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GaN Systems – Confidential – 1
GSDN001Double Pulse Test Results for the GS-065-0xx-1-L PDFNs
December 2018
GaN Systems – Confidential – 2
Introduction
PURPOSEThe Double Pulse Test (DPT) is used to characterize the turn-onand turn-off characteristics of switching power transistors.
CONTENTThis document provides the following information• An overview of the DPT set up • DPT results for GaN Systems’ PDFN E-HEMTS
• GS-065-004-1-L• GS-065-008-1-L • GS-065-011-1-L
GaN Systems – Confidential – 3
Double Pulse Test Overview
GaN Systems – Confidential – 4
GS-065-004-1-L: Double Pulse Test at 3.5A
400V DPT at IL= 3.5A
VGS
VDS
IIND
400V
VGS
VDS
IDS
Turn-on
VGS
VDS
IDS
Turn-off
400V
3.5A3.5A
6V6V
GS-065-004-1-L
Parameter Value
VDS 650 V
ID 3.5 A
RDS(on) 500 mΩ
GaN Systems – Confidential – 5
GS-065-008-1-L: Double Pulse Test at 8A
400V DPT at IL = 8A
VGS
VDS
IIND
VGS
VDS
IDS
VGS
VDS
IDS
Turn-on Turn-off
400V400V
8A
8A
6V6V
GS-065-008-1-L
Parameter Value
VDS 650 V
ID 8 A
RDS(on) 225 mΩ
GaN Systems – Confidential – 6
GS-065-011-1-L: Double Pulse Test at 11A
400V DPT at IL = 11A
VGS
VDS
IIND
VGS
VDS
IDS
VGS
VDS
IDS
Turn-on Turn-off
400V
400V
8A8A
6V6V
GS-065-011-1-L
Parameter Value
VDS 650 V
ID 11 A
RDS(on) 125 mΩ
GaN Systems – Confidential – 7
Summary
The DPT results were provided for GaN Systems’ GS-065-004-1-L, GS-065-008-1-L and GS-065-011-1-L E-HEMTs.
To contact GaN Systems for additional product and application support, please visit our website at https://gansystems.com/contact/.