progress towards a long shaping-time readout for silicon strips

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Progress towards a Long Shaping-Time Readout for Silicon Strips Bruce Schumm SCIPP & UC Santa Cruz Cornell LC Workshop July 13-16, 2003

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Progress towards a Long Shaping-Time Readout for Silicon Strips. Bruce Schumm SCIPP & UC Santa Cruz Cornell LC Workshop July 13-16, 2003. The SD Tracker. Tracker Performance. SD Detector burdened by material in five tracking layers (1.5% X 0 per layer) at low and intermediate mo-mentum. - PowerPoint PPT Presentation

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Page 1: Progress towards a Long Shaping-Time Readout for Silicon Strips

Progress towards a Long Shaping-Time Readout for

Silicon Strips

Bruce SchummSCIPP & UC Santa CruzCornell LC Workshop

July 13-16, 2003

Page 2: Progress towards a Long Shaping-Time Readout for Silicon Strips

The SD Tracker

Page 3: Progress towards a Long Shaping-Time Readout for Silicon Strips

Tracker Performance

SD Detector burdened by material in five tracking layers (1.5% X0 per layer) at low and intermediate mo-mentum

Code: http://www.slac.stanford.edu/~schumm/lcdtrk.tar.gz

Page 4: Progress towards a Long Shaping-Time Readout for Silicon Strips

Idea: Noise vs. Shaping Time

Min-i for 300m Si is about 24,000 electrons

Shaping (s) Length (cm) Noise (e-)

1 100 2200

1 200 3950

3 100 1250

3 200 2200

10 100 1000

10 200 1850

Agilent 0.5 m CMOS process (qualified by GLAST)

Page 5: Progress towards a Long Shaping-Time Readout for Silicon Strips

The Gossamer TrackerIdeas:• Long ladders substantially limit electronics readout and associated support• Thin inner detector layers• Exploit duty cycle eliminate need for active cooling Competitive with gaseous

track-ing over full range of momentaAlso: forward region…

Page 6: Progress towards a Long Shaping-Time Readout for Silicon Strips

TPC Material Burden

Page 7: Progress towards a Long Shaping-Time Readout for Silicon Strips

Pursuing the Long-Shaping Idea

LOCAL GROUP

SCIPP/UCSC• Optimization of readout & sensors• Design & production of prototype ASIC• Development of prototype ladder; testing

Supported by 2-year, $95K grant from DOE Advanced Detector R&D Program

Page 8: Progress towards a Long Shaping-Time Readout for Silicon Strips

PRC MeetingDESY, Hamburg, May 7 and 8,

2003

SilC: an International R&D Collaboration to develop Si-

tracking technologies for the LC

Aurore Savoy-Navarro, LPNHE-Universités de Paris 6&7/IN2P3-CNRS, France

on behalf of the SiLC Collaboration

Page 9: Progress towards a Long Shaping-Time Readout for Silicon Strips

The SiLC CollaborationThe SiLC Collaboration

Brookhaven

Ann Arbor Wayne

Santa Cruz

Helsinki

Obninsk Karlsruhe

Paris

Prague Wien Geneve

Torino

Pisa

RomeBarcelonaValencia

Korean Universities

Seoul&Taegu

Tokyo

EuropeUSA

ASIASo far: 18 Institutes gathering over 90 people from Asia, Europe & USAMost of these teams are and/or have been collaborating.

Page 10: Progress towards a Long Shaping-Time Readout for Silicon Strips

The SCIPP/UCSC Effort

Faculty/Senior

Alex GrilloHartmut Sadrozinski

Bruce SchummAbe Seiden

Post-Doc

Gavin Nesom

(half-time LC postdoc from

1999 program)

Student

Christian Flacco

(will do BaBar thesis)

Engineer: Ned Spencer (on SCIPP base program)

Page 11: Progress towards a Long Shaping-Time Readout for Silicon Strips

SCIPP/UCSC Development Work

Characterize GLAST `cut-out’ detectors (8 channels with pitch of ~200 m) for prototype ladder

Detailed simulation of pulse development, electronics, and readout chain for optimization and to guide ASIC development (most of work so far)…

Page 12: Progress towards a Long Shaping-Time Readout for Silicon Strips

Pulse Development Simulation

Long Shaping-Time Limit: strip sees signal if and only if hole is col- lected onto strip (no electrostatic coupling to neighboring strips)Charge Deposition: Landau distribution (SSSimSide; Gerry Lynch LBNL) in ~20 independent layers through thickness of deviceGeometry: Variable strip pitch, sensor thickness, orientation (2 dimen-sions) and track impact parameter

Page 13: Progress towards a Long Shaping-Time Readout for Silicon Strips

Uncorrelated Sampling Check

Page 14: Progress towards a Long Shaping-Time Readout for Silicon Strips

Carrier Diffusion

)(21

exp),(0

2

ttDr

trPq

Hole diffusion distribution given by

Offest t0 reflects instantaneous expansion of hole clouddue to space-charge repulsion. Diffusion constant given by

hq qkT

D

Reference: E. Belau et al., NIM 214, p253 (1983)

sec65.00 nt

h = hole mobility

Page 15: Progress towards a Long Shaping-Time Readout for Silicon Strips

Other ConsiderationsLorentz Angle:

18 mrad per Tesla (holes)

Detector Noise:

From SPICE simulation, normalized to bench tests with GLAST electronics

Can Detector Operate with 167cm, 300 m thick Ladders?

• Pushing signal-to-noise limits• Large B-field spreads charge between strips• But no ballistic deficit (infinite shaping time)

Page 16: Progress towards a Long Shaping-Time Readout for Silicon Strips

Result: S/N for 167cm Ladder

At shaping time of 3s; 0.5 m process qualified by GLAST

Page 17: Progress towards a Long Shaping-Time Readout for Silicon Strips

Result: S/N for 132cm Ladder

At shaping time of 3s; 0.5 m process qualified by GLAST

132cm Ladder 300m Thick

Page 18: Progress towards a Long Shaping-Time Readout for Silicon Strips

Not Yet Considered

• Inter-Strip Capacitance (under study; typically ~5% pulse sharing between neighboring channels)

• Leakage Current (small for low-radiation environment)

• Threshold Variation (typically want some headroom for this!) But overall, 3 s operating point seems quite feasible proceed to ASIC design!

Page 19: Progress towards a Long Shaping-Time Readout for Silicon Strips

Analog Readout Scheme: Time-Over Threshold

(TOT)

i-min

thresh

e

e

nn

i-min

pulse

e

e

nn

r

TO

T/

/r

/te

etr

TOT given by differencebetween two solutions to

(RC-CR shaper)

Digitize with granularity /ndig

Page 20: Progress towards a Long Shaping-Time Readout for Silicon Strips

Why Time-Over-Threshold?

4

2

6

10

8

TO

T/

101 1000100

Signal/Threshold = (/r)-1

100 x min-i

With TOT analog readout:

Live-time for 100x dynamic range is about 9

With = 3 s, this leads to a live-time of about 30 s, and a duty cycle of about 1/250

Sufficient for power-cycling!

Page 21: Progress towards a Long Shaping-Time Readout for Silicon Strips

Single-Hit Resolution

Design performance assumes 7m single-hit resolution. What can we really expect?

• Implement nearest-neighbor clustering algorithm

• Digitize time-over-threshold response (0.1* more than adequate to avoid degradation)

• Explore use of second `readout threshold’ that is set lower than `triggering threshold’; major design implication

Page 22: Progress towards a Long Shaping-Time Readout for Silicon Strips

RMS

Gaussian Fit

RMS

Gaussian Fit

Readout Threshold (Fraction of min-i)

Trigger Threshold167cm Ladder

132cm Ladder

Resolution With and Without Second (Readout)

Threshold

Page 23: Progress towards a Long Shaping-Time Readout for Silicon Strips

Lifestyle Choices

Based on simulation results, ASIC design will incorporate:

• 3 s shaping-time for preamplifier

• Time-over-threshold analog treatment

• Dual-discriminator architecture

The design of this ASIC is now underway.

Page 24: Progress towards a Long Shaping-Time Readout for Silicon Strips

But Can It Track Charged Particles?

1 100.1

Energy (MeV)

z (cm)

Photon Distributions at R = 25 cmSee Upcoming Talks!

Page 25: Progress towards a Long Shaping-Time Readout for Silicon Strips

Current Activity

ASIC architecture established with pulse sim…

• ASIC design underway (chips in hand 1/1/04?)

• Further pulse sim studies (x-talk, leakage current, angled tracks, etc.

• Developing test stand (long ladder, readout, etc.)

Page 26: Progress towards a Long Shaping-Time Readout for Silicon Strips

Where Next?

We’ve just begun the process of fleshing out the design of this `Gossamer Tracker’

In the 3-year R&D window, SCIPP needs to:

• Design and submit prototype ASIC (chips in hand 1/1/04?)• Demonstrate ability to read out long ladders • Demonstrate resolution and dynamic range • Demonstrate passive cooling (data transmission is an issue!)• Mount testbeam effort to verify simulation studies, refine chip• Probably second submission and second round of testing