proton-electrotex · 2020. 11. 5. · 0,00001 0,00010 0,00100 0,01000 0,10000 1,00000 10,00000...
TRANSCRIPT
PROTON-ELECTROTEXRUSSIA
Electrically isolated base plateIndustrial standard package Simplified mechanical design, rapid assemblyPressure contact
Double Thyristor ModuleFor Phase ControlMTx-160-36-C1
Mean on-state current ITAV 160 A
Repetitive peak off-state voltage VDRM3000...3600 V
Repetitive peak reverse voltage VRRM
Turn-off time tq 400 s
VDRM, VRRM, V 3000 3200 3400 3600Voltage code 30 32 34 36Tj, C –40...+125
MT3 MT4 MT5
MT/D3 MT/D4 MT/D5 MD/T3 MD/T4 MD/T5All dimensions in millimeters (inches)
2020-Sep-28 v1.13 © Proton-Electrotex Data Sheet MTx-160-36-C1 page 1 of 12
MAXIMUM ALLOWABLE RATINGS
Symbols and parameters Units Values Test conditions
ON-STATE
ITAV Maximum allowable mean on-state current A
160169
Tc=88 C;Tc=85 C;180 half-sine wave; 50 Hz
ITRMS RMS on-state current A 251Tc=88 C;180 half-sine wave; 50 Hz
ITSM Surge on-state current kA
4.04.5
Tj=Tj max
Tj=25 C
180 half-sine wave; tp=10 ms; single pulse;VD=VR=0 V;Gate pulseIG=IFGM; VG=20 V; tGP=500 s; diG/dt=1 A/s
4.04.5
Tj=Tj max
Tj=25 C
180 half-sine wave; tp=8.3 ms; single pulse;VD=VR=0 V;Gate pulseIG=IFGM; VG=20 V; tGP=500 s; diG/dt=1 A/s
I2t Safety factor A2s.103
80100
Tj=Tj max
Tj=25 C
180 half-sine wave; tp=10 ms; single pulse;VD=VR=0 V;Gate pulseIG=IFGM; VG=20 V; tGP=500 s; diG/dt=1 A/s
6080
Tj=Tj max
Tj=25 C
180 half-sine wave; tp=8.3 ms; single pulse;VD=VR=0 V;Gate pulseIG=IFGM; VG=20 V; tGP=500 s; diG/dt=1 A/s
BLOCKING
VDRM, VRRMRepetitive peak off-state and Repetitive peak reverse voltages
V 3000...3600Tj min< Tj <Tj max;180 half-sine wave; 50 Hz;Gate open
VDSM, VRSMNon-repetitive peak off-state and Non-repetitive peak reverse voltages V 3100...3700
Tj min< Tj <Tj max;180 half-sine wave; single pulse; Gate open
VD, VRDirect off-state andDirect reverse voltages
V 0.6.VDRM
0.6.VRRM
Tj=Tj max;Gate open
TRIGGERINGIFGM Peak forward gate current A 6
Tj=Tj maxVRGM Peak reverse gate voltage V 5PG Gate power dissipation W 3 Tj=Tj max for DC gate currentSWITCHING
(diT/dt)crit
Critical rate of rise ofon-state currentnon-repetitive (f=1 Hz)
A/s 200Tj=Tj max; VD=0.67.VDRM; ITM=2 ITAV;Gate pulse IG=IFGM; VG=20 V; tGP=50 s; diG/dt=2 A/s
THERMALTstg Storage temperature C –40...+50Tj Operating junction temperature C –40...+125Tc op Operating temperature C –40...+125MECHANICALa Acceleration under vibration m/s2 50
2020-Sep-28 v1.13 © Proton-Electrotex Data Sheet MTx-160-36-C1 page 2 of 12
CHARACTERISTICS
Symbols and parameters Units Values Conditions
ON-STATEVTM Peak on-state voltage, max V 2.50 Tj=25 C; ITM= 785 AVT(TO) On-state threshold voltage, max V 1.20 Tj=Tj max;
0.5 ITAV < IT < 1.5 ITAVrT On-state slope resistance, max m 2.300
IL Latching current, max mA 700Tj=25 C; VD=12 V;Gate pulse IG=IFGM; VG=20 V; tGP=500 s; diG/dt=1 A/s
IH Holding current, max mA 300Tj=25 C;VD=12 V; Gate open
BLOCKING
IDRM, IRRMRepetitive peak off-state and Repetitive peak reverse currents, max
mA 502.50
Tj=Tj max
Tj= 25 C VD=VDRM; VR=VRRM
(dvD/dt)crit Critical rate of rise of off-state voltage1), min
V/s 1000Tj=Tj max;VD=0.67.VDRM; Gate open
TRIGGERING
VGT Gate trigger direct voltage, max V3.502.001.50
Tj= Tj min Tj=25 CTj= Tj max VD=12 V; ID=3 A;
Direct gate current
IGT Gate trigger direct current, max mA250150100
Tj= Tj min
Tj= 25 CTj= Tj max
VGD Gate non-trigger direct voltage, min V 0.25 Tj=Tj max; VD=0.67.VDRM;Direct gate currentIGD Gate non-trigger direct current, min mA 10.00
SWITCHING
tgd Delay time, max s 3.00
Tj=25 C; VD=1500 V; ITM=ITAV; di/dt=200 A/s;Gate pulse IG=2 A; VG=20 V; tGP=50 s; diG/dt=2 A/s
tq Turn-off time2), max s 400dvD/dt=50 V/s; Tj=Tj max; ITM=160 A;diR/dt=-10 A/s; VR=100V;VD=0.67 VDRM
Qrr Total recovered charge, max C 1050 Tj=Tj max; ITM=150 A;diR/dt=-5 A/s;VR=100 V
trr Reverse recovery time, max s 30Irr Reverse recovery current, max A 70THERMAL
Rthjc
Thermal resistance, junction to case
180 half-sine wave, 50 Hz
per module C/W 0.0550per arm C/W 0.1100
Rthch
Thermal resistance, case to heatsinkper module C/W 0.0200
per arm C/W 0.0400INSULATION
VISOL Insulation test voltage kV3.00 Sine wave, 50 Hz;
RMSt=60 sec
3.60 t=1 secMECHANICALM1 Mounting torque (M6)3) Nm 6.00 Tolerance 15%M2 Terminal connection torque (M8)3) Nm 9.00 Tolerance 15%m Weight, max g 860
2020-Sep-28 v1.13 © Proton-Electrotex Data Sheet MTx-160-36-C1 page 3 of 12
PART NUMBERING GUIDE NOTES
MT 3 - 160 - 36 - A2 H2 - C1 - N1 2 3 4 5 6 7 8
1. Thyristor module (MT) Thyristor – Diode module (MT/D) Diode – Thyristor module (MD/T)2. Circuit Schematic3. Average On-state Current, A4. Voltage Code5. Critical rate of rise of off-state voltage6. Group of turn-off time (dvD/dt=50 V/s)7. Package Type (M.C1)8. Ambient Conditions: N – Normal
1) Critical rate of rise of off-state voltageSymbol of group A2(dvD/dt)crit, V/s 1000
2)Turn-off time (dvD/dt=50 V/s)Symbol of group H2
tq, s 400
3) The screws must be lubricated
UL certified file-No. Е255404
The information contained herein is confidential and protected by Copyright. In the interest of product improvement, Proton-Electrotex reserves the right to change data sheet without notice.
2020-Sep-28 v1.13 © Proton-Electrotex Data Sheet MTx-160-36-C1 page 4 of 12
1 1,2 1,4 1,6 1,8 2 2,2 2,4 2,6 2,8 30
100
200
300
400
500
600
700
800
On
— s
tate
cur
rent
- I
TM, A
On — state voltage - VTM
, V
MTx
-160
-C1,
13-
Nov
-201
9
25 °C 125 °C
Fig 1 – On-state characteristics of Limit device
Analytical function for On-state characteristic:
TTTT iDiCiBAV )1ln(
Coefficients for max curvesTj = 25oC Tj = Tj max
A 1.0126910 1.0794415B 0.0016636 0.0020860C 0.0038420 0.0062181D 0.0066694 0.0086245
On-state characteristic model (see Fig. 1)
2020-Sep-28 v1.13 © Proton-Electrotex Data Sheet MTx-160-36-C1 page 5 of 12
0,00001 0,00010 0,00100 0,01000 0,10000 1,00000 10,00000 100,000000,00001
0,00010
0,00100
0,01000
0,10000
1,00000
Per arm: 0.11 K/W
Time — t, s
MTx
-160
-C1,
13-
Nov
-201
9
Tran
sien
t th
erm
al im
peda
nce
— Z
thjc, K
/W
Fig 2 – Transient thermal impedance Zthjc vs. time t
Analytical function for Transient thermal impedance junction to case Zthjc for DC:
n
i
t
ithjcieRZ
1
1
Where i = 1 to n, n is the number of terms in the series.
t = Duration of heating pulse in seconds.
Zthjc = Thermal resistance at time t.
Ri = Amplitude of pth term.
i = Time constatnt of rth term.
i 1 2 3 4 5 6Ri, K/W 0.0808 0.007806 0.02226 -0.007688 0.00471 0.00217i, s 2.801 1.283 0.3281 0.09408 0.0572 0.002255
Transient thermal impedance junction to case Zthjc model (see Fig. 2)
2020-Sep-28 v1.13 © Proton-Electrotex Data Sheet MTx-160-36-C1 page 6 of 12
Fig 3 – Gate characteristics – Trigger limits
Fig 4 - Gate characteristics – Power curves
2020-Sep-28 v1.13 © Proton-Electrotex Data Sheet MTx-160-36-C1 page 7 of 12
1 10 100100
1000
10000
Commutation rate - di/dt, A/μs
Reco
vere
d ch
arge
- Q
rr-i,
μC
Tj = 125 °C
ITM
= 150 A
MTx
-160
-C1,
13-
Nov
-201
9
Fig 5 – Maximum recovered charge Qrr-i (integral) vs. commutation rate diR/dt
1 10 100100
1000
10000
Commutation rate - di/dt, A/μs
Reco
vere
d ch
arge
- Q
rr, μ
C
MTx
-160
-C1,
13-
Nov
-201
9 Tj = 125 °C
ITM
= 150 A
Fig 6 – Maximum recovered charge Qrr vs. commutation rate diR/dt (25% chord)
2020-Sep-28 v1.13 © Proton-Electrotex Data Sheet MTx-160-36-C1 page 8 of 12
1 10 10010
100
1000
Commutation rate - di/dt, A/μs
Reve
rse
reco
very
cur
rent
- I
rr, A
MTx
-160
-C1,
13-
Nov
-201
9 Tj = 125 °C
ITM
= 150 A
Fig 7 – Maximum reverse recovery current Irr vs. commutation rate diR/dt
1 10 10010
100
Commutation rate - di/dt, A/μs
Reve
rse
reco
very
tim
e -
trr,
μs
Tj = 125 °C
ITM
= 150 A
MTx
-160
-C1,
13-
Nov
-201
9
Fig 8 – Maximum recovery time trr vs. commutation rate diR/dt (25% chord)
2020-Sep-28 v1.13 © Proton-Electrotex Data Sheet MTx-160-36-C1 page 9 of 12
0 50 100 150 200 250 3000
100
200
300
400
500
600
700
800
900
MTx
-160
-C1,
14-
Nov
-201
9
Mean on-state current — IT(AV)
, A
Mea
n on
-sta
te p
ower
dis
sipa
tion
— P
T(A
V),
W
Ѳ=30º
Ѳ=60º
Ѳ=90º
Ѳ=120º
Ѳ=180º
Ѳ - angle of conduction Sinusoidal current waveforms
Fig. 9 - Mean on-state power dissipation PTAV vs. mean on-state current ITAV for sinusoidal currentwaveforms at different conduction angles (f=50Hz, DSC)
0 50 100 150 200 250 300 350 4000
100
200
300
400
500
600
700
800
900
MTx
-160
-C1,
14-
Nov
-201
9
Mean on-state current — IT(AV)
, A
Mea
n on
-sta
te p
ower
dis
sipa
tion
— P
T(A
V),
W
Ѳ=30º
Ѳ=60º
Ѳ=90º
Ѳ=120º
Ѳ=180º
Ѳ - angle of conduction Rectangular current waveforms
DC
Fig. 10 – Mean on-state power dissipation PTAV vs. mean on-state current ITAV for rectangular currentwaveforms at different conduction angles and for DC (f=50Hz, DSC)
2020-Sep-28 v1.13 © Proton-Electrotex Data Sheet MTx-160-36-C1 page 10 of 12
25 35 45 55 65 75 85 95 105 115 1250
50
100
150
200
250
300
MTx
-160
-C1,
14-
Nov
-201
9
Case temperature — TC, ˚C
Mea
n on
-sta
te c
urre
nt —
IT
(AV
), A
Ѳ=30º
Ѳ=60º
Ѳ=90º
Ѳ=120º
Ѳ=180º
Ѳ - angle of conduction Sinusoidal current waveforms
Fig. 11 – Mean on-state current ITAV vs. case temperature TC for sinusoidal current waveforms atdifferent conduction angles (f=50Hz, DSC)
25 35 45 55 65 75 85 95 105 115 1250
50
100
150
200
250
300
350
400
MTx
-160
-C1,
14-
Nov
-201
9
Case temperature — TC, ˚C
Mea
n on
-sta
te c
urre
nt —
IT
(AV
), A
Ѳ=30º
Ѳ=60º
Ѳ=90º
Ѳ=120º
Ѳ=180º
Ѳ - angle of conduction Rectangular current waveforms
DC
Fig. 12 - Mean on-state current ITAV vs. case temperature TC for rectangular current waveforms atdifferent conduction angles and for DC (f=50Hz, DSC)
2020-Sep-28 v1.13 © Proton-Electrotex Data Sheet MTx-160-36-C1 page 11 of 12
1 10 1001
10
100
0,01
0,1
1
Surg
e on
-sta
te c
urre
nt –
IT
SM, k
A
Pulse length – tp, ms
Safe
ty fa
ctor
– I
2t,
kA2 s
MTx-160-C1, 14-Nov-2019
ITSM
:Vrm
<10V
ITSM
:Vrm
=0.67VRRM
I2t:Vrm
<10V
I2t:Vrm
=0.67VRRM
Tj = 125 °C
Fig. 13 – Maximum surge on-state current ITSM and safety factor I2t vs. pulse length tp
1 10 1000,1
1
10
Surg
e on
-sta
te c
urre
nt –
IT
SM, k
A
Number of pulses – np
Vrm
<10V
Vrm
=0.67VRRM
Tj = 125 °C
MT
x-16
0-C
1, 1
4-N
ov-2
019
Fig. 14 - Maximum surge on-state current ITSM vs. number of pulses np
2020-Sep-28 v1.13 © Proton-Electrotex Data Sheet MTx-160-36-C1 page 12 of 12