gain
Setting Background light elimination function0 ON1 OFF
Note: 0=Vcc × 0.2 V or less, 1=Vcc × 0.8 V or overThe pull-down resistor of the digital input terminal is 10 kΩ.
DC feedback circuit
Block diagram
KPICC0287EF
TIA
DCFB
TIA
DCFB
GND Vcc1 GND Vcc2
VGA
D0DCFB D1 D2 D3
SW1SW2
SW3
out1
out2
Gain
Select logic
Buffer
Buffer
Dummyamp
APD: ch1
APD: ch16
Anode
Photosensor with front-end IC S13645-01CR
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Output waveform examples (Ta=25 °C, M=50, linear region, pulse width=5 ns)
Low gain High gain
KPICB0315EA
Time (ns)
Outp
ut (V
)
(Incident light level: 10 μW)
0 10 20 30 40 50-0.1
0.2
0.1
0
KPICB0316EA
Time (ns)
Outp
ut (V
)
(Incident light level: 70 nW)
0 10 20 30 40 50-0.1
0.1
0.05
0
-0.05
Out2
Out1
Photosensor with front-end IC S13645-01CR
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Tolerance unless otherwise noted: ±0.2Chip position accuracy with respect to the packagedimensions marked*: X, Y≤±0.2, �≤±2°
Photosensitive area 7.9
11.4*
8.0*
1.0
0.4
0.98
0.92.
0
10.8
10 × P0.9=9.0
7.4
0.63
52 ×
P1.27=
2.54 28 × �0.4
ch16ch1
Photosnsitive surfaceGlass
KPICA0101EF
Dimensional outline (unit: mm) Pin connectionsPin no. Function Pin no. Pin no.
1 NC 15 GND2 NC 16 DCFB_dis3 GND 17 NC4 Vcc1 18 Anode5 Vcc2 19 Anode6 out2 20 Anode7 out1 21 Anode8 GND 22 Anode9 Gain 23 Anode10 D3 24 Anode11 D2 25 Anode12 D1 26 Anode13 D0 27 Anode14 Vcc1 28 Anode
Leave terminals 1, 2, and 17 open. Do not connect them to Vcc1, Vcc2, or GND.
Enlarged view of photosensitive area (unit: mm)
KPICC0290EB
1.00
7.90
0.10
0.40
Recommended land pattern (unit: mm)
KPICC0289EB
6.90.9
8.7
9 9.3
10.2 12
0.3
0.3
0.635
Photosensor with front-end IC S13645-01CR
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When using the photosensor with front-end IC in a 50 Ω system, connect resistors with the same resistance (200 Ω in the above figure) to output loads Out1 and Out2. If resistors with the same resistance are not connected to the output loads, the waveform may be distorted or the output may oscillate.
Connection example (50 Ω system)
Anode(Pin No. 18 to 28)
GND(Pin No. 3, 8, 15)
Gain(Pin No. 9)
D[3:0](Pin No. 10 to 13)
DCFB_dis(Pin No. 16)
Vcc1(Pin No. 4, 14)
Vcc2(Pin No. 5)
out1(Pin No. 7)
out2(Pin No. 6)
200 Ω 50 Ω
200 Ω 50 Ω
Vcc
10 nFL
0.1 μF10 nFL
0.1 μF10 Ω
3.3 nF × 3/630 V
10 nF/630 V-HV
KPICC0291EF
The gain of the APD built into the photosensor with front-end IC varies depending on the temperature. The following two methods are available for handling this issue in using the sensor over a wide temperature range.
Temperature correction method, which controls the reverse voltage according to the temperature changeA thermistor or other temperature sensor is installed near the APD to measure the APD’s temperature. The reverse voltage after APD temperature correction is expressed by the following equation using temperature T of the APD.
VR (after temperature correction) = VR (at 25 °C) + (T - 25) × ∆TVBR
Temperature control method, which keeps the APD temperature constantA TE-cooler or an equivalent device is used to maintain a constant APD temperature.
Handling of temperature characteristics of APD gain
Photosensor with front-end IC S13645-01CR
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∙ This product supports lead-free soldering. After unpacking, store it in an environment at a temperature of 30 °C or less and a humidity of 60% or less, and perform soldering within 24 hours.∙ The eff ect that the product receives during refl ow soldering varies depending on the circuit board and refl ow oven that are used. Before actual refl ow soldering, check for any problems by testing out the refl ow soldering methods in advance.
Recommended soldering conditions
KPICC0346EA
Tem
pera
ture
(°C)
300
230
190
170
Preheat60 to 120 s
Soldering40 s max.
260 °C max.
Time
Related informationwww.hamamatsu.com/sp/ssd/doc_en.html
Precautions∙ Disclaimer∙ Metal, ceramic, plastic packages∙ Surface mount type products
Photosensor with front-end IC S13645-01CR
10Cat. No. KPIC1097E13 Dec. 2020 DN
www.hamamatsu.comHAMAMATSU PHOTONICS K.K., Solid State Division1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81)53-434-3311, Fax: (81)53-434-5184U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218, E-mail: [email protected]: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-265-8, E-mail: [email protected]: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10, E-mail: [email protected] Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, UK, Telephone: (44)1707-294888, Fax: (44)1707-325777, E-mail: [email protected] Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46)8-509 031 00, Fax: (46)8-509 031 01, E-mail: [email protected]: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39)02-93 58 17 33, Fax: (39)02-93 58 17 41, E-mail: [email protected]: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, 27 Dongsanhuan Beilu, Chaoyang District, 100020 Beijing, P.R.China, Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866, E-mail: [email protected]: Hamamatsu Photonics Taiwan Co., Ltd.: 8F-3, No. 158, Section2, Gongdao 5th Road, East District, Hsinchu, 300, Taiwan R.O.C. Telephone: (886)3-659-0080, Fax: (886)3-659-0081, E-mail: [email protected]
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications.The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
Information described in this material is current as of December 2020.
Equivalent circuit
KPICC0310EA
CN15: V_APD
CN6: Out1
CN5: Out2
CN12: Vcc2
CN7: GainCN1,2: GNDCN13: DCFB
200 Ω200 Ω
0.047 μF/630 V
1 kΩ
0.1 μF
10 μF
L
CN4: Vcc1
L
L∙∙∙BLM18PG221SN10.1 μF
10 μF
CN8 to 11 D0 D1 D2D3
Evaluation kit for photosensor with front-end IC C13666-03
Evaluation kit [95 × 72 (H × V) mm] for photosensor with front-end IC is available (with the S13645-01CR). Contact us for detailed information.