RAL S&T Rolling Grant CMOS Active Pixel Sensor Development Nov 2004

Nick Waltham

Space Science and Technology Department

and

Mark Prydderch

Instrumentation Department

Rutherford Appleton Laboratory

CMOS Active Pixel Sensor Development for Solar Orbiter

RAL S&T Rolling Grant CMOS Active Pixel Sensor Development Nov 2004

Spectrometer / Imager for ESA’s Solar Orbiter Mission

Requirements

Requirements

Large format sensors: 2k x 2k pixels.

Small pixel size: 10 m.

Science-grade dynamic range, noise, linearity, etc.

EUV sensitivity.

Radiation hard.

Low power.

RAL S&T Rolling Grant CMOS Active Pixel Sensor Development Nov 2004

Science-grade CMOS APS development at RAL

4k x 3k Pixel Sensor Development for ESA’s Solar Orbiter 5 m pixel size.

12 bit dynamic range.

4-transistor CDS pixel for low noise.

0.25 m CMOS process.

EUV sensitivity by back-thinning or front-etch.

Architecture

Sensor mounted on an invar block and wire-bonded to a PCB

Bond-wire protection-cover fitted

8-inch Wafer 0.25 m CMOS

4kx3k pixel sensor die

Pixel Circuit

CAD Simulation

CAD Layout

RAL S&T Rolling Grant CMOS Active Pixel Sensor Development Nov 2004

Science-grade CMOS APS development at RAL

Progress to date . . .

Modified Batch 1 wafers Early test image from modified

Batch 1 wafers.

Sufficient progress to proceed with the new Batch 2 wafers.

Next Steps . . . Characterisation of Batch 1 and

Batch 2 samples for:

Readout noise

Dynamic range

Linearity

Leakage current

Pixel uniformity

Radiation tolerance, etc.

Back-thinning (e2v)

New Test-Structures

Early test image 4kx3k pixels with JPEG compression for display purposes