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R2R Processing of Flexible Devices

Mani Thothadri, PhDSenior Director, New Business & Strategic InitiativesDisplay & Flexible Technologies Group

FlextechJune 20, 2017

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Dan Forster Christoph Daube Juergen Henrich Stefan Hein Christof Kurthen Hans Georg Lotz Thomas Deppisch Tobias Stolley Fabio Pieralisi Jens Degenhardt Armin Reus Gerhard Steiniger Dirk Wagner Uwe Hermanns

Neil Morrison Manfred Englert Manuel Campo Heike Landgraf Florian Ries Andreas Sauer Joe Olson Yuriy Melnik Colin Neikirk Robert Visser Kevin Cunningham Rajesh Swaminathan & Many, Many More

Acknowledgements

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Outline

3

Introduction

Megatrends

Key R2R Process Technologies

Barrier Films, Hardcoats & TFT Processing

Summary

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Safe Harbor

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This presentation contains forward-looking statements, including those regarding anticipated growth and trends in Applied’s businesses and markets, industry outlooks, technology transitions, and other statements that are not historical facts. These statements are subject to risks and uncertainties that could cause actual results to differ materially from those expressed or implied by such statements and are not guarantees of future performance. Information concerning these risks and uncertainties is contained in Applied’s most recent Form 10-K or 10-Q and other filings with the SEC. All forward-looking statements are based on management's current estimates, projections and assumptions, and Applied assumes no obligation to update them.

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APPLIED TODAY

SEMI SYSTEMS

SERVICES

DISPLAY and ADJACENT MARKETS$2.1B

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FY16 ORDERS

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Applied’s Display and Flexible Technology Products

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PVD

E-Beam Tester Roll-to-Roll E-Beam Evaporation PVD CVD

CVD

Thin Film Encapsulation

In-Line SEM Review

NEW PRODUCTS(launched in 2016)

CORE PRODUCT PORTFOLIO

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Enabling and Accelerating Innovation

In 1974, a 64GB smartphone would have cost more than

$10B

SEMICONDUCTOR

100,000,000xreduction in cost per transistor in 40 years1

DISPLAY

20xreduction in cost per areain 20 years2

SOLAR

6xreduction in cost per wattin 8 years3

(1) Source: Transistor Museum, History of Transistors (2) Source: Display Search, Nikkei BP, Applied Materials (3) Source: Solarbuzz

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Outline

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Introduction

Megatrends

Key R2R Process Technologies

Barrier Films, Hardcoats & TFT Processing

Summary

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Megatrends 6 principle megatrends driving development in the tech sector

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VIRTUAL REALITYAUGMENTED REALITY

INTERNET OF THINGS

BIG DATA

PERSONALIZED HEALTHCARE

ARTIFICIAL INTELLIGENCE

AUTONOMOUS VEHICLES

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The Wearable Era Has Come! Apple Watch changing public perception of wearable electronics

Flexible display key component in most devices► High end products using AMOLED frontplane

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Apple Watch Phosphor E-Ink Worldtime

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New Wearable Sensor Products for Healthcare Increasing number of wearable sensors on the market

► Shock sensors for determination of impact/blast damage► Real time electrocardiograms (EEG) & heart rate monitoring ► UV dose/exposure monitoring

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Kind Permission: J. Rogers, MC10

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Epidermal Electronics: The Ultimate Form Factor Application? Epidermal electronics provide best match between exploitation of form factor and need for low cost

processing► Metallic strain gauge serpentine structures for EEG/ECG applications► Thermal sensors for blood flow measurement based on resistors► Blood oximeters based on OLED light sources & organic photodiodes► Sweat analytics for body condition monitoring using microfluidics

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Kind Permission: J. Rogers, MC10

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Internet of Things (IoT) Concept first proposed by Kevin Ashton in 1999 for network of interconnected smart objects and devices

► 1 Trillion interconnected sensors predicted in 2022

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Innovations in Incumbent LCD Display Technology Incumbent LCD display industry also innovating to keep pace with OLED for mobile and wearable devices

Next generation LCD displays moving toward Quantum Dot (QD) enhanced backlights for improved color & up to 40 % power savings

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Barrier Film

https://dot-color.com/page/5/http://www.laserfocusworld.com/articles/print/volume-50/issue-04/features/advances-in-displays-quantum-dot-film-lets-lcds-express-50-more-color.html/

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Outline

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Introduction

Megatrends

Key R2R Process Technologies

Barrier Films, Hardcoats & TFT Processing

Summary

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Roll-to-Roll Technology Roadmap

Tomorrow

Today

Future

Vacuum deposition Simple patterning Etch (dry & wet) Printing

Blanket films Simple, passive optical

& electronic devices

Polarizers & plasmonic devices IoT devices Sensors – Health, food spoilage &

waste

Vacuum deposition Blanket films

Touch sensors QDEF – Barrier layers Optical coatings Food packaging

Vacuum deposition Complex patterning Etch (dry & wet) Printing Flex-hybrid integration

Complex, active optical & electronic devices

Low-resolution displays Flexible electronics Sensors

Long-term roadmap to manufacture increasingly complex devices

ApplicationDeviceProcess

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THERMAL EVAPORATION

SPUTTERING PECVDE-BEAM EVAPORATION

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Roll to Roll (R2R) Products

TopMet TopBeam SmartWeb R2R CVD

Barrier coatings for food packaging and other advanced industrial coatings.

Coatings for energy storage.

Special barrier coatings used in anti-counterfeit films and transparent packaging.

Coatings for energy storage.

Market leader in ITO deposition for capacitance touch panel manufacturing.

Complex multilayer PVD stacks for solar control & window films in automotive and architectural application.

R2R solution for deposition of dielectrics and semiconductor materials.

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R2R Vacuum Processing Equipment Front surface contact free common platform

► Web support from back eliminates contact-based defects

Winding versatility► Low-friction roller bearings and optimized load cell positions for precise web tension ► Dual-bearing roller architecture to ensure roller-to-roller parallelism► Supports a broad variety of substrate types and thicknesses► Usable coating width 1.5 m

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ProcessZones

R2R Vacuum Deposition Equipment

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00.20.40.60.8

11.21.4

0 400 800 1200 1600Web Width (mm)

PECVD: High Density Plasma Source Linear plasma source

► High-density plasma with low thermal budget► High-quality film deposition► Wide impedance range stability demonstrated► CFD design to avoid powder buildup

− Laminar gas flow− Uniform pressure distribution− No dead or recirculation zones

Plasma characteristics

Plasma density > 1 x 1010 cm-3

Ion energy < 30 eV

Electron temperature < 3 eV

Plasma Uniformity

Full web width plasma uniformity ~± 2.5%

Tran

smis

sion

/ co

lor r

atio

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PVD: Rotary Cathode Technology Continuous target rotation ensures clean target surface

► Minimized particle buildup and emission − Dramatically reduced ITO & IGZO nodule density &/or target crack density

► Maximized process stability and target utilization (> 80 %)

Reduction of heat load to substrate during deposition with rotatable► Lower target surface temperature with rotatable

− Less risk of film overheating − Higher line speed on heat sensitive, thinner gauge substrates

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Etch: Roll to Roll Etch Equipment R2R dry etch tools required for selective etching of silicon based semiconductor layers & dielectrics

► Utilizes fluorine & chlorine based chemistry for photoresist strip, silicon based dielectric & semiconductor etch & anisotropic metal etch► Vision system required for inline microscopy & etch endpoint detection

Commercial wet etchers available for source/gate/drain metal etching ► Requirement for selective process chemistry for etching different metals► Multiple rinse step capability► 200oC anneal tunnel dryer► HEPA filtered enclosure rated Class 100 or better

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Imprint Lithography: Paradigm Shift in R2R Patterning

Source : HP, 2009Single mask, single imprint process with perfect source, gate & drain alignment!

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Imprint Lithography Process

~40nm lines on 50μ polyimide

Multilevel structures on flex at 5m/min

1μm

4 levels in 0.5 μ step heights

20 µm

0123

Pixel speed depends linearly on mobility but inversely with the square of channel length

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TFT Backplane Imprint in Photoresist Provides basis for manufacture of TFT backplanes for active matrix driven sensors and low ppi displays in

a-Si and MOx (<200 ppi)

Micron level features produced with excellent sidewall characteristics & aspect ratio► Provides template for subsequent etch steps to manufacture device

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1µm

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Outline

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Introduction

Megatrends

Key R2R Process Technologies

Barrier Films, Hardcoats & TFT Processing

Summary

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Key R2R Technologies / Applications Substrate planarization Substrate barrier deposition Device passivation, encapsulation &/or barrier film deposition Low temperature TFT backplane manufacture Frontplane (EPD, EW & OLED) &/or sensor manufacture Cover lens hardcoat deposition

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Multilayer Barrier Stacks Low temperature inorganic layer to inhibit H2O and O2 permeation

► Defects in each inorganic layer impact permeation► Low temperature process to avoid active organic layer degradation

Multilayers critical to achieve high barrier for QD and OLED devices► Redundancy and increase in effective diffusion path► Planarization or burying of particles, defects by organic or quasi-organic layers

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Ref:- Robert Visser MIT/Stanford Nanoforum, April 2005Ref: Flexible Flat Panel Displays,Ed. G.P. Crawford (2005).

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Inorganic Layers for Barrier Films

PECVD SiNx best choice for performance, cost, mechanical robustness► Resistant to cracks during downstream processing and handling

Key know-how from large area PECVD processes transferable to R2R► High deposition rate and low cost processes for high quality films► Particle mitigation strategies

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Material Deposition Method

Conformal Coating

Cost Particle Size / Density

Resistance to Acids

Layer Density FractureToughness

AlOx PVD No – line of sight deposition

High - low deprate process

Microns/ high density

Low 3.2 g/cm3 3.3-4.8 MPa m0.5

SiOx PECVD Yes Low – high deprate process w/ HMDSO

Submicron/ high density

High 2.2 g/cm3 0.55-1.7 MPa m0.5

SiNx PECVD Yes Moderate – high dep rate process w/SiH4

Submicron/ low density

High 2.7 g/cm3 4-6 MPa m0.5

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Single Layer SiNx Barrier Performance Defect averaged barrier performance measured using Aquatran 2 permeation unit at 40oC/100% RH

conditions► Barrier improvement factor increases linearly with SiNx layer thickness ► Typical WVTR ~ 1 x 10-3 g/m2 day for SiNx layers on PET with MOCON (Ca test results >> 10 x lower)► Typical WVTR at 20oC/50% RH ~ 10 x lower than at 40oC/100% RH → 1 x 10-4 g/m2 day ► Champion values as low as 7 x 10-4 g/m2 day obtained on PET at 40oC/100% RH → 7 x 10-5 at 20oC/50% RH

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Barrier Buffer Layer Development Quasi-organic interlayer required between SiNx layers to create torturous path Encapsulates particles and defects in place Mechanically decouples stiffer SiNx layers for increased stack flexibility High transmittance film when referenced to uncoated substrate

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Film RI DRnm m/min

Uniformity % %T@400nm

StressMPa

PP-HMDSO 1.45 > 105 < 4% > 95% ~ 0

Plasma Polymerized HMDSO (PP-HMDSO)

Hexamethyldisiloxane(HMDSO)

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Multilayer Stack Barrier Performance Defect averaged barrier performance measured using Aquatran 2 permeation unit at 40oC/100% RH

conditions► WVTR < 7 x 10-5 g/m2 day for full CVD 3 layer stack on PET

− Equivalent to < 7 x 10-6 g/m2 day at 20oC/50%RH

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Hardcoat for Next Generation Flexible Display Flexible hardcoat to replace current glass cover lens for bendable, rollable & foldable displays

Abrasion resistant, UV stable & compatible with organics found in fingerprints

R2R PECVD used to deposit tunable CTE siloxane based hardcoats on flexible substrates► Pencil hardness improvement (4H 9H) through Adhesion Promotion Layers

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R2R Process Flow: a-Si:H Devices High grade, low surface roughness 50 µm PI foil used

► Bakeout required for mechanical stabilization & outgassing ► Plasma pretreated to enhance layer stack adhesion► Deposition of barrier layer stack in CVD lab tool

TFT layer stack deposition► Al Gate metal layer deposited in PVD tool► SiO2 etch stop layer, SiNx gate dielectric, aSi channel layer & n+ contact layer deposited in CVD tool► Cr source/drain metal layer deposited in PVD tool

Device patterning► Imprint lithography used to pattern stack in single step

− Coplanar device architecture

► Dry/wet etch steps used to provide final device structure

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Imprint mask on TFT stack consisting of•Top metal•Contact layer (optional)•Semiconductor•Dielectric•Bottom metalProcess produces complete backplane:TFTPixel electrodeData lineCrossoverGate line

Etch exposed stack all the way to the substrate undercutting the bottom metal in the thin regions to isolate the gate lines and the TFTs

Etch the polymer down to expose the layers covering the gate lines

Etch through top metal and (optionally) other layers to form crossovers

Etch polymer a second time to expose area covering TFT channel

Etch top metal and contact layer to define TFT channel

Remove remaining polymer to expose completed backplane

Disassemble array one layer at a time to expose structure. Begin by removing top metal

Next remove contact layer to expose channel semiconductor

Then remove semiconductor to expose gate dielectric

Finally remove gate dielectric to expose gate lines that were isolated by the undercut

SAIL Backplane: Patterning Process Flow

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R2R TFT Device Performance Performance levels sufficient for sensor, EPD & electrowetting display applications

► High field effect mobility ~ 0.95 cm2/Vs for aSi, ~ 10 cm2/Vs for IGZO► High on/off current ratios ~ 108 for both aSi and IGZO transistors► Low threshold voltage ~ -2.5 V for aSi & ~ 0.5 V for IGZO► High threshold voltage drift stability < 0.4 V after 2000 s for aSi

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From Materials to Circuits Holistic toolbox approach required to build full circuits on flexible substrate materials for wearable device &

IoT applications

Hybrid solution required to optimize for cost & performance

Number of steps & complexity of device will determine whether full R2R, R2S or S2S approach is required for yield and cost management

Component performance & full scale device simulation required to reduce product development time and costs

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Materials

• Substrates• Inorganic Layers• Organic Layers• Metals• Inks• Photoresists• Adhesives

Deposition Processes

• PVD• CVD• Evaporation• Printing

Etch Processes

• Wet Etch• Dry Etch• Laser Ablation

Lithography

• Photolithography• Imprint

Lithography• Laser Ablation

Bond/Interconnect

• Flip Chip• Printed Pads• Low Temp Cure• Pick & Place

Test/Repair

• Optical Inspection

• Contact Probes• Laser Trimming• Laser CVD

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Why Hybrid for Mobile, Wearable & IoT Devices? Essential for high performance applications

► Organics used in printed electronics not yet optimized for mobility & stability

► Atmospheric printing processes not yet accurate enough to compete with vacuum processed inorganic device stacks patterned with traditional lithography

► Substrate performance limits certain device types and integration paths

Required for high resolution analog-digital conversion, RF communication, high density memory and certain logic applications

Permits increased computational power, component density whilst reducing chip size with little compromise in total product form factor

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Outline

39

Introduction

Megatrends

Key R2R Process Technologies

Barrier Films, Hardcoats & TFT Processing

Summary

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Roll-to-Roll Technology Roadmap

Tomorrow

Today

Future

Vacuum deposition Simple patterning Etch (dry & wet) Printing

Blanket films Simple, passive optical

& electronic devices

Polarizers & plasmonic devices IoT devices Sensors – Health, food spoilage &

waste

Vacuum deposition Blanket films

Touch sensors QDEF – Barrier layers Optical coatings Food packaging

Vacuum deposition Complex patterning Etch (dry & wet) Printing Flex-hybrid integration

Complex, active optical & electronic devices

Low-resolution displays Flexible electronics Sensors

Long-term roadmap to manufacture increasingly complex devices

ApplicationDeviceProcess

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Summary

Displays & Flexible Electronics key drivers “Information Universe”

R2R vacuum processing already in HVM for Touch Panel & Barriers

Complex device architectures incl flexible TFT backplanes require R2R

patterning

Hybrid integration schemes required to combine the advantages of traditional

silicon IC logic & memory with large scale integrated sensor & display devices

Applied Materials creating building blocks to enable R2R manufacturing of more complex flexible devices and applications