reliability and emerging capabilities of 1060nm...
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IEEE 802.3 100GNGOPTX Study Group, January 2012 Interim, Newport Beach
A. Kasukawa, Furukawa Electric CompanyR. Lingle, Jr., OFS
Reliability and Emerging Capabilities of 1060nm VCSELs
IEEE 802.3 100GNGOPTX Study Group, January 2012 Interim, Newport Beach
1060nm Wavelength
850 1060 1310
OFL-
BW55
0(M
Hz*k
m)
Existing OM2 fiber1060nm VCSELs were first developed for proprietary applications
MMF can be optimized for OM3 / OM4 performance at 1060nm
Loss2.1 dB/km1.2 dB/km0.9 dB/km
IEEE 802.3 100GNGOPTX Study Group, January 2012 Interim, Newport Beach
1060nm wavelength LD (VCSEL) with InGaAs active
Wavelength (nm)
900 1000 1100 1200
Performance
*R.G. Waters et.al., IEEE PTL, 2, pp531-533, 1990
GaAs SQW InGaAs SQW
EBIC image after aging test
DLD growth velocity for GaAs/AlGaAs SQW is much higher than that for InGaAs/GaAs SQW(Especially in high current density)
IEEE 802.3 100GNGOPTX Study Group, January 2012 Interim, Newport Beach
Number of Optical Channels
25Gbps/ch or higher
Speed, power consumption, reliability, and cost become crucial
IEEE 802.3 100GNGOPTX Study Group, January 2012 Interim, Newport Beach
Inherent Material Merit in 1060nm VCSELs with InGaAs SL-QW
High Speed at high temperature, owing to high material gain
High material reliability due to slow dislocation velocity
Low power dissipation due to low built-in voltage, high quantum efficiency
0.0
0.1
0.2
0.3
0.4
800 1000 1200 1400 1600Wavelength (nm)
Ener
gy /b
it (p
J/bi
t) TU-Berlin,2009
UCSB,2007
Furukawa, 2010
NEC, 2007
Furukawa 2011
A. Muting et al.,IEEE Journal of Selected topics in Quantum Electronics, vol.15, No. 3, pp 679, 2009
GaAs-QW
InGaAs-QW
High Speed characteristics Power consumption characteristics
S. Imai et al.,IEEE Journal of Selected topics in Quantum Electronics, vol.17, No. 6, pp1614, 2011
Oxide Aperture:~6m
10 - 12.5 Gbps20 - 25 Gbps30 - 40 Gbps
IEEE 802.3 100GNGOPTX Study Group, January 2012 Interim, Newport Beach
In-plane lasers with InGaAs active layerProven “Telecom grade” Reliability
Encouraging aging result for highly reliable operation (16-year).Never reported for GaAs-active lasers.Lots of terrestrial and under-sea usage.
www.oclaro.com
IEEE 802.3 100GNGOPTX Study Group, January 2012 Interim, Newport Beach
Summary for large scale reliability test
Condition Quantity (number of chips)
Maximum agingduration (hours)
Device hours@40oC, 6 mA
Number offailures
70oC, 6 mA 1,075 5,000 8.0 x 106 0
90oC, 6 mA 1,121 5,000 1.6 x 107 0
120oC, 6 mA 2,702 2,000 5.4 x 107 0
Total 4,898 7.8 x 107 0
Test procedureHigh temperature: 70, 90 and 120oC, Bias current: 6 mAPackage: commercial 20pin DIP (air ambient; non-hermetic)Failure definition: 2 dB power degradation at 25oC and 6 mAAdopted acceleration factor: Ea = 0.35 eV, n = 0
30 FIT/ch with confidence level of 90%
IEEE 802.3 100GNGOPTX Study Group, January 2012 Interim, Newport Beach
Over 20,000h Life test at 70C, 90C (I=6mA)
IEEE 802.3 100GNGOPTX Study Group, January 2012 Interim, Newport Beach
Eye patterns before and after aging at 120C, 6mA
Eye diagram before aging test
Eye diagram after aging test (5000hrs)
No eye pattern degradation was observed in both for 10Gbps and 25Gbps after long-term aging.
10Gbps
Eye diagram after aging test (2000hrs)
Eye diagram before aging test
25Gbps
Ib=5mA Vpp=400mV (ER=6dB)Ib=5mA ER=360mV(ER=6dB)
IEEE 802.3 100GNGOPTX Study Group, January 2012 Interim, Newport Beach
Preliminary reliability test
-100%-80%-60%-40%-20%
0%20%40%
0 500 1000 1500 2000 2500
Time (hours)
∆P
o (%
)
120℃, 6mA, N=473
One failure was infant failure- Screening condition was not adjusted for 25Gbps device.
Promising result, comparable to those for 10Gbps was obtained.
IEEE 802.3 100GNGOPTX Study Group, January 2012 Interim, Newport Beach
20Gbps transmission over OM2 MMF using 1060nm VCSEL
Possibility to extremely low power consumption optical link~1.5mW/Gbps
IEEE 802.3 100GNGOPTX Study Group, January 2012 Interim, Newport Beach
Conclusions
High Speed data transmission
High material reliability
SPEED
POWER CONSUMPTIONRELIABILITY
Low power dissipation
Promising candidate for high speed, low power consumption,high reliability. In development for 28 Gbps applications
1060nm VCSELs can provide following features simultaneously: