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Potential Flexible Electronics Applications Using CNF as Substrate: Opportunities and Challenges
Zhenqiang (Jack) MaZhenqiang (Jack) MaLynn H. Matthias Professor in Engineering and
Vilas Distinguished Achievement Professor@ i [email protected]
University of Wisconsin-MadisonDepartment of Electrical and Computer Engineering
In collaboration with Dr. Zhiyong Cai and Dr. Ronald Sabo at Forest Product Lab,
P f Sh i (S h) G UW M di d P f W idd ZhProf. Shaoqing (Sarah) Gong at UW-Madison and Prof. Weiddong Zhou at
University of Texas-Arlington
Electronics research funded by AFOSR Dr Gernot Pomrenke
NNI/FS Workshop: Cellulose Nanomaterials – A Path Towards Commercialization
Electronics research funded by AFOSR, Dr. Gernot Pomrenke
May 20-21, 20141
OutlineOutline
R l f l t i i US d ld• Role of electronics in US and world economy (GDP).
• Electronic garbage.• Electronics manufacturing and what is needed
for an electronic chip.• “Chip” can be made on foreign substrates, p g ,
including on disposable CNF substrates, using single crystal nanomembranes.g y
• Challenges
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Electronics contribution to world and US economy
http://india-reports.in/shop/power-point-slide-on-telecom-electronics-hardware-production-as-share-of-gdp-for-select-countries-including-india/ 3
http://india-reports.in/shop/power-point-slide-on-telecom-electronics-hardware-production-as-share-of-gdp-for-select-countries-including-india/
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Electronics help on• GDP growthGDP growth• Job opportunity• Life quality• …
<Financial Times, http://ftalphaville.ft.com/blog/2012/04/04/947201/the-return-of-, p // p / g/ / / / /the-us-manufacturer/>
5
<Financial Times, http://ftalphaville.ft.com/blog/2012/04/04/947201/the-return-of-the-us-manufacturer/>
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Electronic garbage
http://www.scientificamerican.com/blog/post.cfm?id=major-us-recycler-vows-to-stop-ship-2008-09-23http://urbanmedialabwaste.files.wordpress.com/2011/04/e-
waste.jpg
426 000 Discarded Cellphones/day in USSeptember 2007, IEEE Spectrum
http://urbanmedialabwaste.wordpress.com/author/cindypound/
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Histogram of electronic products collected for recycling or disposed from 2000 to 2009
http://www.electronicstakeback.com/2011/01/26/epas-new-figures-show-most-e-waste-still-getting-trashed/
In 2009, as in previous years, the vast majority (82.3%) of e-waste discarded in the U.S. is still ending up in our landfills andincinerators, with only 17.7 percent going to recyclers
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Table of electronic products collected for recycling or disposed in2010
Facts and Figures on E-Waste and Recycling9
Quantity of electronic products collected for recycling or disposed, by type and by year.
U.S. Environmental Protection Agency Office of Resource Conservation and Recovery Electronics Waste Management in the United States Through 2009
http://www.epa.gov/osw/conserve/materials/ecycling/docs/fullbaselinereport2011.pdf10
Electronics product manufacturing cycle
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Electronic chip manufacturing (as an example)
Cross section of a fabricated chipCross section of a fabricated chip
Device layer thickness <0.3 um
Expensive resources, such as precious and rare earth metals are used.12
Electronic chip manufacturing
525 um for 4 inch wafer
675 um for 6 inch wafer
775 um for 12 inch wafer
725 um for 8 inch wafer
775 um for 12 inch wafer
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Various examples of
“Chips” on foreign substrates(Flexible electronics research at UW-Madison)
Typical process for releasing and transferring single-crystal semiconductors
Various examples of transferred single crystal
semiconductors
Sacrificial layer Finish transferring Si
Stacked Si
layer
StartFinish transferring Si
P tt d d t
New host substrate
Place nanomembranePattern and undercut
Stamp
Place nanomembrane
GaAs InP
Finish undercutting Pick up nanomembrane
14K. Zhang, et al, J. Phys. D: Appl. Phys. 45 (2012) 143001.
(Flexible) “Chips” on foreign substrates
World’s first radio-frequency (RF) flexible
thin-film transistorthin film transistor (TFT)
Yuan and Ma, APL 89, 212105, (2006)., ( )
H C Y Z M l J A l PhH.-C. Yuan, Z. Ma, et al., J. Appl. Phys.102, 034501 (2007).
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Very fast flexible “Chips” on foreign substrates
Strips
PET
(a)
(b) (b’)
Light
“Local”mask Local
alignment markers
Finished circuits
(c) (d)
Light
Flexible substrate
PET PET(e) (f)
Light
1 cm 1 cmPDMS PET
30
40W = 40 um, L = 1 umV = 2 V V = 4 V
10
20
30dB
), H
21(d
B)
Gmax
Vgs = 2 V, Vds = 4 V
fmax= 12 GHz
-10
0
10
108 109 1010
Gm
ax ( H21
fT=3.8GHz
16
108 109 1010Frequency (GHz)
L. Sun, et al, Small 6(22), 2010.Higher frequency/speed is readily feasible.
Radio frequency passives on foreign substrates
17L. Sun, et al., APL (96) 013509, (2010)
Toward low-cost and disposable electronics“transistors” on CNF s bstrates--“transistors” on CNF substrates
(Flexible electronics research between UW-Madison and FPL)Strips N b S b t tStrips Nanomembrane Substrate
Transferred SiNM on
Au
Transferred SiNM oncellulose nanofiber
substrate
SiNM
18Au
Working flexible transistors demonstrated on CNF films
1 10-6
Vg=0VVg=1V 7
10-6
1.4 10-7Vd=0.1V
6 10-7
8 10-7Vg=1VVg=2VVg=3VVg=4VVg=5V
nt (A
)
10-9
10-8
10-7
8 10-8
1 10-7
1.2 10-7
nt (A
)
Transcon
ID
gm
d
4 10-7
Dra
in C
urre
10-11
10-10
10
4 10-8
6 10-8
8 10
Dra
in C
urre
ductance (s
I
0
2 10-7
D
10-13
10-12
10
0
2 10-8D s)IG
0 1 2 3 4 5 6 7
Drain Voltage (V)
10-4 -2 0 2 4
Gate Voltage (V)
R Sabo et al Proceedings of 2012 TAPPI International Conference on
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R. Sabo, et al., Proceedings of 2012 TAPPI International Conference on Nanotechnology for Renewable Materials, Montreal, Canada, June 4-7, 2012.
ChallengesChallenges
i f C b i• Requirements for CNF substrate properties – Surface smoothness– Mechanical strength– RF properties– Dielectric properties– Thermal properties– Processing and metrology compatibility with
semiconductor infrastructure– Reliability– Moisture barrier/Encapsulation
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