pmt560enea - nexperia · 2017. 3. 20. · pmt560enea aosocnw((25(rcccnietecoeocroh nexperia...

PMT560ENEA100 V N-channel Trench MOSFET14 July 2016 Product data sheet

1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223(SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.

2. Features and benefits• Logic level compatible• Very fast switching• Trench MOSFET technology• ElectroStatic Discharge (ESD) protection > 2 kV HBM• AEC-Q101 qualified

3. Applications• Relay driver• High-speed line driver• Low-side loadswitch• Switching circuits

4. Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage - - 100 V

VGS gate-source voltage

Tj = 25 °C

-20 - 20 V

ID drain current VGS = 10 V; Tamb = 25 °C [1] - - 1.1 A

Static characteristics

RDSon drain-source on-stateresistance

VGS = 10 V; ID = 1.1 A; Tj = 25 °C - 527 715 mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting padfor drain 6 cm2.

© Nexperia B.V. 2017. All rights reserved

Nexperia PMT560ENEA100 V N-channel Trench MOSFET

PMT560ENEA All information provided in this document is subject to legal disclaimers.

Product data sheet 14 July 2016 2 / 16

5. Pinning informationTable 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol

1 G gate

2 D drain

3 S source

4 D drain1 32

4

SC-73 (SOT223)

017aaa255

G

D

S

6. Ordering informationTable 3. Ordering information

PackageType number

Name Description Version

PMT560ENEA SC-73 plastic surface-mounted package with increasedheatsink; 4 leads

SOT223

7. MarkingTable 4. Marking codesType number Marking code

PMT560ENEA 56ENEA





8. Limiting valuesTable 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage - 100 V

VGS gate-source voltage

Tj = 25 °C

-20 20 V

VGS = 10 V; Tamb = 25 °C [1] - 1.1 AID drain current

VGS = 10 V; Tamb = 100 °C [1] - 0.7 A

IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - 4.4 A

EDS(AL)S non-repetitive drain-sourceavalanche energy

Tj(init) = 25 °C; ID = 0.1 A; DUT inavalanche (unclamped)

- 5.3 mJ

[2] - 750 mWTamb = 25 °C

[1] - 1.9 W

Ptot total power dissipation

Tsp = 25 °C - 6.25 W

Tj junction temperature -55 150 °C

Tamb ambient temperature -55 150 °C

Tstg storage temperature -65 150 °C

Source-drain diode

IS source current Tamb = 25 °C [1] - 1.1 A

ESD maximum rating

VESD electrostatic discharge voltage HBM [3] - 2000 V

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting padfor drain 6 cm2.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.[3] Measured between all pins.





Tj (°C)- 75 17512525 75- 25

017aaa123

40

80

120

Pder(%)

0

Fig. 1. Normalized total power dissipation as afunction of junction temperature

Tj (°C)- 75 17512525 75- 25

017aaa124

40

80

120

Ider(%)

0

Fig. 2. Normalized continuous drain current as afunction of junction temperature

aaa-023551

VDS (V)10-1 1031 10 102

10

ID(A)

10-2

10-1

1

DC; Tamb = 25 °C; 6 cm2

DC; Tsp = 25 °C

tp = 10 µs

100 µs

1 ms

10 ms100 ms

Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage





9. Thermal characteristicsTable 6. Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit

[1] - 145 167 K/WRth(j-a) thermal resistancefrom junction toambient

in free air

[2] - 57 66 K/W

Rth(j-sp) thermal resistancefrom junction to solderpoint

- 13 20 K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2.

aaa-023552

tp (s)102 10310110-210-3 10-1

103

102

10

Zth(j-a)(K/W)

1

0.020.010

duty cycle = 1

0.750.50

0.330.25 0.20

0.100.05

FR4 PCB, standard footprint

Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical valuesaaa-023553

tp (s)102 10310110-210-3 10-1

102

Zth(j-a)(K/W)

1

10

duty cycle = 1

0.020.010

0.750.50

0.330.25 0.20

0.10 0.05

FR4 PCB, mounting pad for drain 6 cm2

Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values





10. CharacteristicsTable 7. CharacteristicsSymbol Parameter Conditions Min Typ Max Unit

Static characteristics

V(BR)DSS drain-sourcebreakdown voltage

ID = 250 µA; VGS = 0 V; Tj = 25 °C 100 - - V

VGSth gate-source thresholdvoltage

ID = 250 µA; VDS=VGS; Tj = 25 °C 1.3 1.7 2.7 V

IDSS drain leakage current VDS = 100 V; VGS = 0 V; Tj = 25 °C - - 1 µA

VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 15 µA

VGS = -20 V; VDS = 0 V; Tj = 25 °C - - -15 µA

VGS = 10 V; VDS = 0 V; Tj = 25 °C - - 1 µA

IGSS gate leakage current

VGS = -10 V; VDS = 0 V; Tj = 25 °C - - -1 µA

VGS = 10 V; ID = 1.1 A; Tj = 25 °C - 527 715 mΩ

VGS = 10 V; ID = 1.1 A; Tj = 150 °C - 1.19 1.62 Ω

RDSon drain-source on-stateresistance

VGS = 4.5 V; ID = 1 A; Tj = 25 °C - 555 805 mΩ

gfs forwardtransconductance

VDS = 10 V; ID = 1.1 A; Tj = 25 °C - 3.5 - S

RG gate resistance f = 1 MHz - 7.6 - Ω

Dynamic characteristics

QG(tot) total gate charge - 2.9 4.4 nC

QGS gate-source charge - 0.3 - nC

QGD gate-drain charge

VDS = 50 V; ID = 1.1 A; VGS = 10 V;Tj = 25 °C

- 0.7 - nC

Ciss input capacitance - 112 - pF

Coss output capacitance - 9 - pF

Crss reverse transfercapacitance

VDS = 50 V; f = 1 MHz; VGS = 0 V;Tj = 25 °C

- 7 - pF

td(on) turn-on delay time - 6 - ns

tr rise time - 8 - ns

td(off) turn-off delay time - 10 - ns

tf fall time

VDS = 50 V; ID = 1.1 A; VGS = 10 V;RG(ext) = 6 Ω; Tj = 25 °C

- 5 - ns

Source-drain diode

VSD source-drain voltage IS = 1.1 A; VGS = 0 V; Tj = 25 °C - 0.9 1.2 V





VDS (V)0 4321

aaa-0235545

ID(A)

0

2.5 V

3.0 V

2.8 V

4.5 V3.4 V3.2 V

1

2

3

4

VGS = 10 V

Tj = 25 °C

Fig. 6. Output characteristics: drain current as afunction of drain-source voltage; typical values

aaa-023555

VGS (V)0 1 2 3

10-4

10-5

10-3

ID(A)

10-6

min typ max

VDS = 5 VTj = 25 °C

Fig. 7. Subthreshold drain current as a function ofgate-source voltage

ID (A)0 1 2 3 4 5

aaa-0235562000RDSon(mΩ)

0

400

800

1200

1600

VGS = 10 V4.5 V3.4 V

2.5 V 2.8 V 3.0 V 3.2 V

Tj = 25 °C

Fig. 8. Drain-source on-state resistance as a functionof drain current; typical values

VGS (V)0 2 4 6 8 10

aaa-0235572000

RDSon(mΩ)

0

400

800

1200

1600

Tj = 150 °C

Tj = 25 °C

ID = 1.1 A

Fig. 9. Drain-source on-state resistance as a functionof gate-source voltage; typical values





VGS (V)0 2 3 41

aaa-0235585ID(A)

0

1

2

3

4

Tj = 150 °C Tj = 25 °C

VDS > ID x RDSon

Fig. 10. Transfer characteristics: drain current as afunction of gate-source voltage; typical values

Tj (°C)-60 1801200 60

aaa-0235592.5

a

0

0.5

1

1.5

2

Fig. 11. Normalized drain-source on-state resistanceas a function of junction temperature; typicalvalues

Tj (°C)-60 1801200 60

aaa-0235603VGS(th)

(V)

0

1.5

0.5

1

2

2.5

max

typ

min

ID = 250 μA; VDS = VGS

Fig. 12. Gate-source threshold voltage as a function ofjunction temperature

VDS (V)10-1 1 10 102

aaa-023561103

C(pF)

1

10

102

Crss

Coss

Ciss

f = 1 MHz; VGS = 0 V

Fig. 13. Input, output and reverse transfer capacitancesas a function of drain-source voltage; typicalvalues





QG (nC)0 321

aaa-02356210VGS(V)

0

2

4

6

8

VDS = 50 V; ID = 1.1 A

Fig. 14. Gate-source voltage as a function of gatecharge; typical values

003aaa508

VGS

VGS(th)

QGS1

QGS2

QGD

VDS

QG(tot)

ID

QGS

VGS(pl)

Fig. 15. Gate charge waveform definitions

VSD (V)0 0.4 0.8 1.2

aaa-0235634

IS(A)

0

1

2

3

Tj = 150 ºC Tj = 25 ºC

VGS = 0 V

Fig. 16. Source current as a function of source-drain voltage; typical values





11. Test information

t1t2

P

t006aaa812

duty cycle δ =

t1

t2

Fig. 17. Duty cycle definition

11.1 Quality informationThis product has been qualified in accordance with the Automotive Electronics Council(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and issuitable for use in automotive applications.





12. Package outline

UNIT A1 bp c D E e1 HE Lp Q ywv

REFERENCESOUTLINEVERSION

EUROPEANPROJECTION ISSUE DATEIEC JEDEC JEITA

mm 0.100.01

1.81.5

0.800.60

b1

3.12.9

0.320.22

6.76.3

3.73.3 2.3

e

4.6 7.36.71.10.7

0.950.85 0.1 0.10.2

DIMENSIONS (mm are the original dimensions)

SOT223 SC-73 04-11-1006-03-16

w Mbp

D

b1

e1

e

A

A1

Lp

Q

detail X

HE

E

v M A

AB

B

c

y

0 2 4 mm

scale

A

X

1 32

4

Plastic surface-mounted package with increased heatsink; 4 leads SOT223

Fig. 18. Package outline SC-73 (SOT223)





13. Soldering

sot223_fr

1.2(4×)

1.2(3×)

1.3(4×)

1.3(3×)6.15

7

3.85

3.6

3.5

0.3

3.9 7.65

2.3 2.3

6.1

4

2 31

solder lands

solder resist

occupied area

solder paste

Dimensions in mm

Fig. 19. Reflow soldering footprint for SC-73 (SOT223)

sot223_fw

1.9

6.7

8.9

8.7

1.9(3×)

1.9(2×)1.1

6.2

2.7 2.7

2

4

31

solder lands

solder resist

occupied area

preferred transportdirection during soldering

Dimensions in mm

Fig. 20. Wave soldering footprint for SC-73 (SOT223)





14. Revision historyTable 8. Revision historyData sheet ID Release date Data sheet status Change notice Supersedes

PMT560ENEA v.1 20160714 Product data sheet - -





15. Legal information

15.1 Data sheet statusDocumentstatus [1][2]

Productstatus [3]

Definition

Objective[short] datasheet

Development This document contains data fromthe objective specification for productdevelopment.

Preliminary[short] datasheet

Qualification This document contains data from thepreliminary specification.

Product[short] datasheet

Production This document contains the productspecification.

[1] Please consult the most recently issued document before initiating orcompleting a design.

[2] The term 'short data sheet' is explained in section "Definitions".[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case ofmultiple devices. The latest product status information is available onthe Internet at URL http://www.nexperia.com.

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Quick reference data — The Quick reference data is an extract of theproduct data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makes norepresentation or warranty that such applications will be suitable for thespecified use without further testing or modification.

Customers are responsible for the design and operation of theirapplications and products using Nexperia products, and Nexperiaaccepts no liability for any assistance with applications orcustomer product design. It is customer’s sole responsibility to determinewhether the Nexperia product is suitable and fit for thecustomer’s applications and products planned, as well as for the plannedapplication and use of customer’s third party customer(s). Customers shouldprovide appropriate design and operating safeguards to minimize the risksassociated with their applications and products.

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Limiting values — Stress above one or more limiting values (as defined inthe Absolute Maximum Ratings System of IEC 60134) will cause permanentdamage to the device. Limiting values are stress ratings only and (proper)operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant orrepeated exposure to limiting values will permanently and irreversibly affectthe quality and reliability of the device.

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16. Contents1 General description ............................................... 12 Features and benefits ............................................13 Applications ........................................................... 14 Quick reference data ............................................. 15 Pinning information ...............................................26 Ordering information .............................................27 Marking ................................................................... 28 Limiting values .......................................................39 Thermal characteristics .........................................510 Characteristics .......................................................611 Test information ................................................... 1011.1 Quality information ............................................. 1012 Package outline ................................................... 1113 Soldering .............................................................. 1214 Revision history ...................................................1315 Legal information .................................................1415.1 Data sheet status ............................................... 1415.2 Definitions ...........................................................1415.3 Disclaimers .........................................................1415.4 Trademarks ........................................................ 15

© Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: [email protected] Date of release: 14 July 2016

1. General description2. Features and benefits3. Applications4. Quick reference data5. Pinning information6. Ordering information7. Marking8. Limiting values9. Thermal characteristics10. Characteristics11. Test information12. Package outline13. Soldering14. Revision history15. Legal information