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PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD) SOP OXFORD PLASMALAB SYSTEM 100 June 2013 Interface Overview. The Oxford software is divided into 5 main screens. 1) Pump Control page 2) Recipe page 3) System Log page 4) Chamber1 Process Control page 5) Service mode There are several informational items that are common across all interface screens (Fig.1). a) Main Menu b) Screen Title c) Stop All Auto Processes This acts as a soft emergency stop for the system. Using this method resets the internal system controller, stopping all running processes. THIS CANNOT BE USED IF THE LOADLOCK ARM IS INSIDE THE CHAMBER. DOING SO COULD DAMAGE THE GATE VALVE BETWEEN THE LOADLOCK AND MAIN CHAMBER. d) System Status Indicators If any indicators are red the system will not operate. 1) Pump Control page Fig. 1: Pump Control page. Use this screen to control both the loadlock and main system pumps. The left half of the screen is dedicated to the loadlock, the right half to the process chamber.

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Page 1: PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD…louisville.edu/micronano/files/documents/standard-operating... · PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD) SOP OXFORD PLASMALAB

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD) SOP

OXFORD PLASMALAB SYSTEM 100

June 2013

Interface Overview. The Oxford software is divided into 5 main screens.

1) Pump Control page

2) Recipe page

3) System Log page

4) Chamber1 Process Control page

5) Service mode

There are several informational items that are common across all interface screens (Fig.1).

a) Main Menu

b) Screen Title

c) Stop All Auto Processes

This acts as a soft emergency stop for the system. Using this method resets the internal

system controller, stopping all running processes. THIS CANNOT BE USED IF THE LOADLOCK

ARM IS INSIDE THE CHAMBER. DOING SO COULD DAMAGE THE GATE VALVE BETWEEN

THE LOADLOCK AND MAIN CHAMBER.

d) System Status Indicators

If any indicators are red the system will not operate.

1) Pump Control page

Fig. 1: Pump Control page. Use

this screen to control both the

loadlock and main system

pumps. The left half of the

screen is dedicated to the

loadlock, the right half to the

process chamber.

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2) Recipe page

Fig. 2: Recipe Editor. This

screen is used for

building/editing recipes and

selecting the wafer handling

mode, automatic or manual.

3) System Log page

Fig. 3: Typical system log page.

A filter facility allows the

viewed events to be displayed

by event type and time of

occurrence.

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4) Chamber 1 Process Control page

Fig. 4: Chamber 1. This

screen shows the

current status of all

major subsystems.

5) Service mode page

Fig. 5: Service mode. This

page is used during

maintenance to manually

control system components,

also used to manually

transfer wafer between the

Automatic loadlock and

process chamber.

To exit from service mode, select SYSTEM MENU>>EXIT SERVICE option, the following dialog

box is displayed on Fig. 5 (right), and then click OK.

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Sample Loading

1) Vent the loadlock. SYSTEM MENU>>PUMPING button, then click STOP, then VENT on the

loadlock. (Be Careful to Not vent the chamber. The loadlock is on the left; the chamber is on the

right, and must stay under vacuum unless safety precautions are taken.) The airlock vent takes

about 4 min.

2) Lift the airlock lid and place your 4” wafer in the loadlock fork. Make sure your wafer is

seated properly between the posts on the arm.

3) Gently close the lockload door.

4) Pump the airlock to vacuum. SYSTEM MENU>>PUMPING button, then on the left, loadlock

side, click STOP, and then EVACUATE.

5) Enter your wafer ID in the dialog box. You will be able to identify your wafer run in the

system log by this ID.

6) Wait until both the loadlock and process chamber have reached a vacuum level suitable for

transfer, as indicated by green bidirectional arrow indicators shown in both respective regions

on the screen.

Automatic Run

1) Go to the recipes screen: PROCESS MENU>>RECIPES BUTTON.

2) Make sure the mode indicator in the upper left corner is selected as AUTOMATIC.

3) Click Load button. You may be prompted to “OVERWRITE CURRENT RECIPE <X>?” Click YES,

as this refers to overwriting the recipe in memory, not the recipe on disk.

4) Choose your recipe file from the list. Click OK.

5) Verify the recipe parameters in each step of your recipe. This is a good practice as there is no

recipe protection on this system.

6) Verify that the Gas Valves for shared gas channels and Gas Factors for all gasses you are

using are set properly.

7) Click the RUN button. The wafer will transfer into the chamber and the etch process will

start.

8) Wait for the etch process to complete and the chamber to pump to base pressure. A YELLOW

ALERT will display telling you the process is complete. Click OK.

9) The wafer will be unloaded back to the loadlock, and a dialog box will indicate PROCESS

COMPLETED OK.

10) Vent the loadlock. SYSTEM MENU>>PUMPING button, then click STOP, acknowledge the

confirmation message that usually appears, and then click VENT on the loadlock (Be Careful to

not vent the chamber. The loadlock is on the left; the chamber is on the right.) The airlock vent

takes 4 min.

11) Lift the airlock lid and remove your wafer. If you have further wafers to etch, load your next

wafer and repeat the above steps.

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12) If you have completed your last wafer, evacuate the loadlock to vacuum. SYSTEM

MENU>>PUMPING button, and then click EVACUATE. If there is no wafer in the loadlock, click

the CANCEL button when prompted for the Wafer ID.

Recipe Editing

Recipe editing is mostly straightforward.

A minimal recipe will always contain at least 2 steps:

1) Initialization Step

It’s important to have a simple initial step, which sets the table temperature, so that the

deposition process will not begin until the stage is at the desired temperature and the chamber

has reached your desired base pressure.

2) Deposition Step

In this step, all of the deposition parameters are set. The parameters that need to be defined

include:

- Deposition gas (es) selection with flow rate for each. Units are“SCCM”

- Chamber pressure, measured in millitorr, or mT.

- Deposition Process Time, in Hours:Minutes:Seconds.

- ICP Power, in Watts. Typical powers in the 500 to 2000 W range.

- Substrate RF Power, in Watts. Typical substrate power is in the 10 to 100 W range.

- Etc.

Chamber Cleaning

NOTE: Perform ONLY when the chamber is contaminated.

To provide a consistent environment for your deposition process, you must clean the process

chamber to remove contamination from previous film deposition processes (premature flaking

or build-up of insulation layer).

1) Before starting the cleaning process don’t forget to switch Step Up Transformer from 1400 to

180 (or 300) position.

Fig. 6: Step Up Transformer

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A basic chamber cleaning recipe found on the system is OPT 180 CHAMBER CLEAN.

2) After chamber cleaning process is finished, chamber can be vented. SYSTEM

MENU>>PUMPING button, then click STOP, then VENT on the chamber pump control.

3) Remove 3 electrodes covers and vertical ceramic radiation shield around lower electrode

(use gloves because all the parts are hot ~200°C).

4) Use vacuum cleaner to remove remaining contamination followed by wet clean process.

Wipe the showerhead, chamber walls and lower electrode with cloth + IPA alcohol (Don’t apply

IPA directly to cleaning parts).