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PMPB95ENEA80 V, single N-channel Trench MOSFET17 December 2013 Product data sheet

1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.

2. Features and benefits• Trench MOSFET technology• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm• Exposed drain pad for excellent thermal conduction• Tin-plated 100 % solderable side pads for optical solder inspection• AEC-Q101 qualified

3. Applications• Relay driver• High-speed line driver• Low-side load switch• Switching circuits

4. Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage - - 80 V

VGS gate-source voltage

Tj = 25 °C

-20 - 20 V

ID drain current VGS = 10 V; Tamb = 25 °C; t ≤ 5 s [1] - - 4.1 A

Static characteristics

RDSon drain-source on-stateresistance

VGS = 10 V; ID = 2.8 A; Tj = 25 °C - 80 105 mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad fordrain 6 cm2.

© Nexperia B.V. 2017. All rights reserved

Nexperia PMPB95ENEA80 V, single N-channel Trench MOSFET

PMPB95ENEA All information provided in this document is subject to legal disclaimers.

Product data sheet 17 December 2013 2 / 15

5. Pinning informationTable 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol

1 D drain

2 D drain

3 G gate

4 S source

5 D drain

6 D drain

7 D drain

8 S source

6

57

8 4

Transparent top view

1

2

3

DFN2020MD-6 (SOT1220)017aaa255

G

D

S

6. Ordering informationTable 3. Ordering information

PackageType number

Name Description Version

PMPB95ENEA DFN2020MD-6 DFN2020MD-6: plastic thermal enhanced ultra thin small outlinepackage; no leads; 6 terminals

SOT1220

7. MarkingTable 4. Marking codesType number Marking code

PMPB95ENEA 2A

8. Limiting valuesTable 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage - 80 V

VGS gate-source voltage

Tj = 25 °C

-20 20 V

VGS = 10 V; Tamb = 25 °C; t ≤ 5 s [1] - 4.1 A

VGS = 10 V; Tamb = 25 °C [1] - 2.8 A

ID drain current

VGS = 10 V; Tamb = 100 °C [1] - 1.8 A

IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - 11.2 A





Symbol Parameter Conditions Min Max Unit

EDS(AL)S non-repetitive drain-sourceavalanche energy

Tj(init) = 25 °C; ID = 0.46 A; DUT inavalanche (unclamped)

- 19.3 mJ

Tamb = 25 °C [1] - 1.6 W

Tamb = 25 °C; t ≤ 5 s [1] - 3.3 W

Ptot total power dissipation

Tsp = 25 °C - 15.6 W

Tj junction temperature -55 150 °C

Tamb ambient temperature -55 150 °C

Tstg storage temperature -65 150 °C

Source-drain diode

IS source current Tamb = 25 °C [1] - 1.2 A

ESD maximum rating

VESD electrostatic discharge voltage HBM [2] - 2000 V

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad fordrain 6 cm2.

[2] Measured between all pins.

Tj (°C)- 75 17512525 75- 25

017aaa123

40

80

120

Pder(%)

0

Fig. 1. Normalized total power dissipation as afunction of junction temperature

Tj (°C)- 75 17512525 75- 25

017aaa124

40

80

120

Ider(%)

0

Fig. 2. Normalized continuous drain current as afunction of junction temperature





aaa-008542

1

10-1

10

102

ID(A)

10-2

VDS (V)10-1 102101

Limit RDSon = VDS/ID

DC; Tamb = 25 °C;drain mounting pad 6 cm2

DC; Tsp = 25 °C

tp = 100 ms

tp = 10 ms

tp = 1 ms

tp = 100 µs

tp = 10 µs

IDM = single pulse

Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage

9. Thermal characteristicsTable 6. Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit

[1] - 239 275 K/Win free air

[2] - 67 77 K/W

Rth(j-a) thermal resistancefrom junction toambient

in free air; t ≤ 5 s [2] - 33 38 K/W

Rth(j-sp) thermal resistancefrom junction to solderpoint

- 4 8 K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.





017aaa542

tp (s)10-3 102 10310110-2 10-1

102

10

103

Zth(j-a)(K/W)

1

duty cycle = 1

0.750.5

0.330.25

0.20.1

0.050.02

0.010

FR4 PCB, standard footprint

Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values017aaa543

tp (s)10-3 102 10310110-2 10-1

102

10

103

Zth(j-a)(K/W)

1

duty cycle = 10.75

0.50.33 0.250.2

0.1

0.05

0.020.010

FR4 PCB, mounting pad for drain 6 cm2

Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values





10. CharacteristicsTable 7. CharacteristicsSymbol Parameter Conditions Min Typ Max Unit

Static characteristics

V(BR)DSS drain-sourcebreakdown voltage

ID = 250 µA; VGS = 0 V; Tj = 25 °C 80 - - V

VGSth gate-source thresholdvoltage

ID = 250 µA; VDS = VGS; Tj = 25 °C 1.3 1.7 2.7 V

VDS = 80 V; VGS = 0 V; Tj = 25 °C - - 1 µAIDSS drain leakage current

VDS = 80 V; VGS = 0 V; Tj = 150 °C - - 10 µA

VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 10 µA

VGS = -20 V; VDS = 0 V; Tj = 25 °C - - -10 µA

VGS = 10 V; VDS = 0 V; Tj = 25 °C - - 1 µA

IGSS gate leakage current

VGS = -10 V; VDS = 0 V; Tj = 25 °C - - -1 µA

VGS = 10 V; ID = 2.8 A; Tj = 25 °C - 80 105 mΩ

VGS = 10 V; ID = 2.8 A; Tj = 150 °C - 154 202 mΩ

RDSon drain-source on-stateresistance

VGS = 4.5 V; ID = 2.6 A; Tj = 25 °C - 92 120 mΩ

gfs forwardtransconductance

VDS = 10 V; ID = 2.8 A; Tj = 25 °C - 13.3 - S

RG gate resistance f = 1 MHz - 4.7 - Ω

Dynamic characteristics

QG(tot) total gate charge - 9.9 14.9 nC

QGS gate-source charge - 1.2 - nC

QGD gate-drain charge

VDS = 40 V; ID = 2.8 A; VGS = 10 V;Tj = 25 °C

- 1.8 - nC

Ciss input capacitance - 504 - pF

Coss output capacitance - 43 - pF

Crss reverse transfercapacitance

VDS = 40 V; f = 1 MHz; VGS = 0 V;Tj = 25 °C

- 26 - pF

td(on) turn-on delay time - 5 - ns

tr rise time - 4 - ns

td(off) turn-off delay time - 15 - ns

tf fall time

VDS = 40 V; ID = 2.8 A; VGS = 10 V;RG(ext) = 6 Ω; Tj = 25 °C

- 7 - ns

Source-drain diode

VSD source-drain voltage IS = 1.2 A; VGS = 0 V; Tj = 25 °C - 0.8 1.2 V





VDS (V)0 542 31

aaa-008543

6.2

3.1

9.3

12.4

ID(A)

0

10 V 4.5 V3.6 V

3.2 V

3 V

2.8 V

VGS = 2.5 V

Tj = 25 °C

Fig. 6. Output characteristics: drain current as afunction of drain-source voltage; typical values

aaa-008544

VGS (V)0 321

10-4

10-5

10-3

ID(A)

10-6

min typ max

Tj = 25 °C; VDS = 5 V

Fig. 7. Sub-threshold drain current as a function ofgate-source voltage

aaa-008545

ID (A)1 1395

200

100

300

400

RDSon(mΩ)

0

3.0 V 3.2 V

3.6 V

4.5 V

VGS = 2.8 V

10 V

Tj = 25 °C

Fig. 8. Drain-source on-state resistance as a functionof drain current; typical values

VGS (V)0 10.07.52.5 5.0

aaa-008546

200

100

300

400

RDSon(mΩ)

0

Tj = 150 °C

Tj = 25 °C

ID = 2.8 A

Fig. 9. Drain-source on-state resistance as a functionof gate-source voltage; typical values





VGS (V)0 431 2

aaa-008547

8

10

6

4

2

12

14ID(A)

0

Tj = 150 °C Tj = 25 °C

VDS > ID × RDSon

Fig. 10. Transfer characteristics: drain current as afunction of gate-source voltage; typical values

Tj (°C)-60 1801200 60

aaa-008548

1.3

0.9

1.7

2.1

a

0.5

Fig. 11. Normalized drain-source on-state resistanceas a function of junction temperature; typicalvalues

Tj (°C)-60 1801200 60

aaa-008549

2.0

2.5

1.5

1.0

0.5

3.0

3.5VGS(th)

(V)

0

max

typ

min

ID = 0.25 mA; VDS = VGS

Fig. 12. Gate-source threshold voltage as a function ofjunction temperature

aaa-008550

VDS (V)10-1 102101

102

103

C(pF)

10

Ciss

Coss

Crss

f = 1 MHz; VGS = 0 V

Fig. 13. Input, output and reverse transfer capacitancesas a function of drain-source voltage; typicalvalues





QG (nC)0 1084 62

aaa-008551

4

6

2

8

10VGS(V)

0

ID = 2.8 A; VDS = 40 V; Tamb = 25 °C

Fig. 14. Gate-source voltage as a function of gatecharge; typical values

017aaa137

VGS

VGS(th)

QGS1 QGS2

QGD

VDS

QG(tot)

ID

QGS

VGS(pl)

Fig. 15. MOSFET transistor: Gate charge waveformdefinitions

aaa-008552

VSD (V)0 1.20.80.4

2.4

1.2

3.6

4.8

IS(A)

0

Tj = 150 °C Tj = 25 °C

VGS = 0 V

Fig. 16. Source current as a function of source-drain voltage; typical values





11. Test information

t1t2

P

t006aaa812

duty cycle δ =

t1

t2

Fig. 17. Duty cycle definition

11.1 Quality informationThis product has been qualified in accordance with the Automotive Electronics Council(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and issuitable for use in automotive applications.

12. Package outline

12-04-30Dimensions in mm

1.11.31.92.1

1.92.1 1.0

1.2

3

2

1

4

5

6

0.510.61

0.20.3

0.65

0.250.35

0.20.3

Fig. 18. Package outline DFN2020MD-6 (SOT1220)





13. Soldering

1.35

1.25

1.05

0.9

1.1

1.2

2.5

0.935 0.935

SOT1220Footprint information for reflow soldering of DFN2020MD-6 package

sot1220_froccupied area

solder land

solder resist

solder land plus solder paste

solder paste deposit

Dimensions in mm

0.33 (6×) 0.76

0.66

0.56

0.25 0.35 0.45

0.25 (6×)

0.35 (6×)

0.65

0.65

0.45 (6×)

0.43 (6×)

0.53 (6×)

2.06

0.775

0.285

Fig. 19. Reflow soldering footprint for DFN2020MD-6 (SOT1220)





14. Revision historyTable 8. Revision historyData sheet ID Release date Data sheet status Change notice Supersedes

PMPB95ENEA v.2 20131217 Product data sheet - PMPB95ENEA v.1

Modifications: • Product status changed

PMPB95ENEA v.1 20130218 Objective data sheet - -





15. Legal information

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Productstatus [3]

Definition

Objective[short] datasheet

Development This document contains data fromthe objective specification for productdevelopment.

Preliminary[short] datasheet

Qualification This document contains data from thepreliminary specification.

Product[short] datasheet

Production This document contains the productspecification.

[1] Please consult the most recently issued document before initiating orcompleting a design.

[2] The term 'short data sheet' is explained in section "Definitions".[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case ofmultiple devices. The latest product status information is available onthe Internet at URL http://www.nexperia.com.

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Quick reference data — The Quick reference data is an extract of theproduct data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makes norepresentation or warranty that such applications will be suitable for thespecified use without further testing or modification.

Customers are responsible for the design and operation of theirapplications and products using Nexperia products, and Nexperiaaccepts no liability for any assistance with applications orcustomer product design. It is customer’s sole responsibility to determinewhether the Nexperia product is suitable and fit for thecustomer’s applications and products planned, as well as for the plannedapplication and use of customer’s third party customer(s). Customers shouldprovide appropriate design and operating safeguards to minimize the risksassociated with their applications and products.

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Limiting values — Stress above one or more limiting values (as defined inthe Absolute Maximum Ratings System of IEC 60134) will cause permanentdamage to the device. Limiting values are stress ratings only and (proper)operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant orrepeated exposure to limiting values will permanently and irreversibly affectthe quality and reliability of the device.

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16. Contents1 General description ............................................... 12 Features and benefits ............................................13 Applications ........................................................... 14 Quick reference data ............................................. 15 Pinning information ...............................................26 Ordering information .............................................27 Marking ................................................................... 28 Limiting values .......................................................29 Thermal characteristics .........................................410 Characteristics .......................................................611 Test information ................................................... 1011.1 Quality information ............................................. 1012 Package outline ................................................... 1013 Soldering .............................................................. 1114 Revision history ...................................................1215 Legal information .................................................1315.1 Data sheet status ............................................... 1315.2 Definitions ...........................................................1315.3 Disclaimers .........................................................1315.4 Trademarks ........................................................ 14

© Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: [email protected] Date of release: 17 December 2013