reducing tsv integration cost using f.a.s.t....
TRANSCRIPT
REDUCING TSV INTEGRATION COST USING
F.A.S.T. DEPOSITION SOLUTION
Julien Vitiello
C.E.O.
27/10/2016
KOBUS & F.A.S.T.An introduction
CONFIDENTIAL
KOBUS AT A GLANCE
Formerly Altatech Deposition division,
On the market since 2004, with more than 100 systems shipped
we develop advanced deposition system since 2007
We have developed patented technology called F.A.S.T.®
ALD film performances at CVD speed
Unique film properties
The solution when thick and conformal layers are required
Skilled team combining design manufacturing and service
> 80% Ph.D and Engineers
> 100 systems shipped
Hardware, software & process backgrounds from leading S/C equipment suppliers
or S/C manufacturer.
Our Facilities for manufacturing and application lab
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1200m² Class ISO 7 cleanroom Registered ISO 9001-2008 Assembly workshops Analysis area (SEM, optical test bench …) Location: Grenoble France
CONFIDENTIAL
FAST ATOMIC SEQUENTIAL TECHNOLOGY 1/2
At the crossroads of ALD and CVD deposition techniques
Unique process control
TEMPORAL CONTROL
• Better film properties
SEPARATE SPECIES INLET
• No parasitic reactions
HIGH REACTION RATE
• Lower precursor consumption
• Higher deposition rate
PRECISE VOLUME INTRODUCTION
• Repeatability
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UNIQUE PROCESS CAPABILITIES
CONFIDENTIAL
FAST ATOMIC SEQUENTIAL TECHNOLOGY 2/2
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ALD FILM PERFORMANCES AT CVD SPEED
TSV SOLUTIONWhere Thick & Conformal matters
CONFIDENTIAL
KOBUS TSV SOLUTION
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F.A.S.T.SiO2
F.A.S.T.TiN/Cu
CONFIDENTIAL
UNIQUE F.A.S.T. VALUE
Current market limitations
PVD is used to fill TSV but limited to 10:1 A/R due to poor conformity (%
Thickness at the bottom of TSV versus thickness at the top)
ALD delivers a conformal layer deposition process into TSV but is not
economically viable due to very low deposition rate
F.A.S.T. unique value
FAST is the only solution to deliver highly conformal thick layer into TSV with A/R
> 10:1
FAST is working for both Via Last and Via middle integration scheme (150˚C &
350˚C)
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CONFIDENTIAL
SILICON OXIDE LINER SOLUTION
- TEOS based deposition method
- Deposition at 350°C & 150°C
- Conformality adjustable
- Compatible with hardmask
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SiO2 HARDMASK
F.A.S.T.
SiO2
CONFIDENTIAL
SILICON OXIDE LINER SOLUTION
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> 3X THINNER LAYER > 10X FASTER
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TIN BARRIER & CU SEED SOLUTION
Based on TDEAT for TiN barrier and Cupraselect for Cu seed layer
Example with 10:1 aspect ratio vias (10µm wide, 100 µm high)
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Top: 200 nm Middle: 200 nm Bottom: ~190 nm
> 95% CONFORMALILTY ON 10:1 ASPECT RATIO
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TIN BARRIER & CU SEED SOLUTION
Patented in-situ Cu cleaning process
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Bottom chamberTop chamber
MANDATORY FOR PRODUCTION
EFFICIENT CHAMBER CLEANING
CONFIDENTIAL
TIN BARRIER & CU SEED SOLUTION
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÷10 THICKNESS FOR CMP
CONCLUSION
CONFIDENTIAL
CONCLUSION
Compatible with Via Last and Via Middle approach
STANDARD MATERIAL USED
150 & 350°C VERSION
With conformality management:
INSENSITIVE TO ETCH PROFILE
CMP TIME DRASTICALLY REDUCED
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DEDICATED SOLUTION TO TSV NEED
COST BREAKDOWN ON INTEGRATION
CONFIDENTIAL
ANY QUESTIONS ?
VISIT US - BOOTH #538
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