quantum semiconductor electronics department of electronic
TRANSCRIPT
H I RAKAWA GROUP [QuantumNanophysicsanditsDeviceApplica@ons]
NanoscienceCenterforPhotonics,Electronics,andMaterialsEngineering
QuantumSemiconductor E lectronics
Terahertzphotodynamicsanddeviceapplicationsofquantumnanostructures Ee202
Department of E lectronic Engineer ingand Informa@onSystems hLp://thz. i i s .u-tokyo.ac. jp
Quantumnanophysicsanditsdeviceapplica3ons
Variousintriguingphysicsshowsupinquantumnanostructuresowingtosizequan@za@[email protected]@gatenovelphysicsinsuchquantumnanostructuresandexploretheirdeviceapplica@ons.
■ Carrierdynamicsanddeviceapplica@onsofquantumnanostructuresintheTHzrange ■ Nanoscienceforsinglemoleculartransistors■ Novelhigh-sensi@vity,fastterahertzdetectorsusingMEMSresonators■ Thermioniccoolingeffectinsemiconductorheterostructures
Bloch oscillation in semiconductor superlattices and its application to THz oscillators
Fabrication of atomic-scale nanogap electrodes and single molecular transistors
Thermionic cooling in semiconductor heterostructures
-1 0 1 2 3 4Time (psec)
T = 10K
THz
elec
tric
field
, ETH
z (arb
. uni
ts)
1
11
21
31
Fb = 39 kV/cm
GaAs (6.5 nm)/Al0.3
Ga0.7
As (2.5 nm) SL
femtosecond laser
VG#(V)�
V SD#(m
V)�
C84�DrainSource
Gate
DrainSource
Gate
20
30
40
Time (s)
GJ (2
e2 /h)
0.3
0.4
0.5
0.6
VJ (V
)
VJ#
100#s#
GJ# Au#
VC#
-100�
-50�
0�
50�
100�
-20� -15� -10� -5�
VG (V)�
VS
D (m
V)�
N�N-1�
Sample A �
1#nm�
Development of uncooled, high-sensitivity terahertz detectors using MEMS resonators
NiCr����
120μm�
���� ��� Au�����
AuGeNi�������
PE�
VOx� MEMS�
(pyroelectric)�
NEDT~1 mK/√Hz�
NEDT~1 µK/√Hz�
-35 -30 -25 -20 -15 -10 -5 0
Δf (kHz)
Vo(
x) (m
V)
0 µW 390 µW 800 µW 640 µW 500 µW 200 µW