reliability and modeling in harsh environments for space ... · bias for irra.: v gs=v ds=1.2v...

Reliability and Modeling in Harsh Environments for Space Applications

Farzan Jazaeri Christian Enz

Integrated Circuits Laboratory (ICLAB), Ecole Polytechnique Fédérale de Lausanne (EPFL)

MOS AK

Outline

● Harsh Environments ● Radiation Effects on Electronics

● Physics-based modeling and characterization ●  Ionizing and Non-ionizing Radiations ● Radiation Environment Close to Earth ● Radiation Effects on MOSFETs

● Low Temperature (Cryogenic) Electronics ● Physics-based modeling and characterization ● Compact models

Farzan Jazaeri | 2018

Extreme Harsh Environments [1]

Radiativestresses•  CosmicraysandVanAllenbeltsTemperatureMechanicalstresses•  Vibration,Shock,andpressureChemical•  Saltwater,Moisture,Noxiousgases

CMS event ATLAS event

Colliding Galaxies

Supernova Active Galactic


Khanna,VinodKumar,“Operatingelectronicsbeyondconventionallimits,”IOPPublishing,2017.

Images:NASA

Earth Orbiter Venus

Europa Mars Rover

Lifetime: min/hrs (on surface)

TID ~7 Mrad

– 145 º C

Lifetime: ~1 hr (on surface)

+470 º C TID ~7 krad

TID

0.1 - 0.3 krad

LEO: 1 - 3 yrs (500 - 1500 cycles)

GEO: 10 - 15 yrs (3500 - 5500 cycles)

10 - 15 krad

0 º C 50 º C

5 krad /yr

Lifetime: 90 days

– 125 º C +25 º C

Earth Orbiter Venus

Europa º





TID

0.1 - 0.3 krad

LEO: 1 - 3 yrs (500 - 1500 cycles)

GEO: 10 - 15 yrs (3500 - 5500 cycles)

10 - 15 krad

0 º C 50 º C

5 krad /yr

Lifetime: 90 days

– 125 º C +25 º C


(Images:NASA)

Extreme Harsh Environments [2]

Outline

● Harsh Environment ● Radiation Effects on Electronics




Non-ionizing and Ionizing Radiations

Non-ionizingiselectromagneticradiationthatdoesnotcarryenoughenergyperquantum(photonenergy)toionizeatomsormolecules.Ionizingradiationisradiationthatcarriesenoughenergytoliberateelectronsfromatomsormoleculesmadeupofenergeticsubatomicparticles,ionsoratomsmovingathighspeeds,andelectromagneticwaves.


RadiationEffects:•  TotalIonizingDose(TID)

•  longtermfailure•  timedependent,

•  SingleEventEffects(SEE)•  aninstantaneousfailure,•  describedbyameantime,•  Softandharderrors

•  Canpartiallymitigatewithshielding

Radiation Effects on MOSFETs

Image for ATLAS from CERN: Higherleveloftotal ionizingdose(1Gradfortheinnermostcomponents)

1𝐺𝑟𝑎𝑑=1𝑒7𝐺𝑦=1𝑒7𝐽/𝑘𝑔 


- - - - - - - - -

G

Source Drain

Gate Drain Source

Substrate (p-type)

STI

Total Ionizing radiation effects on MOSFETs

IDleak.parIDleak.main

IDleak.par

SG

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Gate Voltage

•  Mobility Degradation •  Subthreshold Swing Degradation •  Shift in threshold Voltage •  Leakage Current

EffectsofQotandQitinalloxides


Farzan Jazaeri et al., ”Charge-Based Modeling of Radiation Damage in Symmetric Double-Gate MOSFETs,” IEEE Journal of the Electron Devices Society, 2018

- - - - - - - - -

G

Source Drain

Gate Drain Source

Substrate (p-type)

STI

+ + + + + + + + + + + + + + + +

+ +

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+ + + + + + +

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Gate Voltage





IDleak.par

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- - - - - - - - -

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Source Drain

Gate Drain Source

+ +

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+ + + + + + +

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Substrate (p-type)

STI

+ + + + + + + + + + + + + + + + + + + + + + +

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Ionizing radiation effects on 28nm MOSFETs

C.-M. Zhang Farzan Jazaeri et al., "Characterization of GigaRad Total Ionizing Dose and Annealing Effects on 28-nm Bulk MOSFETs," IEEE TNS, 2017.


C.-M. Zhang, Farzan Jazaeri et al., "Impact of GigaRad Ionizing Dose on 28 nm Bulk MOSFETs for Future HL-LHC," in 2016 46th European Solid-State Device Research Conference (ESSDERC), 2016.

VGS=0 V Test chip under probes Bias for irra.: Vgs=Vds=1.2V

Ionizing radiation effects on 28nm MOSFETs



Ionizing radiation effects on FinFETs


Analyticalmodel(lines)andTCADsimulations(markers)

Ionizing radiation effects on FinFETs


Uniformdistributionofinterfacetrapdensity(lines)andTCADsimulations(markers)


Outline

● Harsh Environments ● Radiation Effects on Electronics




Introduction

●  Cryo-characterization ●  Physics-based Cryo-MOS model ●  Compact models (EKV, BSIM6, UTSOI)

●  Quantify cryogenic impact on circuit design Figures-of-Merit

Cryogenic MOS transistor models are essential to assess speed-power-noise trade-offs during design of cryogenic qubit control circuits.

Cryo?


28 nm Bulk CMOS Characterization

Type W/L T[K]

nMOS 3μm/1μm 4.2,300

pMOS 3μm/1μm 4.2,77,300

nMOS 1μm/90nm 4.2,77,300

nMOS 3μm/28nm 4.2,300

nMOS 300nm/28nm 4.2,77,300

Measured devices (28 nm Bulk CMOS Process) Sample chip

Measured devices and Sample chip


Arnout Beckers, Farzan Jazaeri, Christian Enz, “Cryogenic Characterization of 28 nm Bulk CMOS Technology for Quantum Computing,” ESSDERC2017.

28 nm Bulk CMOS Characterization

Transfer characteristics


Arnout Beckers, Farzan Jazaeri, Christian Enz, “Cryogenic Characterization of 28 nm Bulk CMOS Technology for Quantum Computing,” ESSDERC2017.

Parameter Extraction: Subthreshold Swing

𝑆𝑆 (𝑚𝑉/𝑑𝑒𝑐)= 𝐾𝑇/𝑞 ×ln(10)×nn=(1+ 𝐶↓𝑑 /𝐶↓𝑜𝑥   )



Subthreshold swing

o  ΔSSlong ~ 10 mV/dec at 4.2 K and 300 K

𝑆𝑆 (𝑚𝑉/𝑑𝑒𝑐)= 𝐾𝑇/𝑞 ×ln(10)×nn=(1+ 𝐶↓𝑑 /𝐶↓𝑜𝑥   )



Subthreshold swing

o  ΔSSlong ~ 10 mV/dec at 4.2 K and 300 K o  ΔSSshort ~ 30 mV/dec at 4.2 K and 300 K o  Short channel effects (~ 20 mV/dec) T-

independent


Cryogenic Physics-based Modeling

will affect the ●  Subthreshold swing ●  On-state current, leakage

current ●  Threshold voltage ●  Mobility

●  Incomplete ionization, 𝑁↓𝐴↑− (𝑇)

100 mK − 77 K

●  Decreased phonon scattering ●  Hot-carrier effects

●  Fermi–Dirac and Boltzmann statistics (𝑇) ●  Intrinsic carrier concentration 𝑛↓𝑖 (𝑇) ●  Band gap widening, 𝐸↓𝑔 (𝑇) ●  Velocity saturation, Δφms, Thermal voltage (𝑇)

Important phenomena

●  Quantum confinement

●  Dominant impurity / surface roughness scattering

●  Interface charge trapping, 𝐷↓𝑖𝑡 


A.Beckers,F.JazaeriandC.Enz,"CryogenicMOSTransistorModel,"inIEEETransactionsonElectronDevices,2018.FarzanJazaeriandJean-MichelSallese,“ModelingNanowireandDouble-GateJunctionlessField-EffectTransistors,”CambridgeUniversityPress,April2018.

Physics-based Modeling: Model Overview Interface charge traps Reduced phonon scattering

Mobility reduction f(VG)

Incomplete ionization

BCs: •  Continuity of dielectric displacement vectors •  Bulk charge neutrality

•  Mobile charge:

•  Current (linear regime):

•  Maxwell-Boltzmann validity??

𝜵↑𝟐 𝜳=− 𝝔/𝜺↓𝑺𝒊  


Physics-based Modeling

Model


Compact Modeling: BSIM6

BSIM6 Model Card Extraction at 4.2 K


Compact Modeling: Simplified EKV

1.  Long-channel model validated on 28-nm process at 4.2 K 2.  Simple expressions 3.  Few parameters 4.  capture physical effects 5.  Fitting parameters Arnout Beckers, et al, “Cryogenic Characterization of 28 nm Bulk CMOS

Technology for Quantum Computing,” ESSDERC2017.


Compact Modeling: Simplified EKV

Arnout Beckers, et al, “Cryogenic Characterization of 28 nm Bulk CMOS Technology for Quantum Computing,” ESSDERC2017.

1.  Short-channel model validated on 28-nm process at 4.2 K 2.  Simple expressions 3.  Few parameters 4.  capture physical effects 5.  Fitting parameters



Thankyouforyourattention!

References

1.  FarzanJazaeriandJean-MichelSallese,“ModelingNanowireandDouble-GateJunctionlessField-EffectTransistors,”CambridgeUniversityPress,April2018.

2.  A.Beckers,F.Jazaeri,etal."CharacterizationandModelingof28-nmFDSOICMOSTechnologydowntoCryogenicTemperatures,"Solidstateelectronics,2018.

3.  A. Beckers, F. Jazaeri and C. Enz, "CryogenicMOS TransistorModel," in IEEE Transactions onElectronDevices,2018.

4.  A. Beckers, F. Jazaeri, A. Ruffino, C. Bruschini, A. Baschirotto and C. Enz, "Cryogeniccharacterizationof28nmbulkCMOStechnologyforquantumcomputing,"201747thEuropeanSolid-StateDeviceResearchConference(ESSDERC),Leuven,2017,pp.62-65.

5.  A. Beckers, F. Jazaeri and C. Enz, "Characterization and Modeling of 28 nm Bulk CMOSTechnologydownto4.2K,"inIEEEJournaloftheElectronDevicesSociety.

6.  A.Beckers, F. Jazaeri,H. Bohuslavskyi, L.Hutin, S.De Franceschi andC. Enz, "Design-orientedmodelingof28nmFDSOICMOStechnologydownto4.2Kforquantumcomputing,"2018JointInternational EUROSOI Workshop and International Conference on Ultimate Integration onSilicon(EUROSOI-ULIS),Granada,2018,pp.1-4.

7.  F.Jazaeri,C.-M.Zhang,A.Pezzotta,andC.Enz,”Charge-BasedModelingofRadiationDamageinSymmetricDouble-GateMOSFETs,”IEEEJournaloftheElectronDevicesSociety,2018.

8.  C.-M. Zhang, F. Jazaeri, et al., ”CharacterizationofGigaRadTotal IonizingDose andAnnealingEffectson28-nmBulkMOSFETs,”IEEETransactionsonNuclearScience,2017.


References

1.  C.-M.Zhang,F.Jazaerietal.,”CharacterizationandModelingofGigaRad-TID-InducedDrainLeakageCurrentina28-nmBulkCMOSTechnology,”acceptedin2018IEEENuclearandSpaceRadiationEffectsConference(NSREC),2018.

2.  C.-M.Zhang,F.Jazaeri,etal.,”Totalionizingdoseeffectsonanalogperformanceof28nmbulkMOSFETs,”in201747thEuropeanSolid-StateDeviceResearchConference(ESSDERC),2017.

3.  C.-M.Zhang,F.Jazaeri,etal.,”GigaRadtotalionizingdoseandpost-irradiationeffectson28nmbulkMOSFETs,”in2016IEEENuclearScienceSymposium(NSS),2016.

4.  A.Pezzotta,C.-M.Zhang,F.Jazaeri,C.Bruschini,G.Borghello,F.Faccio,S.Mattiazzo,A.Baschirotto,C.Enz,”ImpactofGigaRadIonizingDoseon28nmbulkMOSFETsforfutureHL-LHC,”in201646thEuropeanSolid-StateDeviceResearchConference(ESSDERC),2016.

5.  Khanna,VinodKumar,“Operatingelectronicsbeyondconventionallimits,”IOPPublishing,2017.


High Temperature Electronics


Sourcesofionizingradiationininterplanetaryspace

Khanna,VinodKumar,“Operatingelectronicsbeyondconventionallimits,”IOPPublishing,2017. Image:NASA

SolarOrbiter

Impact on Analog Figures-of-Merit: Gm/ID

1.  Simple model of current efficiency at 4.2 K validated on a 28-nm process 2.  The 𝑮↓𝒎 ∕𝑰↓𝑫  -characteristic is the basis for additional analog metrics (noise, gain, linearity,

…), as well as transistor sizing and biasing.

22spec spec spec ox T TW kTI I I n C U UL q

µ= ⋅ = ⋅ ⋅ ⋅ =W Wwith and



Cryo?



Cryo?

28 nm, 4.2 K

BSIM6

BSIM6’s temperature scaling cannot catch SS at 4.2 K for 28 nm.

For long channel T-scaling works.


Radiation Environment Close to Earth

Phoenix Mars Lander

Solar Orbiter

VanAllenbelts:ParticlestrappedintheVanAllenbeltsi.e.energeticchargedparticles,mostofwhichoriginatefromthesolarwind(protons,electrons,andheavyions).Cosmicrays:Galacticcosmicrayparticlesandparticlesfromsolarevents(massejectionsandsolarflares).


ImagesCredit:NASA

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