reactively sputtered tin/ti/(si/psi) & tin/ss thin ... labs...the electrochemical studies, we have...
TRANSCRIPT
-
Gagan Kumar Sharma, Bhanu Ranjan and Davinder Kaur*FUNCTIONAL NANOMATERIALS RESEARCH LAB
DEPARTMENT OF PHYSICS & CENTER FOR NANOTECHNOLOGY
INDIAN INSTITUTE OF TECHNOLOGY ROORKEE
ROORKEE-247667, UTTARAKHAND, INDIA
REACTIVELY SPUTTERED TiN/Ti/(Si/PSi) & TiN/SS THIN FILMS TOWARDS
SUPERCAPACITIVE ELECTRODE
ABSTRACT: There has been great interest in developing and refining more efficient energy storage devices that could be coupled with renewable energy sources. Particularly, nitride based
supercapacitors (SCs) have gained gigantic attention for futuristic device applications. Transition Metal Nitrides are promising candidate as supercapacitor electrode material because of their excellent
electrical conductivity and superior cycling stability. The Binder Free Titanium Nitride (TiN) thin films were deposited on Stainless Steel (SS) substrate using reactive DC magnetron sputtering for very
efficient supercapacitive electrode. The morphological, structural and electrochemical properties were systematically studied for the TiN thin films at different sputtering gas (Ar+N2) composition. From
the electrochemical studies, we have observe that the TiN thin films as a working electrode exhibits high specific capacitance at minimum scan rate (451 Fg-1 at 0.02Vs-1 in 1M KOH). Thus, this study
suggest that the TiN thin film is a potential candidate for energy storage devices at large scale applications.
RF Magnetron Sputtering Chamber
Deposited Thin Films
Porous Silicon (PSi) formation
Methods
Results and Conclusion
Introduction and Objective
The authors Gagan Kumar Sharma and Bhanu Ranjan would like to acknowledge the financial support provided by the Department of Science & Technology (DST) and University Grant Commission, India. This work was supported by the Nano Mission with
Reference number SR/NM/NT-1065/2015.
References:
[1] Ying Wu, and Yan Yu, Energy Storage Materials, 2018, 7, 30484.
[2] L Porto R, Bouhtiyya S, Pierson JF, Morel A, Capon F and Boulet P, Electrochemical Acta, 2014, 141:203-11.
[3] Xie Y and Tian F, Material Science Eng B, 2017, 215:64-70.
[4] S Zhanga, F Yana, Y Yanga, M Yana, Y Zhanga, J Guoa and H Lib, Applied Surface Science, 2019, 48, 61-69.
[5] Theerthagiri, Jayaraman, et al., Journal of Industrial and Engineering Chemistry, 2018, 67 : 12-27.
[6] Ghosh, Subrata, Sang Mun Jeong, and Shyamal Rao Polaki., Korean Journal of Chemical Engineering, 2018, 35.7 : 1389-1408.
➢ Titanium Nitride (TiN) thin film as Supercapacitive electrode:
• The main goal of this work is to study the effect of gas composition on crystalline phase, electrical &
electrochemical properties of titanium nitride thin films on various substrates.
• Firstly, TiN/Ti deposited on Si(100) substrate by using reactive DC magnetron sputtering has been studied at
different Argon and Nitrogen gas compositions with fixed 20 SCCM gas flow rate.
• Secondly, TiN/Ti deposited on porous silicon (PSi) substrate by using reactive DC magnetron sputtering has been
studied and its Current-Voltage (I-V) & Cyclic Voltammetry (CV) Characteristics has been studied.
• Then, TiN thin film deposited on metallographically cleaned Stainless Steel (SS) substrate by using reactive DC
magnetron sputtering has been studied and its I-V & CV characteristics has also been studied.
Acknowledgements & References
(b)
I-V Characteristics for different samples
Cyclic Voltammetry (CV) Characteristics for Stainless Steel (SS)
Cyclic Voltammetry (CV) Characteristics for PSi
2D and 3D AFM Images of the as-deposited TiN thin film on Stainless Steel substrate: S1 (25% N2), S2 (50% N2), S3 (100% N2)
❖ Ti & TiN thin films deposited on Si(100) substrates by Reactive DC Magnetron sputtering using Ti target.
❖ For Ti deposition, working pressure (10 mTorr), substrate temperature (200 °C), sputtering power (150W),
deposition time (10 min).
❖ For TiN/Ti/(Si/PSi) deposition, working pressure (12 mTorr), substrate temperature (400 °C), sputtering
power (120W), deposition time (15 min).
❖ For TiN/SS deposition, working pressure (12 mTorr), substrate temperature (500 °C), sputtering power
(130W), deposition time (45 min).
➢ Structural and Morphological Characterization:
• The Crystalline nature of the as-deposited Titanium and Titanium Nitride thin film has been studied using X-Ray
Diffractometer (Bruker D8 advanced).
• The Morphology and surface roughness has been studied using the 2D and 3D AFM Images of the as-deposited
Titanium nitride thin film on Stainless Steel Samples: S1 (25% N2), S2 (50% N2), S3 (100% N2) using AFM (NT-
MDT-INTEGRA).
• The surface morphology of Porous Silicon and as-deposited Titanium Nitride thin film has been studied using FE-
SEM (FEI Quanta 250 FEG-SEM).
➢Electrochemical Characterization :
• Cyclic Voltammetry (CV) of TiN/SS working electrode at different scan rates: 0.02Vs-1, 0.06Vs-1, 0.10Vs-1and
0.12Vs-1 in 1M KOH electrolyte has been studied using Nova Control Cyclic Voltammetry setup.
• Cyclic Voltammetry (CV) of TiN/PSi working electrode at different scan rates: 0.02Vs-1, 0.06Vs-1, 0.10Vs-1and
0.12Vs-1 in 1M KOH electrolyte has also been studied.
➢Electrical Characterization:
▪ The electrical characterization (I-V) of TiN/Ti , TiN/Ti/PSi and TiN/SS within potential window (-1V to +1V)
performed by Semiconductor Characterization system (Keithley 4200-SCS) and studied.
(S1) (S2) (S3)
FE-SEM Images of TiN/SS working electrode at different scales
(b) (c)
XRD Pattern of Ti and TiN
FE-SEM Images of PSi and Ti/PSi
Conclusion:
▪ TiN/Ti/Si , TiN/Ti/PSi and TiN/SS thin films have been successfully deposited
using reactive DC magnetron sputtering.
▪ Electrochemical studies shows that TiN/SS delivers a high specific capacitance
of about 451F/g at scan rate of 0.02Vs-1.
▪ The sputtering technique is recommended as a facile and versatile deposition
technique to achieve contamination and binder free electrodes for high
performance electrodes.
▪ There is a enhancement in the electrochemical performance due to the
introduction of pores in the silicon.
▪ The various sputtering parameters like deposition temperature were optimised
keeping just the base pressure constant at 2×10-6 Torr.
(b)