research fueled by: freie universitaet berlin april 12 th, 2010 jairo sinova texas a&m...
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Research fueled by:
Freie Universitaet BerlinApril 12th, 2010
JAIRO SINOVATexas A&M University
Institute of Physics ASCR
New paradigms in spin-charge coupled physics in mutli-band systems
Hitachi CambridgeJoerg Wünderlich, A. Irvine, et al
Institute of Physics ASCRTomas Jungwirth, Vít Novák, et al
University of Würzburg Laurens Molenkamp, E. Hankiewiecz, et al
University of Nottingham Bryan Gallagher, Richard Campion, et al.
2Nanoelectronics, spintronics, and materials control by spin-orbit coupling
I. Introduction: using the dual personality of the electron•Electronics, ferromagnetism, and spintronics•Internal coupling of charge and spin: origin and present use
II. Control of material and transport properties through spin-orbit coupling:•Ferromagnetic semiconductors: magnetic anisotropy control•Anomalous Hall effect and spin-dependent Hall effects
• Spin injection Hall effect: a new paradigm in exploiting SO couplingSpin based FET: old and new paradigm in charge-spin transport
•Theory expectations and modeling•Experimental results•New experimental results, further checks, outlook
new paradigms in spin-charge coupled physics
new paradigms in spin-charge coupled physics
3Nanoelectronics, spintronics, and materials control by spin-orbit coupling
The electron: the key character with dual personalities
CHARGECHARGEEasy to manipulate: Coulomb interaction
SPIN 1/2SPIN 1/2Makes the electron antisocial: a fermion
quantum mechanics
E=p2/2mE→ iħ d/dtp→ -iħ d/dr
““Classical” external manipulation of charge & spinClassical” external manipulation of charge & spin
special relativity
E2/c2=p2+m2c2
(E=mc2 for p=0)
+ particles/antiparticles & spin
Dirac equation=
4Nanoelectronics, spintronics, and materials control by spin-orbit coupling
Using charge and spin in information technology
HIGH tunablity of electronic transportproperties the key to FET success in processing technology
substrate
semiconductor
insulatorS Dgate
Vg >0
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