PJM3401PSASingle P−Channel Power MOSFET

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Features The PJM3401PSA uses advanced trench

technology and design to provide excellentRDS(ON) with low gate charge.

High density cell design for ultra low RDS(ON)

Fully characterized avalanche voltage and current

Excellent package for good heat dissipation

VDSS=-30V

ID=-4.1A

RDS(ON)＜6 5 mΩ@ VGS=10V

Applications

Power switching application

Hard switched and high frequency circuits

Uninterruptible power supply

SOT-23

Absolute Maximum Ratings (TA=25unless otherwise stated)Symbol Parameter Rating Units

VDSS Drain-to-Source Voltage -30 V

ID Continuous Drain Current -4.1 A

VGS Gate-to-Source Voltage ±12 V

PD Power Dissipation 1.2 W

TJ,Tstg Operating Junction and Storage Temperature Range 150，–55 to 150

Symbol Parameter Typ. Units

RθJA Junction-to-Ambient 104 /W

1. Gate 2.Source 3.Drain

G S

D

2

3

1

Mark: R1

PJM3401PSASingle P−Channel Power MOSFET

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Electrical Characteristics (TA=25 unless otherwise specified)

Symbol Parameter Test ConditionsRating

UnitsMin. Typ. Max.

Off CharacteristicsVDSS Drain to Source Breakdown Voltage VGS=0V, ID=-250µA -30 -- -- V

IDSS Drain to Source Leakage Current VDS=-24,VGS=0V,TA=25 -- -- -1.0 µA

IGSS( F) Gate to Source Forward Leakage VGS =+12V -- -- 0.1 µA

IGSS( R) Gate to Source Reverse Leakage VGS =-12V -- -- -0.1 µA

On Characteristics

RDS(ON) Drain-to-Source On-Resistance Note1VGS=-10V,ID=-4.1A -- -- 65 mΩ

VGS(TH) Gate Threshold Voltage VDS=VGS, ID=250µA -0.7 -- -1.3 V

Dynamic Characteristicsgfs Forward Transconductance Note1 VDS=-5V, ID=-5A 7 -- -- S

Ciss Input CapacitanceVGS =0V,VDS=-15V

f=1.0MHz

-- 954 --pFCoss Output Capacitance -- 115 --

Crss Reverse Transfer Capacitance -- 77 --

Resistive Switching Characteristicstd(ON) Turn-on Delay Time VDD = -15V

RG = -3.6Ω

VGS =-10V,

RG = 6.0Ω

-- -- 6.3

nstr Rise Time -- -- 3.2

td(OFF) Turn-Off Delay Time -- -- 38.2

tf Fall Time -- -- 12

Source-Drain Diode CharacteristicsVSD Diode Forward Voltage Note1 IS=-1A,VGS=0V -- -- -1 V

VGS=-4.5V,ID=-2A -- -- 85 mΩ

Note：

1 ： Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%.Pu

PJM3401PSASingle P−Channel Power MOSFET

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Typical Curves

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-0 -5-0

-5

-10

-15

-20

-25

-0 -100

30

60

90

120

150

180

-0 -2 -6 -80

30

60

90

120

150

180

-0-0.5 -2.5-1.0 -1.5 -2.0 -3.0

-1

-2

-3

-4

-5

-1E-5-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2

-1E-4

-1E-3

-0.01

-0.1

-1

-10

Ta=25Pulsed

Ta=25Pulsed

VGS=-10VVGS=-4.5V

VGS=-3.0V

VGS=-2.5V

VGS=-2.0V

Output Ch aracteristics

Drain

Current

I D

(A

)

-4-1 -2 -3 Drain to Source Voltage VDS (V)

Ta=25Pulsed

ID=-2A

—— VGSRDS(ON)

On-

Resistance

R

DS

(ON

) (m

Ω)

2- -4 6- 8-Gate to Source Voltage VGS (V)

Ta=25Pulsed

—— IDRDS(ON)

VGS=-10V

VGS=-2.5V

VGS=-4.5V

Ta=25Pulsed

-4

Drain Current ID (A)

On-

Resistance

R

DS

(ON

) (m

Ω)

Transfer C haracteristics

Drain

Current

I D

(A

)

Gate to Source Voltage VGS (V)

VSDSI ——

Sou

rce

Cur

rent

I S

(A

)

Source to Drain Voltage SD (V)

25 125-0.4

-0.6

-0.8

-1.0

-1.2

ID=-250uA

Threshold Voltage

Thr

esho

ld V

olta

ge

VT

H

(V

)

50 75 100

Junction Temperature Tj ()

PJM3401PSASingle P−Channel Power MOSFET

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Package Outline

SOT-23（TO-236)

Ordering InformationDevice Package Shipping

PJM3401PSA SOT-23 3000/Reel&Tape(7inch)

1.0

0.8

2.2

1.9

1.0

0.8

SOT-23 (TO-236)

Recommended Soldering Pad

SymbolDimensions in millimeter

Min. Typ. Max.A 0.900 1.025 1.150

A1 0.000 0.050 0.100b 0.300 0.400 0.500c 0.080 0.115 0.150D 2.800 2.900 3.000

E 1.200 1.300 1.400HE 2.250 2.400 2.550e 1.800 1.900 2.000

L

0.550REFL1

0.300 0.500θ 0o 8o

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PJM3401PSASingle P−Channel Power MOSFET

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Conditions of Soldering and Storage

Recommended condition of reflow soldering

Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:

Time length of peak temperature (longer) Time length of soldering (longer) Thickness of solder paste (thicker)

Conditions of hand soldering

Temperature: 370 OC Time: 3s max. Times: one time

Storage conditions

Temperature5 to 40 OC

Humidity30 to 80% RH

Recommended periodOne year after manufacturing

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PJM3401PSASingle P−Channel Power MOSFET

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SOT-23 (TO-236)

30,000 pcs per box10 reels per box

120,000 pcs per carton 4 boxes per carton

3,000 pcs per reel1

2

3

455

240

435

220

217

210

Cover Tape

Carrier Tape

1.The method of packaging and dimension are shown as below figure. (Units:mm)

2.. Tape and reel data (Units:mm)

1Pin N

4.0

4.0

8.0

G

Symbol

B

Ø 54.5±0.2C

12.3±0.3D 9.6+2/-0.3T1 1.0±0.2T2 1.2±0.2N 3.15±0.1G 1.25±0.1

AValue (unit: mm)

EF

Ø 177.8±12.7±0.2

Ø 13.5±0.2 Reel (7'')

Tape (8mm)

A

B

C

E

F

T1

D

T2

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