power management devices selection guide - renesas … · 2016-05-16 · power management devices...

www.am.necel.com/powermanagement

Power Management Devices Selection Guide > Power MOSFETs> ESD Protection Diodes> Regulators

August 2008

Contents

Low-Voltage Power MOSFETs ..........................................................3

By Part Number ..........................................................................4

By Package ...............................................................................13

ESD Protection Diodes .................................................................23

Low-Dropout Voltage Regulators................................................27

Reference Information

Online product information ..................................................29

Part numbering convention ....................................................30

Package outline .......................................................................33

Discrete Package lineup ..........................................................42

Packaging quantity ..................................................................43

Package production location .................................................45

Lead-free information .............................................................47

TABLE OF CONTENTS

POWER MOSFETS

NEC Electronics America 3

Low

-Vo

ltag

e Po

wer

MO

SFE

Ts

Low-Voltage Power MOSFETs

Description

Due mainly to the rapid expansion of mobile applications, the role of power MOSFETs for power management is becoming increasingly important. NEC Electronics provides best-in-class solutions for various power management requirements with a wide-ranging product lineup. These solutions take advantage of an innovative 0.25-micron wafer fabrication process—the finest process in the power device world—and sophisticated assembly technology based on our long-established experience.

Features

• Super-lowON-resistance

• Awidevarietyofproductsforapplicationsrangingfrom automotive electronics to PC power supplies

• Awidevarietyofpackagetypestosuiteverymounting requirement

• Highreliabilitybasedonlong-termexperienceinthe automotive industry

4 NEC Electronics America

Low

-Vol

tage

Pow

er M

OS

FETs

(by

par

t num

ber a

nd s

erie

s in

des

cend

ing

orde

r)

Part

N

umbe

rPo

lar-

ity

VDSS

(V)

Confi

gura

tion

ID(D

C)

(A)

RD

S (O

N) m

ax. (

mO

hm) a

t VG

S =

Qg

(Nc)

Tapi

ng T

ype

NEC

Ele

ctro

nics

Pa

ckag

ePa

ckag

ePa

ckag

e Q

uant

ity

Pb-F

ree

Id

enti

fi-ca

tion

10V

5V4.

5V4V

2.5V

1.8V

1.5V

µPA

679T

BN

/P20

Com

plem

enta

ry0.

3557

060

088

0-T

1, -T

26-

pin

SSP

SC-

7030

00A

µPA

678T

BP

-20

Dua

l-0

.25

1450

1550

2980

µPA

677T

BN

200.

3557

060

088

0

µPA

675T

16S

ingl

e0.

112

000

1500

0

µPA

672T

50D

ual

2000

040

000

µPA

654T

TP

-12

Sin

gle

-2.5

8813

323

43

-E1,

-E2

6-pi

n W

SO

F

µPA

653T

T-3

016

526

730

4

µPA

652T

T-2

0-2

294

336

514

µPA

651T

T-5

6988

142

6

µPA

650T

T-1

250

6811

4

µPA

622T

TN

303

8212

013

94

µPA

621T

T20

550

5379

3

µPA

620T

T38

3954

µPA

611T

A30

Dua

l0.

180

0015

000

-T1,

-T2

6-pi

n M

MS

C-59

µPA

610T

AP

-30

-0.1

1300

023

000

µPA

607T

-50

-0.1

6000

010

0000

µPA

606T

N50

0.1

2500

030

000

µPA

603T

P-5

0-0

.160

000

1000

00

µPA

602T

N50

0.1

2500

030

000

2500

0

µPA

573T

P-3

0-0

.125

000

1000

005-

pin

SSP

SC-

70

µPA

572T

N30

0.1

8000

1300

08

µPA

508T

E20

MO

SFE

T S

chot

tky

Dio

de2

5157

903

6-pi

n TM

MS

C-95

/SO

T-6

µPA

507T

EP

-20

-285

120

180

5

µPA

505T

N/P

50Co

mpl

emen

tary

0.1

2500

030

000

5-pi

n M

MS

C-59

µPA

503T

P-5

0D

ual

-0.1

6000

010

0000

µPA

502T

N50

0.1

2500

030

000

µPA

2810

T1L

P-3

0S

ingl

e-1

312

2340

-E1,

-E2

8-pi

n H

VSO

F (3

333)

AY

µPA

2801

T1L

N30

169.

615

11

µPA

2800

T1L

177.

310

17

µPA

2211

P-1

2-8

2434

13-T

1,-T

28-

pin

VSO

F (1

629)

AT

µPA

2210

-20

3041

81

µPA

2201

N20

918

2766

11

µPA

2200

308

2331

15

µPA

2521

16.5

257.

68-

pin

VSO

F (2

429)


Low

-Vo

ltag

e Po

wer

MO

SFE

Ts

by p

art

nu

mb

er

Low

-Vol

tage

Pow

er M

OS

FETs

(by

par

t num

ber a

nd s

erie

s in

des

cend

ing

orde

r)

Part

N

umbe

rPo

lar-

ity

VDSS

(V)

Confi

gura

tion

ID(D

C)

(A)

RD

S (O

N) m

ax. (

mO

hm) a

t VG

S =

Qg

(Nc)

Tapi

ng T

ype

NEC

Ele

ctro

nics

Pa

ckag

ePa

ckag

ePa

ckag

e Q

uant

ity

Pb-F

ree

Id

enti

fi-ca

tion

10V

5V4.

5V4V

2.5V

1.8V

1.5V

µPA

2520

N30

1013

.217

10.8

-T1,

-T2

8-pi

n VS

OF

(242

9)30

00AT

µPA

2590

N/P

±30

Com

plem

enta

ry4.

550

/72

83/1

056.

6

µPA

2550

P-1

2D

ual

540

607.

5

µPA

2794

GR

N/P

60Co

mpl

emen

tary

5.5

4356

-E1,

-E2

SO

P-8

SO

-825

00A

µPA

2793

GR

407

2736

µPA

2792

GR

3010

1826

µPA

2791

GR

582

110

SO

P-8

3000

µPA

2790

GR

628

4011

SO

-825

00

µPA

2782

GR

NM

OS

FET

Sch

ottk

y D

iode

1115

22.5

29

µPA

2781

GR

139.

515

.117

.2

µPA

2780

GR

147.

511

.613

.7

µPA

2757

GR

N30

Dua

l5

3650

-E1,

-E2

SO

P-8

3000

µPA

2756

GR

604

105

150

µPA

2755

GR

308

1829

2500

µPA

2754

GR

1114

.515

18.6

25

µPA

2753

GR

821

.431

.636

.415

µPA

2752

GR

2335

4110

µPA

2751

GR

915

.521

23.9

21

µPA

2750

GR

21

µPA

2733

GR

P-3

0S

ingl

e-5

4053

3000

µPA

2732

UT1

A-4

03.

76.

713

3-T

1, -T

28-

pin

HVS

ON

(605

1)µP

A27

31U

T1A

-44

3.3

6.4

149

µPA

2727

UT1

AN

3016

9.6

153.

3-E

1, -E

28-

pin

HVS

ON

(6

051)

µPA

2726

UT1

A20

711

4.9

µPA

2725

UT1

A25

57.

57.

1

µPA

2724

UT1

A29

3.3

512

µPA

2723

UT1

A33

2.5

3.5

23

µPA

2722

UT1

A29

3.3

4.6

20

µPA

2728

GR

1310

.518

SO

P-8

µPA

2721

GR

194.

35.

6S

OP-

825

00

µPA

2720

GR

147

10

µPA

2719

GR

P-3

0-1

013

20.9

25.5

43

µPA

2718

GR

-13

914

.518

.267


Low

-Vol

tage

Pow

er M

OS

FETs

(by

par

t num

ber a

nd s

erie

s in

des

cend

ing

orde

r)

Part

N

umbe

rPo

lar-

ity

VDSS

(V)

Confi

gura

tion

ID(D

C)

(A)

RD

S (O

N) m

ax. (

mO

hm) a

t VG

S =

Qg

(Nc)

Tapi

ng T

ype

NEC

Ele

ctro

nics

Pa

ckag

ePa

ckag

ePa

ckag

e Q

uant

ity

Pb-F

ree

Id

enti

fi-ca

tion

10V

5V4.

5V4V

2.5V

1.8V

1.5V

µPA

2717

GR

P-3

0S

ingl

e-1

55.

58.

910

.413

0-E

1, -E

2S

OP-

8S

O-8

2500

A

µPA

2716

GR

-14

711

.313

.595

µPA

2715

GR

-18

4.5

813

0

µPA

2714

GR

-720

3034

31

µPA

2713

GR

-816

2530

35

µPA

2712

GR

-10

1321

2642

µPA

2709

GR

N30

1310

.515

3.3

µPA

2708

GR

175.

57.

538

µPA

2707

GR

194.

35.

652

µPA

2706

GR

1115

22.5

297

µPA

2702

GR

139.

515

.117

.29

µPA

2701

GR

147.

511

.613

.712

µPA

2680

T1E

20M

OS

FET

Sch

ottk

y D

iode

350

606L

D 3

× 3

MLP

3000

µPA

2650

T1E

Dua

l3.

866

µPA

2610

T1C

P-2

0S

ingl

e-5

6988

142

8LD

3 ×

2 M

LPM

µPA

2452

TLN

24D

ual

7.8

21.5

22.5

306-

pin

HW

SO

N

µPA

2451

TL30

8.2

2021

329

µPA

2451

CTL

µPA

2451

BTL

µPA

2450

TL20

8.6

17.5

18.5

27.5

9

µPA

2450

CTL

8

µPA

2450

CTL

µPA

2450

BTL

µPA

2351

T1G

305.

740

4264

-E20

74-

pin

EFLI

P

µPA

2350

T1G

20D

ual

635

3755

5000

µPA

1981

TEN

/PCo

mpl

emen

tary

2.8

0.07

0.10

5-T

1, -T

26-

pin

TMM

SC-

95/S

OT-

630

00

µPA

1980

TEP

-20

MO

SFE

T S

chot

tky

Dio

de-2

135

183

284

µPA

1970

TEN

20D

ual

2.2

6972

107

µPA

1952

TEP

-20

-213

518

328

4

µPA

1951

TE-1

2-2

.588

133

234

µPA

1950

TE13

020

537

52

µPA

1930

TE-3

0S

ingl

e-4

.577

100

7

µPA

1919

TE-2

0-6

5860

846


Low

-Vo

ltag

e Po

wer

MO

SFE

Ts

by p

art

nu

mb

er

Low

-Vol

tage

Pow

er M

OS

FETs

(by

par

t num

ber a

nd s

erie

s in

des

cend

ing

orde

r)

Part

N

umbe

rPo

lar-

ity

VDSS

(V)

Confi

gura

tion

ID(D

C)

(A)

RD

S (O

N) m

ax. (

mO

hm) a

t VG

S =

Qg

(Nc)

Tapi

ng T

ype

NEC

Ele

ctro

nics

Pa

ckag

ePa

ckag

ePa

ckag

e Q

uant

ity

Pb-F

ree

Id

enti

fi-ca

tion

10V

5V4.

5V4V

2.5V

1.8V

1.5V

µPA

1918

TEP

-60

Sin

gle

-3.5

143

179

190

12-T

1, -T

26-

pin

TMM

SC-

95/S

OT-

630

00A

µPA

1917

TE-2

0-6

5370

107

8

µPA

1916

TE-1

2-4

.539

5598

8

µPA

1915

TE-2

055

5890

5

µPA

1914

TE-3

057

8696

11

µPA

1913

TE-2

055

5890

6

µPA

1912

TE-1

250

5270

µPA

1911

ATE

-20

-2.5

115

120

190

3

µPA

1902

TEN

307

2230

µPA

1901

TE6.

539

4054

6

µPA

1890

GR

N/P

Com

plem

enta

ry6

2737

4714

-E1,

-E2

TSS

OP-

8

µPA

1874

GR

ND

ual

814

14.5

19.5

µPA

1874

BG

R25

00

µPA

1873

GR

206

2324

299

3000

µPA

1872

GR

1013

13.5

1815

µPA

1872

BG

R25

00

µPA

1871

GR

306

2627

389

3000

µPA

1870

GR

2020

2127

10

µPA

1870

BG

R25

00

µPA

1858

GR

P-2

0-5

24.5

25.5

3812

3000

µPA

1857

GR

N60

3.8

6786

95

µPA

1856

GR

P-2

0-4

.545

4877

6

µPA

1840

GR

N20

0S

ingl

e2.

250

016

µPA

1830

GR

P-3

0-9

1724

.528

2500

µPA

1820

GR

N20

128.

68.

812

2730

00

µPA

1819

GR

P-3

0-1

212

18.5

22

µPA

1818

GR

-20

-10

15.2

1625

µPA

1817

GR

-20

-12

1212

.519

.2

µPA

1816

GR

-12

-915

1622

.541

.515

µPA

1815

GR

-20

-715

1623

25

µPA

1814

GR

-30

1624

2738

µPA

1809

GR

N30

821

2932

µPA

1808

GR

9.5

1723

26

µPA

1807

GR

1210

1416

19

µPA

1806

GR

138.

511

.513

28


Low

-Vol

tage

Pow

er M

OS

FETs

(by

par

t num

ber a

nd s

erie

s in

des

cend

ing

orde

r)

Part

N

umbe

rPo

lar-

ity

VDSS

(V)

Confi

gura

tion

I D(D

C)

(A)

RD

S (O

N) m

ax. (

mO

hm) a

t VG

S =

Qg

(Nc)

Tapi

ng T

ype

NEC

Ele

ctro

nics

Pa

ckag

ePa

ckag

ePa

ckag

e Q

uant

ity

Pb-F

ree

Id

enti

fi-ca

tion

10V

5V4.

5V4V

2.5V

1.8V

1.5V

µPA

1804

GR

N30

Sin

gle

823

3214

-E1,

-E2

TSS

OP-

825

00A

µPA

1803

GR

1216

36

µPA

1793

GN

/P20

Com

plem

enta

ry3

6972

107

3S

OP-

8S

O-8

µPA

1792

G30

6.8

2636

4214

µPA

1790

G60

126

034

08

µPA

1774

GP

-60

Dua

l-2

.825

030

033

08

3000

µPA

1772

G-3

0-8

2029

.534

34

µPA

1770

G-2

0-6

3739

5911

2500

µPA

1764

GN

607

3542

4629

µPA

1763

G4.

547

5766

20

µPA

1759

G5

150

240

9

µPA

1750

GP

-20

-3.5

9018

018

µPA

1728

GN

60S

ingl

e9

2629

3431

µPA

1727

G10

1922

2545

µPA

1726

G20

129.

110

12.5

25

µPA

1725

G7

2122

3010

µPA

1724

G10

1112

1518

µPA

1723

G13

6.7

7.4

8.7

47

µPA

1717

GP

-30

-633

5920

NP9

0N04

MU

GN

4090

3M

P-25

ZKTO

-263

800

AZ

NP8

8N07

5KU

E75

888.

515

0

NP8

8N05

5KU

G55

4.2

NP8

8N04

NU

G40

3.5

MP-

25 F

in C

ut20

0

NP8

8N04

KUG

2.9

-E1,

-E2

MP-

25ZK

800

NP8

8N03

KUG

302.

4

NP8

4N07

5KU

E75

8412

.510

0

NP8

2N05

5PU

G55

825.

210

6

NP8

2N04

PUG

403.

5

NP8

2N03

PUG

302.

8

NP7

0N04

MU

G40

705.

7

NP6

0N05

5KU

G55

609.

461

NP6

0N04

MU

G40

6.7

NP6

0N04

KUG

6.1

63

NP6

0N03

KUG

304.

862

NP5

5N05

5SU

G55

5510

60M

P-3Z

KTO

-252

2000


Low

-Vo

ltag

e Po

wer

MO

SFE

Ts

by p

art

nu

mb

er

Low

-Vol

tage

Pow

er M

OS

FETs

(by

par

t num

ber a

nd s

erie

s in

des

cend

ing

orde

r)

Part

N

umbe

rPo

lar-

ity

VDSS

(V)

Confi

gura

tion

ID(D

C)

(A)

RD

S (O

N) m

ax. (

mO

hm) a

t VG

S =

Qg

(Nc)

Tapi

ng T

ype

NEC

Ele

ctro

nics

Pa

ckag

ePa

ckag

ePa

ckag

e Q

uant

ity

Pb-F

ree

Id

enti

fi-ca

tion

10V

5V4.

5V4V

2.5V

1.8V

1.5V

NP5

5N05

5SD

GN

55S

ingl

e55

9.5

1264

-E1,

-E2

MP-

3ZK

TO-2

5220

00A

Z

NP5

2N05

5SU

G52

1438

NP3

6N05

5HLE

3613

1618

53M

P-3

TO-2

5150

0A

NP3

6N05

5HH

E14

44

NP3

4N05

5HLE

3418

2224

41

NP3

4N05

5HH

E19

30

NP3

2N05

5HLE

3224

2933

27

NP3

2N05

5HH

E25

21

NP2

2N05

5HLE

2237

4551

15

NP2

2N05

5HH

E39

12

NP1

80N

04TU

G40

180

1.5

-E1,

-E2

TO-2

63 7

-pin

TO-2

6380

0

NP1

60N

04TU

G16

02

NP1

60N

04TD

G5.

4

NP1

10N

055P

UG

5511

02.

8M

P-25

ZP

NP1

10N

04PU

G40

1.8

NP1

10N

04PD

G3.

2

NP1

10N

03PU

G30

1.7

NP1

09N

04PU

G40

2.3

180

TO-2

63 3

-pin

2SK4

091-

ZK30

3013

21M

P-3Z

KTO

-252

2500

2SK4

091-

S15

MP-

3TO

-251

70

2SK4

090-

ZK64

611

-E1,

-E2

MP-

3ZK

TO-2

5225

00

2SK4

090-

S15

MP-

3TO

-251

70

2SK4

080-

ZK48

710

.2-E

1, -E

2M

P-3Z

KTO

-252

2500

2SK4

080

MP-

3TO

-251

70

2SK4

078-

ZK40

508.

5-E

1, -E

2M

P-3Z

TO-2

5225

00

2SK4

069-

ZK25

309.

415

MP-

3ZK

2SK4

069

MP-

3TO

-251

70

2SK4

058-

ZK48

6.3

9.8

-E1,

-E2

MP-

3ZK

TO-2

5225

00

2SK4

058

MP-

3TO

-251

70

2SK4

057-

ZK30

1525

14-E

1, -E

2M

P-3Z

KTO

-252

2500

2SK4

057

MP-

3TO

-251

70

2SK3

993-

ZK64

3.8

7.8

88-E

1, -E

2M

P-3Z

KTO

-252

2500

2SK3

993

MP-

3TO

-251

70

2SK3

992-

ZK4.

810

.856

-E1,

-E2

MP-

3ZK

TO-2

5225

00

2SK3

992

MP-

3TO

-251

70


Low

-Vol

tage

Pow

er M

OS

FETs

(by

par

t num

ber a

nd s

erie

s in

des

cend

ing

orde

r)

Part

N

umbe

rPo

lar-

ity

VDSS

(V)

Confi

gura

tion

I D(D

C)

(A)

RD

S (O

N) m

ax. (

mO

hm) a

t VG

S =

Qg

(Nc)

Tapi

ng T

ype

NEC

Ele

ctro

nics

Pa

ckag

ePa

ckag

ePa

ckag

e Q

uant

ity

Pb-F

ree

Id

enti

fi-ca

tion

10V

5V4.

5V4V

2.5V

1.8V

1.5V

2SK3

991-

ZKN

25S

ingl

e30

1330

.217

-E1,

-E2

MP-

3ZK

TO-2

5225

00A

2SK3

991

MP-

3TO

-251

70

2SK3

984-

ZK10

020

85-E

1, -E

2M

P-3Z

KTO

-252

2500

AZ

2SK3

919-

ZK25

645.

613

.742

2SK3

919

MP-

3TO

-251

70

2SK3

918-

ZK48

7.5

22.2

28-E

1, -E

2M

P-3Z

KTO

-252

2500

2SK3

918

28M

P-3

TO-2

5170

2SK3

712-

Z25

09

580

14-E

1, -E

2M

P-3Z

TO-2

5220

00

2SK3

664

200.

557

060

088

0-T

1, -T

23-

pin

USM

SC-

7530

00A

2SK3

663

3-pi

n SS

PS

C-70

2SK3

659

655.

79.

932

MP-

45F

TO-2

20IS

O20

0A

Z

2SK3

643-

ZK30

646

948

-E1,

-E2

MP-

3ZK

TO-2

5225

00

2SK3

642-

ZK9.

516

23

2SK3

641-

ZK36

1425

22

2SK3

640-

ZK19

2140

14

2SK3

639-

ZK20

645.

58.

545

2SK3

638-

ZK8.

515

22

2SK3

635-

Z20

08

430

12M

P-3Z

2000

2SK3

635

MP-

3TO

-251

500

2SK3

634-

Z6

600

9-E

1, -E

2M

P-3Z

TO-2

5220

00

2SK3

634

MP-

3TO

-251

500

2SK3

576

204

0.5

0.53

0.75

-T1B

, -T2

B3-

pin

TMM

SC-

96 (S

OT-

23)

3000

A

2SK3

575-

ZK30

834.

56.

470

-E1,

-E2

MP-

25ZK

TO-2

6380

0A

Z

2SK3

575-

ZM

P-25

Z

2SK3

575-

SM

P-25

Fin

Cut

TO-2

6220

0

2SK3

575

MP-

25TO

-220

2SK3

574-

ZK48

13.5

2422

-E1,

-E2

MP-

25ZK

TO-2

6380

0

2SK3

574-

ZM

P-25

Z

2SK3

574-

SM

P-25

Fin

Cut

TO-2

6220

0

2SK3

574

MP-

25TO

-220

2SK3

573-

ZK20

834

668

-E1,

-E2

MP-

25ZK

TO-2

6380

0

2SK3

573-

ZM

P-25

Z

2SK3

573-

SM

P-25

Fin

Cut

TO-2

6220

0

2SK3

573

MP-

25TO

-220

2SK3

572-

ZK80

5.7

9.9

32-E

1, -E

2M

P-25

ZKTO

-263

800


Low

-Vo

ltag

e Po

wer

MO

SFE

Ts

by p

art

nu

mb

er

Low

-Vol

tage

Pow

er M

OS

FETs

(by

par

t num

ber a

nd s

erie

s in

des

cend

ing

orde

r)

Part

N

umbe

rPo

lar-

ity

VDSS

(V)

Confi

gura

tion

ID(D

C)

(A)

RD

S (O

N) m

ax. (

mO

hm) a

t VG

S =

Qg

(Nc)

Tapi

ng T

ype

NEC

Ele

ctro

nics

Pa

ckag

ePa

ckag

ePa

ckag

e Q

uant

ity

Pb-F

ree

Id

enti

fi-ca

tion

10V

5V4.

5V4V

2.5V

1.8V

1.5V

2SK3

572-

ZN

20S

ingl

e80

9.9

32-E

1, -E

2M

P-25

Z80

0A

Z

2SK3

572-

SM

P-25

Fin

Cut

TO-2

6220

0

2SK3

572

5.7

MP-

25TO

-220

2SK3

571-

ZK48

916

21M

P-25

ZKTO

-263

800

2SK3

571-

ZM

P-25

Z

2SK3

571-

SM

P-25

Fin

Cut

TO-2

6220

0

2SK3

571

MP-

25TO

-220

2SK3

570-

ZK12

2223

-E1,

-E2

MP-

25ZK

TO-2

6380

0

2SK3

570-

ZM

P-25

Z

2SK3

570-

SM

P-25

Fin

Cut

TO-2

6220

0

2SK3

570

MP-

25TO

-220

2SK3

503

160.

112

000

1500

0-T

1, -T

23-

pin

USM

SC-

7530

00A

2SK3

295

2035

1827

16M

P-25

TO-2

2020

0A

Z

2SK3

107

300.

150

0080

0015

000

-T1,

-T2

3-pi

n U

SMS

C-75

3000

A

2SK3

054

5020

000

4000

03-

pin

SSP

SC-

70

2SK2

858

3050

0080

00

2SK2

857

604

150

220

3-pi

n Po

MM

SC-

62/S

OT-

8910

00A

Z

2SK2

157

305

100

150

MP-

2S

C-84

2SK2

090

500.

120

000

4000

03-

pin

SSP

SC-

7030

00A

2SK2

055

100

235

045

0M

P-2

SC-

8410

00A

Z

2SK2

054

603

200

250

2SK2

053

165

120

150

2SK1

958

0.1

1200

015

000

3-pi

n SS

PS

C-70

3000

A

2SK1

824

3080

0013

000

3-pi

n U

SMS

C-75

2SK1

658

2500

045

000

3-pi

n SS

PS

C-70

2SK1

586

160

010

003-

pin

PoM

MS

C-62

/SO

T-89

1000

AZ

2SK1

580

1610

000

1500

03-

pin

SSP

SC-

7030

00A

2SJ6

48P

-20

-0.4

1450

1550

2980

3-pi

n U

SMS

C-75

2SJ6

473-

pin

SSP

SC-

70

2SJ6

25-3

113

171

314

-T1B

, -T2

B3-

pin

TMM

SC-

96 (S

OT-

23)

2SJ6

24-4

.554

7110

8

2SJ6

21-1

2-3

.544

6210

5

2SJ5

59-3

0-0

.113

000

2300

060

000

-T1,

-T2

3-pi

n U

SMS

C-75

2SJ4

63A

3-pi

n SS

PS

C-70


Low

-Vol

tage

Pow

er M

OS

FETs

(by

par

t num

ber a

nd s

erie

s in

des

cend

ing

orde

r)

Part

N

umbe

rPo

lar-

ity

VDSS

(V)

Confi

gura

tion

ID(D

C)

(A)

RD

S (O

N) m

ax. (

mO

hm) a

t VG

S =

Qg

(Nc)

Tapi

ng T

ype

NEC

Ele

ctro

nics

Pa

ckag

ePa

ckag

ePa

ckag

e Q

uant

ity

Pb-F

ree

Id

enti

fi-ca

tion

10V

5V4.

5V4V

2.5V

1.8V

1.5V

2SK3

572-

ZP

-60

Sin

gle

-330

040

0-T

1, -T

2M

P-2

SC-

8410

00A

Z

2SK3

572-

S-3

0-3

200

350

2SJ3

56-6

0-2

500

950

3-pi

n Po

MM

SC-

62/S

OT-

89

2SJ3

55-3

035

060

0

2SJ2

43-0

.125

000

1000

003-

pin

USM

SC-

7530

00A

2SJ2

02-1

630

000

3-pi

n SS

PS

C-70


Low

-Vo

ltag

e Po

wer

MO

SFE

Ts

by p

acka

ge

Low

-Vol

tage

Pow

er M

OS

FETs

(by

pac

kage

)

NEC

Ele

ctro

nics

Pa

ckag

ePa

ckag

ePa

rt N

umbe

rPo

lar-

ity

VDSS

(V)

Confi

gura

tion

I D(D

C)

(A)

RD

S (O

N) m

ax. (

mO

hm) a

t VG

S =

Qg

(Nc)

Tapi

ng

Type

Pack

age

Qua

ntit

y

Pb-F

ree

Id

enti

fi-ca

tion

10V

5V4.

5V4V

2.5V

1.8V

1.5V

TSS

OP-

8µP

A18

03G

RN

30S

ingl

e8

1216

36-E

1, -E

230

00A

µPA

1804

GR

2332

14

µPA

1830

GR

P-3

0-9

1724

.528

µPA

1870

BG

RN

20D

ual

620

2127

10

µPA

1872

BG

R10

1313

.518

15

µPA

1874

BG

R30

814

14.5

19.5

14

µPA

1806

GR

Sin

gle

138.

511

.513

28

µPA

1807

GR

1210

1416

19

µPA

1808

GR

9.5

1723

26

µPA

1809

GR

821

2932

µPA

1814

GR

P-3

0-7

1624

2738

µPA

1815

GR

-20

1516

2325

µPA

1816

GR

-12

-922

.541

.515

µPA

1817

GR

-20

-12

1212

.519

.2

µPA

1818

GR

-10

15.2

1625

µPA

1819

GR

-30

-12

1218

.522

µPA

1820

GR

N20

128.

68.

812

27

µPA

1840

GR

200

2.2

500

16

µPA

1856

GR

P-2

0D

ual

-4.5

4548

776

µPA

1857

GR

N60

3.8

6786

9512

µPA

1858

GR

P-2

0-5

24.5

25.5

38

µPA

1870

GR

N20

620

2127

10

µPA

1871

GR

3026

2738

9

µPA

1872

GR

2010

1313

.518

15

µPA

1873

GR

623

2429

9

µPA

1874

GR

308

1414

.519

.514

µPA

1890

GR

N/P

Com

plem

enta

ry6

2737

47

8-pi

n H

VSO

N

(605

1)µP

A27

31U

T1A

P-3

0S

ingl

e-4

43.

36.

414

9-T

1, -T

2

µPA

2732

UT1

A-4

03.

76.

713

3

µPA

2722

UT1

AN

3029

3.3

4.6

20-E

1, E

2

µPA

2723

UT1

A33

2.5

3.5

23

µPA

2724

UT1

A29

3.3

512

µPA

2725

UT1

A25

57.

57.

1

µPA

2726

UT1

A20

711

4.9

µPA

2727

UT1

A16

9.6

153.

3


Low

-Vol

tage

Pow

er M

OS

FETs

(by

pac

kage

)

NEC

Ele

ctro

nics

Pa

ckag

ePa

ckag

ePa

rt N

umbe

rPo

lar-

ity

VDSS

(V)

Confi

gura

tion

ID(D

C)

(A)

RD

S (O

N) m

ax. (

mO

hm) a

t VG

S =

Qg

(Nc)

Tapi

ng

Type

Pack

age

Qua

ntit

y

Pb-F

ree

Id

enti

fi-ca

tion

10V

5V4.

5V4V

2.5V

1.8V

1.5V

8-pi

n M

ini H

VSO

N

(333

3)µP

A28

000T

1LN

30S

ingl

e17

7.3

1017

-T1,

-T2

3000

AY

µPA

2801

T1L

169.

615

11

µPA

2810

T1L

P-3

0-1

312

2340

8-pi

n VS

OF

Slim

µPA

2200

N30

823

3115

AT

µPA

2201

209

1827

11

µPA

2210

P-2

0-8

3041

8113

µPA

2211

-12

-824

3466

13

8-pi

n VS

OF

(2

429)

µPA

2520

N30

1013

.217

10.8

µPA

2521

816

.525

7.6

µPA

2590

N/P

±30

Com

plem

enta

ry4.

550

/72

83/1

056.

6

µPA

2550

P-1

2D

ual

540

607.

5

SO

P-8

SO

-8µP

A17

72G

P-3

0-8

2029

.534

3425

00A

µPA

1774

G-6

0-2

.825

030

033

08

µPA

2733

GR

-30

Sin

gle

-540

53

µPA

2756

GR

N60

Dua

l4

105

150

µPA

1717

GP

-30

Sin

gle

-633

5920

µPA

1723

GN

2013

6.7

7.4

8.7

47

µPA

1724

G10

1112

1518

µPA

1725

G7

2122

3010

µPA

1726

G12

9.1

1012

.525

µPA

1727

G60

1019

2225

45

µPA

1728

G9

2629

3431

µPA

1750

GP

-20

Dua

l-3

.590

180

18

µPA

1759

GN

605

150

240

9

µPA

1763

G4.

547

5766

20

µPA

1764

G7

3542

4629

µPA

1770

GP

-20

-637

3959

11

µPA

1790

GN

/P60

Com

plem

enta

ry1

260

340

8

µPA

1792

G30

6.8

2636

4214

µPA

1793

G20

369

7210

73

µPA

2701

GR

N30

Sin

gle

147.

511

.613

.712

-E1,

-E2


Low

-Vo

ltag

e Po

wer

MO

SFE

Ts

by p

acka

ge

Low

-Vol

tage

Pow

er M

OS

FETs

(by

pac

kage

)

NEC

Ele

ctro

nics

Pa

ckag

ePa

ckag

ePa

rt N

umbe

rPo

lar-

ity

VDSS

(V)

Confi

gura

tion

I D(D

C)

(A)

RD

S (O

N) m

ax. (

mO

hm) a

t VG

S =

Qg

(Nc)

Tapi

ng

Type

Pack

age

Qua

ntit

y

Pb-F

ree

Id

enti

fi-ca

tion

10V

5V4.

5V4V

2.5V

1.8V

1.5V

SO

P-8

SO

-8µP

A27

02G

RN

30S

ingl

e13

9.5

15.1

17.2

9-E

1, -E

225

00A

µPA

2706

GR

1115

22.5

297

µPA

2707

GR

194.

35.

652

µPA

2708

GR

175.

57.

538

µPA

2709

GR

1310

.515

3.3

µPA

2712

GR

P-3

0-1

013

2126

42

µPA

2713

GR

-816

2530

35

µPA

2714

GR

P-3

0S

ingl

e-7

2030

3431

µPA

2715

GR

-18

4.5

813

0

µPA

2716

GR

-14

711

.313

.595

µPA

2717

GR

-15

5.5

8.9

10.4

130

µPA

2718

GR

-13

914

.518

.267

µPA

2719

GR

-10

1320

.925

.543

µPA

2720

GR

N30

147

10

µPA

2721

GR

194.

35.

6

µPA

2722

UG

R21

3.3

4.6

µPA

2750

GR

Dua

l9

15.5

2123

.921

µPA

2751

GR

µPA

2752

GR

823

3541

10

µPA

2753

GR

21.4

31.6

36.4

15

µPA

2754

GR

1114

.515

18.6

25

µPA

2755

GR

818

29

µPA

2780

GR

MO

SFE

T S

chot

tky

Dio

de14

7.5

11.6

13.7

µPA

2781

GR

139.

515

.117

.2

µPA

2782

GR

1115

22.5

29

µPA

2790

GR

N/P

Com

plem

enta

ry6

2840

11

µPA

2792

GR

1018

26

µPA

2793

GR

407

2736

µPA

2794

GR

605.

543

56

µPA

2722

GR

N30

Sin

gle

213.

34.

6

µPA

2728

GR

1310

.518

µPA

2757

GR

Dua

l5

3650

µPA

2791

GR

N/P

Com

plem

enta

ry82

110

µPA

2714

GR

P-3

0S

ingl

e-7

2030

3431

µPA

2715

GR

-18

4.5

813

0


Low

-Vol

tage

Pow

er M

OS

FETs

(by

pac

kage

)

NEC

Ele

ctro

nics

Pa

ckag

ePa

ckag

ePa

rt N

umbe

rPo

lar-

ity

VDSS

(V)

Confi

gura

tion

I D(D

C)

(A)

RD

S (O

N) m

ax. (

mO

hm) a

t VG

S =

Qg

(Nc)

Tapi

ng

Type

Pack

age

Qua

ntit

y

Pb-F

ree

Id

enti

fi-ca

tion

10V

5V4.

5V4V

2.5V

1.8V

1.5V

SO

P-8

SO

-8µP

A27

16G

RP

-30

Sin

gle

-E1,

-E2

2500

A

µPA

2717

GR

µPA

2718

GR

-13

914

.518

.267

µPA

2719

GR

-10

1320

.925

.543

µPA

2720

GR

N30

147

10

µPA

2721

GR

194.

35.

6

µPA

2722

UG

R21

3.3

4.6

µPA

2750

GR

Dua

l9

15.5

2123

.921

µPA

2751

GR

µPA

2752

GR

823

3541

10

µPA

2753

GR

21.4

31.6

36.4

15

µPA

2754

GR

1114

.515

18.6

25

µPA

2755

GR

818

29

µPA

2780

GR

MO

SFE

T S

chot

tky

Dio

de14

7.5

11.6

13.7

µPA

2781

GR

139.

515

.117

.2

µPA

2782

GR

1115

22.5

29

µPA

2790

GR

N/P

Com

plem

enta

ry6

2840

11

µPA

2792

GR

1018

26

µPA

2793

GR

407

2736

µPA

2794

GR

605.

543

56

µPA

2722

GR

N30

Sin

gle

213.

34.

6

µPA

2728

GR

1310

.518

µPA

2757

GR

Dua

l5

3650

µPA

2791

GR

N/P

Com

plem

enta

ry82

110

MP-

25TO

-220

2SK3

295

N20

Sin

gle

3518

2716

200

AZ

2SK3

570

4812

2223

2SK3

571

916

21

2SK3

572

805.

79.

932

2SK3

573

834

668

2SK3

574

3048

13.5

2422

2SK3

575

834.

56.

470

MP-

45F

TO

-22

0IS

O2S

K365

920

655.

79.

932


Low

-Vo

ltag

e Po

wer

MO

SFE

Ts

by p

acka

ge

Low

-Vol

tage

Pow

er M

OS

FETs

(by

pac

kage

)

NEC

Ele

ctro

nics

Pa

ckag

ePa

ckag

ePa

rt N

umbe

rPo

lar-

ity

VDSS

(V)

Confi

gura

tion

I D(D

C)

(A)

RD

S (O

N) m

ax. (

mO

hm) a

t VG

S =

Qg

(Nc)

Tapi

ng

Type

Pack

age

Qua

ntit

y

Pb-F

ree

Id

enti

fi-ca

tion

10V

5V4.

5V4V

2.5V

1.8V

1.5V

MP-

3TO

-251

2SK4

057

N25

Sin

gle

3015

2514

70A

Z

2SK4

058

486.

39.

8

2SK4

069

309.

415

2SK4

080

3048

710

.2

2SK3

634

200

660

09

2SK3

635

843

012

2SK3

918

2548

7.5

22.2

28

2SK3

919

645.

613

.742

2SK3

991

3013

30.2

17

2SK3

992

644.

810

.856

2SK3

993

3.8

7.8

88

NP2

2N05

5HH

E55

2239

1250

0

NP2

2N05

5HLE

3745

5115

NP3

2N05

5HH

E32

2521

NP3

2N05

5HLE

2429

3327

NP3

4N05

5HH

E34

1930

NP3

4N05

5HLE

1822

2441

NP3

6N05

5HH

E36

1444

NP3

6N05

5HLE

1316

1853

2SK4

090-

S15

3064

611

70

2SK4

091-

S15

3013

21

MP-

3ZK

TO-2

522S

K405

7-ZK

2515

2514

-E1,

-E2

2500

2SK4

058-

ZK48

6.3

9.8

2SK4

069-

ZK30

9.4

15

2SK4

080-

ZK30

487

10.2

2SK3

638-

ZK20

648.

515

22

2SK3

639-

ZK5.

58.

545

2SK3

640-

ZK30

1921

4014

2SK3

641-

ZK36

1425

22

2SK3

642-

ZK64

9.5

1623

2SK3

643-

ZK6

948

2SK3

918-

ZK25

487.

522

.228

2SK3

919-

ZK64

5.6

13.7

42

2SK3

984-

ZK10

020

85

2SK3

991-

ZK25

3013

30.2

17


Low

-Vol

tage

Pow

er M

OS

FETs

(by

pac

kage

)

NEC

Ele

ctro

nics

Pa

ckag

ePa

ckag

ePa

rt N

umbe

rPo

lar-

ity

VDSS

(V)

Confi

gura

tion

ID(D

C)

(A)

RD

S (O

N) m

ax. (

mO

hm) a

t VG

S =

Qg

(Nc)

Tapi

ng

Type

Pack

age

Qua

ntit

y

Pb-F

ree

Id

enti

fi-ca

tion

10V

5V4.

5V4V

2.5V

1.8V

1.5V

MP-

3ZK

TO-2

522S

K399

2-ZK

N25

Sin

gle

644.

810

.856

-E1,

-E2

2500

AZ

2SK3

993-

ZK3.

87.

888

NP5

2N05

5SU

G55

5214

38

NP5

5N05

5SD

G55

9.5

1264

NP5

5N05

5SU

G55

1060

2SK4

090-

ZK30

646

11

2SK4

091-

ZK30

1321

2SK3

634-

Z20

06

600

9

2SK3

635-

Z8

430

12

2SK3

712-

Z25

09

580

14

2SK4

078-

ZK40

508.

5

MP-

25 F

in C

ut

TO-2

622S

K357

0-S

2048

1222

2320

0

2SK3

571-

S9

1621

2SK3

572-

S80

5.7

9.9

32

2SK3

573-

S83

46

68

2SK3

574-

S30

4813

.524

22

2SK3

575-

S83

4.5

6.4

70

NP8

8N04

NU

G40

883.

5

TO-2

63 7

-pin

TO

-263

-7N

P160

N04

TDG

160

25.

4-E

1, -E

280

0

NP1

60N

04TU

G

NP1

80N

04TU

G18

01.

5

NP1

09N

04PU

G11

02.

318

0

MP-

25ZP

TO-2

63N

P110

N03

PUG

301.

7

NP1

10N

04PD

G40

1.8

3.2

NP1

10N

04PU

G

NP1

10N

055P

UG

552.

8

NP8

2N03

PUG

3082

106

NP8

2N04

PUG

403.

5

NP8

2N05

5PU

G55

5.2

2SK3

570-

ZK20

4812

2223

2SK3

571-

ZK9

1621

2SK3

572-

ZK80

5.7

9.9

32

2SK3

573-

ZK83

46

68

2SK3

574-

ZK30

4813

.524

22

2SK3

575-

ZK83

4.5

6.4

70


Low

-Vo

ltag

e Po

wer

MO

SFE

Ts

by p

acka

ge

Low

-Vol

tage

Pow

er M

OS

FETs

(by

pac

kage

)

NEC

Ele

ctro

nics

Pa

ckag

ePa

ckag

ePa

rt N

umbe

rPo

lar-

ity

VDSS

(V)

Confi

gura

tion

I D(D

C)

(A)

RD

S (O

N) m

ax. (

mO

hm) a

t VG

S =

Qg

(Nc)

Tapi

ng

Type

Pack

age

Qua

ntit

y

Pb-F

ree

Id

enti

fi-ca

tion

10V

5V4.

5V4V

2.5V

1.8V

1.5V

MP-

25ZP

TO-2

63N

P60N

03KU

GN

30S

ingl

e60

4.8

62-E

1, -E

280

0A

Z

NP6

0N04

KUG

46.

163

NP6

0N04

MU

G6.

7

NP6

0N05

5KU

G55

9.4

61

NP7

0N04

MU

G40

705.

7

NP8

4N07

5KU

E75

8412

.510

0

NP8

8N03

KUG

3088

2.4

NP8

8N04

KUG

402.

9

NP8

8N05

5KU

G55

4.2

NP8

8N07

5KU

E75

8.5

150

NP9

0N04

MU

G40

903

MP-

25Z

2SK3

570-

Z20

4812

2223

200

2SK3

571-

Z9

1621

2SK3

572-

Z80

5.7

9.9

32

2SK3

573-

Z83

46

68

2SK3

574-

Z30

4813

.524

22

2SK3

575-

Z83

4.5

6.4

70

8LD

3 ×

2 M

LPM

µPA

2610

T1C

P-2

0-5

6988

142

-E1,

-E2

3000

A

4-pi

n EF

LIP

µPA

2350

T1G

N20

Dua

l6

3537

55-E

207

5000

µPA

2351

T1G

305.

740

4264

3000

6-pi

n W

SO

F µP

A65

0TT

P-1

2S

ingl

e-5

5068

114

6-E

1, -E

2

µPA

620T

TN

205

3839

54

µPA

621T

T50

5379

3

µPA

622T

T30

382

120

139

4

µPA

651T

TP

-20

-569

8814

26

µPA

652T

T-2

294

336

514

µPA

653T

T-3

0-2

.516

526

730

4

µPA

654T

T-1

288

133

234

3

6-pi

n H

WS

ON

µP

A24

50BT

LN

20D

ual

8.6

17.5

18.5

27.5

8

µPA

2450

TL9

µPA

2451

BTL

308.

220

2132

µPA

2451

TL9

µPA

2452

TL24

7.8

21.5

22.5

30

µPA

2450

CTL

208.

617

.518

.527

.58

µPA

2450

CTL


Low

-Vol

tage

Pow

er M

OS

FETs

(by

pac

kage

)

NEC

Ele

ctro

nics

Pa

ckag

ePa

ckag

ePa

rt N

umbe

rPo

lar-

ity

VDSS

(V)

Confi

gura

tion

I D(D

C)

(A)

RD

S (O

N) m

ax. (

mO

hm) a

t VG

S =

Qg

(Nc)

Tapi

ng

Type

Pack

age

Qua

ntit

y

Pb-F

ree

Id

enti

fi-ca

tion

10V

5V4.

5V4V

2.5V

1.8V

1.5V

6-pi

n H

WS

ON

µPA

2451

CTL

N30

Dua

l8.

220

2132

8-E

1, -E

230

00A

6LD

3 ×

3 M

LPµP

A26

50T1

E20

3.8

66

µPA

2680

T1E

MO

SFE

T S

chot

tky

Dio

de3

5060

6-pi

n M

MS

C-59

µPA

602T

50D

ual

0.1

2500

030

000

2500

0-T

1, -T

2

µPA

603T

P-5

0-0

.160

000

1000

00

µPA

606T

N50

0.1

2500

030

000

µPA

607T

P-5

0-0

.160

000

1000

00

µPA

610T

A-3

013

000

2300

0

µPA

611T

AN

300.

180

0015

000

µPA

502T

5025

000

3000

0

µPA

503T

P-5

0-0

.160

000

1000

00

µPA

505T

N/P

50Co

mpl

emen

tary

0.1

2500

030

000

3-pi

n Po

MM

SC-

62/

SO

T-89

2SJ3

55P

-30

Sin

gle

-235

060

010

00A

Z

2SJ3

56-6

050

095

0

2SK1

586

N30

160

010

00

2SK2

857

604

150

220

6-pi

n SS

PS

C-70

µPA

672T

50D

ual

0.1

2000

040

000

3000

A

µPA

675T

16S

ingl

e12

000

1500

0

µPA

677T

B20

Dua

l0.

3557

060

088

0

µPA

678T

BP

-20

-0.2

514

5015

5029

80

µPA

679T

BN

/P20

Com

plem

enta

ry0.

3557

060

088

0

5-pi

n SS

PµP

A57

2TN

30D

ual

0.1

8000

1300

0

µPA

573T

P-3

0-0

.125

000

1000

00

3-pi

n SS

P 2S

J202

-16

Sin

gle

3000

0

2SJ4

63A

-30

1300

023

000

6000

0

2SJ6

47-2

0-0

.414

5015

5029

80

2SK1

580

N16

110

000

1500

0

2SK1

658

300.

125

000

4500

0

2SK1

958

1612

000

1500

0

2SK2

090

5020

000

4000

0

2SK2

858

3050

0080

00

2SK3

054

5020

000

4000

0

2SK3

663

200.

557

060

088

0

3-pi

n U

SMS

C-75

2SJ2

43P

-30

-0.1

2500

010

0000


Low

-Vo

ltag

e Po

wer

MO

SFE

Ts

by p

acka

ge

Low

-Vol

tage

Pow

er M

OS

FETs

(by

pac

kage

)

NEC

Ele

ctro

nics

Pa

ckag

ePa

ckag

ePa

rt N

umbe

rPo

lar-

ity

VDSS

(V)

Confi

gura

tion

I D(D

C)

(A)

RD

S (O

N) m

ax. (

mO

hm) a

t VG

S =

Qg

(Nc)

Tapi

ng

Type

Pack

age

Qua

ntit

y

Pb-F

ree

Id

enti

fi-ca

tion

10V

5V4.

5V4V

2.5V

1.8V

1.5V

3-pi

n U

SMS

C-75

2SJ5

59P

-30

Sin

gle

-0.1

1300

023

000

6000

0-T

1, -T

230

00A

2SJ6

48-2

0-0

.414

5015

5029

80

2SK1

824

N30

0.1

8000

1300

0

2SK3

107

5000

1500

0

2SK3

503

1612

000

1500

0

2SK3

664

200.

557

060

088

0

MP-

2S

C-84

2SJ3

57P

-30

-320

035

010

00A

Z

2SJ3

58-6

030

040

0

2SK2

053

N16

512

015

0

2SK2

054

603

200

250

2SK2

055

100

235

045

0

2SK2

157

305

100

150

6-pi

n TM

MS

C-95

/S

OT-

6µP

A50

7TE

P-2

0M

OS

FET

Sch

ottk

y D

iode

-285

120

180

5

µPA

508T

EN

202

5157

903

µPA

1901

TE30

Sin

gle

6.5

3940

546

µPA

1902

TE7

2230

3000

A

µPA

1911

ATE

P-2

0-2

.511

512

019

03

µPA

1912

TE-1

2-4

.550

5270

6

µPA

1913

TE-2

055

5890

µPA

1914

TE-3

057

8696

11

µPA

1915

TE-2

055

5890

5

µPA

1916

TE-1

239

5598

8

µPA

1917

TE-2

0-6

5370

107

µPA

1918

TE-6

0-3

.514

317

919

012

µPA

1919

TE-2

0-6

5860

846

µPA

1930

TE-3

0-4

.577

100

7

µPA

1950

TE-1

2D

ual

-2.5

130

205

375

2

µPA

1951

TE88

133

234

µPA

1952

TE-2

0-2

135

183

284

µPA

1970

TEN

202.

269

7210

7

µPA

1980

TEP

-20

MO

SFE

T S

chot

tky

Dio

de-2

135

183

284

µPA

1981

TEN

/PCo

mpl

emen

tary

2.8

00.

070

0.10

50

3-pi

n TM

MS

C-96

(S

OT-

23)

2SJ6

21P

-12

Sin

gle

-3.5

4462

105

-T1B

, -T2

B80

0A

Z

2SJ6

24-2

0-4

.554

7110

8


Low

-Vol

tage

Pow

er M

OS

FETs

(by

pac

kage

)

NEC

Ele

ctro

nics

Pa

ckag

ePa

ckag

ePa

rt N

umbe

rPo

lar-

ity

V DSS

(V)

Confi

gura

tion

ID(D

C)

(A)

RD

S (O

N) m

ax. (

mO

hm) a

t VG

S =

Qg

(Nc)

Tapi

ng

Type

Pack

age

Qua

ntit

y

Pb-F

ree

Id

enti

fi-ca

tion

10V

5V4.

5V4V

2.5V

1.8V

1.5V

3-pi

n TM

MS

C-96

(S

OT-

23)

2SJ6

25P

-20

Sin

gle

-311

317

131

4-T

1B, -

T2B

800

AZ

2SK3

576

N20

40.

50.

530.

75

ESD PROTECTION DIODES


ESD

Pro

tect

ion

Dio

des

ESD Protection Diodes

Description

Asdatacommunicationlinesmultiplyamongvariouspartsofcomputing and multimedia systems, the need to protect the communication interfaces from electrostatic discharge (ESD) is increasing.

Users often plug and unplug connectors for peripheral inter-faces such as USB 2.0 and expose interface chips to ESD damage through the connectors. To protect these chips, system interfaces need ESD protection devices. NEC Electronics provides protection devices that comply with appropriate interface standards.

Features

• EnsuredcompliancewithinternationalESDstandard(IEC61000-4-2 Level 4)

• Lowcapacitance,makingdevicessuitableforhigh-speedsignal lines

• Widevarietyofpackagestominimizesystemsize


ESD

Pro

tect

ion

Dio

des

Part

Num

ber

Confi

gura

tion

Pack

age

Gen

eral

Pa

ckag

e

Vz (

V)Ct (p

F)IR (µA)

ESD

(min

.)(k

V)Pb

-Fre

e S

tatu

sM

in.

Max

.

NN

CD3.

3CS

ingl

e2-

pin

USM

SC-

783.

13.

522

020

30A

NN

CD3.

6C3.

43.

821

010

NN

CD3.

9C3.

74.

120

0

NN

CD4.

3C4

4.49

180

NN

CD4.

7C4.

44.

9217

0

NN

CD5.

1C4.

825.

3916

05

NN

CD5.

6C5.

295.

9414

0

NN

CD6.

2C5.

846.

5512

0

NN

CD6.

8C6.

447.

1711

02

NN

CD7.

5C7.

037.

8790

NN

CD8.

2C7.

738.

67

NN

CD9.

1C8.

539.

58

NN

CD10

C9.

4210

.58

80

NN

CD11

C10

.411

.670

NN

CD12

C11

.38

12.6

4

NN

CD5.

6J2-

pin

XSO

F2-

pin

XSO

F5.

36.

311

05

NN

CD6.

8J6.

27.

190

2

NN

CD8.

2J7.

78.

770

NN

CD10

J9

1155

NN

CD16

J15

1730

NN

CD18

J16

.219

.825

23

NN

CD24

J22

2620

15

NN

CD36

J34

3815

12

NN

CD3.

3D2-

pin

SSP

SC-

763.

13.

522

020

30

NN

CD3.

6D3.

43.

821

010

NN

CD3.

9D3.

74.

120

0

NN

CD4.

3D4

4.49

180

NN

CD4.

7D4.

44.

9217

0

NN

CD5.

1D4.

825.

3916

05

NN

CD5.

6D5.

295.

9414

0

NN

CD6.

2D5.

856.

5512

0

NN

CD6.

8D6.

447.

1711

02

NN

CD7.

5D7.

037.

8790

NN

CD8.

2D7.

738.

67

NN

CD9.

1D8.

539.

58


ESD

Pro

tect

ion

Dio

des

ESD

Pro

tect

ion

Dio

des

Part

Num

ber

Confi

gura

tion

Pack

age

Gen

eral

Pa

ckag

e

Vz (

V)Ct (p

F)IR (µA)

ESD

(min

.)(k

V)Pb

-Fre

e S

tatu

sM

in.

Max

.

NN

CD10

DS

ingl

e2-

pin

SSP

SC-

769.

4210

.58

802

30A

NN

CD11

D10

.411

.670

NN

CD12

D11

.38

12.6

470

NN

CD3.

3FD

ual

3-pi

n M

MS

C-59

3.1

3.5

220

20

NN

CD3.

6F3.

43.

821

010

NN

CD3.

9F3.

74.

120

0

NN

CD4.

3F4.

014.

4818

0

NN

CD4.

7F4.

424.

917

0

NN

CD5.

1F4.

845.

3716

05

NN

CD5.

6F5.

315.

9214

0

NN

CD6.

2F5.

866.

5312

0

NN

CD6.

8F8-

pin

MM

6.47

7.14

110

2

NN

CD7.

5F7.

067.

8490

NN

CD8.

2F7.

768.

64

NN

CD9.

1F8.

569.

55

NN

CD10

F9.

4510

.55

80

NN

CD11

F10

.44

11.5

670

NN

CD12

F11

.42

12.6

NN

CD3.

3GQ

uad

5-pi

n M

MS

C-74

A3.

13.

522

020

NN

CD3.

6G3.

43.

821

010

NN

CD3.

9G3.

74.

120

0

NN

CD4.

3G4.

014.

4818

0

NN

CD4.

7G4.

424.

917

0

NN

CD5.

1G4.

845.

3716

05

NN

CD5.

6G5.

315.

9214

0

NN

CD6.

2G5.

866.

5312

02

NN

CD6.

8PG

6.47

7.14

90

NN

CD7.

5G7.

067.

84

NN

CD27

G25

.128

.925

NN

CD5.

6H5-

pin

SSP

SC-

88A

5.3

6.3

110

5

NN

CD6.

8PH

NN

CD6.

8PL

5-pi

n XS

OF

5-pi

n XS

OF

NN

CD5.

6LG

5-pi

n M

MS

C-74

A10

8

NN

CD6.

2LG

5.7

6.7

8

NN

CD6.

8RG

6.2

7.1

102


ESD

Pro

tect

ion

Dio

des

Part

Num

ber

Confi

gura

tion

Pack

age

Gen

eral

Pa

ckag

e

Vz (

V)Ct (p

F)IR (µA)

ESD

(min

.)(k

V)Pb

-Fre

e S

tatu

sM

in.

Max

.

NN

CD5.

6LH

Qua

d5-

pin

SSP

SC-

88A

5.3

6.3

105

8A

NN

CD6.

2LH

5.7

6.7

8

NN

CD6.

8RH

102

NN

CD6.

8RL

5-pi

n XS

OF

5-pi

n XS

OF

NN

CD6.

2MF

Dua

l3-

pin

MM

SC-

595.

76.

720

230

NN

CD5.

6MG

Qua

d5-

pin

MM

SC-

74A

5.3

6.3

265

NN

CD6.

2MG

5.7

6.7

202

NN

CD6.

8MG

6.2

7.1

NSA

D50

0FD

ual

3-pi

n M

MS

C-59

––

3.5

0.1

8

NSA

D50

0S3-

pin

SSP

SC-

70

NSA

D50

0HQ

uad

5-pi

n SS

PS

C-88

A

Key

code

: A =

lead

-fre

e bo

dy a

nd le

ads

A

Z =

lead

-fre

e le

ads

only

A

T =

lead

-fre

e bo

dy a

nd le

ads

/ pu

re-S

n pl

atin

g

ESD

pro

tect

ive

diod

es p

ack

quan

tity

is 3

,000

pie

ces/

reel

VOLTAGE REGULATORS


Low

-Dro

pou

t Vo

ltag

e R

egu

lato

rs

Low-Dropout Voltage Regulators

Description

Today’s applications for regulator ICs increasingly involve lower LSI operating voltages and require lower power consumption. In response to these needs, NEC Electronics reduced device operat-ing voltage and power consumption by using a CMOS process. Further, some devices achieve extremely low standby current by incorporating an on/off function, and the use of trimming tech-nology gives some devices highly precise output-voltage settings.

Features

• Widevarietyofproducts,rangingupwardfromalowoutputvoltage of 1.5V (μPD120Nxx)

• LowcurrentconsumptionwithCMOSprocess,reducedfrom1.5mA(μPC29Lxx)to60μA(μPD120Nxx)

• On/offfunction:μPC3033/3005

• High-precisionoutputvoltage(±1%):μPC3033/3005


Low

-Dro

pout

Vol

tage

Reg

ulat

ors

Part

Num

ber

VIN

(V) M

ax.

Io (A

)Vo

(V)

Dro

pout

Vol

tage

(V

) M

ax.

NEC

Ele

ctro

nics

Pa

ckag

eG

ener

al P

acka

gePb

-Fre

e S

tatu

sPa

ckag

ing

Qua

ntit

y

µPC2

918B

T1D

161

1.8

0.6

at IO

=0.

5ATO

-252

TO-2

52AT

2500

µPC2

918B

TM

P-3Z

S

C-63

AZ

2000

µPC2

918B

HF

MP-

45G

TO-2

2020

0

µPC2

918B

HB

MP-

3

SC-

6450

0

µPC2

925B

T1D

2.5

TO-2

52TO

-252

AT25

00

µPC2

925B

TM

P-3Z

S

C-63

AZ

2000

µPC2

925B

HF

MP-

45G

TO-2

2020

0

µPC2

925B

HB

MP-

3

SC-

6450

0

µPC2

933B

T1D

3.3

TO-2

52TO

-252

AT25

00

µPC2

933B

TM

P-3Z

S

C-63

AZ

2000

µPC2

933B

HF

MP-

45G

TO

-220

200

µPC2

933B

HB

MP-

3

SC-

6450

0

µPC2

905B

T1D

5TO

-252

TO-2

52AT

2500

µPC2

905B

TM

P-3Z

SC-

63A

Z20

00

µPC2

905B

HF

MP-

45G

TO-2

2020

0

µPC2

905B

HB

MP-

3

SC-

6450

0

µPD

120N

15TA

60.

31.

50.

9 at

IO=

0.15

AS

C-74

AS

C-74

AA

3000

µPD

120N

15T1

BS

C-62

(*S

OT-

89)

SC-

62A

Z10

00

µPD

120N

18TA

1.8

0.65

SC-

74A

SC-

74A

A30

00

µPD

120N

18T1

Bat

IO=

0.15

AS

C-62

(*S

OT-

89)

SC-

62A

Z10

00

µPD

120N

25TA

2.5

0.7

SC-

74A

SC-

74A

A30

00

µPD

120N

25T1

Bat

IO=

0.15

AS

C-62

(*S

OT-

89)

SC-

62A

Z10

00

µPD

120N

33TA

3.3

0.6

SC-

74A

SC-

74A

A30

00

µPD

120N

33T1

Bat

IO=

0.15

AS

C-62

(*S

OT-

89)

SC-

62A

Z10

00

µPC3

033H

81

3.3

0.6

at IO

=0.

5AM

P-5

(4-p

in)

TO-1

26A

Z20

0

µPC3

005H

5

µPD

1211

56

11.

51.

0V a

t IO

=1.

0ATO

-252

TO-2

52AT

2500

µPD

121W

00A

1.

51.

8 to

3.3

1.0V

at I

O=

1.5A

µPD

121W

18A

1.

8

µPD

121W

25A

2.

5

µPD

121W

33A

3.

3

µPD

121A

102

10.

7V a

t IO

=1.

0A

Key

code

: A =

lead

-fre

e bo

dy a

nd le

ads;

A

Z =

lead

-fre

e le

ads

only

; A

T =

lead

-fre

e bo

dy a

nd le

ads

/ pu

re-S

n pl

atin

g

REFERENCE INFORMATION


Ref

eren

ce In

form

atio

n

Online Product Information

http://www.am.necel.com/powermanagement

• Productdocumentationisavailableforlow-powerMOSFETS,diodesandregulators.

• Parametricsearchengineallowstheusertosearchviaaproduct’sclassification,partnumberorparameter range.


NEC Electronics Part Numbering Convention

* JEITA(JapanElectronicandInformationTechnologyIndustriesAssociation)number follows registration sequence.

Transistor (JEITA*)

2 S X X X X

Symbol Polarity Output Current

A NP Bipolar Transistor High Frequency

B PNP Bipolar Transistor Low Frequency

C NPN Bipolar Transistor High Frequency

D NPN Bipolar Transistor Low Frequency

J P-ch FET

K N-ch FET

Improvement/Change in ABC Sequence

* Integer Number > 11

Symbol Package

TA MM, SC-74

TB SSP, SC-88

TT WSOF–6P

TL HWSOF–6P

TE TMM, SC-95

TP HSOP–8P

T MM, SC-74

Transistor Array, etc.

Number No. of Pins

500-599 5-pin

600-699 6-pin

In-house Transistor

µPA X X X TA

Symbol Polarity

N N-channel

P P-channel

Tc = 175°C Power MOSFET

NP 110 N 055 P U G

Symbol Process

E UMOS II

F UMOS III

G UMOS IV

Symbol Drive Type

L Logic, G-S Protection Di

H Non-logic, G-S Protection Di

D Logic, No G-S Protection Di

U Non-logic, No G-S Protection Di

Symbol Package

C TO-220 (JEITA)

D TO-262 (JEITA)

H TO-251 (JEITA)

I TO-252 (JEITA)

K TO-263 (JEDEC)

P Avd. TO-263

R TO-251 (JEDEC)

S TO-252 (JEDEC)

Z Wafer

NEC Electronics Power MOSFET

VDSS

ID (DC)


Ref

eren

ce In

form

atio

n

Symbol Series Type

S High ESD (multi-chip)

F Low capacitance (multi-chip)

H High ESD/low capacitance (multi-chip)

Taping Type

NEC Surge Absorb Diode (NSAD)

NSAD 500 X — T1

Maximum signal frequency (MHz/GHz)

NEC Electronics

Symbol Series Type

Non High ESD (multi-chip)

L Low capacitance (multi-chip)

M High ESD/low capacitance (multi-chip)

P High ESD (monolithic chip)

R Low capacitance (monolithic chip)

S High ESD/low capacitance (monolithic chip)

Symbol Package

A DO-34

B DO-35

C SC-78

D SC-76

E SC-59

F SC-59 (dual)

G SC-74A

H SC-88A

J 2-pin XSOF

Taping Type

NEC Noise-clipping Diode (NNCD)

NNCD 6.8 X A — T1

Breakdown Voltage

NEC Electronics

NEC Electronics Part Numbering Convention (continued)


Symbol Package

TJ SC-98 (MP-3Z 5-pin)

HB SC-99 (MP-3Z 5-pin)

Symbol Output Voltage

21 2.5V/1A, 1.8V/0.5A

31 3.3V/1A, 1.8V/0.5A

32 3.3V/1A, 2.5V/0.5A

Series Regulator

µPC 29 M 33 A HF

Symbol Series Type

29 LDO positive voltage

30 LDO with ON/OFF function

37 Dual output

Symbol Output Current

HFIsolated TO-220

(MP-45G)

J TO-92

TSC-62 (PoMM)

or SC-63 (MP-3Z)

HBSC-64 (MP-3)

HTO-126 (4-pin)

or MP-5

T1D TO-252

Improved version Start with - , A, B, etc...


L 0.1A

N 0.3A

M 0.5A

— 1.0A

A 2.0A


03 3.0V

33 3.3V

05 5.0V

12 12V

µPC 37 M 31 HB

Bipolar Analog IC

NEC Electronics Part Numbering Convention (continued)

Symbol Additional Function

0 No-function

1 ON/OFF function

Symbol Package

TA SC-74A (5-pin MM)

T1B SC-62 (Power MM)

TJ SC-98 (MP-3Z)

HB SC-99 (MP-3)


L 0.1A

N 0.3A

M 0.5A

— 1.0A

W 1.5A

A 2.0A

MOS IC

Series 12: Positive Volt

Series Regulator

µPD 12 0 N XX TA


00 Adjustable

15 1.5V

18 1.8V

25 2.5V

33 3.3V


Ref

eren

ce In

form

atio

n

Package Outline

Signal SMD

NEC Electronics Package Name

Mini Mold Thin-type Mini Mold

JEDEC Package Code

— — — MO-193

JEITA Package Code

SC-59ASC-74 (6-pin)

SC-74A (5-pin)SC-96 SC-95

Products Sig MOSFET Sig MOSFET Semi Power MOSFET Semi Power MOSFET

Package Outline

Dual

Power Rating 0.2W 0.3W (total)1.25W

FR–4, t ≤ 5 sec2.0W

FR–4, t ≤ 5 sec

Signal and Power SMD


Power Mini Mold MP-2 8-pin TSSOP8-pin SOP

8-pin HSOP

JEDEC Package Code

TO-243 — MO-187 —

JEITA Package Code

SC-62 SC-84 — SC-87

Products Semi Power MOSFET Semi Power MOSFET Semi Power MOSFET Semi Power MOSFET

Package Outline

Single/Dual Single/Dual

Power Rating2W

Ceramic 16 cm2 × 0.7 mm

Up to 2W Ceramic

7.5 cm2 × 0.7 mm

Up to 2W Ceramic

50 cm2 × 1.1 mm

Up to 3W Ceramic

20 cm2 × 1.1 mm


5.0

2.0

0.8

Power SMD


6-pin HWSON 8-pin HWSON

JEDEC Package Code

— —

JEITA Package Code

— —

Products Semi Power MOSFET Semi Power MOSFET

Package Outline

Dual

Power Rating Up to 2.5W Ceramic 50 cm2 × 1.1 mm

Up to 2.7W Ceramic 50 cm2 × 1.1 mm

Package Outline (continued)

Power SMD


8-pin HVSON (6051) 4-pin EFLIP

JEDEC Package Code

— —

JEITA Package Code

— —

Products Power MOSFET Semi Power MOSFET

Package Outline

Power Rating 4.6W (t ≤ 10s) FR-4 25.4 mm × 25.4 mm × 0.8 mm

1.3WCeramic 70 mm × 70 mm × 1.0 mm


Ref

eren

ce In

form

atio

n

Power SMD


8-pin VSOF (2429) 8-pin HVSON (3333)

JEDEC Package Code

— —

JEITA Package Code

— —

Products Power MOSFET Power MOSFET

Package Outline

Power Rating ~2.2W (t ≤ 5s) FR-4 25.4 mm × 25.4 mm × 0.8 mm

3.8W (t ≤ 10s) FR-4 25.4 mm × 25.4 mm × 0.8 mm


Power SMD


8-pin VSOF (1629) TO-263-7pin (MP-25ZT )

JEDEC Package Code

— —

JEITA Package Code

— —


Package Outline

Power Rating TBD (Under Development)

1.8WTa = 25° C, Tch = 175° C


Power SMD


MP-3Z MP-25Z MP-25LZ

JEDEC Package Code

TO-252 — TO-263

JEITA Package Code

SC-63 SC-83 —

Products Semi Power MOSFET Power MOSFET Power MOSFET

Package Outline

Power Rating 2W Ceramic 7.5 cm2 × 0.7 mm

4W Ceramic 36 cm2 × 0.8 mm



Power SMD


TO-263-7

JEDEC Package Code

TO-263-7

JEITA Package Code

—

Products Power MOSFET

Package Outline

8.4 TYP.

0.025 to0.25

0.25

10.0 ±0.2

10.0 ±0.2

7.6

TYP.

1.27 TYP.

0.6 ± 0.15

9.15

±0.

2

2.54

±0.

25

14.8

5 ±0

.51.

2 ±0

.32.

5

4.45 ±0.21.3 ±0.2

0.5 ±0.20 to 8˚

Power Rating 4W Ceramic 36 cm2 × 0.8 mm


Ref

eren

ce In

form

atio

n

Through-hole Devices


SST TO-92 SP-8

JEDEC Package Code

— TO-92 —

JEITA Package Code

SC-72 SC-43A —

Products Sig MOSFET Sig MOSFET Semi Power MOSFET

Package Outline

Full Mold Full Mold Full Mold

Power Rating 0.25W 0.25, 0.75W 1.0W

1 2 3

4.45±0.210.0±0.2

9.1

5±0

.2

15

.25

±0.5

0.7 ± 0.15 2.54

0.5

2.5

10.0

4.7

59

.15

1.3

54

.45

Power SMD


MP-25ZP MP-25LZK

JEDEC Package Code

— TO-263

JEITA Package Code

— —


Package Outline

Power Rating 4W Ceramic 36 cm2 × 0.8 mm






MP-25 MP-2 Fin Cut

JEDEC Package Code

TO-220AB TO-262

JEITA Package Code

SC-46 —

Products Power Transistor Power MOSFET Power MOSFET

Package Outline

Power Rating 1.5W / up to 100W 1.5W / up to 100W




MP-3 MP-5 MP-10

JEDEC Package Code

TO-251 TO-126 —

JEITA Package Code

SC-64 — —

Products Semi Power MOSFET Power MOSFET Power MOSFET

Package Outline

Full Mold

Power Rating 1.0W / up to 20W 1.3W / up to 20W 1.8W


Ref

eren

ce In

form

atio

n



MP-45F MP-88

JEDEC Package Code

(Isolated TO-220) (T0-3P)

JEITA Package Code

— SC-65


Package Outline

Full mold

Power Rating 2W / up to 40W 3W / up to 160W

Diode-SMD


2-pin Ultra-small Mini Mold 2-pin Super-small Package

JEDEC Package Code

— —

JEITA Package Code

SC-78 SC-76

ProductsNNCD NNCD[ ] C NNCD[ ] D

RD RD[ ] UM, UJ RD[ ] S, SL

Package Outline

Package Image

Power Rating 0.15W 0.2W



1.0

0.6

1.2

1.6

1.4 0.5 1.6 0.5

Diode — SMD


2-pin XSOF 5-pin XSOF

JEDEC Package Code

— —

JEITA Package Code

— —

Products NNCD[ ] J NNCD[ ] PL, RL

Package Outline

Package Image

Power Rating 0.15W 0.2W


Diode — SMD


3-pin Mini Mold 5-pin Mini Mold5-pin Super-small

Package

JEDEC Package Code

— — — —

JEITA Package Code

SC-59A SC-59A SC-74A SC-88A

ProductsNNCD NNCD[ ] E NNCD[ ] F, MF NNCD[ ] G, MG, LG NNCD[ ] LH

RD RD[ ] M, Z RD[ ] MW — —

Package Outline

Single Twin Quad Quad

Package Image

Power Rating 0.2W 0.2W 0.2W 0.2W


Ref

eren

ce In

form

atio

n


IC Package


MP-3 (5-pin) MP-3Z (5-pin)

JEDEC Package Code

TO-251 (5-pin) TO-252 (5-pin)

JEITA Package Code

SC-99 SC-98

Products Regulator Regulator

Package Outline

Package Image

IC Package


MP-45G MP-5 (4-pin)

JEDEC Package Code

Isolated TO-220 TO-126 (4-pin)

JEITA Package Code

— —

Products Regulator Regulator

Package Outline

Package Image —


Discrete Package Lineup

JEDEC: Joint Electron Device Engineering Council; JEITA: Japan Electronics and Information Technology Industries Association; IPC: The Institute for Interconnecting and Packaging Electronic Circuits

Discrete Package Lineup


JEDEC Code

JEITA Code

IPC Code

Termi-nal

SMD DI BIP TRMOS-

FETSCR

DO-34 DO-34 – – 2 3

DO-35 DO-35 SC-40 SOD-27 2 3

DO-41 DO-41 SC-47 SOD-66 2 3

2-pin USM – SC-78 – 2 3 3

2-pin SSP – SC-76 SOD-323 2 3 3

2-pin Po MM – – SOD-106 2 3 3

TO-92 TO-92 SC-43A SOT-54 3 3 3 3

SST – SC-72 – 3 3 3

SP-8 – – – 3 3 3

USM – SC-75 SOT-416 3 3 3 3

Thin-type USM – – – 3 3 3

SSP – SC-70 SOT-323 3 3 3 3 3

5-pin SSP – SC-88A SOT-353 5 3 3 3 3

6-pin SSP – SC-88 SOT-363 6 3 3 3

MM – SC-59A SOT-346 3 3 3 3 3

5-pin MM – SC-74A SOT-457 5 3 3 3

6-pin MM – SC-74 – 6 3 3 3

Thin-type MM – SC-96 – 3 3 3

Thin-type 6-pin MM MO-193 SC-95 – 6 3 3

Po MM TO-243 SC-62 SO-89 3 3 3 3 3 3

MP-2 – SC-84 – 3 3 3 3

MP-3 TO-251 SC-64 – 3 3 3 3

MP-3Z TO-252 SC-63 – 3 3 3 3 3

MP-5 TO-126 – – 3 3 3

MP-7 – SC-53 – 3 3

MP-10 – – – 3 3 3

MP-25 TO-220AB SC-46 – 3 3 3 3

MP-25Z, LZ TO-263 SC-83 SOT-404 2 3 3 3

MP-40 – – – 3 3

MP-45 Isolated TO-220 SC-67 – 3 3 3 3

MP-45F Isolated TO-220 – – 3 3 3

MP-88 (TO-3P) SC-65 – 3 3

10, 12-pin array – – – 10, 12 3 3

4-pin EFLIP – – – 4 4

8-pin HVSON – – – 8 8

8-pin SOP, 8-pin HSOP – SC-87 SOT-96 8 3 3

8-pin TSSOP MO-187 – – 8 3 3

6-pin HWSON – – – 6 3 3

6-pin WSOF – – – 6 3 3

2-pin XSOF – – – 2 3 3

5-pin XSOF – – – 5 3 3


Ref

eren

ce In

form

atio

n

Packaging Quantity

Packaging Quantity


JEITA/JEDEC Code

Bagging Qty. Taping

Qty.Tray Qty. Taping

TypePieces/Bag Pieces/Box

Pieces/Reel

Pieces/Tray

DO-34 DO-34 200 2000 2000 T1 (box)

DO-34 DO-34 5000 T2

DO-34 DO-34 5000 T4 (box)

DO-35 SC-40/DO-35 200 2000 2000 T1 (box)

DO-35 SC-40/DO-35 5000 T2

DO-35 SC-40/DO-35 5000 T4 (box)

DO-41 SC-47/DO-41 2500 T6, T7, T8

TO-92 SC-43A/TO-92 500 10000 2500 T (box)

SST SC-72 500 10000 2500 T (box)

SP-8 – 200 5000

2-pin USM SC-78 3000 T1,T2

3-pin USM SC-75 3000 T1,T2

2-pin SSP SC-76 3000 T1,T2

3-pin SSP SC-70 3000 T1,T2

5-pin SSP SC-88A 3000 T1,T2

6-pin SSP SC-88 3000 T1,T2

3-pin MM SC-59 3000 T1B,T2B

5-pin MM SC-74A 3000 T1,T2

6-pin MM SC-74 3000 T1,T2

3-pin MM (thin-type) SC-96 3000 T1B,T2B

6-pin MM (thin-type) SC-95/MO-193 3000 T1,T2

2-pin Po MM – 1500 T1,T2

3-pin Po MM SC-62/TO-243 1000 T1,T2

MP-2 SC-84 1000 T1,T2

MP-3 SC-64/TO-251 500 5000

MP-3Z SC-63/TO-252 2000 E1,E2

MP-5 TO-126 200 5000

MP-10 – 1000 T (box)

MP-25 SC-46/TO-220AB 500 2000

MP-25 (Fin Cut) TO-262 500 2000

MP25Z SC-83 1000 E1,E2

MP-25ZJ, ZK TO-263 800 E1,E2


Packaging Quantity (continued)

Packaging Quantity


JEITA/JEDEC Code

Bagging Qty. Taping

Qty.Tray Qty. Taping

TypePieces/Bag Pieces/Box

Pieces/Reel

Pieces/Tray

MP-45 SC-67/isolated TO-220 200 2000

MP-45F SC-67/isolated TO-220 200 2000

MP-45G SC-67/isolated TO-220 200 2000

MP-88 SC-65 100 1000

8-pin HVSON (3333) – 3000 E1, E2

8-pin VSOF (2429) 3000 T1, T2

8-pin VSOF (1629) 3000 T1, T2

TO-236 7-pin 800 E1, E2

4-pin EFLIP 5000 E1,E2

8-pin HVSON 3000 E1,E2

8-pin TSSOP MO-187 3000 E1,E2

8-pin HSOP SC-87 2500 E1,E2

8-pin SOP 2500 E1,E2

8-pin DIP – 1000 Tube


14-pin SOP – 2500 E1,E2

14-pin SOP – 2000 T1,T2


16-pin SOP – 2500 E1,E2

16-pin SOP – 2000 T1,T2

HWSON – 3000 EI,E2

WSOF – 3000 EI,E2

2-pin XSOF – 3000 T1,T2

5-pin XSOF – 3000 T1,T2

5-pin MP-3 5-pin TO-251/SC-99 100

5-pin MP-3Z 5-pin TO-251/SC-98 2000 EI,E2

16-pin TSSOP (225 mil) – 2500 EI,E2

20-pin SOP (300 mil) – 2500 EI,E2


30-pin SSOP (300 mil) – 2500 EI,E2


38-pin SSOP (300 mil) – 2500 EI,E2

48-pin TQFP – 250 Tray

48-pin WQFN – 403 Tray

56-pin WQFN – 336 Tray


Ref

eren

ce In

form

atio

n

Package Production Location



General Package Name

Assembly Sites Including Subcontractors

Japan Malaysia China Korea

Low-Voltage Power MOSFETs

6-pin WSOF NA X

6-pin HWSON NA X

8LD 2 × 3 MLPM NA X

8-pin HVSON (6051) NA X

8-pin HVSON (3333) NA X

8-pin VSOF (2429) NA X

8-pin VSOF (1629) NA X

TO-236 7-pin TO-263 X

8-pin HWSON NA X

4-pin EFLIP NA X

8-pin HVSON NA X X

8-pin HSOP NA X

8-pin SOP 8-pin SOP X X X

8-pin TSSOP 8-pin TSSOP X X

Isolated TO-220 Isolated TO-220 X X X

MP-25 TO-220 X X X X

MP-25 Fin Cut TO-262 X X X X

MP-25ZJ TO-263 X X X

MP-25ZK TO-263 X X X

MP-3 TO-251 X X X

MP-3ZK TO-252 X X

Power mini mold SC-62/TO-243 X X

3-pin small mini mold SC-70 X X

3-pin ultra super mini mold SC-75 X X

6-pin super mini mold SC-88 X

SC-95 SC-95 X X

SC-96 SC-96 X X

ESD Protection Diodes

2-pin SSP SC-76 X X

2-pin USM SC-78 X X

2-pin XSOF NA X

3-pin MM SC-59 X X

3-pin SSP SC-70 X

5-pin MM SC-74A X

5-pin SSP SC-88A X

5-pin XSOF NA X




General Package Name

Assembly Sites Including Subcontractors

Japan Malaysia China Korea

Low-Droput Voltage Regulators

TO-252 TO-252 X

MP-3 SC-64 X X

MP-3 (5-pin) SC-99 X

MP-3Z SC-63 X X

MP-3Z (5-pin) SC-98 X

MP-45G Isolated TO-220 X X

SC-62 SC-62/SOT-89 X

SC-74A SC-74A X

TO-126 (4-pin) NA X

Package Production Location (continued)


Ref

eren

ce In

form

atio

n

Lead-free Information

Lead-free Product Identification

A Outside and inside of the package contains no lead.

AT Outside and inside of the package contains no lead (pure Sn plate).

AZ Outside of package contains no lead.

Example PO format

2SA733 -T - / JM

Marking

• .Amarkingdot(maydifferdependingonproducttype)willbemadeonthemarkingsurfaceof the product.

TO-220AB TO-252 SOP8 Temperature profile

• ..Pb-free products need higher soldering temperature (260°C).

• ..GuidelinefollowsIR60-00-3andWS60-00-1

Label Printing

( INTP:) with -A, -AT, or AZ identication Blank area : Lead-free logomark indication

Pb-Free

Delivery specification

• . -A,-ATor-AZshallbeaddedintheproductitemnameand“CorrespondencetoEnvironment(Lead-Free Soldering Product)” indicated.

Indication of lead-free product


Recommended Soldering Conditions of Infrared Reflow (IR60-00-3)

The following are recommended soldering conditions for infrared reflow (including convection infrared/convection).

Maximum temperature (package’s surface temperature) 260°C or below Time at maximum temperature 10s or less Time of temperature higher that 220°C 60s or less Perheating time at 160 to 180°C 60 to 120s Maximumnumberofreflowprocesses 3times Maximumchlorinecontentofrosinflux(masspercentage) 0.2%orless

(Main heating)to 10s

to 60s

Time(s)Infrared Reflow Temperature Profile

60 to 120s(Preheating)

Pac

kage

’s s

urfa

ceTe

mpe

ratu

re (

C)

Recommended Soldering Conditions of Wave Soldering (WS60-00-1)

The following are recommended soldering conditions for wave soldering.

Maximum temperature (solder temperature) 260°C or below Time at maximum temperature 10s or less Preheating temperature (package’s surface temperature) 120°C or below Maximum number of flow processes 1 time Maximumchlorinecontentofrosinflux 0.2%(wt.)orless

Formorepackageinformation,visit: http://www.necel.com/pkg/en/index.html

ForacopyofthecurrentEnvironmentalReport,visit: http://www.necel.com/eco/en/report2007.html

The information in this document is current as of August 2008. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of any information in this document, or any other liability arising from the use of such information. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer’s equipment shall be done under the full responsibility of customer. NEC Electronics no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. NEC Electronics products are classified into the following three quality grades: “Standard”, “Special” and “Specific”. The “Specific” quality grade applies only to NEC Electronics products developed based on a customer-designated “quality assurance program” for a specific applica-tion. The recommended applications of NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. “Standard”: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. “Special”: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). “Specific”: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is “Standard” unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact NEC Electronics sales representative in advance to determine NEC Electronics ‘s willingness to support a given application.

(Notes)(1) “ NEC Electronics” as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries.

(2) “ NEC Electronics products” means any product developed or manufactured by or for NEC Electronics (as defined above).

© August 2008 NEC Electronics America, Inc. All rights reserved

Printed in U.S.A. on recycled paper using soy ink.

Document No. G18756EU3V0SG00

For further information, please contact:

NEC Electronics America, Inc.2880 Scott Blvd.Santa Clara, CA 95050-2554, U.S.A.Tel: 408-588-6000 or 800-366-9782www.am.necel.com

NEC Electronics (Europe) GmbHArcadiastr. 1040472 Düsseldorf, GermanyTel: +49-211-6503-0www.eu.necel.com

NEC Electronics Corporation1753 Shimonumabe, Nakahara-kuKawasaki, Kanagawa 211-8668, Tel: +044-435-5111www.necel.com

Japan

power management devices selection guide - renesas … · 2016-05-16 · power management devices...

Documents