reactive sputtering control in hipims
TRANSCRIPT
P r o c e s s s t a b i l i z a t i o n i n r e a c t i v e H i P I M S
Standard processes may not work, such as PEM or I-V average control
V. Bellido-Gonzalez, Surf. Coat. Technol . 204 (2010) 2159
HIPIMS PMT
Ti (400mm2) Ar + Nitrogen Constant Average Power 3kW 120us – 500Hz Ipeak : 220 – 500A peak
I=220A
Metallic zone
I=500A Poisoned zone
P r o c e s s s t a b i l i z a t i o n i n r e a c t i v e H i P I M S
660
720
780
840
Targ
et v
olta
ge (V
)
N2 f
low
rate
(scc
m)
0
5
10
I=500A
Poisoned mode
660
720
780
840
Targ
et v
olta
ge (V
)
N2 f
low
rate
(scc
m)
0
5
10
I=220A Metallic mode
P r o c e s s s t a b i l i z a t i o n i n r e a c t i v e H i P I M S
Mass spectrometry / reactive gas [Sproul, Thin Solid Films 491 (2005)1]
Pulsing reactive gas flow [Vlček , Surf. Coat. Technol. 236 (2013) 550]
Partial pressure / adjust average power [Sittinger, Thin Solid Films 516 (2008 ) 5847]
Adjusting average discharge current [Weichart U.S. Patent application No. 2009071667 (A1)]
Peak current / adjust frequency [D.Lundin J. Phys. D: Appl. Phys. 49 (2016) 065202]
Peak PEM / reactive gas [Bellido-Gonzalez, Surf. Coat. Technol 204 (2010) 2159]
P r o c e s s s t a b i l i z a t i o n i n r e a c t i v e H I P I M S
Stabilization during Pulse-ON phase
Peak current Peak plasma emission
Ipeak=580A
For a specific wavelength (optical filter)
H a r d w a r e u s e d f o r e x p e r i m e n t s
With HIPIMS option (optical and electrical)
Planar rectangular magnetron (400x100mm2) Ti, Al targets N,O reactive gas
N e w J o i n t v e n t u r e
6kW DC + HIPIMS Max. I pulse peak : 500A Max. V pulse peak : 1.2kV
w w w . h i P V . e u Vendor Innovators Showcase – Thursday May 12 V-15 hiP-V: A New HiPIMS Power Supply Technology - G. Eichenhofer
H i P I M S yo u r s y s te m
T h e n e w i n d u s t r i a l H i P I M S P S t e c h n o l o g y !
•F l e x i b l e •R e l i a b l e •M o d u l a r •M u l t i - F u n c t i o n a l
The All in ONE
H PIMS-PS
A c o l l a b o r a t i o n o f
B o o t h 4 3 7 B o o t h 5 0 6
SpeedFlo HIPIMS mode 520nm optical filter 480 500 520
0
20
40
Metallic mode (Ti) Poisoned mode (Ti + N)
Inte
nsity
(a.u
.)Wavelength (nm)
300 350 400 4500
20
40
Metallic mode (Ti) Poisoned mode (Ti + N)
Inte
nsity
(a.u
.)
Wavelength (nm)
Highly ionized Ti remains constant 320nm filter not useful
P l a s m a e m i s s i o n l i n e s T i + N
Ti (400mm2) Ar + Nitrogen Constant Average Power 3kW 120us – 500Hz Ipeak : 220 – 500A peak
520nm optical filter available
H I P I M S T i N c o a t i n g s : p l a s m a d y n a m i c s
45% 35% 25%
Ti (400mm2) Ar = 110sccm, Nitrogen = 26sccm Constant Average Power 1.5kW TON = 100us
200 300 400 500
150
200
250
300
Ipea
k (A
)
Ipeak
Sens
or (V
)
Frequency (Hz)0
2
4
6
8
10
PMT Sensor
H I P I M S T i N c o a t i n g s : p l a s m a d y n a m i c s
45% 35% 25%
Ti (400mm2) Ar = 110sccm, Nitrogen = 0sccm Constant Average Power 1.5kW Frequency = 300Hz
60 80 100 120 140125
150
175
200
225
Ipea
k (A
)
Ipeak
Sens
or (V
)
Time ON (us)
6.3
6.6
6.9 PMT Sensor
660
720
780
840
Targ
et v
olta
ge (V
)
N2 f
low
rate
(scc
m)
0
5
10
15
20
40
60
80
100
PMT
Sens
or s
igna
l (%
)
N2 f
low
rate
(scc
m)
0
5
10
15
P l a s m a e m i s s i o n l i n e s T i + N
No feedback control possible
H I P I M S T i N c o a t i n g s : f e e d b a c k c o n t r o l
0 1000 2000 3000 4000
20
40
60 Sensor PMT
Sign
al (%
)
t (s)0
4
8
12
16
20 Actuator Nitrogen
Nitr
ogen
flow
(scc
m)
50 100 150
20
40
60
80
Nitro
gen
flow
(scc
m)
PMT
Sens
or s
igna
l (%
)
0246810
Time (sec)
45% SetPoint 35% 25%
Ti (400mm2) Ar + Nitrogen Constant Average Power 3kW 120us – 500Hz Ipeak : 220 – 500A peak 1hr deposition
H I P I M S T i N c o a t i n g s : f e e d b a c k c o n t r o l Nitrogen flow at setpoint 45% ~ 4.5 sccm 35% ~ 5.5 sccm 25% ~ 7.0 sccm
Setpoint [%] 45 35 25
Hardness [GPa] 22.0 22.5 17.5
Dep. Rate [µm/hr] 3.7 3.7 3.5
H I P I M S T i N c o a t i n g s : f e e d b a c k c o n t r o l
45% SetPoint 35% 25% Ti (400mm2) Ar + Nitrogen Constant Average Power 3kW 120us – 500Hz Ipeak : 220 – 500A peak
RT deposition Floating potential
400 600 8000
20
40
Metallic mode (Al) Poisoned mode (Al + O)
Sign
al in
tens
ity (
a.u.
)
Wavelength (nm)
300 320 340
0
10
20
30 Metallic mode (Al) Poisoned mode (Al + O)
Sign
al in
tens
ity (
a.u.
)Wavelength (nm)
387 396 4050
20
40
Metallic mode (Al) Poisoned mode (Al + O)
Sign
al in
tens
ity (
a.u.
)
Wavelength (nm)
H I P I M S r e a c t i v e c o n t r o l A l - O
2kW 35us – 1kHz Ar flow 150sccm O2 flow 15sccm
10203040506070 400nm emission signal
Sens
or s
igna
l (%
)
500
600
700
800
900
1000 Sensor (V)
Targ
et v
olta
ge (V
)
0
2
4
Ramp
Oxy
gen
flow
(scc
m)
H I P I M S r e a c t i v e c o n t r o l A l - O
2kW average power 35us – 1kHz Ar flow 150sccm O2 flow 15sccm
H I P I M S T i N c o a t i n g s : p o s i t i v e r e v e r s a l
Floating Bias
With positive voltage reversal
Peak current Ipeak=580A
Target
Heuréka Session– Tuesday May 10 6:10 p.m. H-3 Tribomechanical properties of DLC deposited by magnetron sputtering on metallic and insulating substrates. I.Fernandez-Martinez
Setpoint [%] 45 45
Hardness [GPa] 22.0 13
POSITIVE YES NO
H I P I M S T i N c o a t i n g s : f e e d b a c k c o n t r o l
Floating Bias
With positive voltage reversal Without positive voltage reversal
Peak current
Floating Bias
Peak current
S u m m a r y
P e a k i n t e n s i t y s i g n a l s f o r p r o c e s s s t a b i l i z a t i o n .
P e a k c u r r e n t s t a b i l i z a t i o n a l s o p o s s i b l e , o n g o i n g e x p e r i m e n t s .
I p r o m i s e d D u a l M a g n e t r o n …