Presenter Information:Wallace ScottMilitary & Space Products, Texas Instruments6412 Highway 75 South, MS 860Sherman, Texas 75090, USAPhone (903)-868-6448 Fax (903)-868-6245w-scott@ti.com

Heavy Ion Induced Single Event Effectson a 32-Bit, Floating-Point

Digital Signal Processor

W.Scott, R.Joshi, R.Daniels, T.Linnebur, I.Khan, K.Settle (Texas Instruments), Dr. M.Shoga (Science Applications International Corporation - SAIC),

Dr. M.Gauthier (ICS Radiation Technologies, Inc.)

The Single Event Effects (SEE) response of SMV320C6701, a 32-bit, floating-point digital signal processor (DSP) from Texas Instruments was tested with heavy ions.

The processor was tested for Single Event Latch-up (SEL) and Single Event Upsets (SEU) at room and high temperature. An innovative test methodology and test flow developed for evaluating the SEU response of different functional blocks of the DSP are discussed. The SEU response of various functional blocks of the DSP at different (Linear Energy Transfer) LETs is also presented.

Finally, based on the SEE response of the DSP, its potential use in different spacecraft orbits is described.

Abstract

Test Device - SMV320C6701GLPW14

Advanced VelociTITM

very-long-instruction-word (VLIW) architecture

Up to 1120 MIPS and 840 MFLOPS at 140 MHz 1 Mbit On-Chip SRAM for

fast program/data access 2 Multi-Channel Buffered

Serial Ports (McBSPs) provide glueless connect to codecs & framers, full duplex operation, and support SPI and ST-Bus

-55°C to 125°C Tcase 429-pin CBGA package

C6701 CPUDMAController

Data Memory64 KByte

Program Memory64 KByte

EMIF

McBSP 1

Timer 1

Timer 0

McBSP 0

Host Port Interface

16

32

Test Device – Key Parameters

Design Features

Process FeaturesLibrary

featuresCore Vdd 1.8V Starting Substrate

(Baseline for Class-V)

EPI (3.5µm)

Metal Levels

5

IO Vdd 3.3V STI Depth 5000A Flip Chip Yes

Core Lpoly 0.18µm PLL Yes

Core tox 40A

IO Lpoly 0.45µm

IO tox 80A

Test Details

Test Location: Texas A&M University Cyclotron Facility (TAMU-CF), College Station, Texas, USA

Website: http://cycltron.tamu.edu

Test Date: May 18, 2004

Ions Incident Angle

LET eff MeV/mg/cm²

#Units Test Temperature

Ar 0° 6.24 1 25°C

Ar 45° 9.16 2 25°C

Kr 0° 23.6 2 25°C

Kr 45° 35.4 2 25°C

Xe 0° 47.1 1 25°C

Xe 45° 71.1 1 25°C

Xe 45° 71.1 3 125°C

Xe45° + #2

Degrader89 3 125°C

Heavy Ion Beam Parameters

SEE Test System• Monitoring and Recording equipment

Texas Instruments 256-pin Automatic Test Equipment (ATE)

Monitor Supply currents (I/Os, Core, and PLL)

Automatic power-down when supply currents exceed user programmed limits

Event-Driven, exhaustive Functional and SCAN testing Translates to ~5-10 MHz test frequency

High-Speed (167 MHz) memory testing via internal-BIST (Built-In Self-Test)

Log parameters and fail counts

ContinuityContinuity Open PinsOpen Pins Open SupplyOpen Supply Short PinsShort Pins Short SupplyShort Supply

FunctionalFunctional Boot LoadingBoot Loading CacheCache

FunctionalFunctional Data and Program MemoryData and Program Memory

FunctionalFunctional Data word sizes, DMA, EMIFData word sizes, DMA, EMIF Multi-Channel Serial PortsMulti-Channel Serial Ports Power-down ModePower-down Mode PLLPLL

FunctionalFunctional ATPG (JTAG)ATPG (JTAG) Memory - BISTMemory - BIST

VDD-CORE VDD-I/O VDD-PLL

1.4V 2.35V 2.35V

2.05V 3.45V 3.35V

1.6V 3.14V 3.14V

2.0V 3.47V 3.47V

1.5V 3.63V 3.63V

SEE Test Flow

Continuity• • •

Supply Shorts

Continuity

•Functional Verification•Monitor Supply Currents

SEE Test Flow

NO SELNO SEL

SEL DetectionSEL Detection SEU DetectionSEU Detection

SEU/SEFI Rate Estimation

• The environment models in CREME96 were used Solar min & Solar Max for background ratesOctober 1989 Large Solar Flare for worst 5-minute,

worst day, worst week event rates

• A shielding of 150 mils was assumed

• All heavy ion rates are for GEO orbit

EMIF, McBSP, DMA, Power Down Logic, Data Access Controller, Program/Cache Memory, Data Memory, Boot Modes

Tests: 81 Vectors: ~1.3 Million Upset Rate: 4.0E-03 upsets/day or ~250 days/upset

SEU Characteristics

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

0 20 40 60 80

Eff. LET (MeV/mg/cm2)

Cro

ss S

ecti

on

(cm

2)

test data

Weibul Fit

Program/Cache and Data Memory Program Access/Cache Controller and Data Access Controller

Tests: 25 Vectors: ~97k Upset Rate: 2.88E-04 upsets/day or ~3472 days/upset

SEU Characteristics

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

0 20 40 60 80

Eff. LET (MeV/mg/cm2)

Cro

ss S

ecti

on

(cm

2)

test data

Weibul Fit

Program/Cache Memory verification using BIST (167 MHz) Upset Rate: 3.47E-05 upsets/day or ~28837 days/upset

SEU Characteristics

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

0 20 40 60 80

Eff. LET (MeV/mg/cm2)

Cro

ss S

ecti

on

(cm

2)

test data

Weibul Fit

SEU Characteristics

Data Memory verification using BIST (167 MHz) Upset Rate: 1.75E-04 upsets/day or ~5709 days/upset

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

0 20 40 60 80

Eff. LET (MeV/mg/cm2)

Cro

ss S

ecti

on

(cm

2)

test data

Weibul Fit

SEU CharacteristicsCPU

Tests: 49 Vectors: ~32 MillionUpset Rate: 6.24E-04 upsets/day or ~1603 days/upset

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

0 20 40 60 80

Eff. LET

Cro

ss S

ecti

on

(cm

2)

test data

Weibul Fit

Summary and Conclusion

• SMV3206701 is not susceptible to SEL up to tested LET of 89 MeV-cm2/mg and max temperature of 125°C

• The DSP has an estimated worst-case SEU rate of 4.0E-03 upsets/device-day or ~250 days per upset (GEO orbit)

• The DSP did not show significant sensitivity to different bias voltages and temperatures

Summary and Conclusion (Cont.)

• The total gamma dose hardness level is 100 krad(Si)

• SMV3206701 is suitable for Space and for all spacecraft orbits (GEO, LEO, etc.)

• Proton upset rate estimation applicable for LEO orbits is underway