product/process - mouser electronics · product/process ® change notification. ... lack of...

PCN IPG-PWR/14/8674Dated 02 Sep 2014

TO-247 and Max247 packages Back-End Capacity Extension

- Nantong Fujitsu Microelectronics (China)

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PRODUCT/PROCESSCHANGE NOTIFICATION®

PCN IPG-PWR/14/8674 - Dated 02 Sep 2014

Table 1. Change Implementation ScheduleForecasted implementation date for 26-Aug-2014 change

Forecasted availability date of samples 26-Aug-2014 for customer

Forecasted date for STMicroelectronicschange Qualification Plan results availability 26-Aug-2014

Estimated date of changed product first 02-Dec-2014 shipment

Table 2. Change IdentificationProduct Identification see attached list (Product Family/Commercial Product)

Type of change Package assembly location change, Testing location change

Reason for change Improve service to Customers

Description of the change Following the continuous improvement of our service and in order toincrease the productivity, this document is announcing that TO-247and Max247 products, listed in this PCN, will be also produced inSubcontractor Nantong Fujitsu Microelectronics (China). NantongFujitsu Microelectronics subcontractor is our preferred partner forpower packages since long time. Devices used for qualification areavailable as samples. Max247 package will be actually produced onlyin Nantong Fujitsu Microelectronics (China), so for this package,this PCN is intended as Back-End Capacity relocation.

Change Product Identification "GF" marked on the package and box label

Manufacturing Location(s)

® 2/21

PCN IPG-PWR/14/8674 - Dated 02 Sep 2014

DOCUMENT APPROVAL

Name Function

Mottese, Anna Marketing Manager

Aleo, Mario-Antonio Product Manager

Falcone, Giuseppe Q.A. Manager

® 4/21

5

WHAT:

Following the continuous improvement of our service and in order to increase the productivity,

this document is announcing that TO-247 and Max247™ products, listed in this PCN, will be

also produced in Subcontractor Nantong Fujitsu Microelectronics (China).

Nantong Fujitsu Microelectronics subcontractor is our preferred partner for power packages

since long time. Devices used for qualification are available as samples.

Max247™ package will be actually produced only in Nantong Fujitsu Microelectronics (China),

so for this package, this PCN is intended as Back-End Capacity relocation.

For the complete list of the part numbers affected by these changes, please refer to the attached

Products List.

Samples of the test vehicle are available right now upon request for immediate customer qualifica-

tion, while the full availability of products will be granted from wk 35 2014 onwards. Any other

sample request will be granted upon request

Product Family Test Vehicle Package 1st Shipment

Power MOSFET

STW18NM60N

STW43NM60ND

STW88N65M5

TO-247 Wk 48

STY145N65M5

STY60NM50

STY80NM60N

Max247™ Wk 48

Power Bipolar TIP35C TO-247 Wk 48

IGBT STGY40NC60VD Max247™ Wk 48

WHY:

To improve service to ST Customers and standardize manufacturing processes for the power pack-

ages typology.

HOW:

By adding Nantong Fujitsu Microelectronics as production site for products housed in:

TO-247 and Max247™.

The changed here reported will not affect the electrical, dimensional and thermal parameters keeping

unchanged all information reported on the relevant product’s datasheets.

Packing and delivery quantities are the same as per STMicroelectronics STD for these packages.

6

Qualification program and results:

The qualification program consists mainly of comparative electrical characterization and

reliability tests. Please refer to Appendix 1 for all the details.

WHEN:

Production start and first shipments will occur as per the scheduling indicated in the tables below.

Marking and traceability:

Unless otherwise stated by customer specific requirement, the traceability of the parts produced in

Nantong Fujitsu Microelectronics will be ensured by the Q.A. number and plant code identification “GF”

marked on the package, as illustrated in the below picture:

Package marking example

Lack of acknowledgement of the PCN within 30 days will constitute acceptance of the change.

After acknowledgement, lack of additional response within the 90 day period will constitute acceptance

of the change (Jedec Standard No. 46-C).

In any case, first shipments may start earlier with customer’s written agreement.

IPG (Industrial and Power Group) PTD (Power Transistor Division)

Quality and Reliability Rel 10-14

Page 1/14

INTERIM Reliability Report TO-247 and Max247™ packages Back-End Capacity Extension - Nantong Fujitsu Microelectronics (China)

General Information

Product Lines: M5F9 – M264 – 2F6B – MD5N – 2M6N - BA21 – IV6B+E61L – M5FR

Product Families: Power MOSFET (M5F9 – M264 – 2F6B – MD5N – 2M6N – M5FR) Power BIPOLAR (BA21) IGBT (IV6B+E61L)

P/Ns: STW88N65M5 (M5F9) STW18NM60N (M264) STW43NM60ND (2F6B) STY60NM50 (MD5N) STY80NM60N (2M6N) TIP35C (BA21) STGY40NC60VD (IV6B+E61L) STY145N65M5 (M5FR)

Product Group: IPG

Product division: Power Transistor Division

Package: TO-247 (M5F9 – M264 –2F6B– BA21) MAX247 (MD5N – 2M6N - IV6B + E61L)

Silicon Process techn.: MDmesh™ V Power MOSFET MDmesh™ II Power MOSFET FDmesh™ II Power MOSFET Power BIPOLAR IGBT

Locations Wafer Diffusion Plants:

Ang Mo Kio (Singapore) Catania (Italy)

EWS Plants:

Ang Mo Kio (Singapore) Catania (Italy)

Assembly plant: Nantong Fujitsu Microelectronics (China)

Reliability Lab: IPG-PTD Catania Reliability Lab.

DOCUMENT INFORMATION

Version Date Pages Prepared by Approved by Comment 1.0 August 2014 14 A. Settinieri C. Cappello First issue: Interim results and

Plan

Note: This report is a summary of the reliability trials performed in good faith by STMicroelectronics in order to evaluate the potential reliability risks during the product life using a set of defined test methods. This report does not imply for STMicroelectronics expressly or implicitly any contractual obligations other than as set forth in STMicroelectronics general terms and conditions of Sale. This report and its contents shall not be disclosed to a third party without previous written agreement from STMicroelectronics.



Page 2/14

TABLE OF CONTENTS 1 APPLICABLE AND REFERENCE DOCUMENTS ............................................................................................ 3

2 GLOSSARY ........................................................................................................................................................ 3

3 RELIABILITY EVALUATION OVERVIEW ......................................................................................................... 3

3.1 OBJECTIVES ............................................................................................................................................... 3

3.2 INTERIM CONCLUSION .............................................................................................................................. 3

4 DEVICE CHARACTERISTICS ........................................................................................................................... 4

4.1 DEVICE DESCRIPTION .................................................................................................................................. 4

4.2 CONSTRUCTION NOTE ................................................................................................................................. 4

5 TESTS RESULTS SUMMARY ......................................................................................................................... 12

5.1 TEST VEHICLE ........................................................................................................................................... 12

5.2 RELIABILITY TEST PLAN SUMMARY: INTERIM RESULTS AND PLAN ............................................................... 12

6 ANNEXES 6.0................................................................................................................................................... 14

6.1TESTS DESCRIPTION ...................................................................................................................................... 14



Page 3/14

1 APPLICABLE AND REFERENCE DOCUMENTS

Document reference Short description JESD47 Stress-Test-Driven Qualification of Integrated Circuits

2 GLOSSARY DUT Device Under Test SS Sample Size HF Halogen Free

3 RELIABILITY EVALUATION OVERVIEW

3.1 Objectives Capacity expansion activities of the TO-247 and Max247™ packages, graded Molding Compound manufactured in Nantong Fujitsu Microelectronics (NFME) Subcontractor factory located in China.

3.2 INTERIM Conclusion Preliminary qualification Plan requirements have been fulfilled without exception. It is stressed that reliability tests have shown that the devices behave correctly against environmental tests (no failure). Moreover, the stability of electrical parameters during the accelerated tests demonstrates the ruggedness of the products and safe operation, which is consequently expected during their lifetime.



Page 4/14

4 DEVICE CHARACTERISTICS

4.1 Device description N-channel Power MOSFET. Power Bipolar. IGBT.

4.2 Construction note

D.U.T.: STW88N65M5 LINE: M5F9 PACKAGE: TO-247

Wafer/Die fab. Information Wafer fab manufacturing location Catania (Italy) Technology Power MOSFET MDmesh V Technology Die finishing back side Ti/NiV/Ag Die size 10410 x 6810 µm2 Metal AlCu/Ti/TiNi Passivation type Nitride

Wafer Testing (EWS) information

Electrical testing manufacturing location Catania (Italy) Test program WPIS

Assembly information

Assembly site Nantong Fujitsu Microelectronics (China) Package description TO-247

Molding compound HF Epoxy Resin Frame material Raw Copper

Die attach process Soft Solder Die attach material Pb/Sn/Ag

Wire bonding process Ultrasonic Wires bonding materials 5 mils Al/Mg Gate – Ribbon 60x8 mils Al Source Lead finishing/bump solder material Pure Tin

Final testing information

Testing location Nantong Fujitsu Microelectronics (China) Tester IPTest



Page 5/14

D.U.T.: STW18NM60N LINE: M264 PACKAGE: TO-247

Wafer/Die fab. Information Wafer fab manufacturing location Ang Mo Kio (Singapore) Technology Power MOSFET MDmesh II Technology Die finishing back side Ti/Ni/Ag Die size 4400 x 3200 µm2 Metal Al/Si Passivation type Nitride


Electrical testing manufacturing location Ang Mo Kio (Singapore) Test program WPIS





Wire bonding process Ultrasonic Wires bonding materials 5 mils Al/Mg Gate – 10 mils Al Source Lead finishing/bump solder material Pure Tin





Page 6/14

D.U.T.: STW43NM60ND LINE: 2F6B PACKAGE: TO-247

Wafer/Die fab. Information Wafer fab manufacturing location Catania (Italy) Technology Power MOSFET MDmesh II Technology Die finishing back side Ti/Ni/Ag Die size 8800 x 5760 µm2 Metal Al/Si Passivation type Nitride







Wire bonding process Ultrasonic Wires bonding materials 5 mils Al/Mg Gate – Ribbon 40x 6 mils Al Source Lead finishing/bump solder material Pure Tin





Page 7/14

D.U.T.: TIP35C LINE: BA21 PACKAGE: TO-247

Wafer/Die fab. Information Wafer fab manufacturing location Ang Mo Kio (Singapore) Technology Power Bipolar Die finishing back side Ti/Ni/Ag Die size 4030 x 3680 µm2 Metal Al/Si Passivation type PSG







Wire bonding process Ultrasonic Wires bonding materials 7 mils Al Base – 15 mils Al Emitter Lead finishing/bump solder material Pure Tin





Page 8/14

D.U.T.: STY60NM50 LINE: MD5N PACKAGE: Max247TM

Wafer/Die fab. Information Wafer fab manufacturing location Ang Mo Kio (Singapore) Technology Power MOSFET MDmesh II Technology Die finishing back side Ti/Ni/Ag Die size 9610 x 12640 µm2 Metal Al/Si Passivation type Nitride




Assembly site Nantong Fujitsu Microelectronics (China) Package description Max247TM








Page 9/14

D.U.T.: STGY40NC60VD LINE: IV6B + E61L(Diode) PACKAGE: Max247TM

Wafer/Die fab. Information Wafer fab manufacturing location Ang Mo Kio (Singapore) Technology Irradiated IGBT Die finishing back side Cr/Ni/Ag Die size 6670 x 7610 µm2 Metal Al/Si Passivation type Nitride












Page 10/14

D.U.T.: STY80NM60N LINE: 2M6N PACKAGE: Max247TM

Wafer/Die fab. Information Wafer fab manufacturing location Catania (Italy) Technology Power MOSFET MDmesh II Technology Die finishing back side Ti/Ni/Ag Die size 9640 x 12780 µm2 Metal Al/Si Passivation type Nitride







Wire bonding process Ultrasonic Wires bonding materials 5 mils Al/Mg Gate – Ribbon 80x10 mils Al Source Lead finishing/bump solder material Pure Tin





Page 11/14

D.U.T.: STY145N65M5 LINE: M5FR PACKAGE: Max247TM

Wafer/Die fab. Information Wafer fab manufacturing location Catania (Italy) Technology Power MOSFET MDmesh V Technology Die finishing back side Ti/Ni/Ag Die size 10180 x 13770 µm2 Metal AlCu/Ti/TiNi Passivation type Nitride












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5 TESTS RESULTS SUMMARY

5.1 Test vehicle

Lot # Process/ Package Product Line Package Comments

1 STW88N65M5 M5F9

TO-247

Power MOSFET 2 STW18NM60N M264 Power MOSFET 3 STW43NM60ND 2F6B Power MOSFET 4 TIP35C BA21 Power BIPOLAR 5 STY60NM50 MD5N

Max247TM

Power MOSFET 6 STGY40NC60VD IV6B + E61L(Diode) IGBT + Diode 7 STY80NM60N 2M6N Power MOSFET 8 STY145N65M5 M5FR Power MOSFET

5.2 Reliability test plan summary: INTERIM Results and Plan

Lot. 1 - D.U.T.: STW88N65M5 LINE: M5F9 PACKAGE: TO-247 Lot. 2 - D.U.T.: STW18NM60N LINE: M264 PACKAGE: TO-247 Lot. 3 - D.U.T.: STW43NM60ND LINE: 2F6B PACKAGE: TO-247 Lot. 4 - D.U.T.: TIP35C LINE: BA21 PACKAGE: TO-247

Test Std ref. Conditions SS Steps Failure/SS

Lot 1 Lot 2 Lot 3 Lot 4 Die Oriented Tests

HTRB JESD22 A-108

T.A.=150°C Vdss=520V (M5F9) Vdss=480V (M264) Vdss=480V (2F6B) Vdss=80V (BA21)

45

168 H 0/45 0/45 0/45 0/45

500 H 0/45 0/45 0/45 0/45

1000 H Wk36 Wk36 Wk36 Wk36

HTGB JESD22 A-108

TA = 150°C Vgss= 30V 45

168 H 0/45 0/45 0/45 Not

applicable 500 H 0/45 0/45 0/45 1000 H Wk36 Wk36 Wk36

HTSL JESD22 A-103 TA = 150°C 45

168 H 0/45 0/45 0/45 0/45 500 H 0/45 0/45 0/45 0/45

1000 H Wk36 Wk36 Wk36 Wk36 Package Oriented Tests

H3TRB JESD22 A-101

Ta=85°C Rh=85%, Vdss=100V

25 168 H 0/25 0/25 0/25 0/25 500 H 0/25 0/25 0/25 0/25

1000 H Wk36 Wk36 Wk36 Wk36

TC JESD22 A-104

TA=-65°C TO 150°C (1 HOUR/CYCLE) 25

100 cy 0/25 0/25 0/25 0/25 300 cy 0/25 0/25 0/25 0/25 500 cy Wk36 Wk36 Wk36 Wk36

TF/IOL Mil-STD 750D Method 1037 ∆Tc=+105°C 25

5K cy 0/25 0/25 0/25 0/25

10K cy 0/25 0/25 0/25 0/25

AC JESD22 A-102 TA=121°C – PA=2 ATM 25 96 H running running running running

Lot. 5 - D.U.T.: STY60NM50 LINE: MD5N PACKAGE: Max247TM



Page 13/14

Lot. 6 - D.U.T.: STGY40NC60VD LINE: IV6B + E61L PACKAGE: Max247TM Lot. 7 - D.U.T.: STY80NM60N LINE: 2M6N PACKAGE: Max247TM Lot. 8 - D.U.T.: STY145N65M5 LINE: M5FR PACKAGE: Max247TM

Test Std ref. Conditions SS Steps Failure/SS

Lot 5 Lot 6 Lot 7 Lot 8 Die Oriented Tests

HTRB JESD22 A-108

T.A.=150°C Vdss=400V (MD5N) Vdss=480V (IV6B) Vdss=480V (2M6N) Vdss=480V (M5FR)

45

168 H 0/45 0/45 0/45

500 H 0/45 0/45 0/45

1000 H Wk36 Wk36 Wk36 Wk36

HTGB JESD22 A-108

TA = 150°C Vgss= 30V 45

168 H 0/45 0/45 0/45 0/45 500 H 0/45 0/45 0/45 0/45

1000 H Wk36 Wk36 Wk36 Wk36

HTSL JESD22 A-103 TA = 150°C 45

168 H 0/45 0/45 0/45 0/45 500 H 0/45 0/45 0/45 0/45

1000 H Wk36 Wk36 Wk36 Wk36 Package Oriented Tests

H3TRB JESD22 A-101

Ta=85°C Rh=85%, Vdss=100V 25

168 H 0/25 0/25 0/25 0/25 500 H 0/25 0/25 0/25 0/25

1000 H Wk36 Wk36 Wk36 Wk36

TC JESD22 A-104

TA=-65°C TO 150°C (1 HOUR/CYCLE) 25

100 cy 0/25 0/25 0/25 0/25 300 cy 0/25 0/25 0/25 0/25 500 cy Wk36 Wk36 Wk36 Wk36

TF/IOL Mil-STD 750D Method 1037 ∆Tc=+105°C 25

5K cy 0/25 0/25 0/25 0/25

10K cy 0/25 0/25 0/25 0/25

AC JESD22 A-102 TA=121°C – PA=2 ATM 25 96 H 0/25 0/25 0/25 0/25



Page 14/14

6 ANNEXES 6.0

6.1Tests Description

Test name Description Purpose

Die Oriented Tests

HTRB High Temperature

Reverse Bias

HTGB High Temperature

Forward (Gate) Bias

The device is stressed in static configuration, trying to satisfy as much as possible the following conditions: • low power dissipation; • max. supply voltage compatible with

diffusion process and internal circuitry limitations;

To determine the effects of bias conditions and temperature on solid state devices over time. It simulates the devices’ operating condition in an accelerated way. To maximize the electrical field across either reverse-biased junctions or dielectric layers, in order to investigate the failure modes linked to mobile contamination, oxide ageing, layout sensitivity to surface effects.

HTSL High Temperature

Storage Life

The device is stored in unbiased condition at the max. temperature allowed by the package materials, sometimes higher than the max. operative temperature.

To investigate the failure mechanisms activated by high temperature, typically wire-bonds solder joint ageing, data retention faults, metal stress-voiding.

Package Oriented Tests AC

Auto Clave (Pressure Pot)

The device is stored in saturated steam, at fixed and controlled conditions of pressure and temperature.

To investigate corrosion phenomena affecting die or package materials, related to chemical contamination and package hermeticity.

TC Temperature

Cycling

The device is submitted to cycled temperature excursions, between a hot and a cold chamber in air atmosphere.

To investigate failure modes related to the thermo-mechanical stress induced by the different thermal expansion of the materials interacting in the die-package system. Typical failure modes are linked to metal displacement, dielectric cracking, molding compound delamination, wire-bonds failure, die-attach layer degradation.

TF / IOL Thermal Fatigue /

Intermittent Operating Life

The device is submitted to cycled temperature excursions generated by power cycles (ON/OFF) at T ambient.

To investigate failure modes related to the thermo-mechanical stress induced by the different thermal expansion of the materials interacting in the die-package system. Typical failure modes are linked to metal displacement, dielectric cracking, molding compound delamination, wire-bonds failure, die-attach layer degradation.

H3TRB Temperature Humidity Bias

The device is biased in static configuration minimizing its internal power dissipation, and stored at controlled conditions of ambient temperature and relative humidity.

To evaluate the package moisture resistance with electrical field applied, both electrolytic and galvanic corrosion are put in evidence.

Public Products List®

PCN Title : TO-247 and Max247 packages Back-End Capacity Extension - Nantong Fujitsu Microelectronics (China) PCN Reference : IPG-PWR/14/8674 PCN Created on : 27-AUG-2014

Subject : Public Products List

Dear Customer,

Please find below the Standard Public Products List impacted by the change:

ST COMMERCIAL PRODUCT

2STW100 2STW200 BU508AW BUF420AW BUT70W BUTW92 BUV48A STGW15H120DF2 STGW15H120F2 STGW19NC60HD STGW19NC60W STGW20H60DF STGW20IH125DF STGW20NC60V STGW20NC60VD STGW20V60DF STGW20V60F STGW25H120DF2 STGW25H120F2 STGW28IH125DF STGW30H60DF STGW30H65FB STGW30NC120HD STGW30NC60KD STGW30NC60WD STGW30V60DF STGW30V60F STGW35HF60W STGW35HF60WD STGW35HF60WDI STGW35NB60SD STGW39NC60VD STGW40H120DF2 STGW40H120F2 STGW40H60DLFB STGW40H65DFB STGW40H65FB STGW40N120KD STGW40NC60KD STGW40V60DF STGW40V60DLF STGW40V60F STGW45HF60WD STGW45HF60WDI STGW50H60DF STGW50HF60S STGW50HF60SD STGW50HF65SD STGW60H60DLFB STGW60H65DF STGW60H65DFB STGW60H65DRF STGW60H65F STGW60H65FB STGW60V60DF STGW60V60F STGW80H65DFB STGW80V60DF STGY40NC60VD STGY50NC60WD STGY80H65DFB STW10N95K5 STW10NK60Z STW10NK80Z STW11NK100Z STW11NK90Z STW11NM80 STW120NF10 STW12N120K5 STW12NK80Z STW12NK90Z STW12NK95Z STW13N60M2 STW13N95K3 STW13NK100Z STW13NK60Z STW14NK50Z STW15N80K5 STW15N95K5 STW15NK50Z STW15NK90Z STW15NM60ND STW18N60M2 STW18N65M5 STW18NM60N STW18NM60ND STW18NM80 STW19NM50N STW20N65M5 STW20N95K5 STW20NK50Z STW20NM50FD STW20NM60 STW20NM60FD STW21N90K5 STW21NM60ND STW23N85K5 STW23NM50N STW24N60DM2 STW24N60M2 STW24NM60N STW25N80K5 STW25N95K3 STW25NM60ND STW26NM50

1/2

Public Products List®

PCN Title : TO-247 and Max247 packages Back-End Capacity Extension - Nantong Fujitsu Microelectronics (China) PCN Reference : IPG-PWR/14/8674 PCN Created on : 27-AUG-2014

Subject : Public Products List (Contd.)

ST COMMERCIAL PRODUCT

STW26NM60N STW26NM60ND STW28N60M2 STW28NM50N STW28NM60ND STW30N65M5 STW31N65M5 STW32NM50N STW33N60M2 STW34N65M5 STW34NM60N STW34NM60ND STW35N65M5 STW36N55M5 STW38N65M5 STW3N150 STW3N170 STW40N60M2 STW40NF20 STW42N65M5 STW43NM60N STW43NM60ND STW45N65M5 STW45NM50 STW45NM60 STW48NM60N STW4N150 STW52NK25Z STW54NM65ND STW55NM60ND STW56NM60N STW57N65M5 STW5NK100Z STW60NM50N STW62NM60N STW69N65M5 STW6N120K3 STW6N95K5 STW70N10F4 STW75NF20 STW77N65M5 STW7N95K3 STW7NK90Z STW88N65M5 STW8NK80Z STW9N150 STW9NK90Z STW9NK95Z STY100NM60N STY105NM50N STY112N65M5 STY130NF20D STY139N65M5 STY145N65M5 STY60NK30Z STY60NM50 STY60NM60 STY80NM60N TIP142 TIP147 TIP2955 TIP3055 TIP35C TIP35CW TIP36C TIP36CW

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